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ELECTRONICS II

Single-Stage IC Amplifier

Introduction!
ELECTRONICS II

Single-Stage Integrated Circuit Amplifier

Introduction : We have studied configurations. discrete circuit discretecircuit amplifier

The next domain is integratedcircuit amplifiers.

There is a difference in IC design philosophy.

Circuits combine MOS and bipolar transistors in a technology known as BiMOS or BiCMOS. Chip-area considerations dictate that while resistors are to be avoided, constant current sources are readily available.

contd!
ELECTRONICS II

Integrated Circuit Design Philosophy

Large capacitors are components external to the IC chip but should be used cautiously to keep number of chip terminals small to avoid high cost. As of 2003, CMOS process technologies are capable of producing devices with a 0.1 m channel length. Advantages?
These require overdrive voltages of only 0.2 volts or so. q g y However, bipolar circuits can still provide much higher output currents. Due to reliability under severe environmental conditions, the bipolar circuits are preferred for applications in the automotive industry. p pp y

CMOS is the most popular technology for the implementation of digital systems due to :
Small size Ease of fabrication and Low power dissipation

Typical values of MOSFET parameters! ELECTRONICS II

Typical Values of BJT/MOSFET Parameters

To pack more transistors on a chip, the trend is to reduce the minimum allowable channel length. Magnitude of threshold voltage Vt has been decreasing with g g g decreasing length. Additionally VDD has been reduced from 5 volts to 1.8 volts for newer technologies to keep power dissipation as low as possible. p With submicron technologies, channel length modulation effect is very pronounced. As a result VA has been steadily decreasing which causes Early voltage VA = VAL to become very small so V short-channel MOSFETs exhibit low output resistance.
Because r0 = VA/ID

Two major MOSFET capacitances are Cgs and Cgd. We see that:
Shorter devices exhibit much higher operating speeds and wider amplifier bandwidths. EX fT f 0 25 m NMOS t EX: for 0.25 transistor can b as hi h as 10 GH i t be high GHz.

contd! ELECTRONICS II

Typical Values of BJT/MOSFET Parameters

Till date (2003) the major drawback of standard bipolar (2003), integrated circuit fabrication process has been the lack of pnp transistors of a quality equal to that of npn devices. is lower for pnp transistors
And pnp transistors have much larger forward transit time F . And transit time F determines the emitter base diffusion emitter-base capacitance Cde and hence the transistor speed of operation.

Comparison of important characteristics! ELECTRONICS II

Comparison of Important Characteristics MOSFET

Induce a channel vGS > vt where vt = 0.5 to 0 7 V 0 5 0.7 vDS > vGS vt i v characteristics iG = 0 Input resistance (CS) is infinite Transconductance
gm = id v gs

BJT
Forward-bias EBJ vBE >vBEon where vBEon = 0.5 V 05 Reverse-bias CBJ i v characteristics iB = iC/ Input resistance (CE) r = /gm Transconductance gm=Ic/VT
2 ID Vt

= kn

W VGS Vt L

) or

gm =

(V

GS

ID =

W 1 kn VGS Vt 2 L

) 1 + V V
2

DS A

where 1/VA = process-technology parameter

Low/High Frequency Models!

ELECTRONICS II

Low/High Frequency Models

ig = 0 vgs _ +
gmvgs

id +
ro v

+
r

vo
gmv ro

is
Cgd rx C

+
Vgs

Cgs

gmVgs

ro

gmV

ro

The frequency at which magnitude of hfe drops to unity is called unity-gain bandwidth wT. fT is called unity gain frequency or transition frequency unity-gain frequency. fT is 10 to 20 GHz for npn and 5 to 15 GHz for NMOS. The high-frequency response of IC amplifiers is limited by the transistor internal capacitances, mainly Cgs and Cgd in the MOSFET and C and C in the BJT. The IC Biasing & MOSFET Current Mirror/Source! ELECTRONICS II

Biasing Using a Current Source

Vcc Consider the following circuit: Rc 8k

The BJT can be biased using a constant current source I I. It has the advantage that the emitter RB current is independent of and RB. Thus RB can be made large, enabling an increase in the input resistance at the base without adversely affecting bias stability.

= 100

+
vO RL 5k

100 k
1 mA

- 10 V

Implementation of constant current source?

ELECTRONICS II

Biasing Using a Current Source : The Circuit

Q1 and Q2 are matched transistors. Assuming high , and small value of base current, the current through Iref will be: Iref = {VCC (- VEE) VBE} / R Iref

10

Vcc R
I

Since VBE is same so collector currents of Q1 and Q2 will be the same. So I = Iref = {VCC + VEE VBE} / R

Q1

+ _

Q2
VBE

- VEE This is known as a current mirror.

