07 Clerc MOS-AK

Analytical modeling of nano MOSFETs in the quasi ballistic regime : beyond the drift diffusion approximation
R. Clerc, G. Ghibaudo
IMEP-LAHC Grenoble Institute of Technology France
P. Palestri, L. Selmi
DIEGM University of Udine Italy
1 MOS-AK Workshop 2010
Transport in Nano MOSFET (L < 20 nm) challenges Compact Modeling

Since the pioneering work of Natori (1994) and Lundstrom (1996), the quasi ballistic regime of transport in nano MOSFETs has been extensively investigated. However, existing compact model are still based on Drift Diffusion and saturation velocity concepts Sophisticated computer simulations using techniques such as full band Monte Carlo and full quantum transport approaches are being used to explore the physics of the ultimate MOSFET, but circuit models continue to be based on concepts and approaches developed in the 1960's.
M. Lundstrom, Int. SOI Conference, 2006
Let us examine the applicability of Quasi Ballistic theories to compact modeling
Outline
The orthodox Lundstrom theory Beyond Lundstroms theory Ballisticity extraction from experiments
The orthodox Lundstrom theory
Concept of Ballistic Limit

Energy Flux of carrier
Source
(In quasi equilibrium)
Gate
Drain
Transistor in diffusive regime
Scattering
I d ( y) = W Q i eff
d E Fn ( y) dy
Virtual Source Vd
Channel
L
Energy Flux of carrier
Source
Gate
Drain
Transistor in ballistic regime
Net current
I d BAL W Q i Vinj
Performance are no longer limited by transport along the channel, but by injection at the source end
Virtual Source Vd
Channel
L
Concept of Backscattering Coefficient

Using Mc Kelvey flux theory of Transport :
js+
Perfect non degenerated reservoir of carriers Source like thermalisation
(1 rs) js+ rs js+ (1 rd) jd-
rd jdjdx=L
thermalisation
Perfect non degenerated reservoir of carriers Drain like Distance
x=0
J. P. McKelvey, R. L. Longini and T. P. Brody, Alternative approach to the solution of added carrier transport problems in semiconductors , Phys. Rev., vol 123 pp. 51-57 (1961).
Assuming an Inversion Charge Qi at the virtual source controlled by the gate : (like in the Natoris model)
Id (1 r ) exp ( eVd / kT) (1 r) = Q i v th W (1 + r ) + exp ( eVd / kT) (1 r)
I d Sat 1 r = Q i v th W 1+ r I d Lin e Vd Q = (1 r ) i v th W 2 kT
A. Rahman and M. S. Lundstrom, A compact scattering model for the nanoscale double-gate MOSFET , IEEE. TED, vol. 49 p 481 - 489 (2002)
Concept of Backscattering Coefficient

rLF = Back Scattering Coefficient at Low Field (Ohmic Regime) assuming a constant isotropic mean free path :
rLF = L L+
(using Boltzmann or Fermi Statistics)
M. Lundstrom, Fundamentals of Carrier Transport , second edition, Cambridge university press, 2000
When L >>, this is consistent with the Drift Diffusion model :

I d Lin e Vd Q = (1 r ) i v th W 2 kT
L >>
I d Lin DD 1 = eff Qi Vd W L
if
2 eff kT v th e
M. Lundstrom IEEE EDL 22 p. 293 (2001)
rHF = Back Scattering Coefficient at High Field (Saturation Regime) Gate F+

kT
rHF =
LkT L
L kT L kT +
empirical
rLF = L L+
Source
F-
intuited as a generalization of rLF
M. Lundstrom Z. Ren, IEEE TED 49 p.133 (2002)
Drain
Backscattering Coefficient Modeling

In the MOSFET model, we have :
I d Sat 1 r = Q i v th W 1+ r
with
rHF =
L kT L kT +
Drain Current (A/m)
Id Sat 1000 Id Lin DD 100 Id Sat DD
When L >>, this is consistent with the Drift Diffusion model :

Id Sat BAL Id Lin BAL
(Vg VT ) 2 I d Sat DD 1 = eff C ox W L 2
if
Id Lin
2 eff kT v th e
(same expression than in ohmic regime)
10
and L kT = L
100 1000 10000
2 kT / e 2 kT / e =L Vd SAT Vg VT
1 1 10
Channel Length L (nm)
which is in fact equal to the LkT layer calculated from the Drift Diffusion potential profile !
= 200 cm2V-1s-1 Vinj = 1.2 105 m/s Ninv = 1.451013 cm-2
In ohmic regime, Quasi ballistic transport occurs when L In saturation, Quasi ballistic transport occurs when LkT i.e when L 10
M. S. Lundstrom and J. H. Rhew Journal of Computational Electronics, vol. 1 pp 481 - 489 (2002).
Validation by Monte Carlo Simulation

rHF = L kT L kT +
??
0 =
2 kT ev th
??
rHF extracted is in fact a function of LkT

20
extracted is in fact proportional to

L kT L kT + Dev
Extracted Dev (nm)
rMC =
0 =
2 kT ev th
DG 10 nm 10 Strained Bulk Bulk 0 0

= 0 2
DG 4 nm
IEDM 2006 Multi Subband Monte Carlo investigation of the mean free path and of the kT layer in degenerated quasi ballistic MOSFETs P. Palestri, R. Clerc, D. Esseni, L. Lucci, L. Selmi
100 200 300 400 MC low field mobility (cm2V-1s-1)
500
Application to device performance modeling Strain Silicon : double advantage in QB devices

Multi Subband Monte Carlo Simulations
Injection Velocity 107cm/s
D. Ponton et.al. Proc. Essderc 2006 p. 166
Analytical Model
2.5 2 1.5 1 0.5 0
Bulk
Ph. Acoustic Ph. Optical Surf. Roughness Tsi Fluctuation
DG 12
0.5
Back Scattering r
0.4 0.3 0.2 0.1 0
r= =
L kT L kT + 1 2 eff ( E eff ) kT/e 2 v th
Bulk DG 12 10 MOS-AK Workshop 2010
Limits of Lundstroms Model

rHF L kT = L kT +
is only an empirical formula : where does it come from ? How to evaluate LkT ? (V(x) is not known) (In particular the impact of velocity overshoot on V(x), and thus LkT is not self consistently taken into account)
2 kT/e v th
OK in low field But in high field rather equal to

= 2 kT/e v th
1 2
with
Vth and rHF are valid in non degenerated inversion layers How to generalize LkT and in degenerated inversion layer ? (An increase of Vinj may also degrade r : is subband engineering a viable strategy ?)
Beyond Lundstroms Model
R. Clerc, P. Palestri, L. Selmi On the Physical Understanding of the kT-Layer Concept in Quasi-Ballistic Regime of Transport in Nanoscale Devices IEEE TED 53, p 1634 1640 (2006)
1D flux conservation in the relaxation length approximation

1D Balance Equation in the phase space
vx A
F1 + F3 = F2 + C A B
F1 =
F2
f(x, v x ) v x dv x = + ( x )
f+(x,v)
F1
Collision Integral (relaxation length approximation ) :

x F3 x + x
f-(x,v)
C A B = x
F4 B
F5
f(x, v x ) f LE ( x, v x ) + (x) + (x) LE dv x = x /v x
Balance Equation for the flux of carrier along the device
+ + d e F ( x ) LE ( x ) = f(x,0 ) dx m
Assumption on the shape of f(x,vx) needed

The quasi ballistic Drift Diffusion

Distribution Function (a.u)
Assuming local Maxwellian distribution function (at each point) :

This work Drift Diffusion Approximation
m m v2 f ( x , v) = 2 n (x) exp ( ) 2 kT 2 kT
Similar to Drift Diffusion

-4 -2 0 2 4
velocity v/vth
BackScattering Coefficient r
L = 50
0.8
L L+
Application to the backscattering coefficient calculation:
0.6
L=/5
0.4 This model
L kT L kT +
r=
L kT (1 ) + L kT (1 )
= exp( L / LkT)
This equation includes both :

0.1 1
0.2 0.01
rLF =
Drain Voltage Vd (V)
L +L
rHF =
L kT + L kT
14
MOS-AK Workshop 2010
The quasi ballistic Drift Diffusion

We thus have now a new formalism which includes : Thermal velocity limitation at the source (Ballistic limit) Same backscattering coefficient in high and low field (Ballistic mobility) With no need to calculate LkT An alternative to Drift Diffusion ? Using this approach, if we derive the current flux :
= q (n + n ) v th = x v th
n = n+ + n
d n x v th 2n Fx dx kT / q dn n ' Fx dx '= 1 + Fx / v th
Using :
= (n + n ) v th = D'
Except for the boundary conditions, it is equivalent to Drift Diffusion, including saturation velocity !
Idem for H. Wang, G. Gildenblat, Scattering matrix based compact MOSFET model, in IEDM Tech. Dig., pp. 125128 (2002)
Non Thermal Approach

