INTEGRATED CIRCUITS

DATA SHEET

TDA1563Q 2 25 W high efficiency car radio power amplifier

Product specication Supersedes data of 1998 Jul 14 File under Integrated Circuits, IC01 2000 Feb 09

Philips Semiconductors

Product specication

2 25 W high efciency car radio power amplier

FEATURES Low dissipation due to switching from Single-Ended (SE) to Bridge-Tied Load (BTL) mode Differential inputs with high Common Mode Rejection Ratio (CMRR) Mute/standby/operating (mode select pin) Zero crossing mute circuit Load dump protection circuit Short-circuit safe to ground, to supply voltage and across load Loudspeaker protection circuit Device switches to SE operation at excessive junction temperatures Thermal protection at high junction temperature (170C) Diagnostic information (clip detection and protection/temperature) Clipping information can be selected between THD = 2.5% or 10% QUICK REFERENCE DATA SYMBOL VP PARAMETER supply voltage CONDITIONS DC biased non-operating load dump IORM Iq(tot) Istb Zi Po repetitive peak output current total quiescent current standby current input impedance output power Vselclip Gv CMRR SVRR VO cs Gv closed loop voltage gain common mode rejection ratio supply voltage ripple rejection DC output offset voltage channel separation channel unbalance Rs = 0 f = 1 kHz; Rs = 0 f = 1 kHz; Rs = 0 RL = 4 ; EIAJ RL = 4 ; THD = 10% RL = 4 ; THD = 2.5% RL = MIN. 6 90 23 18 25 45 40 GENERAL DESCRIPTION

TDA1563Q

The TDA1563Q is a monolithic power amplifier in a 17-lead DIL-bent-SIL plastic power package. It contains two identical 25 W amplifiers. The dissipation is minimized by switching from SE to BTL mode when a higher output voltage swing is needed. The device is primarily developed for car radio applications.

TYP. 14.4 95 1 120 38 25 20 26 80 65 70

MAX. 18 30 45 4 150 50 150 27 100 1

UNIT V V V A mA A k W W W dB dB dB mV dB dB

ORDERING INFORMATION TYPE NUMBER TDA1563Q 2000 Feb 09 PACKAGE NAME DBS17P DESCRIPTION plastic DIL-bent-SIL power package; 17 leads (lead length 12 mm) 2 VERSION SOT243-1

Philips Semiconductors

Product specication

2 25 W high efciency car radio power amplier

BLOCK DIAGRAM

TDA1563Q

handbook, full pagewidth

VP1 5

VP2 13

+
SLAVE CONTROL 10

OUT2

MUTE IN2 16

VI

IV

11

OUT2+

+
VI

IN2+

17

+
60 k 60 k 25 k Vref

+
VP 4

CIN

CSE

60 k IN1 2

60 k VI

+ +
VI

+
IV 7 OUT1

IN1+

1 MUTE

SLAVE CONTROL

OUT1+

TDA1563Q
STANDBY LOGIC 6 CLIP AND DIAGNOSTIC 12 14 15 9
MGR173

MODE

SC

DIAG

CLIP

GND

Fig.1 Block diagram.

2000 Feb 09

Philips Semiconductors

Product specication

2 25 W high efciency car radio power amplier

PINNING SYMBOL IN1+ IN1 CIN CSE VP1 MODE OUT1 OUT1+ GND OUT2 OUT2+ SC VP2 DIAG CLIP IN2 IN2+ PIN 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 DESCRIPTION non-inverting input 1 inverting input 1 common input electrolytic capacitor for SE mode supply voltage 1 mute/standby/operating inverting output 1 non-inverting output 1 ground inverting output 2 non-inverting output 2 selectable clip supply voltage 2 diagnostic: protection/temperature diagnostic: clip detection inverting input 2 non-inverting input 2
OUT1 OUT1+ GND 7 8 9
handbook, halfpage

TDA1563Q

IN1+ IN1 CIN CSE VP1 MODE

1 2 3 4 5 6

TDA1563Q

OUT2 10 OUT2+ 11 SC 12 VP2 13 DIAG 14 CLIP 15 IN2 16 IN2+ 17

MGR174

Fig.2 Pin configuration.