Implementation!

ELECTRONICS II

Biasing using a current source : implementation

Vcc Rc 8k

11

= 100
RB 100 k
1 mA

+ vO RL 5k _

- 10 V

Vcc Iref R

I V
Q2

Q1

+ _

VBE The IC Biasing & MOSFET Current Mirror/Source!

- VEE

ELECTRONICS II

The IC Biasing & MOSFET Current Mirror/Source

Biasing in IC design is based on the use of constantcurrent sources.

12

Now: Also:

I D1 =

1 kn 2

W VGS Vt L 1

VDD R IRef Io

I D1 = I ref =
Io = I D2 =

(V

DD

VGS R

)
( )
2

And: Then:

Io I ref

For identical transistors:

I o = I ref

Because the circuit replicates or mirrors the reference current, it is given the name of current mirror. A constant dc current (called reference current) is generated at one location and then replicated at various other locations through a process called current steering. Usually a precision resistor external to the chip is used for generating the reference current. MOS Current Steering Circuits! ELECTRONICS II

W L 2 = W L 1

1 W k n VGS Vt 2 L 2

ID1 Q1

D G +
VGS

D Q2 S

MOS Current Steering Circuits

The circuit:
R VDD VDD +

13
VSG5

IRef

I2
Current Sink

Q4

Q5

I5 I3 I4
Q3

Current Source

Q1

+
VGS1

Q2

- VSS

Q1 and R determine ref current Iref. Q1, Q2 & Q3 form a twoport current- mirror where:

W L I 2 = I ref 2 W L 1

and

W L 3 I 3 = I ref W L 1

For saturation region operation, the voltages at the drains of Q2 and Q3 are constrained as follows:

vD2, vD3 = - vSS + vGS1 - vtn

ELECTRONICS II

The CS Circuit With Active Load!

The CS Circuit with Active Load

vDD I The Th most b i IC MOS amplifier i t basic lifi is:-

14

vi

vo

The drain resistance RD has been replaced by a constant current source I. Because this current source load can be implemented using a PMOS transistor, it is called an active-load and the amplifier is said to be activeloaded. The small signal analysis of the amplifier is:g y p For the CS amplifier,
Ri = , Avo = - gmro and Ro = r0 + vgs _ gmvgs + _
ro

The Th magnitude of Avo i th maximum gain available it d f is the i i il bl from a CS amplifier and is called the intrinsic gain,
Ao = gmro

The active-loaded CE Circuit!

ELECTRONICS II

The Active-Loaded CE Circuit

The circuit is :e c cu t s
vCC I

15

vi

vo

To keep analysis simple, the bias network is not shown. The small signal analysis of the amplifier is:For the CE amplifier,
Ri = r Avo = - gmro and Ro = r0 vi v
+ _

gmv

ro v o

The magnitude of Avo is the maximum gain available from a CE amplifier and is called the intrinsic gain,
Ao = gmro

High-Frequency Response of the CS & CE Amplifier!

ELECTRONICS II

The MOSFET internal capacitances

16

There will be five capacitances in total namely: Cgs , Cgd ,Cgb , Csb, and Cdb C
It can be shown that : Cgs = Cgd =1/2 WLCox Cgs = 2/3 WLCox and Cgd = 0 (triode region) (saturation region)

Cgs = Cgd = 0 and Cgb = WLCox (cut off region) (cut-off Another small capacitance that should be added to Cgs and Cgd is the capacitance that results from the fact that the source and drain diffusions extend slightly under the gate oxide. If overlap length is denoted by Lov, the overlap capacitance Cov = WLovCox (typically Lov = 0.05 to 0.1 L) The junction capacitances are given by: j p g y

Csb =

Csbo VSB 1+ Vo

and d

Cdb =

Cdbo V 1 + DB Vo

Where Csbo = value of Csb at zero-body source bias, VSB is equal to magnitude of reverse bias voltage. Vo is equal to junction built in voltage of 0.6 to 0.8 volts. contd.

ELECTRONICS II

The MOSFET internal capacitances contd

So the high frequency response of the MOSFET amplifier can be predicted by g q y p p p y the model:

17

G + Vgs Cgs

Cgd

gmVgs

ro

_
_ S

gmbVbs Csb B

Cdb

vbs +

Due to its complexity, such models are limited to computer simulation. contd. contd

ELECTRONICS II

The MOSFET internal capacitances contd

(Source and body connected)
G Vgs Cgd
Cgs

18

D ro Cdb

gmVgs

gmbVbs
Csb

_
S B

G + Vgs Cgs

Cgd

D gmVgs

ro

Cdb

_ S
ELECTRONICS II

The MOSFET internal capacitances contd

(Source and body connected: with Cdb neglected)

19

G + Vgs Cgs

Cgd

D gmVgs

ro

_ S
This is the commonly used high frequency model of the MOSFET.