What is wrong with quasi ballistic Drift Diffusion ?
m m v2 f ( x , v) = 2 n (x) exp ( ) 2 kT 2 kT
A more suitable approximated distribution function (at each point) :

From MC simulations
2 U(x) m
Distribution Function (a.u.)
Backscattered Electron
Ballistic Electron
MB
Velocity 16 MOS-AK Workshop 2010
Backscattering formula :
r=
L kT A(L kT , L) 2 + L kT A (L kT , L)
L kT / L
A(L kT , L) =
U (u ) 2(u ) (1 + ) du 2 kT
1 Linear Pot.
1 Parabolic Pot.
Backscattering Coefficient r
2 th = 18 nm
Backscattering Coefficient r
2 th = 18 nm
0.1
2 th = 36 nm
2 th = 64 nm MC This model Thermal
0.1
2 th = 64 nm 2 th = 36 nm MC This model Thermal
0.01
kT layer length LkT (nm)
10
100
0.01 1
10
100
kT layer length LkT (nm) 17 MOS-AK Workshop 2010
Velocity profile in high field in a non self consistent linear potential profile With absorbing drain :
3 Linear Pot. 2.5 Symbols : MC Lines : Model V+
With real drain (emitting) :

Linear Pot. LkT = 2 nm 2 th = 36 nm V+ V Symbols : MC Lines : Model
Velocity (105 m/s)
2.5 2 1.5 1 0.5 0 0
Velocity (105 m/s)
LkT = 2 nm 2 th = 36 nm
2 1.5 1 0.5
V V
V vth V thermal 0 5 10 15 20
vth V thermal 2 4 6 8 10 12 14
Distance (nm)
Distance (nm)
Ballisticity extraction from experiments
Is there any experimental confirmation of the quasi ballistic nature of transport ? Not clear yet ! Let us show some results : let us consider only the ohmic regime (more simple : you do not need to know the charge at the virtual source) a standard low field mobility extraction has been performed on : 65 like nm Bulk and undoped Fully Depleted SOI technology featuring physical gate length down to 40 nm according quasi ballistic theory :
Id Lin e Vd 1 Q = (1 r) i v th = app Q iVd W 2 kT L
app = L dd L+
Apparent mobility should decrease with L in the quasi ballistic regime

20
MOS-AK Workshop 2010
Bulk nMOS
Low Field Mobility exp (cm2/Vs)
700 600 500 dd 400 300 exp 200 0.01 0.1 1 10
Undoped FD-SOI nMOS

Low Field Mobility exp (cm2/Vs)
200 180 160 140 120 100 80 0.01 0.1 1 10 dd exp
Channel length L (m)
Bulk 65nm CMOS technology doped channel (1017/cm3) with halos, SiON gate oxide (CET=2.2nm) polysilicon gate.
Undoped Fully depleted SOI Body thickness of 10 nm Metal gate TiN, 2.5 nm of HfSiON dielectric Raised source and drain

r = 1 app bal
The backscattering coefficient has been extracted using
Bulk nMOS
Backscattering coefficient r
1 0.9 0.8 0.7 0.6 0.01
rLF ~ 0.7
Undoped FD-SOI nMOS

Backscattering coefficient r
1
rLF ~ 0.85
0.95
0.9
Bulk nMOS
0.1 1 10
FD-SOI nMOS
0.85 0.01 0.1 1 10
Extracted value of r are very large Neutral defects ?

Conclusions
Conclusions
The Lundstrom backscattering theory provides a powerful guideline to analyse qualitatively device performance in the quasi ballistic regime However, It is not a compact model (How to compute LkT ?)
If you try to generalize this approach along the channel quasi ballistic drift diffusion which is similar to drift diffusion with saturation velocity in high field regime You need to account for the ballistic distribution of carriers However, experiments shows a more complex picture : we are not sure yet to operate in the quasi ballistic regime (neutral defects ?)
Thank you for your attention !
More Exact Quasi Ballistic Model

Drain Current (a.u)
Ballistic limit
Ballistic enhancement factor
Drift Diffusion Analytical Model (Velocity Saturation)
Mean Free Path

1 10 100
Drift Diffusion
1/L
1000
10000
Channel Length (nm) 26 MOS-AK Workshop 2010
Application to device performance enhancement Device Optimisation in the Quasi Ballistic Regime
3500
2 possible strategies to improve Ion :

