ML 9125

CRYSTALLOGRAPHY AND CRYSTAL GROWTH

LTPC 3003

AIM: To introduce the knowledge on the growth of crystals and understand the crystalline solids. OBJECTIVE: To make the students to understand crystalline systems and expose with growing single crystals 1. CRYSTALLOGRAPHY 8 Symmetry elements, operations - translational symmetries - point groups - space groups - equivalent positions close packed structures - voids - important crystal structures Paulings rules - defects in crystals, polymorphism and twinning - polarizing microscope and uses. 2. CHARACTERISTIC X-RAYS 8 Generation of X-rays - laboratory sources X-ray absorption X-ray monochromators - X-ray detectors (principles only) - diffraction by X-rays - Braggs law - reciprocal lattice concept - Laue conditions Ewald and limiting spheres - atomic scattering factor - anomalous scattering - neutron and electron diffraction (qualitative only) 3. SINGLE CRYSTAL DIFFRACTION 7 Laue, rotation/oscillation methods - interpretation of diffraction patterns - cell parameter determination indexing systematic absences - space group determination (qualitative only). Powder diffraction: Debye-Scherrer method uses. 4. CRYSTAL GROWTH THEORY 10 Introduction to crystal growth - nucleation Gibbs-Thomson equation - kinetic theory of nucleation limitations of classical nucleation theory - homogeneous and heterogeneous nucleation different shapes of nuclei spherical, cap, cylindrical and orthorhombic Temkins model physical modeling of BCF theory. 5. CRYSTALGROWTHTECHNIQUES 12 Bridgman technique - Czochralski methods - Verneuil technique - zone melting gel growth solution growth methods low and high temperature solution growth methods vapour growth - epitaxial growth techniques. L:45 REFERENCES: 1. Buckley, H.E., Crystal growth, John Wiely and sons, New York,1981. 2. Elwell,D & Scheel, H.J., Crystal growth from high temperature solution, Academic Press, New York,1995. 3. Laudise, R.A. The growth of single crystals, Prentice Hall, Englewood,1970. 4. Ramasamy, P. & Santhanaraghavan. P. Crystal growth processes and methods, KRU Publications, 2000. 5. Azaroff, L.V. Elements of X-ray crystallography, McGraw-Hill,NY,1968.

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Tareen, J.A.K & Kutty, T.R.N, A basic course in crystallography, University Press, 2001.

Faulty of Science and Humanities (Approved in 3RD AC 22.11.2003)

ITEM NO.3.4 (2(9))

PH 769 (Old Code: CG007)

CHARACTERIZATION TECHNIQUES LTPC 3003 AIM: To enable the students to understand the importance of materials characterization To expose the students on Advanced Characterization Techniques OBJECTIVE: Through this course, the students would be exposed to Advanced Materials Characterization Techniques To understand the structural, optical,mechanical and defect characteristics of the materials. UNIT I (9) Absorption & Emission spectroscopy - Nature of electromagnetic radiation - Atomicenergy levels Molecular electronic energy levels - vibrational energy levels - Ramaneffect - X-ray energy levels. UNIT II (8) Infrared spectroscopy - Near IR - Mid IR - Far IR Region - Correlation of infrared spectrawith molecular structure - structural Analysis - Radiation sources - Detectors -Thermal Detectors - Photon Detectors Spectrophotometers - Fourier TransformsInterferometer - Sample handling. UNIT III (9) Raman spectroscopy - Theory - Resonance Raman Spectroscopy - Comparison of Ramanwith Infrared Spectroscopy - Diagnostic - Structural Analysis - Polarization measurements- Instrumentation Quantitative analysis. UNIT IV (10) X-ray methods - Production of X-rays and X-ray Spectroscopy - Instrumental units -Detectors for the measurements of radiation - Semiconductor detectors - Direct X-raymethods - Nuclear magnetic Resonance Spectroscopy - Basic principles - Quantitativeanalyses - Scanning Electron Microscopy Electron Spectroscopy for Chemical Analysis- Electron Probe Micro Analysis. UNIT V (9) Thermal analysis - Differential Thermal Analysis - Instrumentation Differential Scanning calorimetry Thermogravimetry - Instrumentation - Methodology of Differential Scanning Calorimetry & Thermo Gravimetric Analysis - Conductance method -Electrical conductivity - Measurement of electrical conductance - Measurement ofdielectric constant. Microhardness - Etching studies. TOTAL PERIODS = 45 REFERENCES: 1. X.F. Zong, Y.Y. Wang, J. Chen, Material and Process Characterization for VLSI, World Scientific, New Jersey, 1988 2. S.M. Sze, Semiconductor Devices, Physics and technology, John Wiley Publishers, New York, 2000 3. B.R. Pamplin, Progress in Crystal Growth Characterization, Pergamon Press Ltd., U.K 1982 4. Dieter.K. Schroder, Semiconductor Material and Device characterization, John Wiley & Sons Inc., New York , 1990

