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Analytical modelling of steady-state temperature distribution

in thermal microsensors using Fourier method


Part 1. Theory
Alexander G. Kozlov
*
Institute of Sensor Microelectronics, Russian Academy of Sciences, Siberian Branch, Pr. Mira 55a, Omsk 644077, Russia
Received 4 December 2001; received in revised form 23 May 2002; accepted 27 June 2002
Abstract
An analytical method is presented that allows one to determine the steady-state temperature distribution in thermal microsensors based on
thermally isolated structures with arbitrary rectangular edges. The structure of thermal microsensors is treated as a 2Dstructure with a number
of rectangular regions which are classied into some types depending on the boundary conditions at their edges. For each type of the regions,
the equivalent parameters and heat exchange conditions are determined and the expression for temperature distribution in the region is
obtained by means of Fourier method. Heat ux densities between the regions are represented as sums of orthogonal functions with weighting
coefcients. The expressions for temperature distribution in the regions contain unknown weighting coefcients whose values are determined
from adjoint boundary conditions between all the adjacent regions. The system of equations for the weighting coefcients obtained with the
help of the adjoint boundary conditions is that of linear equations. As an example, a systemof linear equations for the weighting coefcients of
thermal microsensors based on the membrane thermally isolated structure is presented.
# 2002 Elsevier Science B.V. All rights reserved.
Keywords: Fourier method; Temperature distribution; Thermal microsensor; Thermally isolated structure
1. Introduction
Thermal microsensors are one class of microsensors [1].
There is a large variety of thermal microsensors:
(1) Direct thermal microsensors converting thermal mea-
surements like temperature or heat to electrical signals,
for example, thermistors, thermocouples, and thermo-
elements based on p-n junctions (diodes and transistors).
(2) Indirect thermal microsensors converting physical
quantities into thermal quantities first and then further
into electrical quantities, for example, thermal radia-
tion microsensors, thermal converters.
(3) Thermal microsensors using thermal actuation effects,
for example, thermal flow microsensors, thermal
pressure microsensors, thermal conductometric gas
microsensors, thermal accelerometer.
(4) Thermal microsensors operating at high temperatures,
for example, gas microsensors based on semiconductor
oxide thin-films and solid-state electrolyte thin-films.
(5) Thermal microsensors using several effects, for exam-
ple, pellistor-type catalytic gas microsensors which
operate at high temperatures and at the same time
convert the concentration of a combustible gas in
ambient air into a thermal quantity and then only into
an electrical quantity.
The main feature of all thermal microsensors is using a
very thin base layer or layers for arrangement of their
elements. These base layers called thermally isolated
structures are usually made with an anisotropic etching
of silicon. The thickness of the thermally isolated structure is
commensurable with the thickness of other layers of the
thermal microsensors and equal to some unit micrometers or
less. This feature of thermal microsensors leads to the
decrease of thermal losses and nally allows one to increase
their sensitivity and to decrease their power consumption.
However, the use of very thin base layers in thermal micro-
sensors complicates the design process of these microsen-
sors since, in this case, it is necessary to take into account the
parameters of all the layers. On other hand, the basic part in
the design process of the thermal microsensors is the mod-
elling of the temperature distribution in their structure. In
Sensors and Actuators A 101 (2002) 283298
*
Tel.: 7-3812-6486-76; fax: 7-3812-6486-76.
E-mail address: kozlov@phys.omsu.omskreg.ru (A.G. Kozlov).
0924-4247/02/$ see front matter # 2002 Elsevier Science B.V. All rights reserved.
PII: S0 9 2 4 - 4 2 4 7 ( 0 2 ) 0 0 2 0 9 - 1
this connection, it is important that the modelling of the
temperature distribution should be quick and correct.
Presently, for the modelling of the temperature dis-
tribution in thermal microsensors are used the following
methods:
(1) the analytical methods [28];
(2) the numerical methods [914].
Most of the analytical methods are based on the solution
of 1D heat conduction equations for the simple structures of
thermal microsensors [24,68]. In these methods, the
properties of all layers of the thermal microsensors are
taken into account by the average or equivalent values of
the corresponding parameters. These values are dened
through the parameters of each layer.
In [6], for the modelling of the temperature distribution in
thermally isolated structures is used the analytical method
that have been suggested in [15] for the thermal analysis of
multilayered parallelepiped structures. This method is based
on the Fourier method. In this method, the properties of all
layers of thermal microsensors are taken into account by
considering their structures as 3D structures and using
adjoint boundary conditions on the boundaries between
the layers. However, this analytical method can be applied
only to multilayered parallelepiped structures in which all
layers have identical dimensions (the length and the width)
and are placed on top of each other. If the thermal micro-
sensor have layers with different dimensions that are situated
in various regions of its thermally isolated structure, this
method can not be used. Furthermore, this method does not
allow one to take into account the convective and radiant
heat transfer and, when it is applied to the modelling of the
temperature distribution in the suspended structure, it is
necessary to determine the thermal impedance of the beams
that support this structure. In addition, the beams must be
narrowenough to be treated as 1Delements fromthe point of
view of the heat transfer.
Currently, the numerical methods (the nite-element
method [912], the boundary-element method [13], and
the nite-difference method [14]) are the most frequently
used to model the temperature distribution in the
thermal microsensors with arbitrary thermally isolated
structures. However, these methods are characterised
by the large amount of computations and the tedious
work of problem-dening. Furthermore, it is difcult
to use these methods in the further analytical proce-
dures, such as analytical determination of the thermal
microsensor parameters and analytical optimisation of its
structure.
The aim of this paper is to present an analytical method
of modelling the steady-state temperature distribution that
is based on the Fourier method and makes it possible to
determine the temperature distribution in 2D structures
like thermally isolated structures with arbitrary rectangular
edges.
2. Problem formulation
The thermal microsensors are usually made on thermally
isolated structures which are a thin base layer or layers and
supported by the silicon bulk substrate. The thermally
isolated structures are classied into the following types:
cantilevers, bridges, membranes, and suspended plates
(oating membranes suspended on thin and narrow beams).
The basic types of thermally isolated structures are shown in
Fig. 1. The thermal microsensors made on these thermally
isolated structures have the following features:
1. The thicknesses of all layers (base layers and element
layers) in the thermal microsensors are commensurable
and much smaller than the other dimensions of these
layers (their length and width), i.e. most of the thermal
microsensors can be considered as 2D structures.
2. The 2D thermally isolated structures on which the
elements of the thermal microsensors are situated are the
structures with arbitrary rectangular edges.
3. The elements of the thermal microsensors consist of the
layers, which are as well the structures with arbitrary
rectangular edges.
4. All the thermal microsensors have heat-generating
elements that are usually placed in the centre of the
membranes and the bridges, or on the tip of cantilevers.
The above-mentioned features of the thermal microsen-
sors allow to be proposed the following algorithm for the
analytical modelling of the temperature distribution in the
structure of these microsensors.
1. The 2D structure of a thermal microsensor is divided
into rectangular regions depending on the composition
of the layers and the heat-generating conditions. Each
region is replaced by an equivalent region with
homogeneous parameters.
2. For each region, are determined the heat exchange
conditions with the environment by means of a heat
transfer through gas medium and a radiant heat transfer,
and with the adjacent regions and the support bulk
silicon substrate by means of a thermal conduction.
3. For each region, a steady-state heat differential equation
is defined and then this equation is solved by Fourier
method. The solution of the equation is presented with
the help of eigenfunctions.
4. Parameters characterising thermal conduction processes
between all adjacent regions are determined using
adjoint boundary conditions.
Consider each step of the present algorithm separately.
3. Division of the thermal microsensors into
regions. Parameters of the regions
As mentioned in Section 2, the rst step of the present
modelling of the temperature distribution in a thermal
284 A.G. Kozlov / Sensors and Actuators A 101 (2002) 283298
microsensor is the division of its 2D structure into rectangular
regions. The necessity of a such division is due to the
possibility of the simplied writing of the analytical expres-
sion of the temperature distribution in each region through
eigenfunctions. In this connection, it is necessary (i) to
formulate requirements which have to be fullled for the
division of the 2D structure into rectangular regions, (ii) to
dene the substitution conditions of the rectangular regions
consisting of a few layers with various parameters by equiva-
lent regions with homogeneous parameters, and (iii) to state
the analytical expression for the heat generation in the regions.
3.1. Requirements for the division of thermal
microsensors into rectangular regions
The following requirements have to be fullled for the
division of the 2D structure of the thermal microsensor into
regions:
(1) the edges of the region have to coincide with the edges
of the rectangular layers of the thermal microsensor;
(2) the edges of the region have to coincide with the
boundaries of the heat-generating area;
(3) on each edge of the rectangular region only one
boundary condition have to be fulfilled, i.e. on each
edge of the region the heterogeneous boundary
conditions must be absent;
(4) each edge of the rectangular region have to border with
only one adjacent region, i.e. the 2D region structure of
the thermal microsensor have to represent a rectangular
mesh, however, this mesh can be non-periodic on both
co-ordinates.
(5) the total thickness of all layers in each region have to
be much smaller than its other dimensions (length and
width), i.e. for any region, the following conditions have
to be fulfilled

