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SRFET
General Description
SRFET AON6716L uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS(ON),and low gate charge. This device is suitable for use as a low side FET in SMPS, load switching and general purpose applications.
TM
TM
Product Summary
VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 4.5V) 30V 85A < 2.8m < 4.2m
Top View
1 2 3 4 8 7 6 5
D
TM
DFN5X6 Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current G Pulsed Drain Current Continuous Drain Current Avalanche Current C Repetitive avalanche energy L=0.1mH C TC=25C Power Dissipation
B C
Units V V A
A A mJ W W C
Power Dissipation A
Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A AD Maximum Junction-to-Ambient Maximum Junction-to-Case
Symbol
t 10s Steady-State Steady-State
RJA RJC
Typ 14 40 1
Max 17 55 1.5
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AON6716L
Electrical Characteristics (T J=25C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) RDS(ON) gFS VSD IS Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Static Drain-Source On-Resistance VGS=4.5V, ID=20A Forward Transconductance VDS=5V, ID=20A Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current 3300 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 560 240 0.2 58 VGS=10V, VDS=15V, ID=20A 29 14 7 VGS=10V, VDS=15V, RL=0.75, RGEN=3 IF=20A, dI/dt=500A/s 12 25 Conditions ID=250A, VGS=0V VDS=30V, VGS=0V TJ=125C VDS=0V, VGS= 20V VDS=VGS ID=250A VGS=10V, VDS=5V VGS=10V, ID=20A TJ=125C 1.2 310 2.3 3.4 3.3 120 0.45 0.7 85 4100 800 400 0.4 72 36 17 12 11 5.5 40 10 15 31 18 37 4900 1050 560 0.6 86 43 20 17 2.8 4.1 4.2 1.7 Min 30 0.1 20 100 2.2 Typ Max Units V mA nA V A m m S V A pF pF pF nC nC nC nC ns ns ns ns ns nC
DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance
SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time
A. The value of RJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with TA =25C. The Power dissipation PDSM is based on R JA and the maximum allowed junction temperature of 150C. The value in any given application depends on the user's specific board design, and the maximum temperature of 150C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=150C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150C. Ratings are based on low frequency and duty cycles to keep initial TJ =25C. D. The RJA is the sum of the thermal impedence from junction to case R JC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150C. The SOA curve provides a single pulse rating. G. The maximum current rating is limited by package. H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25C.
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
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AON6716L
ID (A)
17 5 2 10
8 7 6 RDS(ON) (m) 5 4 3 2 1 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) 25C 125C ID=20A
1.0E+02
40 1.0E+01
IS (A) 125C 25C
1.0E+00
1.0E-01
1.0E-02 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E)
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AON6716L
Coss
800
RDS(ON) limited DC
10s
700
10s
Power (W)
100s 1ms
TJ(Max)=150C TC=25C
TJ(Max)=150C TC=25C
17 5 2 10
0.1
1 VDS (Volts)
10
100
0 0.0001
0.001
0.01
0.1
Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 10 ZJC Normalized Transient Thermal Resistance
Pulse Width (s) 18 Figure 10: Single Pulse Power Rating Junction-toCase (Note F)
10
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
0.1
PD Ton T 10 100
0.01 0.00001
Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
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AON6716L
0.00001 0.0001 0.001 Time in avalanche, tA (s) Figure 12: Single Pulse Avalanche capability (Note C)
50
75
100
125
150
100 80 60 40 20 0 0 25 50 75 100 125 150 TCASE (C) Figure 14: Current De-rating (Note F)
10000
TA=25C
1000
100
17 5 2 10
Power (W)
10
1 0.00001
0.001
0.1
10
1000
Pulse Width (s) 18 Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H)
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
0.01
T 100 1000
Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
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AON6716L
1.0E-01 1.0E-02 1.0E-03 1.0E-04 VDS=15V 1.0E-05 1.0E-06 0 100 150 200 Temperature (C) Figure 17: Diode Reverse Leakage Current vs. Junction Temperature 12 di/dt=800A/s 40 Qrr Qrr (nC) 30 20 10 0 0 5 10 15 20 25 30 IS (A) Figure 18: Diode Reverse Recovery Charge and Peak Current vs. Conduction Current 45 40 35 30 Qrr (nC) 25 20 15 10 5 0 0 200 400 600 800 Irm Qrr 125C 25C Is=20A 125C 25C 8 6 4 2 0 1000 10 Irm 25C 25C 125C 10 8 6 4 2 50 VDS=30V VSD (V)
20A
IR (A)
100 150 200 Temperature (C) Figure 18: Diode Forward voltage vs. Junction Temperature 3 125C 25C 2.5 2 1.5 25C S 125C 1 0.5 0 S S
50
di/dt=800A/s trr
125C
10
15
20
25
30
IS (A) Figure 19: Diode Reverse Recovery Time and Softness Factor vs. Conduction Current 20 18 16 trr (ns) Irm (A) 14 12 10 8 6 4 0 200 400 600 800 0.2 1000 125 S 0.7 125C 25C 25C trr Is=20A 1.7 2.2
1.2
di/dt (A/s) Figure 20: Diode Reverse Recovery Charge and Peak Current vs. di/dt
di/dt (A/s) Figure 21: Diode Reverse Recovery Time and Softness Factor vs. di/dt
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AON6716L
+
VDC
10V
VDC
DUT
Vgs
+ Vds -
Qgs
Qgd
Ig
Charge
Vds
Vds
Vgs
Rg Vgs
DUT
VDC
+ Vdd Vgs
t d(on) ton tr t d(off) toff tf
90%
10%
BVDSS
Id
Vds
Vgs
Rg
DUT
Vgs
VDC
+ Vdd Id
I AR
Vgs
Vgs
DUT
Vgs
t rr
Vds -
Isd
Isd
IF
Vgs Ig
VDC
+ Vdd Vds
dI/dt
I RM Vdd
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