2000 Feb 09

Philips Semiconductors

Product specication

2 25 W high efciency car radio power amplier

FUNCTIONAL DESCRIPTION The TDA1563Q contains two identical amplifiers with differential inputs. At low output power (up to output amplitudes of 3 V (RMS) at VP = 14.4 V), the device operates as a normal SE amplifier. When a larger output voltage swing is needed, the circuit switches to BTL operation. With a sine wave input signal, the dissipation of a conventional BTL amplifier up to 2 W output power is more than twice the dissipation of the TDA1563Q (see Fig.10). In normal use, when the amplifier is driven with music-like signals, the high (BTL) output power is only needed for a small percentage of the time. Assuming that a music signal has a normal (Gaussian) amplitude distribution, the dissipation of a conventional BTL amplifier with the same output power is approximately 70% higher (see Fig.11). The heatsink has to be designed for use with music signals. With such a heatsink, the thermal protection will disable the BTL mode when the junction temperature exceeds 150 C. In this case, the output power is limited to 5 W per amplier. The gain of each amplifier is internally fixed at 26 dB. With the MODE pin, the device can be switched to the following modes: Standby with low standby current (<50 A) Mute condition, DC adjusted On, operation. The information on pin 12 (selectable clip) determines at which distortion figures a clip detection signal will be generated at the clip output. A logic 0 applied to pin 12 will select clip detection at THD = 10%, a logic 1 selects THD = 2.5%. A logic 0 can be realised by connecting this pin to ground. A logic 1 can be realised by connecting it to Vlogic (see Fig.7) or the pin can also be left open. Pin 12 may not be connected to VP because its maximum input voltage is 18 V (VP > 18 V under load dump conditions). The device is fully protected against a short circuit of the output pins to ground and to the supply voltage. It is also protected against a short circuit of the loudspeaker and against high junction temperatures. In the event of a permanent short circuit to ground or the supply voltage, the output stage will be switched off, causing low dissipation. With a permanent short circuit of the loudspeaker, the output stage will be repeatedly switched on and off. In the on condition, the duty cycle is low enough to prevent excessive dissipation.

TDA1563Q

To avoid plops during switching from mute to on or from on to mute/standby while an input signal is present, a built-in zero-crossing detector only allows switching at zero input voltage. However, when the supply voltage drops below 6 V (e.g. engine start), the circuit mutes immediately, avoiding clicks from the electronic circuit preceding the power amplifier. The voltage of the SE electrolytic capacitor (pin 4) is kept at 0.5VP by a voltage buffer (see Fig.1). The value of this capacitor has an important influence on the output power in SE mode. Especially at low signal frequencies, a high value is recommended to minimize dissipation. The two diagnostic outputs (clip and diag) are open-collector outputs and require a pull-up resistor. The clip output will be LOW when the THD of the output signal is higher than the selected clip level (10% or 2.5%). The diagnostic output gives information: about short circuit protection: When a short circuit (to ground or the supply voltage) occurs at the outputs (for at least 10 s), the output stages are switched off to prevent excessive dissipation. The outputs are switched on again approximately 50 ms after the short circuit is removed. During this short circuit condition, the protection pin is LOW. When a short circuit occurs across the load (for at least 10 s), the output stages are switched off for approximately 50 ms. After this time, a check is made to see whether the short circuit is still present. The power dissipation in any short circuit condition is very low. during startup/shutdown, when the device is internally muted. temperature detection: This signal (junction temperature > 145C) indicates that the temperature protection will become active. The temperature detection signal can be used to reduce the input signal and thus reduce the power dissipation.

2000 Feb 09

Philips Semiconductors

Product specication

2 25 W high efciency car radio power amplier

LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VP supply voltage PARAMETER CONDITIONS operating non-operating load dump; tr > 2.5 ms VP(sc) Vrp IORM Ptot Tstg Tvj Tamb short-circuit safe voltage reverse polarity voltage repetitive peak output current total power dissipation storage temperature virtual junction temperature ambient temperature 55 40 MIN.

TDA1563Q

MAX. 18 30 45 18 6 4 60 +150 150 V V V V V A

UNIT

W C C C

THERMAL CHARACTERISTICS SYMBOL Rth(j-c) Rth(j-a) Note 1. The value of Rth(c-h) depends on the application (see Fig.3). Heatsink design There are two parameters that determine the size of the heatsink. The first is the rating for the virtual junction temperature and the second is the ambient temperature at which the amplifier must still deliver its full power in the BTL mode. With a conventional BTL amplier, the maximum power dissipation with a music-like signal (at each amplier) will be approximately two times 6.5 W. At a virtual junction temperature of 150 C and a maximum ambient temperature of 65 C, Rth(vj-c) = 1.3 K/W and Rth(c-h) = 0.2 K/W, the thermal resistance of the heatsink 150 65 should be: --------------------- 1.3 0.2 = 5 K/W 2 6.5 Compared to a conventional BTL amplifier, the TDA1563Q has a higher efficiency. The thermal resistance of the 145 65 heatsink should be: 1.7 --------------------- 1.3 0.2 = 9 K/W 2 6.5 -
0.1 K/W

PARAMETER thermal resistance from junction to case thermal resistance from junction to ambient

CONDITIONS see note 1

VALUE 1.3 40

UNIT K/W K/W

handbook, halfpage

virtual junction OUT 1 OUT 2 OUT 2

OUT 1

3.6 K/W

3.6 K/W 3.6 K/W

3.6 K/W

0.6 K/W

0.6 K/W

MGC424

case

Fig.3 Thermal equivalent resistance network.

2000 Feb 09

Philips Semiconductors

Product specication

2 25 W high efciency car radio power amplier

DC CHARACTERISTICS VP = 14.4 V; Tamb = 25 C; measured in Fig.7; unless otherwise specied. SYMBOL Supplies VP Iq(tot) Istb VC VO supply voltage total quiescent current standby current average electrolytic capacitor voltage at pin 4 DC output offset voltage on state mute state Mode select switch (see Fig.4) Vms voltage at mode select pin (pin 6) standby condition mute condition operating condition Ims Diagnostic Vdiag Idiag VSC Protection Tpre Tdis(BTL) Notes 1. The circuit is DC biased at VP = 6 to 18 V and AC operating at VP = 8 to 18 V. 2. If the junction temperature exceeds 150 C, the output power is limited to 5 W per channel. prewarning temperature BTL disable temperature note 2 output voltage at diagnostic outputs (pins 14 and during any fault condition 15): protection/temperature and detection current through pin 14 or 15 input voltage at selectable clip pin (pin 12) during any fault condition clip detect at THD = 10% 2 switch current through pin 6 Vms = 5 V 0 2 4 5 note 1 RL = 6 PARAMETER CONDITIONS MIN.