n
i1
d
j
i
! l
j
;

n
i1
d
j
i
! b
j
; (1)
where d
j
i
is the thickness of a layer i in a region j, n the
number of the layers in the region j and l
j
, b
j
the length
and width of the region j, respectively.
Fig. 1. Basic types of thermally isolated structures used in thermal microsensors: (a) cantilever; (b) bridge; (c) three-arm bridge; (d) four-arm bridge; (e)
suspended plate; (f) membrane.
A.G. Kozlov / Sensors and Actuators A 101 (2002) 283298 285
The rst and the fth requirements allow one to sub-
stitute the complicate structure of the thermal microsensor
which consists of a few layers having various dimensions
and parameters with the equivalent structure consisting of a
few rectangular regions each of which has a homogeneous
structure through the thickness and is characterised by
equivalent parameters. The fullment of the second
requirement allows one to use the simple analytical expres-
sion for heat generation in the regions since this heat
generation takes place all over their area. The third require-
ment allows one to write the expression for temperature
distribution in each region through the eigenfunctions.
Finally, the fourth requirement allows one to use the
adjoint boundary conditions only between two regions
lying on one boundary. As it will be shown below, the
fullment of this requirement simplies determination of
the temperature distribution in the structure of the thermal
microsensor.
3.2. Equivalent regions and their parameters
The basic condition, which allows us to substitute the
rectangular region consisting of few layers with various
parameters with the equivalent region with homogeneous
parameters, is the fth requirement (Eq. (1)). In this case, the
temperature gradient along the thickness of the region does
not have to be taken into account and one can assume that a
region has been formed from homogeneous materials with
the following equivalent parameters:
equivalent thickness of the region j, d
j
e
d
j
e

n
i1
k
j
i
d
j
i
; (2)
equivalent thermal conductivity of the region j, l
j
e
l
j
e

n
i1
k
j
i
d
j
i
l
j
i
d
j
e
; (3)
where k
j
i
is the coefficient equal to the ratio of the total
area of a layer i in a region j to the area of this region, l
j
i
is the thermal conductivity of the material of the layer i in
the region j. To ensure high accuracy of the modelling,
the values of coefficients k
j
i
must not be less than 0.5.
Otherwise, it is necessary to divide this region into a
number of subregions with different composition of
layers. The better variant is the variant where, for all
layers, k
j
i
is equal to 1.
Each of the regions marked out in a thermal microsensor
has to be considered in its own co-ordinate system. Further-
more, to simplify the analytical modelling of the tem-
perature distribution in the thermal microsensors, the
co-ordinate systems of all the regions must have identical
disposition of the co-ordinate axes. Therefore, we shall
situate the origin of the co-ordinates in the left lower corner
of each rectangular region. The x-axis will pass from left to
right and y-axis will pass upwards. As an example, the co-
ordinates systems for the regions of the thermal micro-
sensor based on the membrane thermally isolated structure
with one rectangular heat-generating region are shown on
Fig. 2. The boundaries of each rectangular region are
parallel to the co-ordinate axes of its own co-ordinate
system. In this connection, one can introduce the following
denotion for the region boundaries: x-boundaries, which
are parallel to x-axis, and y-boundaries, which are parallel
to y-axis. On the boundary between two adjacent regions,
the co-ordinates parallel to this boundary are identical
between themselves.
3.3. Heat generation in the regions
Some of the regions marked out in the thermal micro-
sensors are the heat-generating ones. Aheat generation takes
place in an absorbing layer (thermal radiation microsensors),
a catalytic layer (catalytic gas microsensors), or a heater
layer (most thermal microsensors). These heat-generating
layers have a small thickness, which is considerably less
than the other dimensions of the layer (their length and
width), like the other layers of the thermal microsensors. In
this case, one can assume that a heat generation takes place
along the entire thickness of the heat-generating regions and
is independent of their thickness. In order to write heat
differential equations for such regions, it is necessary to state
the analytical dependence of the heat generation on the
region co-ordinates. This analytical dependence must be
adequate to the natural conditions of heat generation. For the
majority of the thermal microsensors, it is enough to use a
linear analytical dependence of the heat generation on the
region co-ordinates. In this case, the dependence of the heat
generation on co-ordinates in region j can be represented as
follows:
q
j
q
j
0
q
j
x
x
j
q
j
y
y
j
; (4)
where q
j
is the power of heat generation per unit area in a
region j, q
j
0
, q
j
x
, and q
j
y
are coefcients, x
j
and y
j
are co-
ordinates of the region j.
4. Heat exchange conditions of regions with the
environment and the other regions
The second step of the present analytical modelling is
determining the heat exchange conditions of the regions
with the environment and the other regions. The basic
ways of the heat exchange for each region are the heat
transfer through the ambient air and the radiant transfer
from the lower and upper surfaces of the region and
the thermal conduction transfer through edges with the
adjacent regions and the support bulk silicon substrate.
Consider these ways of a heat exchange in the regions in
detail.
286 A.G. Kozlov / Sensors and Actuators A 101 (2002) 283298
4.1. Heat transfer from the lower and upper surfaces
of the regions
The heat transfer from the lower and upper surfaces of
regions to an environment is realised by means of the
heat transfer through the ambient air and the radiant heat
transfer. The heat transfer through the ambient air from the
lower and upper surfaces of a region j leads to the heat
losses whose power per unit area (N
j
a
) can be presented as
follows:
N
j
a
H
j
a
T
j
T
en
; (5)
where H
j
a
is the surface heat transfer coefcient, T
j
is the
temperature of the region j since based on the conditions (1)
the temperature on the surface of the region is equal to tem-
perature of the region, T
en
is the environment temperature.
The value of the surface heat transfer coefcient (H
j
a
) is
controlled by the design of the thermal microsensor. If the
thermal microsensor is placed in a small package, the value
of the surface heat transfer coefcient is
H
j
a
l
a
1
d
j
l