ELECTRONICS II

20

The MOSFET internal capacitances contd

Vo/vin (dB)
LF band

Mid band

HF band

Gain falls due to CC!, CC2,CS

Gain falls due to Cgs, Cgd

fL

fH

f (Hz)

ELECTRONICS II

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We cannot direct the wind. but we can adjust the sails.

(Anonymous)

ELECTRONICS II

Common-Source Amplifier : High Frequency Response

The i Th circuit i it is:
+ VDD

22

RD Rsig

CC1
RG

D G S I

CC2

vsig

CS

RL

- VSS The MOSFET is replaced by its highfrequency model to determine the gain or the transfer function at fH. At these frequencies (high) CC1, CC2, and CS will be behaving as perfect short circuits. ..contd.
ELECTRONICS II

3 dB

fL

fH

Common-Source Amplifier : High Frequency Responsecontd

So the circuit becomes:
Rsig

23

G
RG

Cgd gmvgs Cgs

D
ro RD RL

vsig

+ vgs _

vo

S
R/L

To deal with the bridging capacitor Cgd consider the following circuit:
Rsig=RG // Rsig

Cgd
Igd

IL
gmvgs

Vsig{ RG/(RG + Rsig) }

+ vgs _
Thevenins

vo
R/L

Cgs

ELECTRONICS II

Common-Source Amplifier : High Frequency Responsecontd

So KCL at o/p node is: Igd = gmVgs + IL g g Or IL = Igd - gmVgs At and near fH Igd << gmVgs So IL = - gmVgs And vO = - gmVgs RL
Vsig= RG/(RG + Rsig) RG // Rsig

24

G + vgs _

Cgd
igd

IL
gmvgs

vo
R/L

Cgs

Because I = sCV So Igd = sCgd (vgs - vo ) Or Igd = sCgd (vgs - (- gmVgs RL) And Igd = sCgd (1 + gmRL) Vgs Now consider:
X

RG // Rsig

G + vgs _

Cgd
igd

IL
gmvgs

igd

G vo
R/L

IL
gmvgs

+ vgs _
Cgs Ceq

vo
R/L

Vsig= RG/(RG + Rsig)

Cgs

S
ELECTRONICS II

Common-Source Amplifier : High Frequency Responsecontd

Now Igd = sCgd (1 + gmRL) Vgs = sCeqVgs Which means Ceq = Cgd (1 + gmRL) So output voltage across Cgs :
And :

25

v gs = (
Hence:

RG vsig )TF RG + Rsig

TF

vo 1 = = vi 1 + s wo

where wo=1/CinRSig 3 dB or corner freq

v gs = (

RG vsig RG + Rsig

1 1 + s wo
igd

Here Cin = Cgs+ Ceq =Cgs+Cgd (1 + gmRL) And RSi = RSi // RG R Sig Sig

G + vgs _
Cgs Ceq

IL
gmvgs

vo
R/L

contd! ELECTRONICS II

Common-Source Amplifier : High Frequency Responsecontd

Hence with:

26

v gs = (

RG vsig RG + Rsig
)
1 1 +

We know vO= - gmvgs RL or vgs = - vO/ gmRL

1 1 + s wo

So vgs = - vO/ gmRL

RG v sig R G + R sig

s w

So hi-freq gain of CS amplifier:

vo RG = ( vsig RG + Rsig
Or:

) g m R'L

vo AM = vsig 1 + s i wH

1 1 + s wo
RG RG + Rsig

where:

AM = (

) g m R'L

And:

1 fH = 2C R' in sig

Notice that in the expression for Ceq = Cgd (1 + gmRL), the factor (1 + gmRL) is known as p p y( Miller multiplier and multiplication of Cgd by (1 + gmRL) is known as Miller effect. Example! ELECTRONICS II

Example : High Frequency Response

27

The circuit is:

+ VDD

Find AM, fH of the CS amplifier.

