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  • Power Amp 100W With V

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    mihai9191
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    Power amp 100w with v-mosfet one still designing that it uses in the exit transistor of technology v-fet. This transistors to us offer a lot of virtues concerning the simple bipolar transistors, as high speeds, thermic stability, low distortion etc. Beyond this circuit use also other useful solutions as use fet as source of current [ Q3 ], trimmer TR1 with which we match the characteristics of differential amplifier of entry Q1-2. Also extensive is the use

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    Power amp 100w with v-mosfet one still designing that it uses in the exit transistor of technology v-fet. This transistors to us offer a lot of virtues concerning the simple bipolar transistors, as high speeds, thermic stability, low distortion etc. Beyond this circuit use also other useful solutions as use fet as source of current [ Q3 ], trimmer TR1 with which we match the characteristics of differential amplifier of entry Q1-2. Also extensive is the use

    Drepturi de autor:

    Attribution Non-Commercial (BY-NC)
    Descărcați ca DOC, PDF, TXT sau citiți online pe Scribd
    Indicator pentru conținut neadecvat
    135 vizualizări2 pagini

    Power Amp 100W With V

    Încărcat de

    mihai9191
    Power amp 100w with v-mosfet one still designing that it uses in the exit transistor of technology v-fet. This transistors to us offer a lot of virtues concerning the simple bipolar transistors, as high speeds, thermic stability, low distortion etc. Beyond this circuit use also other useful solutions as use fet as source of current [ Q3 ], trimmer TR1 with which we match the characteristics of differential amplifier of entry Q1-2. Also extensive is the use

    Drepturi de autor:

    Attribution Non-Commercial (BY-NC)
    Descărcați ca DOC, PDF, TXT sau citiți online pe Scribd
    Indicator pentru conținut neadecvat
    din 2

    Power amp 100W with V-MosFet [1]

    V-MOSFET.
    , , ,
    . fet
    [Q3], trimmer TR1 Q1-2.
    Wilson Q7-8 Q10-11 . trimmer TR2
    100 ma . D2 D5 R17-19 ,
    V-FET 14V
    SiO2 , .
    . 32.6 ,
    R18, R6 R8, .
    . V-FET ,
    .
    , .
    , .
    L. Hood Wireless Word .

    One still designing that it uses in the exit transistor of technology V-mosfet. This transistors to us offer a lot of
    virtues concerning the simple bipolar transistors, as high speeds, thermic stability, low distortion etc. Beyond this circuit
    use also other useful solutions as use fet as source of current [ Q3 ], trimmer TR1 with which we match the
    characteristics of differential amplifier of entry Q1-2. Also extensive is the use of sources of current wilson Q7-8 and
    Q10-11. With trimmer TR2 regulate the bias current of output stage, in the 100 ma. The use of diodes D2 until D5 in
    combination with the resistances R17-19, they protect the gates of transistors v-fet from exceeds the voltage 14V
    and it creates perforation in very thin layer SiO2, that is used as insulation in the gate. This way of protection is
    common in all the amplifiers that use these transistors. The total gain of amplifier is 32.6, regulated from the R18, R6
    and R8, in the negative feedback. Also is used enough the use of local feedback for stabilisation of operation under all
    the conditions. Because the transistors v-fet have positive factor of temperature, with result with the increase of
    temperature is increased also their resistance. This increase has as result the reduction of current that via the
    transistor, hence also his power. The use of separated supply in the stages of drive and exit, ensures stability and reject
    of distortion of intermodulation. The initial drawing of is L. Hood and was published by the Wireless Word.

    Power supply for 100W amp [1]

    , POWER VMOS FET


    [2SK134 or 2SK135] [2SJ49 or 2SJ50], , Toshiba
    . [2SK1530 N-FET 2SK135] [2SJ201 P-FET
    2SJ50]. -3 TO-3 ,
    . ,
    .
    .

    A branding that I want to make, that is in effect for all the amplifiers that I publish and use the POWER VMOS FET of series [ 2SK134 or
    2SK135 ] [ 2SJ49 or 2SJ50 ], they are that, more above transistor they are not produced more by the Toshiba and are enough difficult
    they are found henceforth. They can be replaced with [ 2SK1530 in the place of 2SK135 ] and [ 2SJ201 in the place of 2SJ50 ]. The new
    transistors are in plastic case -3 and no TO-3, bear in bigger supply of operation and have positive factor of temperature. This mean
    that with the increase of temperature, is increased and the current that is gone through from through the transistor. The new transistors
    him I have still not tryed and me it would interest to learn if somebody him used also with which results.

    http://doc.semicon.toshiba.co.jp/pdf_e/docweb123/e001355.pdf

    Dataseets for 2SK1530

    http://doc.semicon.toshiba.co.jp/pdf_e/docweb123/e001264.pdf

    Dataseets for 2SJ201

    R1=27K
    R2-11=4.7K
    R3-4=5.6K
    R5=47K
    R6=1K
    R7-10-21=22K
    R8=12
    R9=1M
    R12=33
    R13-20=82
    R14=33
    R15=2.7K
    R16=270
    R17-19=680
    R18=33K
    R22-23=0.33 5W

    R24=8.2
    R25=10 1W
    TR1=470 trimmer
    TR2=4.7K trimmer
    C1=1F 63V mkt
    C2=1nF 100V*
    C3=100F 16V
    C4=100nF 100V*
    C5-7=22F 16V
    C6=4.7pF ceramic
    C8=47F 16V
    C9=1nF 100V*
    C10-11=100F 100V
    C12-14=100nF 250V mkt
    C13=150nF 100V mkt
    C15=100F 35V

    D1=12V 0.5W Zener


    D2.....5=8.2V 1W Zener
    L1=20 turns 0.6mm on R25
    Q1-2=BC 547
    Q3=2N5460 fet
    Q4-5=MPSA93
    Q6-8-11=BC182
    Q7-10=MPSA43
    Q9=BC212
    Q12=2SK134 or 2SK135
    Q13=2SJ49 or 2SJ50
    *polyester or mylar

    Sam Electronic Circuits 12/01


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