TIC206 SERIES SILICON TRIACS

Sensitive Gate Triacs 4 A RMS Glass Passivated Wafer 400 V to 700 V Off-State Voltage Max IGT of 5 mA (Quadrants 1 - 3)
MT1 MT2 G

TO-220 PACKAGE (TOP VIEW)

1 2 3

Pin 2 is in electrical contact with the mounting base.

MDC2ACA

absolute maximum ratings over operating case temperature (unless otherwise noted)
RATING TIC206D Repetitive peak off-state voltage (see Note 1) Full-cycle RMS on-state current at (or below) 85C case temperature (see Note 2) Peak on-state surge current full-sine-wave at (or below) 25C case temperature (see Note 3) Peak gate current Peak gate power dissipation at (or below) 85C case temperature (pulse width 200 s) Average gate power dissipation at (or below) 85C case temperature (see Note 4) Operating case temperature range Storage temperature range Lead temperature 1.6 mm from case for 10 seconds TIC206M TIC206S IT(RMS) ITSM IGM PGM PG(AV) TC Tstg TL VDRM SYMBOL VALUE 400 600 700 4 25 0.2 1.3 0.3 -40 to +110 -40 to +125 230 A A A W W C C C V UNIT

NOTES: 1. These values apply bidirectionally for any value of resistance between the gate and Main Terminal 1. 2. This value applies for 50-Hz full-sine-wave operation with resistive load. Above 85C derate linearly to 110C case temperature at the rate of 160 mA/C. 3. This value applies for one 50-Hz full-sine-wave when the device is operating at (or below) the rated value of on-state current. Surge may be repeated after the device has returned to original thermal equilibrium. During the surge, gate control may be lost. 4. This value applies for a maximum averaging time of 20 ms.

electrical characteristics at 25C case temperature (unless otherwise noted )

PARAMETER IDRM Repetitive peak off-state current Gate trigger current VD = rated VDRM Vsupply = +12 V IGT Vsupply = +12 V Vsupply = -12 V Vsupply = -12 V TEST CONDITIONS IG = 0 RL = 10 RL = 10 RL = 10 RL = 10 TC = 110C tp(g) > 20 s tp(g) > 20 s tp(g) > 20 s tp(g) > 20 s 0.9 -2.2 -1.8 2.4 MIN TYP MAX 1 5 -5 -5 10 mA UNIT mA

All voltages are with respect to Main Terminal 1.

DECEMBER 1971 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice.

NOITAMROFNI

TCUDORP

TIC206 SERIES SILICON TRIACS

electrical characteristics at 25C case temperature (unless otherwise noted) (continued)
PARAMETER Vsupply = +12 V VGT Gate trigger voltage On-state voltage Holding current Latching current Critical rate of rise of off-state voltage Critical rise of commutation voltage Vsupply = +12 V Vsupply = -12 V Vsupply = -12 V VT IH IL dv/dt dv/dt(c) IT = 4.2 A Vsupply = +12 V Vsupply = -12 V Vsupply = +12 V Vsupply = -12 V VDRM = Rated VDRM VDRM = Rated VDRM TEST CONDITIONS RL = 10 RL = 10 RL = 10 RL = 10 IG = 50 mA IG = 0 IG = 0 (see Note 6) IG = 0 ITRM = 4.2 A TC = 110C TC = 85C 1 20 3 tp(g) > 20 s tp(g) > 20 s tp(g) > 20 s tp(g) > 20 s (see Note 5) Init ITM = 100 mA Init ITM = -100 mA MIN TYP 0.7 -0.7 -0.7 0.7 1.4 1.5 -1.3 MAX 2 -2 -2 2 2.2 15 -15 30 -30 V mA mA V/s V/s V UNIT

All voltages are with respect to Main Terminal 1. NOTES: 5. This parameter must be measured using pulse techniques, t p = 1 ms, duty cycle 2 %. Voltage-sensing contacts separate from the current carrying contacts are located within 3.2 mm from the device body. 6. The triacs are triggered by a 15-V (open circuit amplitude) pulse supplied by a generator with the following characteristics: R G = 100 , tp(g) = 20 s, tr = 15 ns, f = 1 kHz.

thermal characteristics
PARAMETER RJC RJA Junction to case thermal resistance Junction to free air thermal resistance MIN TYP MAX 7.8 62.5 UNIT C/W C/W

DECEMBER 1971 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice.

NOITAMROFNI

TCUDORP

TIC206 SERIES SILICON TRIACS

TYPICAL CHARACTERISTICS

GATE TRIGGER CURRENT vs TEMPERATURE

100 Vsupply IGTM IGT - Gate Trigger Current - mA + + 10 + +
TC05AA

GATE TRIGGER VOLTAGE vs TEMPERATURE

10 Vsupply IGTM VGT - Gate Trigger Voltage - V + + + +
TC05AB

VAA = 12 V RL = 10 tw(g) = 20 s

VAA = 12 V RL = 10 tw(g) = 20 s

01 -60

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TC - Case Temperature - C

TC - Case Temperature - C

Figure 1. HOLDING CURRENT vs CASE TEMPERATURE

10 VAA = 12 V IL - Latching Current - mA IH - Holding Current - mA IG = 0 Initiating ITM = 100 mA
TC05AD

Figure 2. LATCHING CURRENT vs CASE TEMPERATURE

100 Vsupply IGTM + + 10 + +
TC05AE

VAA = 12 V

Vsupply + -

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TC - Case Temperature - C

TC - Case Temperature - C

Figure 3.

Figure 4.

DECEMBER 1971 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice.

NOITAMROFNI

TCUDORP