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Knowing all this, lets plug in the values to the original inequality. 5 vG | 1| 5 1 + vG 4 vG vG 4
(b) The triode region operation is dened as either vDG > |Vtp | or equivalently as vSD < |VOV |. In this case it is easier to work with the former. By denition vDG = vD vG . We can substitute that into our inequality. vD vG > | 1| vD > vG + 1
Note that versus > is not really all that important, since the drain current is a continuous function. (c) Saturation is literally just the opposite of part (b). vD vG + 1
(d) Given ID = 7.5 105 , and knowing what we were told in the problem description we can solve for the value of VOV 7.5 105 = 1 (6 105 )(10)(vOV )2 2
Finding the range of VD is just plugging our VG into part (c) answer vD 3.5 + 1 VD 4.5V (e) The equation for ro = ro =
ro = 666666
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|VA | 1 = ID ||ID
Plugginging in all we know into this equation, its easy to nd the value of ID . The book asks to nd the current at two dierent values of VD For VD = 3 iD =
For VD = 0 iD =
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1 kp (vOV )2 (1 + ||vSD ) 2
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(a) Using the inequality on the formula sheet, we know that the cuto region is vSG < |Vtp |, so therefore it would conduct when vSG |Vtp |. Vtp is given to use as -1V. By denition vSG = vS vG . Its easy to tell that vS = 5V from the circuit diagram in gure E5.7.
Exercise 5.8
+2.5V
RD 0.3mA +0.4V
RS
2.5V
For RD a simple Ohms law calculation will suce. 0.3mA = RD = 2.5 0.4 RD
We can set up the saturation equation to solve for VS . Note that VGS = VS since VG = 0. 0.3mA = 1 (6 105 ) 2 120 3 (VS 1)
(VS 1)2 =
VS =
VS = 1.5V
RS = 3333
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Exercise 5.9
Setting them equal to each other and plugging in known values, we can solve for R. 1 (0.0004) 2 72 18 (0.8 0.5)2 = 1.8 .8 R
R = 13888
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To start, it is useful to note that VD = VG VGD = 0. Since 0 0.5V this transistor is operating in saturation mode.
Exercise 5.10
The left side has the same rail voltage of 1.8V. The problem statement says to operate this new transistor at the edge of saturation, or when VGD = Vtn . Since Vtn = 0.5V this would mean that VGD would have to equal 0.5V as well. Since we know VG = 0.8V, the value of VD = 0.8 0.5 = 0.3V We now have an Ohms law equation governing the resistor. ID = 1.8 .3 R2
We also know that Q2 is identical to Q1 so we can write out the saturation equation for ID .
1.8 .3 72A
R2 = 20833
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ID =
1 (0.0004) 2
72 18
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The right side of this circuit is exactly the same as Excercise 5.9, meaning VD = 0.8V and R = 13888.
Exercise 5.11
Excercise 5.11 asks us to double the resistor value and then nd the values of ID and VD . Note that we are no longer trying to make VD = 0.1V, that was just what they were asking in the example. VOV = VGS Vtn = 5 1 = 4V
First, lets guess that this circuit is operating in saturation mode (just to illustrate what happens when you guess wrong) We can solve for ID using the equation for saturation mode of an NMOSFET ID = 1 1 kn (vOV )2 = (0.001)(4)2 = 8 103 A 2 2
You dont really need to use the inequalities to realize that this is really wrong, but lets do so anyway. VGD = 5 (193.4) = 198.4 1
After you are done with solving a MOSFET circuit at DC, ALWAYS CHECK THE CONDITIONS. If we had gotten 3V for VD it would have still been wrong, but harder to notice. Since our guess of saturation mode was wrong, we need to completely re-do this problem. Start with the triode equation. 1 1 ID = kn vOV vDS vDS = (0.001) 4 VDS VDS 2 2
We dont know VDS yet, but we know another relation to it, Ohms law. ID = 5 VD 24800
1 5 VD (0.001) 4 VD VD = 2 24800
VD = 8.03V OR VD = 0.0502V
Since we get two answers, we get to pick whichever one makes more sense. The second answer makes more sense. VD = 0.0502V
We can nd ID with this equation by plugging this value into the Ohms law equation. ID = 5 0.0502 = .200mA 24800
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Both equations are equal to ID , therefore can both be set equal to each other. Also note that since VS = 0, VDS = VD .
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100.22 4(12.4)(5) 2(12.4) 5
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Example 5.5 is already worked out, giving a resistor value RD = 12400, so the resistor value we need to use is twice that, or RD = 24800
Exercise 5.14
First of all, we need to gure out what mode that the circuit is operating in.
Since the Gate and the Drain are grounded, VDG = 0V. Since 0 < | 0.4|, this is operating in the saturation region. We must use the equation for drain current in the saturation mode. ID = 1 1 kp (vOV )2 = (0.0001) 2 2 10 .18 (.6)2 = 1mA
The resistor has its own Ohms law equation 1mA = 1.8 VS R
We can nd it with the overvoltage and the threshold voltage, both given to us. |VOV | = VSG |Vtp | VSG = .6 + .4 = 1V Since VG = 0, VSG = VS Now lets solve for the resistance. 1mA = 1.8 1 R
R = 800 Boom.