TDA1563Q

TYP. MAX. UNIT

14.4 95 1 7.1

18 150 50 100 100

V mA A V mV mV

1 3 VP 40

V V V A V mA V V C C

25

0.5 0.5 18

clip detect at THD = 2.5% 1.5

145 150

2000 Feb 09

Philips Semiconductors

Product specication

2 25 W high efciency car radio power amplier

TDA1563Q

Vmode 18 handbook, halfpage

Operating

4 3 Mute 2 1 Standby 0
MGR176

Fig.4 Switching levels of the mode select switch.

2000 Feb 09

Philips Semiconductors

Product specication

2 25 W high efciency car radio power amplier

TDA1563Q

AC CHARACTERISTICS VP = 14.4 V; RL = 4 ; CSE = 1000 F; f = 1 kHz; Tamb = 25 C; measured in Fig.7; unless otherwise specied. SYMBOL Po PARAMETER output power CONDITIONS THD = 0.5% THD = 10% EIAJ VP = 13.2 V; THD = 0.5% VP = 13.2 V; THD = 10% THD Pd Bp fro(l) fro(h) Gv SVRR total harmonic distortion dissipated power power bandwidth low frequency roll-off high frequency roll-off closed loop voltage gain supply voltage ripple rejection THD = 1%; Po = 1 dB with respect to 15 W 1 dB; note 2 1 dB Po = 1 W Rs = 0 ; Vripple = 2 V (p-p) on/mute CMRR Zi Zi VSE-BTL Vn(o) common mode rejection ratio input impedance mismatch in input impedance SE to BTL switch voltage level noise output voltage note 3 Vi = 1 V (RMS) on; Rs = 0 ; note 4 on; Rs = 10 k; note 4 mute; note 5 cs Gv Notes 1. The distortion is measured with a bandwidth of 10 Hz to 30 kHz. 2. Frequency response externally fixed (input capacitors determine low frequency roll-off). 3. The SE to BTL switch voltage level depends on VP. 4. Noise output voltage measured with a bandwidth of 20 Hz to 20 kHz. 5. Noise output voltage is independent of Rs. channel separation channel unbalance Rs = 0 ; Po = 15 W Rs = 0 45 90 40 65 80 120 1 3 100 100 105 100 70 150 150 150 150 1 dB dB dB k % V V V V V dB dB standby; f = 100 Hz to 10 kHz 80 130 25 Po = 1 W; note 1 MIN. 15 23 19 25 38 16 20 0.1 TYP. MAX. UNIT W W W W W % W Hz Hz kHz dB

see Figs 10 and 11 20 to 15 000 25 26 27

Vo(mute) output voltage mute (RMS value)

2000 Feb 09

Philips Semiconductors

Product specication

2 25 W high efciency car radio power amplier

TDA1563Q

handbook, halfpage Io handbook, halfpage V

MGR177

10 s

max

t
0 max short circuit removed short circuit to ground

DIAG CLIP

0
0 t 50 ms 50 ms 50 ms

maximum current

short circuit to supply pins

MGR178

Fig.5 Clip detection waveforms.

Fig.6 Protection waveforms.

2000 Feb 09

10

Philips Semiconductors

Product specication

2 25 W high efciency car radio power amplier

TEST AND APPLICATION INFORMATION

TDA1563Q

handbook, full pagewidth

VP1 5

VP2 13

220 nF

2200 F

VP

TDA1563Q
0.5Rs 220 nF 4 IN2 16 10 OUT2 100 nF 3.9 100 nF

+
3.9

0.5Rs 220 nF IN2+ 17 60 k CIN 3 1 F 60 k IN1 2 60 k 60 k 25 k Vref

11 OUT2+

4 CSE 1000 F

0.5Rs 220 nF

7 OUT1 3.9 100 nF 8 OUT1+ 100 nF 3.9

4 0.5Rs 220 nF IN1+ 1

STANDBY LOGIC 6 MODE Vms

CLIP AND DIAGNOSTIC 12 SC 14 DIAG 15 CLIP 9 GND Rpu Vlogic 2.5% 10%
MGR180

signal ground power ground

Rpu

Connect Boucherot filter to pin 8 or pin 10 with the shortest possible connection.

Fig.7 Application diagram.

2000 Feb 09

11

Philips Semiconductors

Product specication

2 25 W high efciency car radio power amplier

TDA1563Q

handbook, full pagewidth

76.20

35.56

+
Out2

RL-98
2.5% Clip

Out2

In1

In2

Mode On Off

10% Mute Vp GND Clip

Prot gnd

gnd

TDA1563Q
MGR189

Dimensions in mm.

Fig.8 PCB layout (component side) for the application of Fig.7.

