2SD2638

TOSHIBA Transistor Silicon NPN Triple Diffused Mesa Type

2SD2638
Horizontal Deflection Output for Color TV, Digital TV. High Speed Switching Applications.
High voltage: VCBO = 1700 V Low saturation voltage: VCE (sat) = 5 V (max) High speed: tf = 0.8 s (max) Unit: mm

Maximum Ratings (Tc = 25C)

Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range DC Pulse Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Rating 1700 750 5 7 14 3.5 50 150 -55~150 Unit V V V A A W C C

JEDEC JEITA TOSHIBA

2-16E3A

Equivalent Circuit
1. Base 50 W (typ.)

2. Collector

Weight: 5.5 g (typ.)

3. Emitter

Electrical Characteristics (Tc = 25C)

Characteristics Collector cut-off current Emitter cut-off current Emitter-base breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Forward voltage (damper diode) Transition frequency Collector output capacitance Switching time Storage time Fall time Symbol ICBO IEBO V (BR) EBO hFE (1) hFE (2) VCE (sat) VBE (sat) VF fT Cob tstg tf Test Condition VCB = 1700 V, IE = 0 VEB = 5 V, IC = 0 IE = 400 mA, IC = 0 VCE = 5 V, IC = 1 A VCE = 5 V, IC = 5.5 A IC = 5.5 A, IB = 1.2 A IC = 5.5 A, IB = 1.2 A IF = 7 A VCE = 10 V, IC = 0.1 A VCB = 10 V, IE = 0, f = 1 MHz ICP = 5.5 A, IB1 (end) = 1.1 A, fH = 15.75 kHz Min 66 5 8 4.5 Typ. 1.0 1.3 2 125 7 0.4 Max 1 200 25 7.5 5 1.5 2 9 0.8 V V V MHz pF ms Unit mA mA V

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2SD2638

IC VCE
10 Common emitter Tc = 25C 8 1.4 1.6 1.8 2

(A)

Collector current

1.2 1.0 0.8 0.6 0.4 0.2

IC

IB = 0.1 A

0 0

10

Collector-emitter voltage

VCE

(V)

hFE IC
300 Common emitter VCE = 5 V

hFE DC current gain

100

30 Tc = 100C 10 25 -25

1 0.01

0.03

0.1

0.3

10

30

Collector current

IC

(A)

IC VBE
10 Common emitter VCE = 5 V 10

IF VF
(A)
Open base 8

(A)

Collector current

Instantaneous forward current

IC

IF

2 Tc = 100C 0 0 25 -25

Tc = 100C

-25

0.2

0.4

0.6

0.8

1.2

0 0

25 0.4 0.8 1.2 1.6 2

Base-emitter voltage VBE

(V)

Instantaneous forward voltage VF

(V)

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2SD2638

VCE IB
10 10

VCE (sat) IC
Collector emitter saturation voltage VCE (sat) (V)
Common emitter Tc = -25C Common emitter Tc = -25C 8 6

(V)

5 3

Collector emitter voltage VCE

1 0.5 0.3

IC/IB = 2 0.1 0.05 0.2

2 3 0 0 3.5 4 4.5 5

IC = 5.5 A

10

30

50

100

0.4

0.8

1.2

1.6

2.4

Collector current

Base current

IB

(A)

IC

(A)

VCE IB
10 10

VCE (sat) IC
Collector emitter saturation voltage VCE (sat) (V)
Common emitter Tc = 25C 5 3 Common emitter Tc = 25C 8

(V)

Collector emitter voltage VCE

1 0.5 0.3

3.5 4.5

IC/IB = 2 0.1 0.05 0.2

2 3 0 0 4 5 IC = 5.5 A

10

30

50

100

0.4

0.8

1.2

1.6

2.4

Collector current

Base current

IB

(A)

IC

(A)

VCE IB
10

VCE (sat) IC
Common emitter Tc = 100C 10 Common emitter Tc = 100C 8

(V)

Collector emitter saturation voltage VCE (sat) (V)

5 3

Collector emitter voltage VCE

1 0.5 0.3

4 3.5

IC/IB = 2 0.1 0.05 0.2

2 3 0 0 4 4.5 5 IC = 5.5 A

0.4

0.8

1.2

1.6

2.4

10

30

50

100

Base current

IB

(A)

Collector current

IC

(A)

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2SD2638

rth (j-c) tw
Transient thermal impedance (junction-case) rth (j-c) (C/W)
10

0.1

0.01 Tc = 25C (infinite heat sink) Curves should be applied in thermal limited area. (single nonrepetitive pulse) 0.001 10 m 100 m 1m 10 m 100 m 1 10 100 1000

Pulse width

tw

(s)

Safe Operating Area

100 100 IC max (pulsed)* 100 ms* 1 ms* 10 10 ms*

PC Tc
(W)
Infinite heat sink 80

Cllector power dissipation PC

60

(A)

IC

IC max (continuous)

10 ms*

40

Collector current

DC operation Tc = 25C

100 ms*

20

0 0 0.1

25

50

75

100

125

150

175

Case temperature Tc
*: Single nonrepetitive pulse Tc = 25C Curves must be derated linearly with increase in temperature.

(C)

VCEO max 100 1000

0.01 1

10

Collector-emitter voltage

VCE

(V)

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2SD2638

RESTRICTIONS ON PRODUCT USE

000707EAA

TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the Handling Guide for Semiconductor Devices, or TOSHIBA Semiconductor Reliability Handbook etc.. The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (Unintended Usage). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customers own risk. The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. The information contained herein is subject to change without notice.

2001-11-27

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