Sharp Develops Basic Technology for

RRAM, Next-Generation Nonvolatile

Memory
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Sharp Corporation has developed basic technology for a novel high-speed
programming system for RRAM (Resistance Random Access Memory), a next-
generation nonvolatile memory capable of programming data at rates about 100
times faster than flash memory.
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Based on collaborative research with the National Institute of Advanced Industrial

Science and Technology, an independent administrative agency of the Japanese
government, these results are the first step toward the practical use of this memory
technology. Further R&D, including IC integration and microfabrication technologies,
will continue in the future aimed at bringing a commercially viable product to market.

RRAM is a memory device in which electrical resistance changes of a metal oxide

film are functioned as the stored information, and this device can be operated with
low voltages and at high speeds. There are high expectations for RRAM to be a next-
generation memory that will enable large amounts of data to be programmed into
memory at high speeds with low power consumption. However, it is not yet clear how
resistance changes work in the metal oxide film, the key component of RRAM, and
achieving a memory device that takes full advantage of the outstanding characteristics
of RRAM has proven difficult.
In collaborative research with the National Institute of Advanced Industrial Science
and Technology, Sharp has focused on resistor constituents other than the resistor
components where the information of the RRAM memory devices is stored. The
resistor constituents, which had not previously been controlled, were set to the
different values when data is programmed and erased.

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As a result, the company has achieved a High-Speed Unipolar Switching. Programming and erasing
RRAM had previously required a positive and a negative power source, but this Sharp development
makes these operations possible using a single power supply. The result is memory elements that
function using simple circuit architecture. Dramatically simplifying the cell structure of the RRAM,
which can program data at high-speeds and low power consumption, makes it possible to reduce the
cell size. This technology also uses materials that are highly compatible with conventional CMOS
processes, allowing existing production lines to be used.

Source: Sharp