Section 6: Ion Implantation Jaeger Chapter 5

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Ion Implantation - Overview

Wafer is Target in High Energy Accelerator Impurities Shot into Wafer Preferred Method of Adding Impurities to Wafers
Wide Range of Impurity Species (Almost Anything) Tight Dose Control (A few % vs. 20-30% for high temperature pre-deposition processes) Low Temperature Process

Expensive Systems Vacuum System

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Force on charged particle

F=q vxB

Equipment

Magnetic Field Implanted Dose

2mV B= qr 2 1 Q= I (t )dt nqA 0

T

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Ion Implantation
+ y C(x) as-implant depth profile

Blocking mask Si

Equal-Concentration contours

Depth x

Reminder: During implantation, temperature is ambient. However, Reminder: During implantation, temperature is ambient. However, post-implant annealing step (>900ooC)is required to anneal out defects. post-implant annealing step (>900 C) is required to anneal out defects.

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Advantages of Ion Implantation

Precise control of dose and depth profile Low-temp. process (can use photoresist as mask) Wide selection of masking materials
e.g. photoresist, oxide, poly-Si, metal

Less sensitive to surface cleaning procedures Excellent lateral uniformity (< 1% variation across 12 wafer)
Application example: self-aligned MOSFET source/drain regions
As+ As+ As+

Poly Si Gate

n+ p-Si
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n+

SiO2

Ion Implantation Energy Loss Mechanisms

Nuclear stopping Si + Si + Crystalline Si substrate damaged by collision e +

e Electronic stopping + Si

Electronic excitation creates heat

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Ion Energy Loss Characteristics

Light ions/at higher energy Heavier ions/at lower energy EXAMPLES Implanting into Si: more electronic stopping more nuclear stopping

H+ B+ As+

Electronic stopping dominates Electronic stopping dominates Nuclear stopping dominates

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Stopping Mechanisms

B into Si P into Si As into Si

E1(keV) 3 17 73

E2(keV) 17 140 800

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Simulation of 50keV Boron implanted into Si

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Model for blanket implantation

Gaussian Profile (x R p )2 N ( x ) = N p exp 2 2R p R p = Projected Range Q = N ( x )dx = 2 N p R p
0

R p = Straggle Dose

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Projected Range and Straggle

Rp and Rp values are given in tables or charts
e.g. see pp. 113 of Jaeger

Note: this means 0.02 m.

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Selective Implantation

N ( x, y ) = N ( x )F ( y ) ya y + a 1 F ( y ) = erfc 2R erfc 2R 2 R = transverse straggle N(x ) is one - dimensional solution

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Transverse (or Lateral) Straggle (Rt or R)

Rt Rp >1
Rt
Rp Rt

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Feature Enlargement due to lateral straggle

y Mask x x = Rp Lower concentration Higher concentration

Implanted species Implanted species has lateral distribution, has lateral distribution, larger than mask opening larger than mask opening

C(y) at x=Rp

y
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Definitions of Profile Parameters (1) Dose = 0 C( x )dx

x C (x )dx 1 (3) Longitudinal Straggle: (R ) (x R )

(2) Projected Range: R p
1
0 2 p

(4) Skewness: M 3 (5) Kurtosis:

, (x - Rp ) C(x )dx
3 0

C ( x )dx

M 3 > 0 or < 0

-describes asymmetry between left side and right side

(x R ) C (x )dx
4 0 p

C(x)

Kurtosis characterizes the contributions of the tail regions

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Rp

Selective Implantation Mask thickness

Desire Implanted Impurity Level to be Much Less Than Wafer Doping N(X0) << NB
or

N(X0) < NB/10

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Transmission Factor of Implantation Mask

Mask material (e.g. photoresist) C(x)

Si substrate

What fraction of dose gets into Si substrate?

x=0 C(x)

x=d Mask material with d=

x=0 x=d

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Transmitted Fraction
T = 0 C(x )dx
d C 0

(x )dx
Rp , Rp
are values of for ions into the masking material

d Rp 1 = erfc 2 2Rp erfc(x ) = 1 2

x y2 e dy 0

Rule of thumb : Good masking thickness

d = Rp + 4.3Rp

C(x = d ) 4 ~ 10 C(x = Rp )

