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=
+
=
where
m c
E E V + =
max
and
m c
E E V =
min
Since
lsf usf m
E E E + = and
lsf usf
E E =
Then
( )
( )
min max
min max
4
1
2
2
1
2
V V
V V
E
E E
m
lsf usf
=
= = =
Where
usf
E - peak amplitude of the upper side frequency (volts)
lsf
E - peak amplitude of the lower side frequency (volts)
For a 100% modulation ,
c m
E E = and 0
min
= V V
Example:
For the AM waveform shown, determine
a. the peak amplitude of the upper and lower side frequencies
b. peak amplitude of the unmodulated carrier
c. peak change in the amplitude of the envelope
d. coefficient of modulation
e. percent modulation
Solution:
a. ( ) V E E
lsf usf
4 2 18
4
1
= = =
b. ( ) V E
c
10 2 18
2
1
= + =
c. ( ) V E
m
8 2 18
2
1
= =
d. 8 . 0
10
8
= = m
e. % 80 100 8 . 0 = = x M or % 80 100
2 18
2 18
=
+
= x M
AM Voltage Distribution
( ) ( ) t f E t v
c c c
2 sin =
where ( ) t v
c
time varying voltage waveform for the carrier
c
E peak carrier amplitude (volts)
c
f carrier frequency (hertz)
The instantaneous amplitude of the modulated wave is
( ) ( ) [ ] ( ) [ ] t f t f E E t v
c m m c am
2 sin 2 sin + =
Where
( ) [ ] t f E E
m m c
2 sin + amplitude of the modulated wave
Substitute
c
mE to
m
E
( ) ( ) [ ] ( ) [ ] t f t f mE E t v
c m c c am
2 sin 2 sin + =
Where
( ) [ ] t f mE E
m c c
2 sin + amplitude of the modulated wave
( ) ( ) [ ] ( ) [ ] t f E t f m t v
c c m am
2 sin 2 sin 1+ =
Where
( ) [ ] = + t f m
m
2 sin 1 constant + modulating signal
( ) [ ] t f E
c c
2 sin = unmodulated carrier
From ( ) ( ) [ ] ( ) [ ] t f E t f m t v
c c m am
2 sin 2 sin 1+ =
( ) ( ) ( ) [ ] ( ) [ ] t f t f mE t f E t v
c m c c c am
2 sin 2 sin 2 sin + =
Therefore
( ) ( ) ( ) [ ] ( ) [ ] t f f
mE
t f f
mE
t f E t v
m c
c
m c
c
c c am
+ + = 2 cos
2
2 cos
2
2 sin
Where
( ) t f E
c c
2 sin = carrier signal (volts)
( ) ( ) [ ] t f f mE
m c c
+ 2 cos 2 / = upper side frequency signal (volts)
( ) ( ) [ ] t f f mE
m c c
+ 2 cos 2 / =lower side frequency signal (volts)
For a 100% modulation , m = 1
( ) c
c c
c
E
E E
E V 2
2 2
max
= + + =
And
( )
V
E E
E V
c c
c
0
2 2
min
= =
AM Time Domain Analysis
Suppose
Carrier ( ) ( ) t E t v
c c
25 2 sin =
Modulating signal ( ) ( ) t E t v
m m
5 2 sin =
Modulated signal ( ) ( ) ( ) ( ) t
E
m t
E
m t E t v
c c
c am
20 2 cos
2
30 2 cos
2
5 2 sin + =
Where
( ) t E
c
25 2 sin carrier (volts)
( ) t
E
m
c
30 2 cos
2
|
\
|
upper side frequency (volts)
( ) t
E
m
c
20 2 cos
2
|
\
|
+ lower side frequency (volts)
AM Power Distribution
We know that
R
V
P
2
= and
R
V
power ave
rms
2
. =
Power of unmodulated carrier
( )
R
E
R
E
P
c c
c
2
707 . 0
2 2
= = where
c
P carrier power
c
E peak carrier voltage
R load resistance
R
E
m
P P
c
lsb usb
2
2
2
|
\
|
= = where
2
c
mE
peak voltage of the upper
And lower side frequency
4 2 4 8
2 2 2 2 2
c c c
lsb usb
P m
R
E m
R
E m
P P =
(
= = =
t
P total power
2 4 4
2 2 2
c
c
c c
c lsb usb c t
P m
P
P m P m
P P P P P + = + + = + + =
Where
2
2
c
P m
sideband
P
(
+ =
2
1
2
m
P P
c t
Most power is in the carrier
sideband c
P P 2 =
increase m so that power of sidebands will also increase
AM Current Calculation
2
1
2
2
2
2
2
m
I
I
R I
R I
P
P
c
t
c
t
c
t
+ = = = where
t
P total transmit power
c
P carrier power
t
I total transmit current
c
I carrier current
R antenna resistance
2
1
2
m
I
I
c
t
+ = and
