Documente Academic
Documente Profesional
Documente Cultură
Submitted to:
Shahed anwar
Lecturer Dept of CSE, University Of Dhaka
Submitted by:
Md. Abdul Kader
Roll: 18, Batch: 12
Topics:
1. Features of CMOS and Bipolar Technology device
with comparison.
2. TTL vs. CMOS technology.
3. Enhancement Mode Transistor Action.
4. Depletion Mode Transistor Action.
Feature of CMOS and BJT with comparison :-
5. CMOS has very high input impedance But BJT has not high input
impedance.
Fig: The performance of CMOS and Bipolar technology with respect to time.
7. CMOS is used for high voltage application where BJT is used for high
current application.
8. CMOS input impedance is very higher. So it will have less loading effect
whereas in BJT loading effect will occur.
9. MOSFET is high immunity towards radiation but BJT less immunity for
radiation.
13. CMOS is good switch in digital design but BJT is very high speed switching
device.
14. Significant Power is drawn when device are switching between state in
CMOS.
16. CMOS is useful for Integration but BJT take Space and not suitable to
integrate in single chip.
Feature of CMOS and TTL with comparison:
2. In TTL logical high is defined as a signal of about 2.4 to 5 and logical low is
defined as a signal above GND to .5 voltage But in CMOS logical high is 3.3
volt or above and logical low is GND or 0 volt .
5. The upcoming technology will be very much suitable / adjustable with the
CMOS technology.
In this mode two n-Type Material is separated by a p-Type material. There have
an insulated (silicon di-oxide) gate on the side of this material.
Operation:
It works in Positive voltage in the gate input. When gate input get positive
voltage current then it attracts the free electrons into the P-region. The free
electrons combine with the holes next to the SiO2. When all holes touching the sio2
are filled then free electrons begin to flow from source to drain. There will create
an n-Type channel near the SiO2 called n-type inversion layer.
The minimum gate-source voltage that create inversion layer is called threshold
voltage.
Depletion Mode Action:
In this mode one n-Type Material is pushed by a p-Type material for creating a
thin channel. There have an insulated (Silicon Di-oxide) gate on the side of this
material.
Operation:
When no voltage have in the gate input then there have a small current
from source to drain through the narrow channel.
When the gate voltage is negative enough then the channel will be very thin then
the current flow from source to drain is Zero. This called cut off.
The operation of Depletion mode is like a JFET when the gate-source voltage is
negative.