1
d
j
u
_ _
; (6)
where l
a
is the thermal conductivity of the ambient air, d
j
l
is
the distance between the lower surface of the region j and the
bottom of the etch pit, for thermal microsensors whose
thermally isolated structure was made with a front aniso-
tropic etching, and is the distance between the lower surface
of the region and the bottom of the package, for thermal
microsensors whose thermally isolated structure was made
with a rear anisotropic etching; d
j
u
is the distance between
the upper surface of the region j and the package cap. If the
thermal microsensor is placed in a package whose dimen-
sions are much larger than those of the thermal microsensor,
the surface heat transfer coefcient is
H
j
a
h
c

l
a
d
j
l
; (7)
Fig. 2. Membrane thermally isolated structure and its division into regions.
A.G. Kozlov / Sensors and Actuators A 101 (2002) 283298 287
where h
c
is the convective coefcient for the given structure
of a thermal microsensor.
The radiant heat transfer fromthe lower and upper surfaces
of the region j leads to the heat losses whose power per
unit area (N
j
r
) can be presented as follows:
N
j
r
se
j
l
e
j
u
T
4
j
T
4
en
; (8)
where s is StefanBoltzmann constant, e
j
l
and e
j
u
are the
emissivities of the lower and upper surfaces of the region j,
respectively. If a difference between the temperature of the
region j and the environment temperature is small, that is
T
j
T
en
! T
en
; (9)
expression (8) can be represented as follows:
N
j
r
4se
j
l
e
j
u
T
3
en
T
j
T
en
: (10)
In this case, one can combine Eqs. (5) and (10) and write
the expression for the total power of the surface heat losses
per unit area of the region j (N
j
t
) in the following form
N
j
t
N
j
a
N
j
r
A
j
T
j
T
en
; (11)
where A
j
is the total surface heat transfer coefcient of the
region j equal to
A
j
H
j
a
4se
j
l
e
j
u
T
3
en
: (12)
4.2. Heat transfer through the region edges
The determination of the heat transfer conditions through
the region edges is equivalent to a denition of boundary
conditions on these edges. Depending on a location one can
distinguish the following types of region edges with the
corresponding boundary conditions:
(1) region edges which coincide with the joint line of the
thermally isolated structure and the bulk silicon
substrate; in this case, the bulk silicon substrate is
one of the heat sink whose temperature is equal to the
environment temperature and, therefore, on such edges
the Dirichlet boundary condition must be fulfilled, i.e.
T
j
j
edge
T
en
; (13)
(2) region edges which are contiguous with the ambient
air; for these edges, taking into account the small
thickness of the region in comparison with its length
and width, one can use the homogeneous Neumann
boundary condition
l
j
e
@T
j
@~n

edge
0; (14)
where ~n is the normal to the edge;
(3) region edges which are contiguous with the edges of an
adjacent region; on such edges the adjoint boundary
condition must be fulfilled, i.e. the temperatures and
heat fluxes on the boundary between adjacent regions
(for example, between regions j and s) must be equal
T
j
j
edge
T
s
j
edge
; (15)
P
j
j
edge
P
s
j
edge
; (16)
where P
j
and P
s
are the heat fluxes on the contiguous
edges of the regions j and s, respectively.
To write the temperature distribution in any region with
the help of eigenfunctions it is necessary to have the
Dirichlet, Neumann, or Newton boundary conditions on
the region edges. However, for the region edges, which
are contiguous with the edges of the adjacent regions, this
condition is ruled out. Consequently, the adjoint boundary
condition on such edges should be substituted by other
boundary condition, in particular, the inhomogeneous Neu-
mann boundary condition. In an inhomogeneous Neumann
boundary condition is used the value of the heat ux density
on the boundary of a region. Taking into account that the
equivalent thicknesses of adjacent regions are different it is
necessary to establish the relation between heat ux den-
sities on their boundary. For that it should be used the
equality of the heat uxes on the boundary (second equation
of the adjoint boundary condition (Eq. (16))).
On the boundary between regions j and s (as an example
we consider x-boundary) the heat uxes in the regions are
dened as follows:
P
j;s
j

_
l
j
0
q
j;s
j
d
j
e
@x
j
; (17)
P
j;s
s

_
l
s
0
q
j;s
s
d
s
e
@x
s
; (18)
where q
j;s
j
and q
j;s
s
are the heat ux densities on the conti-
guous edges of the regions j and s, respectively, l
j
l
s
is the
length of the boundary between regions j and s.
Using the second equation of the adjoint boundary con-
ditions between regions j and s (Eq. (16)), Eqs. (17) and (18)
one can write the following relation between the heat ux
densities in the regions j and s on the boundary between
these regions
q
j;s
s
k
j;s
q
j;s
j
; (19)
where
k
j;s

d
j
e
d
s
e
: (20)
The expression (19) connects the heat ux densities on the
boundary of two adjacent regions and allows us to use the
product k
j;s
q
j;s
instead of the heat ux densities q
j;s
j
and
q
j;s
s
. In this case, provided s > j we shall assume that, for
regions with a smaller number (in our case this is region j),
coefcient k
j;s
is equal to 1 and, for regions with a bigger
number (in our case this is region s), coefcient k
j;s
is equal
to the ratio of the equivalent thickness of a region with a
288 A.G. Kozlov / Sensors and Actuators A 101 (2002) 283298
smaller number to the equivalent thickness of a region with a
bigger number. This allows us to use a common approach to
write the temperature distribution in regions with different
numbers, since each region can be at the same time a region
with a smaller number for one adjacent region and a region
with a bigger number for the other. Furthermore, in this case,
the process of the thermal conduction transfer between two
adjacent regions is characterised by one thermal quantity
q
j;s
instead of two quantities q
j;s
j
and q
j;s
s
.
Thus, for the region edges, which are contiguous with
the edges of adjacent regions, one can use the Neumann
boundary conditions as in the case of the edges which are
contiguous with the ambient air. However, these boundary
conditions are inhomogeneous and taking into account the
above ones can be written as follows:
l
j
e
@T
j
@~n