2000 Feb 09

12

Philips Semiconductors

Product specication

2 25 W high efciency car radio power amplier

TDA1563Q

handbook, full pagewidth

76.20

35.56

2 25 W high efficiency
Out2 17 220 nF In2 220 nF Out1

1 1 F 220 nF

In1

GND Vp
MGR190

Dimensions in mm.

Fig.9 PCB layout (soldering side) for the application of Fig.7.

2000 Feb 09

13

Philips Semiconductors

Product specication

2 25 W high efciency car radio power amplier

TDA1563Q

handbook, halfpage

25 Pd (W)

MBH692

handbook, halfpage

25 Pd (W)

MBH693

20
(1)

20
(1)

15
(2)

15

10

10

(2)

0 0 2 4 6 8 Po (W) 10

0 0 2 4 6 8 Po (W) 10

Input signal 1 kHz, sinusoidal; VP = 14.4 V. (1) For a conventional BTL amplifier. (2) For TDA1563Q.

(1) For a conventional BTL amplifier. (2) For TDA1563Q.

Fig.10 Dissipation; sine wave driven.

Fig.11 Dissipation; pink noise through IEC-268 filter.

430

2.2 F

330

2.2 F

470 nF

input

3.3 k

91 nF

3.3 k

68 nF

10 k

output

MGC428

Fig.12 IEC-268 filter.

2000 Feb 09

14

Philips Semiconductors

Product specication

2 25 W high efciency car radio power amplier

TDA1563Q

handbook, full pagewidth

VP1 5

VP2 13

220 nF

2200 F

VP

TDA1563Q
IN2 16 220 nF 4 10 OUT2 100 nF 3.9 100 nF

+
3.9

IN2+ 17 220 nF 60 k 60 k 25 k Vref

11 OUT2+

CIN 3 1 F IEC-268 FILTER IN1 2 pink noise 220 nF 60 k

4 CSE 1000 F

60 k

7 OUT1 3.9 100 nF 8 OUT1+ 100 nF 3.9

4 IN1+ 1 220 nF

STANDBY LOGIC 6 MODE Vms

CLIP AND DIAGNOSTIC 12 SC 14 DIAG 15 CLIP 9 GND Rpu Vlogic Rpu

signal ground power ground

MGR181

Fig.13 Test and application diagram for dissipation measurements with a music-like signal (pink noise).

2000 Feb 09

15

Philips Semiconductors

Product specication

2 25 W high efciency car radio power amplier

TDA1563Q

handbook, halfpage

150

MDA845

handbook, halfpage

250 Ip

MDA844

Iq (mA) 100

(mA) 200

150

100 50 50

0 0 8 16 Vp (V) 24

0 0 2 4 Vms (V) 6

Vms = 5 V; RI = .

VP = 14.4 V; Vi = 25 mV

Fig.14 Quiescent current as a function of VP.

Fig.15 IP as a function of Vms (pin 3).

handbook, halfpage

60

MDA843

handbook, halfpage

10

MDA842

Po (W)
(1)

THD + N (%) 1
(1)

40

(2)

20
(3)

101

(2) (3)

0 8 10 12 14 16 Vp (V) 18

102 102

101

10

Po (W)

102

(1) EIAJ, 100 Hz. (2) THD = 10 %. (3) THD = 0.5 %.

(1) f = 10 kHz. (2) f = 1 kHz. (3) f = 100 Hz.

Fig.16 Output power as a function of VP.

Fig.17 THD + noise as a function of Po.

2000 Feb 09

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Philips Semiconductors

Product specication

2 25 W high efciency car radio power amplier

TDA1563Q

handbook, halfpage

10

MDA841

handbook, halfpage

28

MDA840

THD + N (%) 1
(1)

Gv (dB) 26

24
(2)

101 22

102 10

102

103

104

f (Hz)

105

20 10

102

103

104

105

f (Hz)

106

(1) Po = 10 W. (2) Po = 1 W.

Vi = 100 mV.

Fig.18 THD + noise as a function of frequency.

Fig.19 Gain as a function of frequency.

handbook, halfpage

10

MDA838

handbook, halfpage

MDA839

cs (dB) 30

SVRR (dB) 20

50

40

70

(1)

60

(2)

90 10

102

103

104

f (Hz)

105

80 10

102

103

104

f (Hz)

105

(1) Po = 10 W. (2) Po = 1 W. Vripple(p-p) = 2 V.

Fig.20 Channel separation as a function of frequency.

Fig.21 SVRR as a function of frequency.

2000 Feb 09

17

Philips Semiconductors

Product specication

2 25 W high efciency car radio power amplier

TDA1563Q

handbook, halfpage

0.8

MDA846

Po (W) 0.6

0.4

0.2

0 0 8 16 Vp (V) 24

Vi = 70 mV.

Fig.22 AC operating as a function of VP.

2000 Feb 09

18

Philips Semiconductors

Product specication

2 25 W high efciency car radio power amplier

TDA1563Q

handbook, full pagewidth

VP Vload

MGL914

VP VP Vmaster 1/2 VP

0 VP Vslave 1/2 VP

t (ms)

See Fig.7: Vload = V7 V8 or V11 V10 Vmaster = V7 or V11 Vslave = V8 or V10

Fig.23 Output waveforms.