2
1
2
m
I I
c t
+ =
Modulation by a Complex Information Signal
If modulating signal is composed of 2 frequencies ( ( )
11
m
f and ( )
2
m
f
( ) ( ) ( ) [ ] ( ) [ ]
( ) [ ] ( ) [ ] t f f t f f
t f f t f f t f t v
m c m c
m c m c c am
2 2
1 1
2 cos
2
1
2 cos
2
1
2 cos
2
1
2 cos
2
1
2 sin
+ +
+ + =
2 2
3
2
2
2
1
...
n t
m m m m m + + + + =
4
2
t c
lsbt usbt
m P
P P = = and for the whole sideband
2
2
t c
sbt
m P
P =
|
|
\
|
+ =
2
1
2
t
c t
m
P P
AM Modulating Circuits
3 Kinds:
1. Low level Transmitter modulation takes place before the output element of
the final stage of the transmitter
Modulation occurs prior to:
- collector of transistorized tx
- drain of the output of the FET in a FET tx
- plate of the output in Vacuum Tube
Advantage less modulating signal power is required to achieve a high
percentage of modulation
- known as emitter modulation because the carrier is applied to
the base and the modulating signal to the emitter
Voltage gain
( ) [ ] t f m A A
m q v
2 sin 1+ =
where
v
A - amplifier voltage gain with modulation (unitless)
q
A - amplifier quiescent (without modulation) voltage gain
(unitless)
( ) t f
m
2 sin goes from +1 to -1:
( ) m A A
q v
= 1 where m modulation coef.
At m = 1, 100% modulation
( ) q v
A A 2
max
= and 0
(min)
=
v
A
Electronic components present:
a. T1 isolation transformer
Output applied to emitter of Q1
b. Q1 act as amplifier class A transistor
c. C2 coupling capacitor
Removes modulating signal frequency from AM waveform
2. Medium Power AM Modulator
- Modulation takes place in the collector
- Also called a collector modulator
Electronic components present:
a. C
1
& L
1
tank circuit
b. C
3
bypass capacitor
o Prevents information from entering the dc power supply
c. C
bc
base to collector junction capacitance of Q1
o Q1 can oscillate because of this
d. C
N
neutralizing capacitor
o Neutralize the interelectrode capacitance feedback of
C
bc
e. C
4
RF bypass capacitor
o Isolate the dc power supply from radio frequencies
3. Simultaneous Base & Collector Modulation
- Can achieve symmetrical modulation, operate at maximum efficiency ,
develop a high output power and require as little modulating
signal drive power as possible
Linear Integrated Circuit AM Modulators
- Has excellent frequency stability, symmetrical modulation
characteristics, circuit miniaturization, fewer components,
temperature immunity, and simplicity of design and
troubleshooting
- An example: XR-2206 monolithic function generator which
has 4 functional blocks:
o Voltage-controlled oscillator (VCO)
Source of the frequency of the carrier, f
c
Hz
C R
f
c
1 1
1
=
o Analog amplifier and sineshaper
o Unity-gain buffer
o Set of current switches
Example:
For an XR-2206 LIC modulator with a power supply voltage V
+
= 12 Vdc, a modulating
signal amplitude V
m
= 2 V
p
, a modulating signal frequency f
m
= 4 kHz, a dc bias V
bias
=
+4 V dc, timing R
1
= 10 kohm, and timing capacitor C
1
= 0.001 F, determine
a. Carrier frequency
b. Upper and lower side frequencies
c. Sketch the output waveform
d. From the output waveform, determine the coefficient of modulation and
percent modulation
AM Transmitters
1. Low-level transmitters
Used for low-power, low-capacity systems, such as wireless
intercoms, remote-control units, pagers, and short-range walkie-
talkies.