RD = 15 k ohms

Rsig = 100 K ohm

CC1

D G S I

CC2

Cgs = 1 pF Cgd = 0.4 pF gm = 1 mA/V ro = 150 k

vsig

RG = 4.7 M ohms

CS

RL = 15 k ohms

- VSS

Solution:

AM = (

RG RG + Rsig

) g m R'L

RL =ro // RD // RL = 150 //15 //15 = 7.14 k ohms So Am = -7 V/V

gm RL =1 X 7.14 = 7.14 V/V Now Ceq =(1 + gm RL ) Cgd = 3.26 pF And Cin = Cgs + Ceq = 1 + 3.26 = 4.26 pF

Finally fH = 1/2Cin (Rsig // RG ) = 382 k Hz. QED? ELECTRONICS II

Active-Loaded Common Source : High Frequency Response

High-frequency equivalent-circuit model of CS amplifier is:
Rsig

28

Cgd

vo
gmvgs ro RL CL

vsig

+ vgs _

Cgs

R/L And when Rsig is relatively large and CL is relatively small,

igd

IL vo
gmvgs R/L where Ceq =(1 + gm RL ) Cgd R

+ vgs _
Cgs Ceq

AM = g m R ' L

1 fH = 2C R in sig
ELECTRONICS II

QED!

The CG Amplifier With Active Load

Consider the following circuit: Body transconductance gmb = gm where = 0.1 to 0.2 Note vbs gives rise to a drain current signal gmb vbs And since both gate and body are grounded, the two voltages are equal. For analysis, consider the following circuit: io vo
vsig + VDD

29

vo

vgs
RS

vbs + vi _

ro

ii
vsig RS

i + vi _

RL

i=(gm+gmb) vi

Because ro connects output to input node so Rin depends on RL and Rout on Rs.

contd!
ELECTRONICS II

The CG Amplifier With Active Loadcontd

Now vo = ii RL At source node ii =(gm+gmb) vi + iro Now io = ii i ii
vsig RS

30

So

vi ii RL ii = ( g m + g mb )vi + ro

vi vo vi ii RL iro = = ro ro

iro
ro
RL

vo

i + vi _

Or

ii ro + ii RL = [( g m + g mb )ro + 1]vi
ii

i=(gm+gmb) vi

And

[1 + ( g m + g mb )ro ]vi =
ro + RL vi ro + RL Rin = = ii [1 + ( g m + g mb )ro ]
ELECTRONICS II

Finally

contd!

The CG Amplifier With Active Loadcontd

For voltage gain: vo = ioRL = iiRL and vi = ii Rin So Av = vo/vin = RL/Rin For Avo? iro + vi = vo
(because RL = so i flows from top to bottom)

31 io = ii i iro
ro
RL

vo

And i = (gm +gmb)vi So vo = (gm +gmb)viro+ vi Or Avo = 1+(gm +gmb)ro (g g ) Now

vsig

ii
RS

i + vi _

i=(gm+gmb) vi

v ro + RL Rin = i = ii [1 + ( g m + g mb )ro ]
Therefore

ro + RL Rin = Avo

Hence

RL RL Av = = Avo Riin ro + RL
ELECTRONICS II

contd!

32

The important thing about a problem is not its solution but the strength we gain in finding the solution.
(Anonymous)

ELECTRONICS II

The CG Amplifier With Active Loadcontd

To determine output resistance: There are two output resistances:So Ro = ro Ro when vi = 0 and Rout when vsig = 0.

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For Rout

v x = [ix + ( g m + g mb )v ]ro + v
ix
vx

Also v = ix Rs And

ro

Rout = ro + [1 + ( g m + g mb )ro ]Rs

Finally

ix
RS

+
V=ixRS

Rout = ro + Avo Rs
CB Amplifier with active-load!
ELECTRONICS II

34

The CB Amplifier With Active Load

Similar treatment as CG but with finite . Additionally, the base conducts signal current contrary to the behaviour of a MOSFET CG g y amplifier.

Emitter degeneration resistance!

ELECTRONICS II

The CE Amplifier With Emitter Degeneration Resistance

Emitter degeneration is more useful in CE amplifier than source degeneration in the CS amplifier. lifi Because emitter degeneration increases the input resistance of the CE amplifier. Incidentally the input resistance of CS is practically infinite to begin with. i

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The circuit: vCC I

i - (Vi ire ) /Re - i

vo
i ro RL

vi
Re

vo

i/( +1)

vi
i (Vi ire )
Rin

i - (Vi ire ) /Re Re (Vi ire )/ Re

Re is usually in the range of 1 to 5 times re. The analysis? vo = (Vi ire ) ro {i - (Vi ire ) /Re}

contd!
ELECTRONICS II

The CE Amplifier With Emitter Degeneration Resistancecontd

So vo = (Vi ire ) ro {i - (Vi ire )/ Re} and vo = [ i - (Vi ire ) /Re i ]RL And solving these two equations simultaneously gives us Rin = Vi /[i/( + 1)]

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Or:

RL +1 R in = ( + 1)re + ( + 1)R e ro + R L + R e ro +
1 R in = ( + 1)re + ( + 1)R e R 1+ L ro

Can be simplified to:

Hence inclusion of Re :

Reduces effective transconductance by a factor (1 + gm RL) Increases its output resistance by the same factor Increases input resistance depending on the value of RL RL. Increases amplifier bandwidth and finally the emitter degeneration resistance Re increases the linearity of the amplifier.