TE 9212 C

ADVANCED THERMODYNAMICS

L T P 3003

UNIT I

AVAILABILITY ANALYSIS AND THERMODYNAMIC PROPERTYRELATIONS 10

Reversible work - availability - irreversibility and second law efficiency for a closedsystem and steady state control volume. Availability analysis of simple cycles.Thermodynamic potentials. Maxwell relations. Generalized relations for changes inentropy - internal energy and enthalpy - generalized relations for Cp and CV ClausiusClayperon equation, Joule Thomson coefficient.Bridgeman tables for thermodynamic relations. UNIT II REAL GAS BEHAVIOUR AND MULTI COMPONENT SYSTEMS 10 Different equations of state fugacity compressibility - principle of correspondingStates - Use of generalized charts for enthalpy and entropy departure - fugacitycoefficient,Lee Kesler generalized three parameter tables. Fundamental propertyrelations for systems of variable composition.Partial molar properties.Real gas mixtures -Ideal solution of real gases and liquid - activity - equilibrium in multi phase systems -Gibbs phase rule for non reactive components. UNIT III CHEMICAL THERMODYNAMICS AND EQUILIBRIUM 10 Thermochemistry - First law analysis of reacting systems - Adiabatic flame temperature entropy change of reacting systems - Second law analysis of reacting systems Criterion for reaction equilibrium.Equilibrium constant for gaseous mixtures evaluation of equilibrium composition. UNIT IV STATISTICAL THERMODYNAMICS 8 Microstates and Macrostates - thermodynamic probability - degeneracy of energy levels- Maxwell Boltzman, Fermi Diarc and Bose Einstein statistics - microscopicinterpretation of heat and work, evaluation of entropy, partion function, calculation of theMacroscopic properties from partition functions. UNIT V IRREVERSIBLE THERMODYNAMICS 7 Conjugate fluxes and forces - entropy production Onsagers reciprocity relations -thermo electric phenomena, formulations. TOTAL (L 45 + T 15): 60 PERIODS TEXT BOOKS :

1.
2. 3.

Kenneth Wark Jt.m, Advanced Thermodynamics for Engineers, McGrew HillInc., 1995. Bejan, A., Advanced Engineering Thermodynamics, John Wiley and Cons, 1988. Holman, J.P., Thermodynamics, Fourth Edition, McGraw Hill Inc., 1988. Smith, J.M. and Van Ness., H.C., Introduction to Chemical EngineeringThermodynamics, Fourth Edition, McGraw Hill Inc., 1987. Sonntag, R.E., and Van Wylen, G, Introduction to Thermodynamics, Classicaland Statistical Themodynamics, Third Edition, John Wiley and Sons, 1991. Sears, F.W. and Salinger G.I., Thermodynamics, Kinetic Theory and StatisticalThermodynamics, Third Edition, Narosa Publishing House, New Delhi, 1993. DeHotf, R.T., Thermodynamics in Materials Science, McGraw Hill Inc., 1993. Rao, Y.V.C., Postulational and Statistical Thermodynamics, Allied PublisherLimited, New Delhi, 1999.

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