edge
k
j;s
q
j;s
: (21)
Any rectangular region marked out in a structure of
thermal microsensors is characterised by four boundary
conditions according to quantity of the edges. Depending
on these boundary conditions all the regions can be divided
into three basic groups (Fig. 3):
(1) A-type regionsthese regions have Neumann bound-
ary conditions on all four edges;
Fig. 3. Basic types of regions.
A.G. Kozlov / Sensors and Actuators A 101 (2002) 283298 289
(2) B-type regionsthese regions have three Neumann
boundary conditions and one Dirichlet boundary
condition; depending on a location of the edge with
the Dirichlet boundary condition concerning the co-
ordinate system one can distinguish four variants of
B-type regions;
(3) C-type regionsthese regions have two Neumann
boundary conditions and two Dirichlet boundary
conditions, moreover, the edges with the same
boundary conditions have the contact between them-
selves in one of the corners of a region; depending on a
location of the edge couple with the same boundary
conditions concerning the co-ordinate system of the
region one can distinguish four variants of C-type
regions.
Regions with other combinations of boundary conditions
(four Dirichlet boundary conditions; one Neumann bound-
ary condition and three Dirichlet boundary conditions; two
Neumann boundary conditions and two Dirichlet boundary
conditions, the boundaries with the same boundary condi-
tions to be located on the opposite edges of a region) appear
as a result of the division of the structure of thermal
microsensors extremely seldom. Therefore, these regions
will not be considered in the present analytical modelling of
the temperature distribution in thermal microsensors. How-
ever, in case of need, the present analytical model can be
used for such regions too. Furthermore, from such regions
one can obtain several regions of types B and/or C by means
of dividing them into subregions and this is the second
reason why such regions are not included into the group of
regions for which we shall determine the temperature dis-
tribution with the help of Fourier method.
Now, as an example, one can take a description of the
regions in the thermal microsensor with membrane ther-
mally isolated structure (Fig. 2). In this structure, region 0 is
A-type region, regions 14 are B-type regions, and regions
58 are C-type regions.
5. Steady-state heat differential equations for regions
and their solutions
At the third step of the present analytical modelling it is
necessary to write the steady-state heat differential equation
for each region of a thermal microsensor and to solve these
equations by means of Fourier method writing the tempera-
ture distribution in the regions through eigenfunctions.
However, depending on the boundary conditions, in the
structure of a thermal microsensor, the three basic types
of rectangular regions were marked out above. Hence, the
process of the analytical modelling of temperature distribu-
tion is simplied. It is enough to obtain expressions for the
temperature distribution in the three above-mentioned basic
types of regions and then to use the necessary for each region
of any thermal microsensor solutions dening beforehand
the type of this region and its parameters. Thus, there is no
necessity when considering new thermal microsensor to
obtain again the expressions for the temperature distribution
in its regions.
Since the three basic types of regions differ only in their
boundary conditions while they have the same heat
exchange with the environment through the lower and upper
surfaces and are characterised by the equivalent form of a
heat generation, the steady-state heat differential equations
for all the regions must be alike. The typical form of the
steady-state heat differential equation for all the regions can
be represented as follows:
l
j
e
d
j
e
@
2
T
j
@x
2
j
l
j
e
d
j
e
@
2
T
j
@y
2
j
A
j
T
j
T
en

q
j
0
q
j
x
x
j
q
j
y
y
j
: (22)
Eq. (22) was obtained by using expression (11) for the heat
exchange with the environment through the lower and upper
surfaces of a region j and expression (4) for the heat
generation in this region. Eq. (22) can be rewritten as
follows:
@
2
T
0
j
@x
2
j

@
2
T
0
j
@y
2
j
p
2
j
T
0
j
j
j
0
j
j
x
x
j
j
j
y
y
j
; (23)
where
T
0
j
T
j
T
en
; (24)
p
j

A
j
l
j
e
d
j
e

; (25)
j
j
0

q
j
0
l
j
e
d
j
e
; j
j
x

q
j
x
l
j
e
d
j
e
;
j
j
y

q
j
y
l
j
e
d
j
e
: (26)
The solution of Eq. (23) with using the corresponding
boundary conditions for each type of regions allows us to
determine the temperature distribution in these types of
regions.
5.1. Temperature distribution in A-type regions
The structure of A-type region is shown in Fig. 4. On all
boundaries of this region the Neumann boundary conditions
are fullled. These conditions can be written in the following
form
l
j
e
@T
0
j
@x
j

x
j
l
j
k
j;s
q
j;s
; (27)
l
j
e
@T
0
j
@y
j

y
j
b
j
k
j;t
q
j;t
; (28)
290 A.G. Kozlov / Sensors and Actuators A 101 (2002) 283298
l
j
e
@T
0
j
@x
j

x
j
0
k
j;u
q
j;u
; (29)
l
j
e
@T
0
j
@y
j

y
j
0
k
j;v
q
j;v
: (30)
The solution of the Eq. (23) for A-type region with
boundary conditions (27)(30) can be obtained by Fourier
method and written with the help of the eigenfunctions. In
this case, in general, the steady-state temperature distri-
bution in A-type region can be represented as follows
[16]:
T
0
j
x
j
; y
j

1
k0

1
m0
C
j
km
jjC
j
km
jj
2
1
g
j
km

2
_
l
j
0
_
b
j
0
C
j
km
j
j
0
j
j
x
x
j
j
j
y
y
j
dx
j
dy
j

1
k0

1
m0
C
j
km
jjC
j
km
jj
2
1
g
j
km

_
L
j
Y
j
km
x
j
; y
j

x
j
;y
j
2L
j
dx
j
; (31)
where C
j
km
are the eigenfunctions of the homogeneous
boundary value problem for A-type region, jjC
j
km
jj
2
is the
square of a norm of the eigenfunctions, g
j
km

2
are the
eigenvalues of the homogeneous boundary value problem
for A-type region, Y
j
km
x
j
; y
j
is the function given on
boundary contour L
j
which depends on the boundary con-
ditions and the eigenfunctions of the region, dx
j
is the
differential of an arc length of boundary contour.
The eigenfunctions of the homogeneous boundary value
problem for A-type region are
C
j
km
cos
kpx
j
l
j
_ _
cos
mpy
j
b
j
_ _
: (32)
The corresponding eigenvalues are
g
j
km

kp
l
j
_ _
2

mp
b
j
_ _
2
p
2
j
: (33)
The square of a normof the eigenfunctions depends on the
values of indices k and m and is equal to
jjC
j
km
jj
2
l
j
b
j
; for k 0 and m 0; (34)
jjC
j
km
jj
2

l
j
b
j
2
; for k 0 and m > 0; (35)
jjC
j
km
jj
2

l
j
b
j
2
; for k > 0 and m 0; (36)
jjC
j
km
jj
2

l
j
b
j
4
; for k > 0 and m > 0: (37)
The function Y
j
km
x
j
; y
j
can be determined as follows:
Y
j
km
x
j
; y
j

x
j
;y
j
2L
j
C
j
km
@T
0
j
@~n
j

x
j
;y
j
2L
j
; (38)
where ~n is the normal to the boundary of the region. The
values of @T
0
j
=@~n
j
j
x
j
;y
j
2L
j
in each point of contour L
j
can be
dened by using the boundary conditions for the region.
The differential of arc length of the boundary contour is
dx
j

dx
j

2
dy
j

2
_
: (39)
In order to use expression (31) for calculating the tem-
perature distribution in the A-type region it is necessary to
transform this expression to a form, which contains only
algebraic parts. For this purpose, each component of the
expression (31) should be considered separately. First com-
ponent of expression (31) can be transformed to the follow-
ing form by using Eqs. (32)(37) and calculating the denite
integral

1
k0

1
m0
C
j
km
jjC
j
km
jj
2
1
g
j
km

_
l
j
0
_
b
j
0
C
j
km
j
j
0
j
j
x
x
j
j
j
y
y
j
dx
j
dy
j
F
j
0

2j
j
x
l
j
p
2

1
k1
1
k
1
k
2
kp=l
j

2
p
2
j

cos
kpx
j
l
j
_ _

2j
j
y
b
j
p
2

1
m1
1
m
1
m
2
mp=b
j

2
p
2
j

cos
mpy
j
b
j
_ _
; (40)
where
F
j
0

j
j
0
p
2
j

j
j
x
l
j
2p
2
j

j
j
y
b
j
2p
2
j
: (41)
To transform the second component it is necessary to
determine the function Y
j
km
x
j
; y
j
on all sections of bound-
ary contour L
j
. Contour L
j
is shown in Fig. 4 and have four
sections (AB, BC, CO, OA) on which the boundary condi-
tions are different. In this connection, the contour integral in
Fig. 4. A-type region and heat flux densities on its edges.
A.G. Kozlov / Sensors and Actuators A 101 (2002) 283298 291
second component of expression (31) must be presented as
the sum of line integrals over sections
_
L
j
Y
j
km
x
j
; y
j

x
j
;y
j
2L
j
dx
j

_
AB
Y
j
km
x
j
; y
j

x
j
;y
j
2AB
dx
j

_
BC
Y
j
km
x
j
; y
j

x
j
;y
j
2BC
dx
j

_
CO
Y
j
km
x
j
; y
j

x
j
;y
j
2CO
dx
j

_
OA
Y
j
km
x
j
; y
j

x
j
;y
j
2OA
dx
j
: (42)
Using Eq. (38) one can determine the values of the function
Y
j
km
x
j
; y
j
on each section of contour L
j
. These values are
section AB (x
j
l
j
)
Y
j
km
x
j
; y
j

x
j
;y
j
2AB

1
k
l
j
e
k
j;s
q
j;s
y
j
cos
mpy
j
b
j
_ _
;
(43)
section BC (y
j
b
j
)
Y
j
km
x
j
; y
j

x
j
;y
j
2BC

1
m
l
j
e
k
j;t
q
j;t
x
j
cos
kpx
j
l
j
_ _
;
(44)
section CO (x
j
0)
Y
j
km
x
j
; y
j

x
j
;y
j
2CO

1
l
j
e
k
j;u
q
j;u
y
j
cos
mpy
j
b
j
_ _
;
(45)
section OA (y
j
0)
Y
j
km
x
j
; y
j

x
j
;y
j
2OA

1
l
j
e
k
j;v
q
j;v
x
j
cos
kpx
j
l
j
_ _
:
(46)
Using Eqs. (39) and (43)(46) the second component of
Eq. (31) can be written as follows:

1
k0

1
m0
C
j
km
jjC
j
km
jj
2
1
g
j
km

2
_
L
j
Y
j
km
x
j
; y
j

x
j
;y
j
2L
j
dx
j

1
l
j
e

1
k0

1
m0
C
j
km
jjC
j
km
jj
2
1
g
j
km

_
1
k
k
j;s
_
b
j
0
q
j;s
y
j
cos
mpy
j
b
j
_ _
dy
j
1
m
k
j;t
_
l
j
0
q
j;t
x
j
cos
mpx
j
l
j
_ _
dx
j
k
j;u
_
b
j
0
q
j;u
y
j
cos
mpy
j
b
j
_ _
dy
j
k
j;v
_
l
j
0
q
j;v
x
j
cos
mpx
j
l
j
_ _
dx
j
_
: (47)
In Eq. (47) unknown quantities are the heat ux densities
on the boundaries of the region with adjacent regions
q
j;s
y
j
, q
j;t
x
j
, q
j;u
y
j
, q
j;v
x
j
. These heat ux den-
sities depend only on one of the co-ordinates x
j
or y
j
since the
region has the rectangular shape and its edges are parallel to
the co-ordinates. The dependencies of the heat ux densities
on the corresponding co-ordinate can be determined from
the rst expressions of adjoint boundary conditions
(Eq. (15)). However, usage of the expressions for the
temperature where the unknown quantities are parts of
the integrands in the adjoint boundary conditions requires
solution of the integral equations. This approach is very
difcult. Nevertheless, one can avoid this difculty if the
integrals with the unknown quantities are transformed to
algebraic expressions. As an example, we shall demonstrate
this transformation on the basis of the rst denite integral in
Eq. (47) that is
_
b
j
0
q
j;s
y
j
cos
mpy
j
b
j
_ _
dy
j
; m 0; 1; . . . ; 1: (48)
The function q
j;s
y
j
being a part of the integrand in (48)
can be presented as a sum of orthogonal functions W
j;s
m
0
y
j

with weighting coefcients d


j;s
m
0
, which are independent of
y
j
-co-ordinate and correspond to the relative contribution of
each orthogonal function
q
j;s
y
j

1
m
0
0
d
j;s
m
0
W
j;s
m
0
y
j
: (49)
Orthogonal functions W
j;s
m
0
y
j
must satisfy the following
orthonormalization conditions
_
b
j
0
W
j;s
m
0
y
j
cos
mpy
j
b
j
_ _
dy
j
1; for m
0
m; (50)
_
b
j
0
W
j;s
m
0
y
j
cos
mpy
j
b
j
_ _
dy
j
0; for m
0
6 m: (51)
In this case, taking into account Eq. (49) and conditions (50)
and (51) the denite integral (48) can be represent as
follows:
_
b
j
0
q
j;s
y
j
cos
mpy
j
b
j
_ _
dy
j
d
j;s
m
: (52)
Thus, the present procedure allows us to substitute the
denite integral (48), whose integrand is equal to the product
of the unknown function q
j;s
y
j
and the eigenfunction
cosmpy
j
=b
j
(both functions depend on one co-ordinate
y
j
), by unknown weighting coefcient d
j;s
m
. In this case, the
unknown function q
j;s
y
j
can not be found. However, if a
need of determining this function arises, it can be found by
using Eq. (49). At this point, orthogonal functions W
j;s
m
0 y
j

in Eq. (49) are determined from conditions (50) and (51) and
weighting coefcients d
j;s
m
0
are determined by a method
which will be considered below.
292 A.G. Kozlov / Sensors and Actuators A 101 (2002) 283298
In the same manner, one can transform the rest of the
integrals in Eq. (47)
_
l
j
0
q
j;t
x
j
cos
kpx
j
l
j
_ _
dx
j
d
j;t
k
; (53)
_
b
j
0
q
j;u
y
j
cos
mpy
j
b
j
_ _
dy
j
d
j;u
m
; (54)
_
l
j
0
q
j;v
x
j
cos
kpx
j
l
j
_ _
dx
j
d
j;v
k
: (55)
Finally, using Eqs. (32)(37), (40), (47) and (52)(55) in
(31) yields the following expression for the temperature
distribution in A-type regions
In Eq. (56) the unknown quantities are the weighting
coefcients d
j;s
m
, d
j;t
k
, d
j;u
m
, and d
j;v
k
.
5.2. Temperature distribution in B- and C-type
regions
The temperature distribution in B- and C-type regions can
be found in the analogous way as in the case of the
temperature distribution in A-type region. However, for
B- and C-type regions, due to distinctions in boundary
conditions the eigenfunctions and eigenvalues are different
from those for A-type region. The nal expressions for the
temperature distributions in B- and C-type regions are given
in the Appendix A.
6. Determination of parameters characterising
process of thermal conduction between regions
In the previous section, for each type of regions, the
analytical expressions for the temperature distribution have
been determined. These analytical expressions contain the
unknown weighting coefcients. Therefore, the nal step of
the present analytical modelling determines the values of
these coefcients. This problem can be solved by using rst
equation of adjoint boundary conditions (Eq. (15)) between
adjacent regions, i.e. the temperature equality conditions on
the boundaries between adjacent regions.
As an example, consider the boundary between regions 0
and 1 in the thermal microsensor with the membrane
thermally isolated structure (Fig. 2). This boundary is y-
boundary. Region 0 is a heat-generating one and region 1 is
not a heat-generating one. The rst adjoint boundary con-
dition on the boundary between regions 0 and 1 is
T
0
j
x
0
l
0
T
1
j
x
1
0
: (57)
Using the expressions for the temperature distributions in
region 0 and 1 in Eq. (57) yields to
T
0
j
x
j
; y
j
F
j
0

2j
j
x
l
j
p
2

1
k1
1
k
1
k
2
kp=l
j

2
p
2
j

cos
kpx
j
l
j
_ _

2j
j
y
b
j
p
2

1
m1
1
m
1
m
2
mp=b
j

2
p
2
j

cos
mpy
j
b
j
_ _

k
j;s
d
j;s
0
k
j;t
d
j;t
0
k
j;u
d
j;u
0
k
j;v
d
j;v
0
l
j
b
j
l
j
e
p
2
j

2
l
j
b
j
l
j
e

1
k1
1
k
k
j;s
d
j;s
0
k
j;t
d
j;t
k
k
j;u
d
j;u
0
k
j;v
d
j;v
k
kp=l
j

2
p
2
j
cos
kpx
j
l
j
_ _

2
l
j
b
j
l
j
e

1
m1
k
j;s
d
j;s
m
1
m
k
j;t
d
j;t
0
k
j;u
d
j;u
m
k
j;v
d
j;v
0
mp=b
j

2
p
2
j
cos
mpy
j
b
j
_ _

4
l
j
b
j
l
j
e

1
k1

1
m1
1
k
k
j;s
d
j;s
m
1
m
k
j;t
d
j;t
k
k
j;u
d
j;u
m
k
j;v
d
j;v
k
kp=l
j

2
mp=b
j

2
p
2
j
cos
kpx
j
l
j
_ _
cos
mpy
j
b
j
_ _
: (56)
d
0;1
0
d
0;2
0
d
0;3
0
d
0;4
0
l
0
b
0
l
0
e
p
2
0

2
l
0
b
0
l
0
e

1
k1
1
k
1
k
d
0;1
0
d
0;2
k
d
0;3
0
d
0;4
k

kp=l
0

2
p
2
0

2
l
0
b
0
l
0
e

1
m1
d
0;1
m
1
m
d
0;2
0
d
0;3
m
d
0;4
0
mp=b
0

2
p
2
0
cos
mpy
0
b
0
_ _

4
l
0
b
0
l
0
e

1
k1

1
m1
1
k
1
k
d
0;1
m
1
m
d
0;2
k
d
0;3
m
d
0;4
k

kp=l
0

2
mp=b
0

2
p
2
0
cos
mpy
0
b
0
_ _

2
l
1
b
1
l
1
e

1
k1
k
0;1
d
0;1
0
d
1;5
k
d
1;8
k
2k 1p=2l
1

2
p
2
1

4
l
1
b
1
l
1
e

1
k1

1
m1
k
0;1
d
0;1
m
1
m
d
1;5
k
d
1;8
k
2k 1p=2l
1

2
mp=b
1

2
p
2
1
cos
mpy
1
b
1
_ _
F
j
0

2j
0
x
l
0
p
2

1
k1
1 1
k
k
2
kp=l
0

2
p
2
0

2j
0
y
b
0
p
2

1
m1
1
m
1
m
2
mp=b
0

2
p
2
0

cos
mpy
0
b
0
_ _
: (58)
A.G. Kozlov / Sensors and Actuators A 101 (2002) 283298 293
In Eq. (58) the quantities y
0
and y
1
, b
0
and b
1
are identical,
i.e. y
0
y
1
and b
0
b
1
. Furthermore, in this equation,
coefcients k
j;s
are represented in accordance with the
proposition of Section 4 (only for the heat ux densities
in regions with the greater numbers).
To determine the weighting coefcients in Eq. (58) it is
necessary (i) to pass on to nite sums in this equation (to
vary index k from 0 to s and index m from 0 to t, where s
and t are the whole numbers and have high values:
s ! 1; t ! 1), (ii) to represent this equation as a
sum of equations according to index m, and (iii) to divide
this equation into t 1 equations for each value of m. In
this case, the following rule should be used. The tem-
perature equality equation for y-boundary is divided into
t 1 equations and the temperature equality equation for
x-boundary is divided into s 1 equations. Dividing the
Eq. (58) into t 1 equations and eliminating the eigen-
functions of y
0
and y
1
in each obtained equation yield to
the following system of equations concerning weighting
coefcients
d
0;1
0
d
0;2
0
d
0;3
0
d
0;4
0
l
0
b
0
l
0
e
p
2
0

2
l
0
b
0
l
0
e

s
k1
1
k
1
k
d
0;1
0
d
0;2
k
d
0;3
0
d
0;4
k

kp=l
0

2
p
2
0

2
l
1
b
1
l
1
e

s
k1
k
0;1
d
0;1
0
d
1;5
k
d
1;8
k
2k 1p=2l
1

2
p
2
1

j
0
0
p
2
0

j
0
x
l
0
2p
2
0

j
0
y
b
0
2p
2
0

2j
0
x
l
0
p
2

s
k1
1 1
k
k
2
kp=l
0

2
p
2
0

; (59)
for m 0, and
for m 1; . . . ; t.
This system of equations is that of linear equations. Each
equation of the system contains one unknown weighting
coefcient for each heat ux density owing through y-
boundaries (weighting coefcients with subscript m) and
s 1 unknown weighting coefcients for each heat ux
density owing through x-boundaries (weighting coef-
cients with subscript k). On the contrary, for the tem-
perature equality on x-boundary, each equation of the
analogous system will contain one unknown weighting
coefcient for each heat ux density owing through
x-boundaries (weighting coefcients with subscript k)
and t 1 unknown weighting coefcients for each heat ux
density owing through y-boundaries (weighting coef-
cients with subscript m).
However, the obtained system of linear equations for one
boundary between regions in the thermal microsensor is
incomplete systemconcerning the weighting coefcients. To
obtain the complete systemfor all weighting coefcients it is
necessary, rstly, to write the temperature equality condition
for each boundary, secondly, to obtain the systems of linear
equations for each boundary (analogously for the boundary
between region 0 and 1) and, thirdly, to unite the systems of
linear equations for all boundaries into one generalised
system of linear equations. This generalised system contains
s 1N
x
t 1N
y
equations (N
x
and N
y
are the quan-
tities of x-boundaries and y-boundaries, respectively) and so
many unknown weighting coefcients. It is convenient to
write this generalised system in a matrix representation
MD U; (61)
where M is the matrix of the coefcients; D is the vector of
the unknown weighting coefcients; U is the vector of the
right parts.
The matrix Mcan be represented as the block matrix with
the submatrixes, which characterise each set of coefcients
attached to the weighting coefcients on each boundary. In
this case, one can distinguish the following types of the
submatrixes:
diagonal submatrixes for coefficients with subscript k
on x-boundaries and coefficients with subscript m on
y-boundaries;
complete submatrixes for coefficients with subscript k
on y-boundaries and coefficients with subscript m on
x-boundaries;
zero submatrixes for coefficients attached to weighting
coefficients, which are not members of the temperature
equality equation for the given boundary.
Analogously, one can represent the vectors D and U. The
vector D contains the subvectors, each of which consists
of the weighting coefcients for the heat ux density on the
given boundary. The vector U contains the subvectors,
each of which consists of the right parts of the equations
obtained from the temperature equality equation for the
given boundary.
2
l
0
b
0
l
0
e
d
0;1
m
1
m
d
0;2
0
d
0;3
m
d
0;4
0
mp=b
0

2
p
2
0

4
l
0
b
0
l
0
e

s
k1
1
k
1
k
d
0;1
m
1
m
d
0;2
k
d
0;3
m
d
0;4
k

kp=l
0

2
mp=b
0

2
p
2
0

4
l
0
b
0
l
0
e

s
k1
k
0;1
d
0;1
m
1
m
d
1;5
k
d
1;8
k
2k 1p=2l
1

2
mp=b
1

2
p
2
1

2j
0
y
b
0
p
2
1
m
1
m
2
mp=b
0

2
p
2
0

; (60)
294 A.G. Kozlov / Sensors and Actuators A 101 (2002) 283298
For example, for the thermal microsensor based on the
membrane thermally isolated structure shown in Fig. 2, the
components of Eq. (61) can be written using the block matrix
representation as follows:
In the designation of the submatrixes and the subvectors, the
superscript designates that the submatrix or subvector con-
cerns the boundary between the appointed regions (for
example, superscript (0, 1) designates the boundary between
regions 0 and 1). The subscript designates the dependence of
submatrix (or subvector) component on index k or m.
Each row of the block matrix representation in the matrix M
corresponds to the equation system of the temperature
equality on the appointed boundary whose location is
dened by the superscript index of submatrix being a
member of this row and placed in diagonal of the matrix
M. For example, the third row in matrix M (Eq. (62))
corresponds to the equation system for temperature equality
on the boundary between regions 0 and 3 since submatrix
C
0;3
m
is situated in the diagonal of matrix M. Subscript m
indicates that this boundary is y-boundary.
The block matrix representation is convenient to obtain
the complete system of the equations and also it can be used
to determine the temperature distribution in several regions
of the thermal microsensors.
In general, the system of the linear Eq. (61) contains a
great number of unknown weighting coefcients and equa-
tions. However, for practical application, the number of
unknown weighting coefcients and equations can be
restricted in terms of a necessary accuracy of a solution
by choosing the limited values of s and t. In this case, the
system of the linear Eq. (61) is solved by known methods.
The weighting coefcients found as a result of this solution
allowone to determine nally the temperature distribution in
regions of the thermal microsensor.
7. Conclusion
In this paper, the method of modelling the steady-state
temperature distribution in 2D structure like thermal micro-
M
A
0;1
m
A
0;2
k
A
0;3
m
A
0;4
k
A
1;5
k
A
1;8
k
0 0 0 0 0 0
B
0;1
m
B
0;2
k
B
0;3
m
B
0;4
k
0 0 B
2;5
m
B
2;6
m
0 0 0 0
C
0;1
m
C
0;2
k
C
0;3
m
C
0;4
k
0 0 0 0 C
3;6
k
C
3;7
k
0 0
D
0;1
m
D
0;2
k
D
0;3
m
D
0;4
k
0 0 0 0 0 0 D
4;7
m
D
4;8
m
E
0;1
m
0 0 0 E
1;5
k
E
1;8
k
E
2;5
m
0 0 0 0 0
F
0;1
m
0 0 0 F
1;5
k
F
1;8
k
0 0 0 0 0 F
4;8
m
0 G
0;2
k
0 0 G
1;5
k
0 G
2;5
m
G
2;6
m
0 0 0 0
0 H
0;2
k
0 0 0 0 H
2;5
m
H
2;6
m
H
3;6
k
0 0 0
0 0 I
0;3
m
0 0 0 0 I
2;6
m
I
3;6
k
I
3;7
k
0 0
0 0 J
0;3
m
0 0 0 0 0 J
3;6
k
J
3;7
k
J
4;7
m
0
0 0 0 K
0;4
k
0 0 0 0 0 K
3;7
k
K
4;7
m
K
4;8
m
0 0 0 L
0;4
k
0 L
1;8
k
0 0 0 0 L
4;7
m
L
4;8
m
_

_
_

_
;
D
D
0;1
m
D
0;2
k
D
0;3
m
D
0;4
k
D
1;5
k
D
1;8
k
D
2;5
m
D
2;6
m
D
3;6
k
D
3;7
k
D
4;7
m
D
4;8
m
_

_
_

_
; U
U
0;1
m
U
0;2
k
U
0;3
m
U
0;4
k
0
0
0
0
0
0
0
0
_

_
_

_
: (62)
A.G. Kozlov / Sensors and Actuators A 101 (2002) 283298 295
sensors is presented. The method is based upon division of
the realistic 2D structure into rectangular regions whose
structures are substituted by equivalent structures with
homogeneous parameters. For each rectangular region,
the analytical expression of the temperature distribution is
determined using Fourier method. In addition, each heat ux
density between adjacent regions is dened as the sum of
orthogonal functions with unknown weighting coefcients.
In order to nd the unknown weighting coefcients are used
the adjoint boundary conditions on the boundaries between
the adjacent regions. In general, the determination of the
weighting coefcients is reduced to solving a system of
linear equations.
In part 2 of this paper, the practical application of the
present method for modelling the temperature distribution in
a number of thermal microsensors will be considered.
However, at this part the following remarks should be made
concerning the present method.
1. Stating this method, we used the linear law for the heat
generation in regions. However, one can use more
complicate laws for the heat generation. In this case, the
basic condition is the ability of determining the definite
integral, which takes into account the heat generation in
an analytical expression for temperature distribution (for
example, the first term in the right part of Eq. (31)).
2. In the present analytical modelling, we considered the
three basic types of regions in 2D structure. However,
this method can be used in 2D structures with other
types of regions.
3. In a number of cases, the present method of modelling
the temperature distribution in 2D structure can
substitute numerical methods. However, to determine
the advantages of this method over numerical methods it
is necessary to carry out comparative investigations on a
number of the parameters (accuracy, rapidity and other).
For the present, the basic advantage of this method is a
possibility to obtain the analytical expressions for the
temperature distribution in thermal microsensors that
can be used in other applications (for example, the
computer aided design and the analytical optimisation of
thermal microsensors).
Appendix A
A.1. Temperature distribution in B-type regions
B1-type region:
T
0
j
x
j
; y
j
2

1
k1
1
2k 1p=2l
j

2
p
2
j
2j
j
0
2k 1p

j
j
y
b
j
2k 1p
_ _
1
k
2j
j
x
l
j
2
2k 1p
2

1
k
2k 1p
_ _ _ _
cos
2k 1px
j
2l
j
_ _
8j
j
y
b
j

1
k1

1
m1
1
k
1
m
1
f2k 1p=2l
j

2
mp=b
j

2
p
2
j
g2k 1m
2
p
3
cos
2k 1px
j
2l
j
_ _
cos
mpy
j
b
j
_ _

2
l
j
b
j
l
j
e

1
k1
k
j;t
d
j;t
k
k
j;u
d
j;u
0
k
j;v
d
j;v
k
2k 1p=2l
j

2
p
2
j
cos
2k 1px
j
2l
j
_ _

4
l
j
b
j
l
j
e

1
k1

1
m1
1
m
k
j;t
d
j;t
k
k
j;u
d
j;u
m
k
j;v
d
j;v
k
2k 1p=2l
j

2
mp=b
j

2
p
2
j
cos
2k 1px
j
2l
j
_ _
cos
mpy
j
b
j
_ _
:
B2-type region:
T
0
j
x
j
; y
j
2

1
m1
1
2m 1p=2b
j

2
p
2
j
2j
j
0
2m 1p

j
j
x
l
j
2m 1p
_ _
1
m

_
2j
j
y
b
j
2
2m 1p
2

1
m
2m 1p
_ __
cos
2m 1py
j
2b
j
_ _
8j
j
x
l
j

1
k1

1
m1
1
m
1
k
1
kp=l
j

2
2m 1p=2b
j

2
p
2
j
2m 1k
2
p
3
cos
kpx
j
l
j
_ _
cos
2m 1py
j
2b
j
_ _

2
l
j
b
j
l
j
e

1
m1
k
j;s
d
j;s
m
k
j;u
d
j;u
m
k
j;v
d
j;v
0
2m 1p=2b
j

2
p
2
j
cos
2m 1py
j
2b
j
_ _

4
l
j
b
j
l
j
e

1
k1

1
m1
1
k
k
j;s
d
j;s
m
k
j;u
d
j;u
m
k
j;v
d
j;v
k
kp=l
j

2
2m 1p=2b
j

2
p
2
j
cos
kpx
j
l
j
_ _
cos
2m 1py
j
2b
j
_ _
:
296 A.G. Kozlov / Sensors and Actuators A 101 (2002) 283298
B3-type region:
T
0
j
x
j
; y
j
2

1
k1
1
2k 1p=2l
j

2
p
2
j
2j
j
0
2k 1p

j
j
y
b
j
2k 1p

41
k
j
j
x
l
j
2k 1p
2
_ _
sin
2k 1px
j
2l
j
_ _
8j
j
y
b
j

1
k1

1
m1
1
m
1
f2k 1p=2l
j

2
mp=b
j

2
p
2
j
g2k 1m
2
p
3
sin
2k 1px
j
2l
j
_ _
cos
mpy
j
b
j
_ _

2
l
j
b
j
l
j
e

1
k1
1
k
k
j;s
d
j;s
0
k
j;t
d
j;t
k
k
j;v
d
j;v
k
2k 1p=2l
j

2
p
2
j
sin
2k 1px
j
2l
j
_ _

4
l
j
b
j
l
j
e

1
k1

1
m1
1
k
k
j;s
d
j;s
m
1
m
k
j;t
d
j;t
k
k
j;v
d
j;v
k
2k 1p=2l
j

2
mp=b
j

2
p
2
j
sin
2k 1px
j
2l
j
_ _
cos
mpy
j
b
j
_ _
:
B4-type region:
T
0
j
x
j
; y
j
2

1
m1
1
2m 1p=2b
j

2
p
2
j
2j
j
0
2m 1p

j
j
x
l
j
2m 1p

41
m
j
j
y
b
j
2m 1p
2
_ _
sin
2m 1py
j
2b
j
_ _
8j
j
x
l
j

1
k1

1
m1
1
k
1
fkp=l
j

2
2m 1p=2b
j

2
p
2
j
g2m 1k
2
p
3
cos
kpx
j
l
j
_ _
sin
2m 1py
j
2b
j
_ _

2
l
j
b
j
l
j
e

1
m1
k
j;s
d
j;s
m
1
m
k
j;t
d
j;t
0
k
j;u
d
j;u
m
2m 1p=2b
j

2
p
2
j
sin
2m 1py
j
2b
j
_ _

4
l
j
b
j
l
j
e

1
k1

1
m1
1
k
k
j;s
d
j;s
m
1
m
k
j;t
d
j;t
k
k
j;u
d
j;u
m
kp=l
j

2
2m 1p=2b
j

2
p
2
j
cos
kpx
j
l
j
_ _
sin
2m 1py
j
2b
j
_ _
:
A.2. Temperature distribution in C-type regions
C1-type region:
T
0
j
x
j
; y
j
16

1
k1

1
m1
j
j
0
1
k
1
m
j
j
x
l
j
1
m
1
k
2=2k 1p j
j
y
b
j
1
k
1
m
2=2m 1p
f2k 1p=2l
j

2
2m 1p=2b
j

2
p
2
j
g2k 12m 1p
2
cos
2k 1px
j
2l
j
_ _
cos
2m 1py
j
2b
j
_ _

4
l
j
b
j
l
j
e

1
k1

1
m1
k
j;u
d
j;u
m
k
j;v
d
j;v
k
2k 1p=2l
j

2
2m 1p=2b
j

2
p
2
j
cos
2k 1p
2l
j
_ _
cos
2m 1py
j
2b
j
_ _
:
C2-type region:
T
0
j
x
j
; y
j
16

1
k1

1
m1
j
j
0
1
m
j
j
x
l
j
1
k
1
m
2=2k 1p j
j
y
b
j
1
m
2=2m 1p
f2k 1p=2l
j

2
2m 1p=2b
j

2
p
2
j
g2k 12m 1p
2
sin
2k 1px
j
2l
j
_ _
cos
2m 1py
j
2b
j
_ _

4
l
j
b
j
l
j
e

1
k1

1
m1
1
k
k
j;s
d
j;s
m
k
j;v
d
j;v
k
2k 1p=2l
j

2
2m 1p=2b
j

2
p
2
j
sin
2k 1p
2l
j
_ _
cos
2m 1py
j
2b
j
_ _
:
C3-type region:
T
0
j
x
j
; y
j
16

1
k1

1
m1
j
j
0
j
j
x
l
j
1
k
2=2k 1p j
j
y
b
j
1
m
2=2m 1p
f2k 1p=2l
j

2
2m 1p=2b
j

2
p
2
j
g2k 12m 1p
2
sin
2k 1px
j
2l
j
_ _
sin
2m 1py
j
2b
j
_ _

4
l
j
b
j
l
j
e

1
k1

1
m1
1
k
k
j;s
d
j;s
m
1
m
k
j;t
d
j;t
k
2k 1p=2l
j

2
2m 1p=2b
j

2
p
2
j
sin
2k 1p
2l
j
_ _
sin
2m 1py
j
2b
j
_ _
:
A.G. Kozlov / Sensors and Actuators A 101 (2002) 283298 297
References
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[3] F. Volklein, H. Baltes, Optimisation tool for the performance
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Biography
Alexander G. Kozlov was born in Omsk, Russia, in 1955. He received the
diploma of an engineer in radioelectronics from the Technical Institute of
Omsk in 1977 and the PhD degree in microelectronics from the
Electrotechnical Institute of St. Petersburg, Russia in 1984. From 1977
to 1981 and from 1985 to 1991 he was with the Technical Institute of
Omsk working in consecutive order assistant lecturer, lecturer. From 1981
to 1984 he was doctoral student in the Electrotechnical Institute of St.
Petersburg, Russia. Since 1992, he has been with the Institute of Sensor
Microelectronics RAS where he is presently a head of laboratory. From
1993 to 1998, he was a visiting associate professor at Omsk State
Technical University. Since 2000, he is a visiting associate professor at
Omsk State University. His current research interests are solid state gas
sensors, simulation and optimisation of semiconductor and thin-film
microsensors.
C4-type region:
T
0
j
x
j
; y
j
16

1
k1

1
m1
j
j
0
1
k
j
j
x
l
j
1
k
2=2k 1p j
j
y
b
j
1
k
1
m
2=2m 1p
f2k 1p=2l
j

2
2m 1p=2b
j

2
p
2
j
g2k 12m 1p
2
cos
2k 1px
j
2l
j
_ _
sin
2m 1py
j
2b
j
_ _

4
l
j
b
j
l
j
e

1
k1

1
m1
1
m
k
j;t
d
j;t
k
k
j;u
d
j;u
m
2k 1p=2l
j

2
2m 1p=2b
j

2
p
2
j
cos
2k 1p
2l
j
_ _
sin
2m 1py
j
2b
j
_ _
:
298 A.G. Kozlov / Sensors and Actuators A 101 (2002) 283298

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