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HEXFET
Power MOSFET
3/30/01
Parameter Typ. Max. Units
R
JC
Junction-to-Case 0.60
R
CS
Case-to-Sink, Flat, Greased Surface 0.24 C/W
R
JA
Junction-to-Ambient 40
Thermal Resistance
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V
DSS
= 60V
R
DS(on)
= 5.5m
I
D
= 130AC
S
D
G
Advanced HEXFET
t
on
Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Source-Drain Ratings and Characteristics
130C
520
A
C Starting T
J
= 25C, L = 260H
R
G
= 25, I
AS
= 50A. (See Figure 12)
C Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11)
Notes:
C I
SD
130A, di/dt 230A/s, V
DD
V
(BR)DSS
,
T
J
175C
Pulse width 400s; duty cycle 2%.
This is a typical value at device destruction and represents
operation outside rated limits.
1 This is a calculated value limited to T
J
= 175C .
C Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 90A.
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage 60 V V
GS
= 0V, I
D
= 250A
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient 0.067 V/C Reference to 25C, I
D
= 1mA
R
DS(on)
Static Drain-to-Source On-Resistance 5.5 m V
GS
= 10V, I
D
= 78A
V
GS(th)
Gate Threshold Voltage 2.0 4.0 V V
DS
= V
GS
, I
D
= 250A
g
fs
Forward Transconductance 88 S V
DS
= 25V, I
D
= 78A
25
A
V
DS
= 60V, V
GS
= 0V
250 V
DS
= 48V, V
GS
= 0V, T
J
= 150C
Gate-to-Source Forward Leakage 100 V
GS
= 20V
Gate-to-Source Reverse Leakage -100
nA
V
GS
= -20V
Q
g
Total Gate Charge 260 I
D
= 130A
Q
gs
Gate-to-Source Charge 68 nC V
DS
= 48V
Q
gd
Gate-to-Drain ("Miller") Charge 94 V
GS
= 10V, See Fig. 6 and 13
t
d(on)
Turn-On Delay Time 26 V
DD
= 30V
t
r
Rise Time 200 I
D
= 130A
t
d(off)
Turn-Off Delay Time 100 R
G
= 4.3
t
f
Fall Time 150 V
GS
= 10V, See Fig. 10
Between lead,
6mm (0.25in.)
from package
and center of die contact
C
iss
Input Capacitance 6760 V
GS
= 0V
C
oss
Output Capacitance 1330 V
DS
= 25V
C
rss
Reverse Transfer Capacitance 290 pF = 1.0MHz, See Fig. 5
E
AS
Single Pulse Avalanche EnergyC 18803101 mJ I
AS
= 130A, L = 37H
nH
Electrical Characteristics @ T
J
= 25C (unless otherwise specified)
L
D
Internal Drain Inductance
L
S
Internal Source Inductance
S
D
G
I
GSS
ns
5.0
13
I
DSS
Drain-to-Source Leakage Current
IRFP064V
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Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Output Characteristics Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
1
10
100
1000
0.1 1 10 100
20s PULSE WIDTH
T = 25 C J
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
V , Drain-to-Source Voltage (V)
I
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
DS
D 4.5V
1
10
100
1000
0.1 1 10 100
20s PULSE WIDTH
T = 175 C J
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
V , Drain-to-Source Voltage (V)
I
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
DS
D
4.5V
1
10
100
1000
4.0 5.0 6.0 7.0 8.0 9.0 10.0
V = 50V
20s PULSE WIDTH
DS
V , Gate-to-Source Voltage (V)
I
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
GS
D
T = 25 C
J
T = 175 C
J
V =
I =
GS
D
10V
70A
IRFP064V
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Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
0 50 100 150 200 250 300
0
4
8
12
16
20
Q , Total Gate Charge (nC)
V
,
G
a
t
e
-
t
o
-
S
o
u
r
c
e
V
o
l
t
a
g
e
(
V
)
G
G
S
FOR TEST CIRCUIT
SEE FIGURE
I = D
13
130A
V = 30V
DS
V = 48V
DS
0.1
1
10
100
1000
0.0 0.4 0.8 1.2 1.6 2.0 2.4
V ,Source-to-Drain Voltage (V)
I
,
R
e
v
e
r
s
e
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
SD
S
D
V = 0 V
GS
T = 25 C
J
T = 175 C
J
1 10 100
V
DS
, Drain-to-Source Voltage (V)
0
2000
4000
6000
8000
10000
12000
C
,
C
a
p
a
c
i
t
a
n
c
e
(
p
F
)
Coss
Crss
Ciss
V
GS
= 0V, f = 1 MHZ
C
iss
= C
gs
+ C
gd
, C
ds
SHORTED
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
1 10 100 1000
V
DS
, Drain-toSource Voltage (V)
1
10
100
1000
10000
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
Tc = 25C
Tj = 175C
Single Pulse
1msec
10msec
OPERATION IN THIS AREA
LIMITED BY R
DS
(on)
100sec
IRFP064V
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Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 9. Maximum Drain Current Vs.
Case Temperature
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1
Notes:
1. Duty factor D = t / t
2. Peak T =P x Z + T
1 2
J DM thJC C
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
T
h
e
r
m
a
l
R
e
s
p
o
n
s
e
(
Z
)
1
t
h
J
C
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
25 50 75 100 125 150 175
0
20
40
60
80
100
120
140
T , Case Temperature ( C)
I
,
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
C
D
LIMITED BY PACKAGE
V
DS
90%
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
V
DS
Pulse Width 1 s
Duty Factor 0.1 %
R
D
V
GS
R
G
D.U.T.
V
GS
+
-
V
DD
Fig 10a. Switching Time Test Circuit
Fig 10b. Switching Time Waveforms
IRFP064V
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Q
G
Q
GS
Q
GD
V
G
Charge
D.U.T.
V
DS
I
D
I
G
3mA
V
GS
.3F
50K
.2F
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
V
GS
Fig 13b. Gate Charge Test Circuit Fig 13a. Basic Gate Charge Waveform
Fig 12b. Unclamped Inductive Waveforms
Fig 12a. Unclamped Inductive Test Circuit
t
p
V
(BR)DSS
I
AS
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
R
G
I
AS
0.01 t
p
D.U.T
L
V
DS
+
-
V
D D
DRIVER
A
1 5V
20V
25 50 75 100 125 150 175
0
150
300
450
600
Starting T , Junction Temperature ( C)
E
,
S
i
n
g
l
e
P
u
l
s
e
A
v
a
l
a
n
c
h
e
E
n
e
r
g
y
(
m
J
)
J
A
S
I
D
TOP
BOTTOM
53A
92A
130A
IRFP064V
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Peak Diode Recovery dv/dt Test Circuit
P.W.
Period
di/dt
Diode Recovery
dv/dt
Ripple 5%
Body Diode Forward Drop
Re-Applied
Voltage
Reverse
Recovery
Current
Body Diode Forward
Current
V
GS
=10V
V
DD
I
SD
Driver Gate Drive
D.U.T. I
SD
Waveform
D.U.T. V
DS
Waveform
Inductor Curent
D =
P.W.
Period
+
-
+
+
+ -
-
-
C
C
R
G
V
DD
dv/dt controlled by R
G
I
SD
controlled by Duty Factor "D"
D.U.T. - Device Under Test
D.U.T*
Circuit Layout Considerations
Low Stray Inductance
Ground Plane
Low Leakage Inductance
Current Transformer
C
* Reverse Polarity of D.U.T for P-Channel
V
GS
[ ]
[ ]
*** V
GS
= 5.0V for Logic Level and 3V Drive Devices
[ ] ***
Fig 14. For N-channel HEXFET
power MOSFETs
IRFP064V
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Data and specifications subject to change without notice.
This product has been designed and qualified for the Automotive [Q101] market.
Qualification Standards can be found on IRs Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 3/01
TO-247AC Part Marking Information
TO-247AC Package Outline
Dimensions are shown in millimeters (inches)
LEAD AS SIGN MENTS
NOTES:
- D -
5.30 (.209)
4.70 (.185)
2.50 (.089)
1.50 (.059)
4
3X
0.80 (. 031)
0.40 (. 016)
2.60 (.102)
2.20 (.087)
3.40 (.133)
3.00 (.118)
3X
0.25 (.010) M C A S
4.30 (.170)
3.70 (.145)
- C -
2X
5. 50 (.217)
4. 50 (.177)
5.50 (.217)
0.25 (.010)
1.40 (.056)
1.00 (.039)
3.65 (.143)
3.55 (.140)
D M M B
- A -
15.90 (.626)
15.30 (.602)
- B -
1 2 3
20.30 (.800)
19.70 (.775)
14.80 (.583)
14.20 (.559)
2.40 (.094)
2.00 (.079)
2X
2X
5.45 (.215)
1 DIMENSIONING & TOLER AN CING
PER ANSI Y14.5M, 1982.
2 CONTR OLLING DIMENSION : INCH.
3 CONF ORMS TO JEDEC OUTLINE
TO- 247- AC .
1 - GATE
2 - DR AIN
3 - SOUR CE
4 - DR AIN
INTERNATIONAL
RECTIFIER
LOGO
ASSEMBLY
LOT CODE
EXAMPLE : THIS IS AN IRFPE30
WITH ASSEMBLY
LOT CODE 3A1Q
PART NUMBER
DATE CODE
(YYWW)
YY = YEAR
WW WEEK
3A1Q 9302
IRFPE30
A
This datasheet has been download from:
www.datasheetcatalog.com
Datasheets for electronics components.