2000 Feb 09

19

Philips Semiconductors

Product specication

2 25 W high efciency car radio power amplier

APPLICATION NOTES Example of the TDA1563Q in a car radio system solution The PCB shown here is used to demonstrate an audio system solution with Philips Semiconductors devices for car audio applications. The board includes the SAA7705H: a high-end CarDSP (Digital Signal Processor), the TDA3617J: a voltage regulator providing 9 V, 5 V and 3.3 V outputs, and two TDA1563Qs to provide four 25 W power outputs. A complete kit (application report, software and demo board) of this car-audio chip-set demonstrator is available. The TDA1563Q is a state of the art device, which is different to conventional amplifiers in power dissipation because it switches between SE mode and conventional BTL mode, depending on the required output voltage swing. As a result, the PCB layout is more critical than with conventional amplifiers. NOTES AND LAYOUT DESIGN RECOMMENDATIONS 1. The TDA1563Q mutes automatically during switch-on and switch-off and suppresses biasing clicks coming from the CarDSP circuit preceding the power amplifier. Therefore, it is not necessary to use a plop reduction circuit for the CarDSP. To mute or to enlarge the mute time of the system, the voltage at the mode pin of the amplifiers should be kept between 2 V and 3 V. 2. The input reference capacitor at pin 3 is specified as 1 F but has been increased to 10 F to improve the switch-on plop performance of the amplifiers. By doing this, the minimum switch-on time increases from standby, via internal mute, to operating from 150 ms to 600 ms. 3. It is important that the copper tracks to and from the electrolytic capacitors (SE capacitors and supply capacitors) are close together. Because of the switching principle, switching currents flow here. Combining electrolytic capacitors in a 4-channel application is not recommended. 4. Filters at the outputs are necessary for stability reasons. The filters at output pins 8 and 10 to ground should be connected as close as possible to the device (see layout of PCB).

TDA1563Q

5. Connect the supply decoupling capacitors of 220 nF as closely as possible to the TDA1563Qs. 6. Place the tracks of the differential inputs as close together as possible. If disturbances are injected at the inputs, they will be amplified 20 times. Oscillation may occur if this is not done properly. 7. The SE line output signal of the CarDSP here is offered as a quasi differential input signal to the amplifiers by splitting the 100 unbalance series resistance into two 47 balanced series resistances. The return track from the minus inputs of the amplifiers are not connected to ground (plane) but to the line out reference voltage of the CarDSP, VrefDA. 8. The output signal of the CarDSP needs an additional 1st order filter. This is done by the two balanced series resistances of 47 (see note 7) and a ceramic capacitor of 10 nF. The best position to place these 10 nF capacitors is directly on the input pins of the amplifiers. Now, any high frequency disturbance at the inputs of the amplifiers will be rejected. 9. Only the area underneath the CarDSP is a ground plane. A ground plane is necessary in PCB areas where high frequency digital noise occurs. The audio outputs are low frequency signals. For these outputs, it is better to use two tracks (feed and return) as closely as possible to each other to make the disturbances common mode. The amplifiers have differential inputs with a very high common mode rejection. 10. The ground pin of the voltage regulator is the reference for the regulator outputs. This ground reference should be connected to the ground plane of the CarDSP by one single track. The ground plane of the CarDSP may not be connected to another ground by a second connection. 11. Prevent power currents from flowing through the ground connection between CarDSP and voltage regulator. The currents in the ground from the amplifiers are directly returned to the ground pin of the demo board. By doing this so, no ground interference between the components will occur.

2000 Feb 09

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Philips Semiconductors

Product specication

2 25 W high efciency car radio power amplier

TDA1563Q

handbook, full pagewidth

(3)

(3)

Car-audio chip-set demonstrator

TDA3617J

TDA1563Q

TDA1563Q Rear VBATT IO-98

+
2.5% Line-in 10% Car DSP SAA7704/05/08 on bottom side

Front

FL

+ +

+
FR

RL Error On Diag Clip

+
RR

Left

10 V to 16 V Vbattery

Right

Power ON

Mute

GND I2C

PHILIPS Semiconductors Top copper layer

(4) (5) (8) (6)

Car-audio chip-set demonstrator

Version 0.1

2000 Feb 09

4 25 W into 4 Ohms DSP

Bottom copper layer

MGS827

Fig.24 PCB layout.

21

Philips Semiconductors

Product specication

2 25 W high efciency car radio power amplier

TDA1563Q

handbook, full pagewidth

MICROCONTROLLER
VBATT power Ven1 GND Ven3 2

VOLTAGE REGULATOR
3 VP 220 nF 8 6 REG2 7 9 5 REG3 PLANE GND HOLD Ven2 GND VBATT

TDA3617J
1

4.7 k power on

47 F

47 nF

47 F

5V 47 nF 10 k

GND 4.7 k error

GND

5V

3.3 V DIG 3.3 V ANA

GND

BAS16/A6

A
10 k

1 M mute 4.7 k diagnostic 4.7 k 5V clip 100 3.3 V ANA 100 nF PLANE VDDD5V1 VDACN2 22 nF PLANE 22 nF PLANE 22 nF PLANE VDDD5V2 VDDD5V3 VDDD3V1 VDDD3V2 VDDD3V3 VDDD3V4 VSSD5V1 VSSD5V2 VSSD5V3 VSSD3V1 VSSD3V2 VSSD3V3 VSSD3V4 100 nF PLANE FLV 2.2 nF 47 BLM21A10 3.3 V DIG 100 nF PLANE 3.3 V ANA BC848B/1k GND

