2N4401

New Product

Vishay Semiconductors
formerly General Semiconductor

Small Signal Transistor (NPN)

TO-226AA (TO-92)
0.181 (4.6) min. 0.492 (12.5) 0.181 (4.6) 0.142 (3.6)

Features
NPN Silicon Epitaxial Transistor for switching and amplifier applications. As complementary type, the PNP transistor 2N4403 is recommended. On special request, this transistor is also manufactured in the pin configuration TO-18. This transistor is also available in the SOT-23 case with the type designation MMBT4401,

Mechanical Data
Case: TO-92 Plastic Package Weight: approx. 0.18g Packaging Codes/Options: E6/Bulk 5K per container, 20K/box E7/4K per Ammo mag., 20K/box

max. 0.022 (0.55) 0.098 (2.5)

Dimensions in inches and (millimeters)

Bottom View

Maximum Ratings & Thermal Characteristics

Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Power Dissipation at TA = 25C Derate above 25C Power Dissipation at TC = 25C Derate above 25C Thermal Resistance Junction to Ambient Air Thermal Resistance Junction to Case Junction Temperature Storage Temperature Range Symbol VCEO VCBO VEBO IC Ptot Ptot RJA RJC Tj TS

Ratings at 25C ambient temperature unless otherwise specified.

Value 40 60 6.0 600 625 5.0 1.5 12 200 83.3 150 55 to +150

Unit V V V mA mW mW/C mW mW/C C/W C/W C C

Document Number 88117 08-May-02

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2N4401
Vishay Semiconductors
formerly General Semiconductor

Electrical Characteristics (T
Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Base Cutoff Current
(1)

= 25C unless otherwise noted)

Symbol V(BR)CBO V(BR)CEO V(BR)EBO VCEsat VBEsat ICEV IBEV

Test Condition IC = 0.1 mA, IE = 0 IC = 1 mA, IB = 0 IE = 0.1 mA, IC = 0 IC = 150 mA, IB = 15 mA IC = 500 mA, IB = 50 mA IC = 150 mA, IB = 15 mA IC = 500 mA, IB = 50 mA VEB = 0.4 V, VCE = 35 V VEB = 0.4 V, VCE = 35 V VCE = 1 V, IC = 0.1 mA VCE = 1 V, IC = 1 mA VCE = 1 V, IC = 10 mA VCE = 1 V, IC = 150 mA VCE = 2 V, IC = 500 mA VCE = 10 V, IC = 1 mA f = 1 kHz VCE = 10 V, IC = 1 mA f = 1 kHz VCE = 5 V, IC = 20 mA f = 100 MHz VCB = 5 V, IE = 0, f = 1.0 MHz VCB = 0.5 V, I C = 0, f = 1.0 MHz VCE = 10 V, I C = 1 mA, f = 1 kHz VCE = 10 V, I C = 1 mA, f = 1 kHz

Min 60 40 6.0 0.75 20 40 80 100 40 1.0 0.1 10-4 250 40 1.0

Typ

Max 0.40 0.75 0.95 1.20 100 100 300 15 8 10-4 6.5 30 500 30

Unit V V V V V nA nA

DC Current Gain

hFE

Input Impedance Voltage Feedback Ratio Current Gain-Bandwidth Product Collector-Base Capacitance Emitter-Base Capacitance Small Signal Current Gain Output Admittance

hie hre fT CCBO CEBO hfe hoe

k MHz pF pF S

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Document Number 88117 08-May-02

2N4401
Vishay Semiconductors
formerly General Semiconductor

Electrical Characteristics (T
Parameter Delay Time (see fig. 1) Rise Time (see fig. 1) Storage Time (see fig. 2) Fall Time (see fig. 2)

= 25C unless otherwise noted)

Symbol td tr ts tf

Test Condition I C = 150 mA, IB1 = 15 mA VCC = 30 V, VBE = 2.0 mA I C = 150 mA, IB1 = 15 mA VCC = 30 V, VBE = 2.0 mA IB1 = IB2 = 15 mA VCC = 30 V, IC = 150 mA IB1 = IB2 = 15 mA VCC = 30 V, IC = 150 mA

Min

Typ

Max 15 20 225 30

Unit ns ns ns ns

Switching Time Equivalent Test Circuit

Figure 1 - Turn-ON Time
1.0 to 100 s, DUTY CYCLE 2% +16 V 0 -2 V < 2 ns 1k C S* < 10 pF +30V 200

Figure 2 - Turn-OFF Time

1.0 to 100 s, DUTY CYCLE 2% +16 V 0 -14 V
Scope rise time < 4ns *Total shunt capacitance of test jig, connectors and oscilloscope

+30V 200

1k < 20 ns -4 V

C S* < 10 pF

Document Number 88117 08-May-02

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This datasheet has been download from: www.datasheetcatalog.com Datasheets for electronics components.