3000
Ion Current (A/m)
Strained Undoped UTB Undoped UTB Bulk

DD vsat=105 m/s
2500 2000 1500 1000 500 0 1 10 100 1000 10000
improving , which mean improving = effective field mobility like in pure Drift Diffusion model ! improving Vinj (subband engineering) by DOS reduction Still no clear experimental evidence
Channel Length (nm)

BULK = 130 cm2V-1s-1 Vinj = 1.2 105 m/s Ninv = 1.451013 cm-2 Undoped UTB = 200 cm2V-1s-1 Vinj = 1.2 105 m/s Ninv = 1.451013 cm-2 Strained Undoped UTB = 370 cm2V-1s-1 Vinj = 1.3 105 m/s Ninv = 1.451013 cm-2
Re-investigation of the kT layer Concept

rHF L kT = L kT +
has been derived using Quasi Ballistic Drift Diffusion. key assumptions on which this formula is based : Boltzmann statistics in the contacts Non Self consistent potential use of the relaxation length approximation with a constant should be energy dependent (especially at high field) the population of backscattered carriers (f) has an equilibrium Maxwellian distribution : at each point x, regardless of the channel length and of the magnitude of the electric field reasonable approximation
Only close to the virtual source Or along the channel when many collisions are involved

07 Clerc MOS-AK

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Analytical modeling of nano MOSFETs in the quasi ballistic regime : beyond the drift diffusion approximation

1 MOS-AK Workshop 2010

Transport in Nano MOSFET (L < 20 nm) challenges Compact Modeling

Let us examine the applicability of Quasi Ballistic theories to compact modeling

2 MOS-AK Workshop 2010

3 MOS-AK Workshop 2010

The orthodox Lundstrom theory

4 MOS-AK Workshop 2010

Concept of Ballistic Limit

Transistor in diffusive regime

Energy Flux of carrier

Transistor in ballistic regime

5 MOS-AK Workshop 2010

Concept of Backscattering Coefficient

(1 rs) js+ rs js+ (1 rd) jd-

Perfect non degenerated reservoir of carriers Drain like Distance

6 MOS-AK Workshop 2010

Concept of Backscattering Coefficient

(using Boltzmann or Fermi Statistics)

When L >>, this is consistent with the Drift Diffusion model :

M. Lundstrom IEEE EDL 22 p. 293 (2001)

rHF = Back Scattering Coefficient at High Field (Saturation Regime) Gate F+

intuited as a generalization of rLF

M. Lundstrom Z. Ren, IEEE TED 49 p.133 (2002)

Backscattering Coefficient Modeling

Drain Current (A/m)

Id Sat 1000 Id Lin DD 100 Id Sat DD

When L >>, this is consistent with the Drift Diffusion model :

(Vg VT ) 2 I d Sat DD 1 = eff C ox W L 2

(same expression than in ohmic regime)

Channel Length L (nm)

= 200 cm2V-1s-1 Vinj = 1.2 105 m/s Ninv = 1.451013 cm-2

8 MOS-AK Workshop 2010

Validation by Monte Carlo Simulation

rHF extracted is in fact a function of LkT

extracted is in fact proportional to

Extracted Dev (nm)

DG 10 nm 10 Strained Bulk Bulk 0 0

100 200 300 400 MC low field mobility (cm2V-1s-1)

9 MOS-AK Workshop 2010

Application to device performance modeling Strain Silicon : double advantage in QB devices

0.4 0.3 0.2 0.1 0

L kT L kT + 1 2 eff ( E eff ) kT/e 2 v th

Bulk DG 12 10 MOS-AK Workshop 2010

Limits of Lundstroms Model

OK in low field But in high field rather equal to

Beyond Lundstroms Model

12 MOS-AK Workshop 2010

1D flux conservation in the relaxation length approximation

Collision Integral (relaxation length approximation ) :

f(x, v x ) f LE ( x, v x ) + (x) + (x) LE dv x = x /v x

Balance Equation for the flux of carrier along the device

Assumption on the shape of f(x,vx) needed

The quasi ballistic Drift Diffusion

Assuming local Maxwellian distribution function (at each point) :

Similar to Drift Diffusion

Application to the backscattering coefficient calculation:

0.4 This model

This equation includes both :

Drain Voltage Vd (V)

MOS-AK Workshop 2010

The quasi ballistic Drift Diffusion