B C

VDDA1

VDACP 100 F

TP5

100

74

75

76

21

22

23

36

37

46

47

48 51 52 55

49 50 53 54

VDDA2 11 16

VSSA1

D
FLI 47

VDACN1 PLANE 330 pF CDLB

2 15

E
FRV 2.2 nF 47

13 73 72 14

F
FRI 47

1 F 15 k LEFT

8.2 k CDLI 330 pF CDRB 8.2 k CDRI

G
47

LINE IN RIGHT

71 70

1 F 15 k 1 F CD-GND

Car DSP SAA7704/05 / 08H

RRV 2.2 nF

H
RRI 47

I
RLV 2.2 nF 47

CDGND 1 M VREFAD 82 k AMAFR AMAFL TAPER TAPEL

77

J
47

78 66 67 68 69 4 AML 3 61 FML SELFR 65 VDD(OSC) 62 VSS(OSC) 63 OSCIN 64 OSCOUT 42 DSPRESET 57 SCL 58 SDA 56 A0 24 25 26 27 28 29 43 44 45 RTCB SHTCB CD2WS CD2DATA CD1WS CD1DATA TSCAN CD2CL CD1CL

RLI

K
VREFDA VSSA2 22 F

12

10

47 nF

22 F

PLANE

PLANE

100 nF PLANE BLM21A10 1 to 5 6 I2C SCL SDA 8 7 PLANE 5V 3.3 V DIG PLANE

X1

220 nF PLANE 220 220 100 pF PLANE PLANE

MGS825

18 pF

18 pF PLANE

100 pF PLANE

PLANE

Fig.25 Car-audio chip-set demonstrator (continued in Fig.26).

2000 Feb 09

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Philips Semiconductors

Product specication

2 25 W high efciency car radio power amplier

TDA1563Q

handbook, full pagewidth

100 H/6A VBATT V battery GND

A
clip select 2.5% 10% GND 5V

GND

PGND

B C
VBATT (16 V) 220 nF VP1 VP2 MODE CLIP DIAG SC IN2+ 5 6 15 14 12 17 10 OUT2 13 2200 F PGND

GND 9 CSE 4 11 OUT2+ 1000 F (16 V) OUT+ 3.9 100 nF OUT 3.9 100 nF 3.9 100 nF PGND FRONT LEFT

220 nF 220 nF 10 nF IN2 IN1+ 16 1

TDA1563Q

PGND 8 OUT1+ 100 nF OUT+ 3.9 7 OUT1 FRONT RIGHT OUT

220 nF 220 nF

10 nF IN1 CIN

2 3

10 F PGND

2 HIGH EFFICIENCY POWER AMPLIFIER

3 1 8 2 17 OUT1+ 7 OUT1 3.9 100 nF PGND OUT REAR RIGHT OUT+ 3.9 100 nF

10 F CIN

J
IN1+ 220 nF 10 nF 220 nF IN1 IN2+ 220 nF 10 nF 220 nF IN2 SC DIAG CLIP MODE 10 16 12 14 15 6 5 13 11 4 9 OUT2+ CSE

TDA1563Q
OUT2

3.9 100 nF PGND OUT 100 nF 3.9 1000 F (16 V) REAR LEFT OUT+

VP1 VP2 220 nF 2200 F VBATT (16 V)

GND

PGND

MGS826

Fig.26 Car-audio chip-set demonstrator (continued from Fig.25).

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Philips Semiconductors

Product specication

2 25 W high efciency car radio power amplier

Advantages of high efciency Power conversion improvement (power supply) Usually, the fact that the reduction of dissipation is directly related to supply current reduction is neglected. One advantage is less voltage drop in the whole supply chain. Another advantage is less stress for the coil in the supply line. Even the adapter or supply circuit remains cooler than before as a result of the reduced heat dissipation in the whole chain because more supply current will be converted to output power. Power dissipation reduction This is the best known advantage of high efficiency amplifiers. Heatsink size reduction The heatsink size of a conventional amplifier may be reduced by approximately 50% at VP = 14.4 V when the TDA1563Q is used. In this case, the maximum heatsink temperature will remain the same. Heatsink temperature reduction The power dissipation and the thermal resistance of the heatsink determine the heatsink temperature rise. When the same heatsink size is used as in a conventional amplifier, the maximum heatsink temperature decreases and also the maximum junction temperature, which extends the life of this semiconductor device. The maximum dissipation with music-like input signals decreases by 40%. It is clear that the use of the TDA1563Q saves a significant amount of energy. The maximum supply current decreases by approximately 32%, which reduces the dissipation in the amplifier as well in the whole supply chain. The TDA1563Q allows a heatsink size reduction of approximately 50% or a heatsink temperature decrease of 40% when the heatsink size is not changed.
handbook, halfpage

TDA1563Q

VP = 14.4 V

Supply current reduction of 32%

Power dissipation reduction of 40% at Po = 1.6 W

Same junction temperature

choice

Same heatsink size

Heatsink size reduction of 50%

Heatsink temperature reduction of 40%

MGS824

Fig.27 Heatsink design

Advantage of the concept used by the TDA1563Q The TDA1563Q is highly efficient under all conditions, because it uses a SE capacitor to create a non-dissipating half supply voltage. Other concepts rely on both input signals being the same in amplitude and phase. With the concept of an SE capacitor, it does not matter what kind of signal processing is done on the input signals. For example, amplitude difference, phase shift or delays between both input signals, or other DSP processing, have no impact on the efficiency.

