Documente Academic
Documente Profesional
Documente Cultură
NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into five groups, R, O, Y, P and L, according to its DC current gain. As complementary type the PNP transistor ST 2SA733 is recommended. On special request, these transistors can be manufactured in different pin configurations.
Absolute Maximum Ratings (Ta = 25) Symbol Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Range VCBO VCEO VEBO IC Ptot Tj TS Value 60 50 5 150 250 150 -55 to +150 Unit V V V mA mW
O O
C C
Dated : 22/07/2004
ST 2SC945
Characteristics at Tamb=25 OC Symbol DC Current Gain at VCE=6V, IC=1mA Current Gain Group R O Y P L Collector Base Breakdown Voltage at IC=100A Collector Emitter Breakdown Voltage at IC=10mA Emitter Base Breakdown Voltage at IE=10A Collector Cutoff Current at VCB=40V Emitter Cutoff Current at VEB=3V Collector Saturation Voltage at IC=100mA, IB=10mA Gain Bandwidth Product at VCE=6V, IC=10mA Output Capacitance at VCB=6V, f=1MHz Noise Figure at VCE=6V, IE=0.5mA at f=1KHz, RS=500 NF 4 dB COB 2.5 pF fT 300 MHz VCE(sat) 0.15 0.3 V IEBO 0.1 A ICBO 0.1 A V(BR)EBO 5 V V(BR)CEO 50 V V(BR)CBO 60 V hFE hFE hFE hFE hFE 40 70 120 200 350 80 140 240 400 700 Min. Typ. Max. Unit
Dated : 22/07/2004
ST 2SC945
Total power dissipation vs. ambient temperature 300
Free air
1000
P tot (mW)
100
10
25
50
75
100
125
150
20
40
60
80
160
Tamb ( C)
Tamb ( C)
100 80 60
Ic - mA
10 8 6
Ic - mA
0.3
40
0.2
4 2
20
I B =0.1mA
0 0
0.4
0.8
1.2
1.6
2.0
0 0
IB=0.5 A
10
20
30
40
50
VCE, V
VCE, V
h FE - I C
360 360
h FE - I C pulse d
VCE=6V pulsed
320 280
DC CURRENT GAIN DC CURRENT GAIN
240 VCE=6.0V 200 160 120 80 40 0 0.01 0.1 1 10 100 COLLECTOR CURRENT, mA 3.0V 2.0V 1.0V 0.5V
0.01
0.1
10
100
COLLECTOR CURRENT, mA
Dated : 22/07/2004
ST 2SC945
Collector current vs. base emitter voltage 100
VCE=6V pulsed
Normalized h-parameters
10
C
Hre
Ic - mA
25 C
-25 C
75
Ta=
Hoe
1
Hfe Hoe
Hfe
0.1
Hre Hie
0.01 0.2
0.3
0.4
0.5
0.6
VBE , V
0.7
0.8
0.9
0.1 0.1
1 Ic ,
10
mA
fT - I E
VBE(sat) , V VCE(sat) , V
VBE(sat)
IC/IB=10
1000
fT - MHz
VCE=10V
20 50 50 0.1
VCE(sat)
20
IC/IB=10
100
6V 2V 1V
100
-100
Cib(Ic=0)
Cib, Cob - pF
10 Cob(IE=0) 1
0.1 0.1
10
100
200
400
600
800
1000
VEB, VCB - V
DC current gain
Dated : 22/07/2004
ST 2SC945
Input impedance, voltage feedback ratio and output admittance vs. small signal current gain 50 40 30 20 10
hoe hre hie
2
hoe hre
hfe
hie
1
hfe hie
hre hoe
200
400
600
800
1000
10 VCE - V
20
30
Dated : 22/07/2004