FDS8884 N-Channel PowerTrench MOSFET

February 2006

FDS8884
N-Channel PowerTrench MOSFET
30V, 8.5A, 23m General Descriptions
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on) and fast switching speed.
A
REE I DF

Features
Max rDS(on) = 23m at VGS = 10V, ID = 8.5A Max rDS(on) = 30m at VGS = 4.5V, ID = 7.5A Low gate charge 100% RG Tested RoHS Compliant

M ENTATIO LE N MP

LE

5 6

4 3 2 1

SO-8

7 8

MOSFET Maximum Ratings

Symbol VDS VGS ID EAS PD TJ, TSTG Drain to Source Voltage Gate to Source Voltage Drain Current Continuous Pulsed

TA = 25C unless otherwise noted Parameter Ratings 30 20 (Note 1a) (Note 2) 8.5 40 32 2.5 20 -55 to 150 Units V V A A mJ W mW/oC
o

Single Pulse Avalanche Energy Power dissipation Derate above 25oC Operating and Storage Temperature

Thermal Characteristics
RJA RJA Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case (Note 1a) (Note 1) 50 25
oC/W o

C/W

Package Marking and Ordering Information

Device Marking FDS8884 Device FDS8884 Package SO-8 Reel Size 330mm Tape Width 12mm Quantity 2500 units

2006 Fairchild Semiconductor Corporation FDS8884 Rev. A

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FDS8884 N-Channel PowerTrench MOSFET

Electrical Characteristics TJ = 25C unless otherwise noted

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics
BVDSS BVDSS TJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = 250A, VGS = 0V ID = 250A, referenced to 25oC VDS = 24V VGS = 0V VGS = 20V TJ = 125oC 30 23 1 250 100 V mV/oC A nA

On Characteristics (Note 3)
VGS(th) VGS(th) TJ rDS(on) Gate to Source Threshold Voltage Gate to Source Threshold Voltage Temperature Coefficient Drain to Source On Resistance VGS = VDS, ID = 250A ID = 250A, referenced to 25oC VGS = 10V, ID = 8.5A, VGS = 4.5V , ID = 7.5A, VGS = 10V, ID = 8.5A, TJ = 125oC 1.2 1.7 -4.9 19 23 26 23 30 32 m 2.5 V mV/oC

Dynamic Characteristics
Ciss Coss Crss RG Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance VDS = 15V, VGS = 0V, f = 1MHz f = 1MHz 475 100 65 0.9 635 135 100 1.6 pF pF pF

Switching Characteristics (Note 3)

td(on) tr td(off) tf Qg Qg Qgs Qgd Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Total Gate Charge Gate to Source Gate Charge Gate to Drain Charge VDS = 15V, VGS = 10V ID = 8.5A VDS = 15V, VGS = 5V ID = 8.5A VDD = 15V, ID = 8.5A VGS = 10V, RGS = 33 5 9 42 21 9.2 5.0 1.5 2.0 10 18 68 34 13 7 ns ns ns ns nC nC nC nC

Drain-Source Diode Characteristics

VSD trr Qrr Source to Drain Diode Voltage Reverse Recovery Time Reverse Recovery Charge ISD = 8.5A ISD = 2.1A IF = 8.5A, di/dt = 100A/s 0.9 0.8 1.25 1.0 33 20 V V ns nC

Notes: 1: RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the users board design.

a) 50C/W when mounted on a 1 in2 pad of 2 oz copper

b) 105C/W when mounted on a .04 in2 pad of 2 oz copper

c) 125C/W when mounted on a minimun pad

Scale 1 : 1 on letter size paper

2: Starting TJ = 25C, L = 1mH, IAS = 8A, VDD = 27V, VGS = 10V. 3: Pulse Test:Pulse Width <300s, Duty Cycle <2%.

2 FDS8884 Rev. A

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FDS8884 N-Channel PowerTrench MOSFET

Typical Characteristics TJ = 25C unless otherwise noted

PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX VGS = 10V VGS = 5.0V VGS = 4.5V VGS = 4.0V VGS = 3.5V

NORMALIZED DRAIN TO SOURCE ON-RESISTANCE

40
ID, DRAIN CURRENT (A)

3.0 2.5 2.0

VGS = 3V VGS = 3.5V

PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX

30

20

VGS = 4V VGS = 4.5V

1.5 1.0
VGS = 5V VGS = 10V

10

VGS = 3V

0 0.0

0.5 1.0 1.5 2.0 2.5 3.0 3.5 VDS, DRAIN TO SOURCE VOLTAGE (V)

