CMOS inverter design Answer Q1: CMOS referred to as complementary metaloxidesemiconductor that form by NMOS and PMOS transistor.

The technology used in microprocessors, microcontrollers, static RAM, and other digital logic circuits and also for several analog circuits. Answer Q2: The basic operation of the CMOS is full rail-to-rail swing, symmetrical VTC, propagation delay function of load capacitance and resistance of transistors, no static power dissipation and direct path current during switching Answer Q3: 3 basic region operation are:

Cut-Off Region In this region the gate voltage is less than the pinch-off voltage Vp and therefore very little current flows. Triode Region In this mode the device is operating below pinch-off and is effectively a variable resistor. ROUT is ~ linear but only over a small range of VDS. Saturation Region This is the main operating region for the device. The drain voltage has to be greater than the gate voltage less the pinch-off voltage this sets the minimum supply voltage. The curves in the saturation region can be extrapolated to a point 1/, where is known as the Channel length modulation parameter, (units V-1), - this is analogous to the BJT Early voltage.

Answer Q4: The advantages of the CMOS are: High operating speeds and efficient usage of energy. They have very low static power supply drain most of the time. Only when the transistors are switching between the two states (on and off) do you find a significant level of power drain. High degree of noise immunity. Reliable Design, Reliable Performance, Best Price. Cost Optimized Design. Efficient Manufacturing Process. Microwave Performance from Advanced CMOS. Efficient Design. Answer Q5:In PMOS the carriers are holes whose mobility is less than the electrons, the carriers in NMOS. That means PMOS is slower than an NMOS. In CMOS technology, nmos helps in pulling down the output to ground ann PMOS helps in pulling up the output to Vdd. If the sizes of PMOS and NMOS are the same, then PMOS takes long time to charge up the output node. If we have a larger PMOS than there will be more carriers to charge the node quickly and overcome the slow nature of PMOS . Basically we do all this to get equal rise and fall times for the output node. In Transmission Gate, PMOS and NMOS aid each other rather competing with each other. That's the reason why we need not size them like in CMOS. In CMOS design we have NMOS and PMOS competing which is the reason we try to size them proportional to their mobility. Equation of mobility is:

Answer Q6:The voltage transfer characteristic (VTC) gives the response of the inverter circuit,Vout , to specific input voltages,Vin. It is a figure of merit for the static behavior of the inverter. So the gate-source voltage Vgs of the n-chanel MOSFET is equal to Vin. While the gate-source voltage of the p-channel MOSFET calculates as and the drain so voltage of the pMOSFET can be expressed as

Figure above showing output characteristics of both transistors up to Vdd = Vin = 5V. The resulting drain currents in the inverter circuit must be equal for each Vin.

From the figure above extraction of the voltage transfer characteristics of a CMOS inverter. The drain currents of both transistors must be equal. Therefore, the intersection of the output characteristics of both transistors for each input voltage Vin give the output voltage Vout . The circles mark five points of the voltage transfer characteristics.

Answer Q7: