PD - 9.

690A

IRGBC40S
INSULATED GATE BIPOLAR TRANSISTOR
Features
Switching-loss rating includes all "tail" losses Optimized for line frequency operation ( to 400 Hz) See Fig. 1 for Current vs. Frequency curve
G E C

Standard Speed IGBT

VCES = 600V VCE(sat) 1.8V

@VGE = 15V, I C = 31A

n-channel
Description
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of high-voltage, highcurrent applications.

TO-220AB
Absolute Maximum Ratings
Parameter
VCES IC @ T C = 25C IC @ T C = 100C ICM ILM VGE EARV PD @ T C = 25C PD @ T C = 100C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Gate-to-Emitter Voltage Reverse Voltage Avalanche Energy Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting torque, 6-32 or M3 screw.

Max.
600 50 31 240 100 20 15 160 65 -55 to +150 300 (0.063 in. (1.6mm) from case) 10 lbfin (1.1Nm)

Units
V A

V mJ W

Thermal Resistance
Parameter
RJC RCS RJA Wt Junction-to-Case Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Weight

Min.

Typ.
0.50 2.0 (0.07)

Max.
0.77 80

Units
C/W g (oz)
Revision 0

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IRGBC40S
Electrical Characteristics @ T = 25C (unless otherwise specified) J
V(BR)CES V(BR)ECS
V(BR)CES/TJ

VCE(on)

Parameter Collector-to-Emitter Breakdown Voltage Emitter-to-Collector Breakdown Voltage Temp. Coeff. of Breakdown Voltage Collector-to-Emitter Saturation Voltage

VGE(th) VGE(th)/TJ gfe ICES IGES

Gate Threshold Voltage Temp. Coeff. of Threshold Voltage Forward Transconductance Zero Gate Voltage Collector Current Gate-to-Emitter Leakage Current

Min. Typ. Max. Units Conditions 600 V VGE = 0V, I C = 250A 20 V VGE = 0V, IC = 1.0A 0.75 V/C VGE = 0V, I C = 1.0mA 1.6 1.8 IC = 31A V GE = 15V 2.2 V IC = 60A See Fig. 2, 5 1.7 IC = 31A, T J = 150C 3.0 5.5 VCE = VGE, IC = 250A -9.3 mV/C VCE = VGE, IC = 250A 12 21 S VCE = 100V, I C = 31A 250 A VGE = 0V, V CE = 600V 1000 VGE = 0V, V CE = 600V, T J = 150C 100 nA VGE = 20V

Switching Characteristics @ T = 25C (unless otherwise specified) J

Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Ets LE Cies Coes Cres Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. Typ. Max. Units Conditions 62 90 IC = 31A 10 15 nC VCC = 400V See Fig. 8 27 40 VGE = 15V 28 TJ = 25C 50 ns IC = 31A, V CC = 480V 1100 1500 VGE = 15V, R G = 10 620 1100 Energy losses include "tail" 1.0 12 mJ See Fig. 9, 10, 11, 14 13 20 29 TJ = 150C, 53 ns IC = 31A, V CC = 480V 1600 VGE = 15V, R G = 10 1200 Energy losses include "tail" 22 mJ See Fig. 10, 14 7.5 nH Measured 5mm from package 1600 VGE = 0V 140 pF VCC = 30V See Fig. 7 20 = 1.0MHz

Notes: Repetitive rating; V GE=20V, pulse width limited by max. junction temperature. ( See fig. 13b ) VCC=80%(V CES), VGE=20V, L=10H, R G= 10, ( See fig. 13a ) Repetitive rating; pulse width limited by maximum junction temperature. Pulse width 80s; duty factor 0.1%. Pulse width 5.0s, single shot.

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IRGBC40S
60
Fo r bo th:

Tria ngu lar w av e:

LO A D C U R R E N T (A )

40
S qu are w ave : 60% of rated voltage

D uty c yc le: 50% T J = 125 C T s in k = 90C G ate d riv e as s pec ified P o w e r D issip a tion = 2 8 W

C lam p voltage: 80% of ra ted

20

Ideal diodes

0 0.1 1 10 100

f, F re quency (kH z)

Fig. 1 - Typical Load Current vs. Frequency

(For square wave, I=I RMS of fundamental; for triangular wave, I=I PK)

1000

1000

I C , Collector-to-E m itter C urrent (A)

IC , C ollector-to-E mitter C urrent (A )

TJ = 25 C TJ = 1 50 C
100

TJ = 25 C
100

TJ = 15 0C

10

10

1 0.1 1

V G E = 15 V 20 s P UL S E W ID TH
10

1 5 10

V C C = 1 00 V 5 s P UL S E W IDTH
15 20

V C E , C o llector-to-Em itter V oltage (V)

V G E , G ate -to-E m itter V olta ge (V )

Fig. 2 - Typical Output Characteristics

Fig. 3 - Typical Transfer Characteristics

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IRGBC40S
70

V G E = 15 V

3.0

M a xim u m D C C o llec to r C urren t (A )

60

V CE , Collector-to-E m itter V oltage (V)

LIMITED BY PACKAGE

VG E = 1 5 V 80 s P UL S E W ID TH I C = 62 A

2.5

50

40

2.0

30

I C = 31 A

20

1.5

10

I C = 1 6A

0 25 50 75 100 1 25 150

1.0 -60 -40 -20 0 20 40 60 80 1 00 120 140 160

T C , C as e T em pe ra ture (C )

TC , C ase Tem perature (C )

Fig. 4 - Maximum Collector Current vs. Case Temperature

Fig. 5 - Collector-to-Emitter Voltage vs. Case Temperature

T herm al Response (Z th JC )

D = 0 .5 0

0.2 0

0.1
0.1 0 0 .05 SIN G LE P UL SE (TH ER MA L R E SP O NS E )
N o te s: 1 . D u ty fa c to r D = t 1 / t 2
PD M

1 t2

0.0 2 0.0 1

0.01 0.00001

2 . P e a k TJ = P D M x Z thJ C + T C

0.0001

0.001

0.01

0.1

10

t 1 , R ectangular Pulse D uration (sec)

Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case

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IRGBC40S
3 0 00

V G E , G ate-to-E mitter V oltage (V )

10 0

V GE = 0V, f = 1MHz C ies = C ge + C gc , Cce SHORTED C res = C gc C oes = C ce + C gc

20

V C E = 40 0 V I C = 3 1A

16

Cies

C , C a pac ita nc e (pF )

2 0 00

12

Coes

1 0 00

Cres

0 1 10

0 0 10 20 30 40 50 60

V C E , C o lle c to r-to -E m itte r V o lta g e (V )

Q g , Total G ate C harge (nC )

Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage

Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage

1 4 .6

1 4 .2

To ta l S w itc hing Lo sse s (m J)

To ta l S w itch in g Losses (m J)

1 4 .4

VC C VG E TC IC

= 4 80 V = 15 V = 25 C = 3 1A

100

R G = 10 V GE = 15 V V CC = 4 80 V

I C = 62 A I C = 31A I C = 1 6A

1 4 .0

10

1 3 .8

1 3 .6

1 3 .4

1 3 .2 0 10 20 30 40 50 60

1 -60 -40 -20 0 20 40 60 80 100 120 140 160

R G , G ate R es istance ( )
W

TC , C ase Tem perature (C )

Fig. 9 - Typical Switching Losses vs. Gate Resistance

Fig. 10 - Typical Switching Losses vs. Case Temperature

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IRGBC40S
50

40

I C , C o lle c to r-to -E m itte r C u rre n t (A )

T o ta l S w itc hin g L o s s e s (m J )

RG TC VCC VGE

= 10 = 1 50C = 48 0V = 1 5V

1000

VG E E 20 V G= T J = 125 C

100

30

S A FE O P E R A TING A R E A

20

10

10

0 0 10 20 30 40 50 60 70

1 1 10 100 1000

I C , C o lle c to r-to -E m itte r C u rre n t (A )

V C E , C o lle cto r-to-E m itte r V olta g e (V )

Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current

Fig. 12 - Turn-Off SOA

Refer to Section D for the following: Appendix C: Section D - page D-5 Fig. 13a - Clamped Inductive Load Test Circuit Fig. 13b - Pulsed Collector Current Test Circuit Fig. 14a - Switching Loss Test Circuit Fig. 14b - Switching Loss Waveform Package Outline 1 - JEDEC Outline TO-220AB Section D - page D-12

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