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Philips Semiconductors

Product specication

2 25 W high efciency car radio power amplier

INTERNAL PIN CONFIGURATIONS PIN 1, 2, 16, 17 and 3 NAME IN1+, IN1, IN2, IN2+ and CIN EQUIVALENT CIRCUIT
VP1, VP2

TDA1563Q

VP1, VP2 1, 2, 16, 17

MGR182

CSE

VP1

VP2

MGR183

MODE
6

MGR184

7, 11

OUT1, OUT2+

VP1, VP2

7, 11

4
MGR185

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Philips Semiconductors

Product specication

2 25 W high efciency car radio power amplier

PIN 8, 10 NAME OUT1+, OUT2 EQUIVALENT CIRCUIT
VP1, VP2

TDA1563Q

8, 10

4
MGR186

12

SC

VP2

12

MGR187

14, 15

PROT, CLIP

VP2

14, 15

MGR188

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Philips Semiconductors

Product specication

2 25 W high efciency car radio power amplier

PACKAGE OUTLINE DBS17P: plastic DIL-bent-SIL power package; 17 leads (lead length 12 mm)

TDA1563Q

SOT243-1

non-concave D x Dh

Eh

view B: mounting base side

A2

B j E A

L3

Q c v M

1 Z e e1 bp w M

17 m e2

5 scale

10 mm

DIMENSIONS (mm are the original dimensions) UNIT mm A 17.0 15.5 A2 4.6 4.4 bp 0.75 0.60 c 0.48 0.38 D (1) 24.0 23.6 d 20.0 19.6 Dh 10 E (1) 12.2 11.8 e 2.54 e1 e2 Eh 6 j 3.4 3.1 L 12.4 11.0 L3 2.4 1.6 m 4.3 Q 2.1 1.8 v 0.8 w 0.4 x 0.03 Z (1) 2.00 1.45

1.27 5.08

Note 1. Plastic or metal protrusions of 0.25 mm maximum per side are not included. OUTLINE VERSION SOT243-1 REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION

ISSUE DATE 97-12-16 99-12-17

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Philips Semiconductors

Product specication

2 25 W high efciency car radio power amplier

SOLDERING Introduction to soldering through-hole mount packages This text gives a brief insight to wave, dip and manual soldering. A more in-depth account of soldering ICs can be found in our Data Handbook IC26; Integrated Circuit Packages (document order number 9398 652 90011). Wave soldering is the preferred method for mounting of through-hole mount IC packages on a printed-circuit board. Soldering by dipping or by solder wave The maximum permissible temperature of the solder is 260 C; solder at this temperature must not be in contact with the joints for more than 5 seconds.

TDA1563Q

The total contact time of successive solder waves must not exceed 5 seconds. The device may be mounted up to the seating plane, but the temperature of the plastic body must not exceed the specified maximum storage temperature (Tstg(max)). If the printed-circuit board has been pre-heated, forced cooling may be necessary immediately after soldering to keep the temperature within the permissible limit. Manual soldering Apply the soldering iron (24 V or less) to the lead(s) of the package, either below the seating plane or not more than 2 mm above it. If the temperature of the soldering iron bit is less than 300 C it may remain in contact for up to 10 seconds. If the bit temperature is between 300 and 400 C, contact may be up to 5 seconds.

Suitability of through-hole mount IC packages for dipping and wave soldering methods SOLDERING METHOD PACKAGE DIPPING DBS, DIP, HDIP, SDIP, SIL Note 1. For SDIP packages, the longitudinal axis must be parallel to the transport direction of the printed-circuit board. DEFINITIONS Data sheet status Objective specication Preliminary specication Product specication Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specication is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specication. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. This data sheet contains target or goal specications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains nal product specications. suitable suitable(1) WAVE