4.0

0.5

10

15 20 25 30 ID, DRAIN CURRENT(A)

35

40

Figure 1. On Region Characteristics

Figure 2. Normalized On-Resistance vs Drain current and Gate Voltage

60
rDS(ON), DRAIN TO SOURCE ON-RESISTANCE (m)

NORMALIZED DRAIN TO SOURCE ON-RESISTANCE

1.6 1.4 1.2 1.0 0.8 0.6 -80

ID = 8.5A VGS = 10V

55 50 45 40 35 30 25 20 15 2

ID = 8.5A

PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX

TJ = 150oC

TJ = 25oC

-40

40

80

120

160

TJ, JUNCTION TEMPERATURE (oC)

4 6 8 VGS, GATE TO SOURCE VOLTAGE (V)

10

Figure 3. Normalized On Resistance vs Junction Temperature

40 ID, DRAIN CURRENT (A) 35 30 25 20 15 10 5 0 1
TJ = -55oC TJ = 150oC

Figure 4. On-Resistance vs Gate to Source Voltage

40 IS, REVERSE DRAIN CURRENT (A)

PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX

VDD = 5V TJ = 25oC

10

VGS = 0V

TA = 150oC

TJ = 25oC

0.1
TJ = -55oC

0.01

2 3 4 VGS, GATE TO SOURCE VOLTAGE (V)

1E-3 0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

VSD, BODY DIODE FORWARD VOLTAGE (V)

Figure 5. Transfer Characteristics

Figure 6. Source to Drain Diode Forward Voltage vs Source Current

3 FDS8884 Rev. A

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Typical Characteristics TJ = 25C unless otherwise noted

VGS, GATE TO SOURCE VOLTAGE(V)

FDS8884 N-Channel PowerTrench MOSFET

10 8 6 4 2 0
VDD = 10V VDD = 15V

700 600
CAPACITANCE (pF)
Ciss
f = 1MHz VGS = 0V

500 400 300 200 100

VDD = 20V

Coss

Crss

10

0.1

Qg, GATE CHARGE(nC)

1 10 VDS, DRAIN TO SOURCE VOLTAGE (V)

30

Figure 7. Gate Charge Characteristics

20
IAS, AVALANCHE CURRENT(A)

Figure 8. Capacitance vs Drain to Source Voltage

9 8
ID, DRAIN CURRENT (A)
VGS = 10V

10
STARTING TJ = 25oC

7 6 5 4 3 2 1
RJA = 50oC/W VGS = 4.5V

STARTING TJ = 125oC

1 0.01

0.1 1 tAV, TIME IN AVALANCHE(ms)

10

20

0 25

50

75

100

125

150

TA, AMBIENT TEMPERATURE(oC)

Figure 9. Unclamped Inductive Switching Capability

100
ID, DRAIN CURRENT (A)
10us

Figure 10. Maximum Continuous Drain Current vs Ambient Temperature

P(PK), PEAK TRANSIENT POWER (W)

2000 1000

TA = 25oC FOR TEMPERATURES ABOVE 25oC DERATE PEAK CURRENT AS FOLLOWS:

10
100us

100

I = I25

1
OPERATION IN THIS AREA MAY BE LIMITED BY rDS(on) SINGLE PULSE TJ = MAX RATED
TA = 25 C
o

1ms 10ms 100ms 1s DC

VGS=10V

150 T A ----------------------125

0.1

10
SINGLE PULSE

0.01 0.1

1 10 VDS, DRAIN TO SOURCE VOLTAGE (V)

100

1 -5 10

10

-4

10

-3

10 10 10 t, PULSE WIDTH (s)

-2

-1

10

10

Figure 11. Forward Bias Safe Operating Area

Figure 12. Single Pulse Maximum Power Dissipation

4 FDS8884 Rev. A

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FDS8884 N-Channel PowerTrench MOSFET

Typical Characteristics TJ = 25C unless otherwise noted

2

1
NORMALIZED THERMAL IMPEDANCE, ZJA

DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01

0.1

PDM

0.01
SINGLE PULSE

t1 t2

1E-3 -5 10

NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJA x RJA + TA

10

-4

10

-3

10

-2

10

-1

10

10

10

10

t, RECTANGULAR PULSE DURATION(s)

Figure 13. Transient Thermal Response Curve

5 FDS8884 Rev. A

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FDS8884 N-Channel PowerTrench MOSFET

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PRODUCT STATUS DEFINITIONS Definition of Terms

Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Rev. I18

Preliminary

No Identification Needed

Full Production

Obsolete

Not In Production

FDS8884 Rev. A

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