- A preamplifier (class A linear voltage amplifier) is applied
before the modulating signal driver
- RF carrier oscillator usually crystal controlled oscillators
- Buffer amplifier low-gain, high-input impedance linear
amplifier that isolate the oscillator from the high-power
amplifiers and reduce the occurrence and magnitude of short-
term frequency variations
2. High-Level Transmitters
- A carrier power amplifier and modulating signal amplifiers are
applied before the AM modulator
Trapezoidal patterns
- Used for observing the modulation characteristics of AM transmitters such
as coefficient of modulation and modulation symmetry
- Uses the CRT of a standard oscilloscope where the modulating signal input
is applied to the horizontal input and the AM signal input is applied to the
vertical input with the internal horizontal sweep disabled
AM envelopes produced by Complex Nonsinusoidal signals
Quadrature Amplitude Modulation
- Form of AM where signals from two separate information
sources (i.e. two channels) modulate the same carrier frequency
at the same time without interfering with each others
Single Sideband Communications
- to solve wastage of power, carrier is suppressed since it does not contain
information anyway
For a double sideband suppressed carrier (DSB or DSSC)
can be generated by using a Balanced Modulator - produced the sum and difference
frequencies
saved power and can be used for the sidebands for stronger signal over long distances
both sidebands have the same information it contained, one can also be suppressed SSB
or SSSC
f
c
f
m
and f
c
+ f
m
4 benefits of SSB:
1. spectrum space is conserved, more signals to be transmitted, less interference between
signals
2. all power can be put into the sideband stronger signal
3. less noise on the signal the narrower the bandwidth, the lesser is the noise
4. experience less fading
sometimes reflected LSB and carrier
if it reached the antenna will cancel out
with the USB signal, thus fading occurs
if USB is only sent, less fading will occur
if no modulating signal is sent, no signals are present such as voice pause
in SSB, transmitter output is Peak Envelope Power (PEP)
R
V
P
2
= where R antenna characteristic impedance
V rms value
Can be used by
another signal
Carrier
USB
LSB
Ex. assume a voice signal has
V = 120 V so V
rms
value = 0.707(V/2) = 0.707(120/2) = 42.42
R = 50
( )
W
R
V
PEP
rms
36
50
42 . 42
2 2
= = = dc input power of the transmitter final amplifier stage
at the instant of the voice envelope peak
can also be solved by:
PEP=V
s
I
max
where V
s
amplifier supply voltage
I
max
current peak
Ex. a 300-V supply with a peak current of 0.6A has
PEP = 300(0.60) = 180W
Average power:
P
ave
= PEP/3 or P
ave
= PEP/4 during normal speech level
For a PEP = 180W, P
ave
= 180/3 = 60W or P
ave
= 180/4 = 45W
typically, SSB only handles average power
Usage:
DSB SSB
FM
TV broadcasting
Some types of PSK
Telephone systems
Two-way radio
marine applications
military applications
in TV, video broadcasting uses a partial suppression of carrier and suppressed sideband
f = 4.2 MHz used to save bandwidth
Vestigial sideband signal
vestigial sideband transmission of a TV picture signal
FREQUENCY CONVERSION
Mixer - converts frequency
- heterodyning function
Output frequencies: f
s
, f
0
, f
o
+f
s
, f
0
-f
s
or f
s
-f
0
f
0
f
s
f
0
f
0
+f
s
f
0
-f
s
osc
f
s
X
Tuned circuit
or filter
(to select
desired
frequency)