Test - 1 OF 2 1.

) The region that is very thin and lightly doped compared to the collector and emitter region. a. base b. collector c. emitter d. active region 2.) The current in BJT consists of both free electrons and holes. a. Unipolar b. Bipolar c. Tripolar d. IE 3.) In cutoff, VCE is a. 0V b. equal to Vcc c. maximum d. b and c 4.) In saturation, VCE is a. 0.7V b. equal to Vcc c. minimum d. maximum 5.) To saturate a BJT, a. IB = IC(sat) b. IB > IC(sat)/DC c. Vcc must be at least 0V d. emitter must be grounded 6.) The bias condition of a transistor to be used as a linear amplifier is called a. Forward bias b. forward-forward c. reverse-reverse d. collector bias 7.) The DC of a transistor is its a. current gain b. voltage gain c. power gain d. internal resistance 8.) The emitter current is always a. greater than the base b. less than the collector current c. greater than the collector current d. answer a and c 9.) If IC is 5 times larger than IB, then DC is a. 0.02 b. 100 c.50 d.500 10.) The approximate voltages across the forward-biased base-emitter junction of silicon BJT is a. 0V b.0.7V c.0.3V d.VBB 11.) Once in saturation, a further increase in base current will a. cause the collector current to increase b. not affect the collector current c. cause collector current to decrease d. turn the transistor off 12.) If the base-emitter junction is open, the collector voltage is a. Vcc b.0.V c. floating d.0.2V 13.) The largest in the three semiconductor region in BJT a. base b. collector c. emitter d. active region 14.) Characterized by a straight-line relationship a. Gain b. straight line c. parallel d. linear 15.) The state of a BJT in which the collector current has reached a maximum and is independent of the base current.

a. Cut-off b. Active c. Saturation d. answer a and c 16.) Transistor can be operated as an electronic switch in a. Cut-off b. Active c. Saturation d. answer a and c 17.) The necessary application of a dc voltage to a transistor or other device to produce a desired mode of operations a. Amplification c. Bias c. Switching d. Floating For item 18-20

FIGURE 1 18.) If the transistor in Figure 1 is open from collector to emitter, the voltage across the Rc will a. increase b. decrease c. not change d. will be 0 19.) If the transistor in Figure 1 is open from collector to emitter, the collector voltage will a. increase b. decrease c. not change d. will be 0 20.) If the resistor in Figure 1 is open, the transistor collector voltage will a. increase b. decrease c. not change d. will be 0

TEST II: 1) If the emitter current of a transistor is 8 mA and the IB is 1/100 of IC, determine the levels of IC and IB. 2) Determine the saturation current (ICsat) of the network

3) Using the characteristics of the Figure 3, determine the following for emitterbias configuration if Q-point is defined at ICQ= 4mA and VCEQ=10V a. Rc if Vcc =24V and RE = 1.2k b. at the operating point c. RB d. Power dissipated by the transistor e. Power dissipated by the resistor RC

4) Given the information provided in Figure 4, determine: a. b. Vcc c. RB

5) Given the information appearing in the Figure, solve for the following: a. IC b. VE c. VCC d. VCE e. VB f. R1