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Junction Depth
The junction depth is calculated from the point at which the implant profile concentration = bulk concentration:

N (x j ) = N B

(x j R p )2 N p exp = NB 2 2 R p x j = R p R p Np 2 ln N B

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Sheet Resistance RS of Implanted Layers

Example: n n-type dopants implanted into p-type substrate x =0 x =xj p-sub (CB) x
C(x) log scale

RS =

xj

q (x ) [C(x ) C B ] dx
n

p
1017 1019

CB

Total doping conc

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xj

Approximate Value for RS

If C(x) >>CB for most depth x of interest and use approximation: (x) ~ constant

Rs Rs
s

1 q C( x ) dx
xj 0

1 q

This expression assumes ALL implanted dopants are 100% electrically activated

1
use the for the highest doping region which carries most of the current
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q [ R ] = ohm
or ohm/square

Example Calculations
200 keV Phosphorus is implanted into a p-Si ( CB= 1016/cm3) with a dose of 1013/cm2 . From graphs or tables , Rp =0.254 m , Rp=0.0775m (a) Find peak concentration Cp = (0.4 x 1013)/(0.0775 x10-4) = 5.2 x1017/cm3 (b) Find junction depths
(b) Cp exp[ -( xj-0.254)2/ 2 Rp2]= NB with xj in m CB Rp ( xj - 0.254)2 = 2 (0.0775)2 ln [ 5.2 1017/1016] or xj = 0.254 0.22 m ; xj1 = 0.032 m and xj2 = 0.474 m
x x j1 j2 Phosphorus Implant

p-substrate (1E16 /cm3)

(c) Find sheet resistance

From the mobility curve for electrons (using peak conc as impurity conc), n= 350 cm2 /V-sec 1 1 = Rs = 1780 /square. qn 1.610-19 350 1013
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Channeling

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Use of tilt to reduce channeling

C(x) Random component channeled component x
Random Planar Channeling Axial Channeling

Lucky ions fall into channel despite tilt

To minimize channeling, EE143tiltAli Javeyby 7oowith respect to ion beam. To minimize channeling,we tilt wafer by 7 with respect to ion beam. we wafer

Prevention of Channeling by Pre-amorphization

Step 1 Si+ High dose Si+ implantation to covert surface layer into 1 E15/cm2 amorphous Si

Si crystal

Step 2 Implantation of desired dopant into amorphous surface layer

Amorphous Si Si crystal B+

Disadvantage ::Needs an additional high-dose implantation step Disadvantage Needs an additional high-dose implantation step
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Kinetic Energy of Multiply Charged Ions

With Accelerating Voltage = x kV

Singly charged

B+ P+ As+ B++ B+++

Kinetic Energy = x keV

Doubly charged Triply charged

Kinetic Energy = 2x keV Kinetic Energy = 3x keV

Note: Kinetic energy is expressed in eV . An electronic charge q experiencing a voltage drop of 1 Volt will gain a kinetic energy of 1 eV

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Molecular Ion Implantation

Kinetic Energy = x keV B F F
Molecular ion will dissociate immediately into atomic components after entering a solid. All atomic components will have same velocity after dissociation.

BF2+
+
accelerating voltage = x kV

Velocity

vB = vF = vF

Solid Surface B has 11 amu F has 19 amu

1 2 K .E. of B = m B v B 2 1 2 K .E. of F = m F v B 2 K .E. of B 11 = 20% + 11 + 19 + 19 K .E. of BF2

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Implantation Damage

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Amount and type of Crystalline Damage

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Post-Implantation Annealing Summary

After implantation, we need an annealing step. A typical anneal will: (1) Restore Si crystallinity. (2) Place dopants into Si substitutional sites for electrical activation

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Deviation from Gaussian Theory

Curves deviate from Gaussian for deeper implants (> 200 keV)

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Shallow Implantation

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Rapid Thermal Annealing

Rapid Heating 950-1050o C >50o C/sec Very low dopant diffusion

(b)

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Dose-Energy Application Space

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