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This is a design problem where they ask you to get the value of a resistor based on a specied overvoltage and threshold voltage, and they give you all of the necessary parameters to solve.
Exercise 5.27
Therefore when you see an amplier problem, always assume its in saturation region when you do DC analysis on it. In this problem there is no need to perform DC analysis at all, since they tell you that its biased at ID = .25mA and has a VOV = .25V. Therefore we can just jump straight into the small signal analysis. Small signal analysis parameters: ro = 50 VA = = 200k ID .00025
gm = kn VOV
Ignore this, I emailed the TA and he said that you can ignore channel length modulation when performing DC analysis on a MOSFET amplier. To solve for gm use the equation gm = gm = 2 0.00025 = 0.002 0.25 2ID VOV
With the small signal parameters, its now time to draw the small signal equivalent circuit.
Rsig RD vsig +
Replace the MOSFET with its equivalent circuit (dont forget the ro )
Rsig vsig +
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gm vgs ro RD 0.002 vgs 200k
G S
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100k G S +
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RL RL 20k 20k 7
2ID Note that in both the textbook and the solutions on Sakai they made an error. They said that gm = VOV , which would only be true if there was no early voltage VA . However the problem statement explicitly states an early voltage.
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This is an amplier problem. All MOSFET ampliers operate in the saturation region. If they didnt they wouldnt be able to nd a linear region of the I-V curve to create amplication.
vsig
0.002 vgs
200k
20k
20k
Some simple observation of the equivalent circuit can allow us to see the value of many variables. Rin = Ro = 1 18.182k 1 1 + 200k 20k
Note that Output resistance does NOT include the load resistance.
The gain without load Avo is found by multiplying the current source with the output resistance. Since the current is going around the opposite way our voltage output is being measured it will be negative. Avo = vout vin = (18.182k)(0.002) 36.4
RL =
Its pretty clear that there is an open circuit between the gate and the source. This means that Rsig really has no eect. Therefore vin = vsig Because of this, Av = Gv .
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100k
Exercise 5.29
The circuit is shown below, with its equivalent circuit shown next to it.
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gm vgs 1 gm + vgs Rsig vsig +
The wording on this problem is a little weird. It tells us that a CG amplier is required to match a signal source with Rsig = 100. I still dont really understand what it is trying to say, but from the solutions manual it basically means that 1 the resistance = Rsig = 100. gm
RD
RD
Rsig vsig + 100 vsig vgs + + gm vgs 100 A 0.01 = 0.05 2 0.20 V 100 1 vsig = vsig 100 + 100 2 vout V = 10 vsig V
We can ll in the resistor values for this circuit, and change it up a little bit, to obtain the following.
Knowing that kn =
Knowing this, and that the circuit operates in saturation mode, we can now solve for the value of ID . ID = 1 1 kn (vOV )2 = (0.05)(0.20)2 = 1mA 2 2
Calculating the voltage gain is simple. First you need to nd vgs in terms of vsig . vgs =
Gv =
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2000 9
Problem 5.79
The rst step in small signal analysis is to nd the DC values and draw the DC equivalent circuit. +15V +15V +15V
10M
7.5k
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3k 10
Lets determine the equivalent bias on the left side. Note that no current goes through the gate of the MOSFET, so all you have to do is voltage divider. VG = 15 5 5 + 10 = 5V
Since this is an amplier circuit, we automatically assume its operating in saturation mode. (a) For part (a) They tell us values of the bias and ask us to verify these values. To do this, we will need to use the saturation equation. ID =
?
1 kn (VOV )2 2
?
0.001 =
1 (0.002)(1)2 2
The more important values we need to check are our biasing. Since the problem states that VGS = 2V, this means that VS = VG VGS = 5 2 = 3V The problem also directly states that VD = 7.5V.
We can perform the Ohms law calculation on each resistor and check that it equals 1mA.
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0.001 =
?
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VA 100 = = 100k ID 0.001
15 7.5 7500
0.001 = 0.001
This means that all the values are consistent and we completed part (a). (b) Part (b) is just plug and chug. gm = kn VOV = 0.002 ro =
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7.5k +5V 3k 0.001 =
?
30 3000
0.001 = 0.001
(c) Part (c) asks us to draw the small signal equivalent circuit.
10M
7.5k
5M
3k
Now we need to replace the MOSFET with its equivalent circuit. While doing this, we can also get rid of the 3k resistor since it is being shorted out by ground, and we can also rearrange the circuit to better understand it. 100k 5M G S
vsig
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gm vgs 100k 11
(d) From the circuit diagram many values can be determined. Rin = 1 = 3.33M 1 1 + 5 10 1 = 6.98k 1 1 + 100 7.5
Ro =
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7.5k 10k
Remember that when drawing a small signal equivalent you short all voltage sources and open circuit all current sources. This means that you have to ground all the rail voltages too.