The CS Amplifier!
ELECTRONICS II

The CS Amplifier With Source Degeneration Resistance

37

The source degeneration introduces negative feedback. Broadens the bandwidth. More control over the amplifier.

resistance

The Emitter Follower!

ELECTRONICS II

The Emitter Follower

The commoncollector is also called emitter-follower because the voltage at the emitter follows very closely the voltage at the input. The emitter-follower suitable for IC fabrication is: Low frequency gain, input resistance and output resistance is identical to capacitively coupled version studied earlier. The high-frequency circuit is:
Rsig vsig

38

vCC

vo
I ro
RL

Rsig

rx

B/

+
vsig

v _
r

gmv
C

+
RL

vo

Simplified circuit!
ELECTRONICS II

The Emitter Followercontd

Rsig B

39
C

rx

B/

+
vsig

v _
r

gmv
C

ro

+ The simplified circuit is:

RL

vo

R/sig

+
vsig C

v _ r

gmv
C

+
RL/

vo

_ Here R/sig = ? and R/L = ? g

contd!
ELECTRONICS II

The Emitter Followercontd

The simplified circuit is: p
vsig R/sig

40

+ The resistance seen by C is :

C

v _ r

gmv
C

R = R

sig

// r + ( + 1)R

+
RL/

vo

And resistance seen by C is:

R
The high-frequency is:

R / sig + R / L = R / sig R /L 1+ + r re
1

fH =
Home Assignment!

2 (C R + C R )

ELECTRONICS II

41

The Emitter Follower

Home Assignment g Ex : 6.35 (pp 641)

Some useful transistor pairings!

ELECTRONICS II

Some Useful Transistor Pairings

Sometimes the transistor pairings are done in such a way that the superior performance is achieved through maximizing the advantages and minimizing the shortcomings of each of the two individual configurations. In such cases the transistor pair is considered as a compound device and the p p resulting amplifier is considered as a single stage. The Darlington Configuration: C

42

= 1 2

contd!
ELECTRONICS II

Example : Transistor Pairings

Determine the value of Rin if 1=2=100 RE=1 k Rsig=100 k and IE2=5 mA =100, k, mA.
VCC Solution: Rin = (1 + 1) {re1 + (2 + 1) (re2 + RE)} ????
Rsig

43

Q1 1ie
ii vi
1

vsig

Q2

vo
2ie
2

re1

Rin

RE

ie1

-VEE

re2

ie2

Rin

RE

Final remark: Ri (when load is infinite), Ro (when vi is 0), Avo, Ais pertain to amplifier proper.

Summary!
ELECTRONICS II

Single-stage IC Amplifiers : Summary

IC technology offers the circuit designers a very large number of inexpensive small-area MOS transistors. For minimization of chip area, large-valued resistors and capacitors are virtually absent. y Biasing in integrated circuits utilizes current sources.
An accurate and stable reference current is generated and then replicated to provide bias currents for various amplifier stages. The heart of the current-steering circuitry utilized to perform this function is the current-mirror.

44

The high-frequency response of IC amplifiers is limited by the transistor internal capacitances, mainly Cgs and Cgd i th MOSFET and C and C i th i t l it i l d in the d d in the BJT. IC amplifiers employ constant-current sources in place of the resistances RD(RC) that connects the drain (collector) to the power supply Reason? supply.
These active loads enable the realization of reasonably large voltage gains while using low voltages supplies (as low as 1 V)

contd

ELECTRONICS II

contd The largest voltage gain available from a CS or a CE amplifier is equal to the intrinsic gain of the transistor: Ao = gmro
for a BJT, it is 2000 to 4000 V/V. for a MOSFET, it is 20 to 100 V/V.
CE amplifier has low input resistance and CS amplifier has an infinite input resistance

45

Including a small resistance in the source (emitter) of a CS(CE) amplifier provides th d i lifi id the designer with a t l t effect ith tool to ff t some performance improvements e.g. wider bandwidth in return for gain reduction (a trade-off characteristic of negative feedback). Note some of the ICs dissipate as much as100 watts.
End of the part.
ELECTRONICS II

46

Choose a job you love, and you will not have to work a day in your life life.
(Confucius)

ELECTRONICS II