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Philips Semiconductors

Product specication

2 25 W high efciency car radio power amplier

NOTES

TDA1563Q

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29

Philips Semiconductors

Product specication

2 25 W high efciency car radio power amplier

NOTES

TDA1563Q

2000 Feb 09

30

Philips Semiconductors

Product specication

2 25 W high efciency car radio power amplier

NOTES

TDA1563Q

2000 Feb 09

31

Philips Semiconductors a worldwide company

Argentina: see South America Australia: 3 Figtree Drive, HOMEBUSH, NSW 2140, Tel. +61 2 9704 8141, Fax. +61 2 9704 8139 Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 1 60 101 1248, Fax. +43 1 60 101 1210 Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6, 220050 MINSK, Tel. +375 172 20 0733, Fax. +375 172 20 0773 Belgium: see The Netherlands Brazil: see South America Bulgaria: Philips Bulgaria Ltd., Energoproject, 15th floor, 51 James Bourchier Blvd., 1407 SOFIA, Tel. +359 2 68 9211, Fax. +359 2 68 9102 Canada: PHILIPS SEMICONDUCTORS/COMPONENTS, Tel. +1 800 234 7381, Fax. +1 800 943 0087 China/Hong Kong: 501 Hong Kong Industrial Technology Centre, 72 Tat Chee Avenue, Kowloon Tong, HONG KONG, Tel. +852 2319 7888, Fax. +852 2319 7700 Colombia: see South America Czech Republic: see Austria Denmark: Sydhavnsgade 23, 1780 COPENHAGEN V, Tel. +45 33 29 3333, Fax. +45 33 29 3905 Finland: Sinikalliontie 3, FIN-02630 ESPOO, Tel. +358 9 615 800, Fax. +358 9 6158 0920 France: 51 Rue Carnot, BP317, 92156 SURESNES Cedex, Tel. +33 1 4099 6161, Fax. +33 1 4099 6427 Germany: Hammerbrookstrae 69, D-20097 HAMBURG, Tel. +49 40 2353 60, Fax. +49 40 2353 6300 Hungary: see Austria India: Philips INDIA Ltd, Band Box Building, 2nd floor, 254-D, Dr. Annie Besant Road, Worli, MUMBAI 400 025, Tel. +91 22 493 8541, Fax. +91 22 493 0966 Indonesia: PT Philips Development Corporation, Semiconductors Division, Gedung Philips, Jl. Buncit Raya Kav.99-100, JAKARTA 12510, Tel. +62 21 794 0040 ext. 2501, Fax. +62 21 794 0080 Ireland: Newstead, Clonskeagh, DUBLIN 14, Tel. +353 1 7640 000, Fax. +353 1 7640 200 Israel: RAPAC Electronics, 7 Kehilat Saloniki St, PO Box 18053, TEL AVIV 61180, Tel. +972 3 645 0444, Fax. +972 3 649 1007 Italy: PHILIPS SEMICONDUCTORS, Via Casati, 23 - 20052 MONZA (MI), Tel. +39 039 203 6838, Fax +39 039 203 6800 Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku, TOKYO 108-8507, Tel. +81 3 3740 5130, Fax. +81 3 3740 5057 Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL, Tel. +82 2 709 1412, Fax. +82 2 709 1415 Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR, Tel. +60 3 750 5214, Fax. +60 3 757 4880 Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905, Tel. +9-5 800 234 7381, Fax +9-5 800 943 0087 Middle East: see Italy Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB, Tel. +31 40 27 82785, Fax. +31 40 27 88399 New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND, Tel. +64 9 849 4160, Fax. +64 9 849 7811 Norway: Box 1, Manglerud 0612, OSLO, Tel. +47 22 74 8000, Fax. +47 22 74 8341 Pakistan: see Singapore Philippines: Philips Semiconductors Philippines Inc., 106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI, Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474 Poland: Al.Jerozolimskie 195 B, 02-222 WARSAW, Tel. +48 22 5710 000, Fax. +48 22 5710 001 Portugal: see Spain Romania: see Italy Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW, Tel. +7 095 755 6918, Fax. +7 095 755 6919 Singapore: Lorong 1, Toa Payoh, SINGAPORE 319762, Tel. +65 350 2538, Fax. +65 251 6500 Slovakia: see Austria Slovenia: see Italy South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale, 2092 JOHANNESBURG, P.O. Box 58088 Newville 2114, Tel. +27 11 471 5401, Fax. +27 11 471 5398 South America: Al. Vicente Pinzon, 173, 6th floor, 04547-130 SO PAULO, SP, Brazil, Tel. +55 11 821 2333, Fax. +55 11 821 2382 Spain: Balmes 22, 08007 BARCELONA, Tel. +34 93 301 6312, Fax. +34 93 301 4107 Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM, Tel. +46 8 5985 2000, Fax. +46 8 5985 2745 Switzerland: Allmendstrasse 140, CH-8027 ZRICH, Tel. +41 1 488 2741 Fax. +41 1 488 3263 Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1, TAIPEI, Taiwan Tel. +886 2 2134 2886, Fax. +886 2 2134 2874 Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd., 209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260, Tel. +66 2 745 4090, Fax. +66 2 398 0793 Turkey: Yukari Dudullu, Org. San. Blg., 2.Cad. Nr. 28 81260 Umraniye, ISTANBUL, Tel. +90 216 522 1500, Fax. +90 216 522 1813 Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7, 252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461 United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes, MIDDLESEX UB3 5BX, Tel. +44 208 730 5000, Fax. +44 208 754 8421 United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409, Tel. +1 800 234 7381, Fax. +1 800 943 0087 Uruguay: see South America Vietnam: see Singapore Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD, Tel. +381 11 3341 299, Fax.+381 11 3342 553

For all other countries apply to: Philips Semiconductors, International Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 Philips Electronics N.V. 2000

Internet: http://www.semiconductors.philips.com

SCA 69

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.

Printed in The Netherlands

753503/25/02/pp32

Date of release: 2000

Feb 09

Document order number:

9397 750 06309