Documente Academic
Documente Profesional
Documente Cultură
Rev. 1, Sept-1999
ON Semiconductor
SWITCHMODE™ Power
Supply Reference Manual
ON Semiconductor
Formerly a Division of Motorola
SMPSRM/D
SWITCHMODE t Power Supplies
Reference Manual and Design Guide
SMPSRM/D
Rev. 1, Sept–1999
SMPSRM
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make
changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products
for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims
any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC
data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters,
including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under
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SMPSRM
Forward
Every new electronic product, except those that are battery powered, requires converting off–line
115 Vac or 230 Vac power to some dc voltage for powering the electronics. The availability of design
and application information and highly integrated semiconductor control ICs for switching power
supplies allows the designer to complete this portion of the system design quickly and easily.
Whether you are an experienced power supply designer, designing your first switching power
supply or responsible for a make or buy decision for power supplies, the variety of information
in the SWITCHMODE Power Supplies Reference Manual and Design Guide should prove
useful.
ON Semiconductor has been a key supplier of semiconductor products for switching power supplies
since we introduced bipolar power transistors and rectifiers designed specifically for switching
power supplies in the mid–70’s. We identified these as SWITCHMODE products. A switching
power supply designed using ON Semiconductor components can rightfully be called a
SWITCHMODE power supply or SMPS.
This brochure contains useful background information on switching power supplies for those who
want to have more meaningful discussions and are not necessarily experts on power supplies. It also
provides real SMPS examples, and identifies several application notes and additional design
resources available from ON Semiconductor, as well as helpful books available from various
publishers and useful web sites for those who are experts and want to increase their expertise. An
extensive list and brief description of analog ICs, power transistors, rectifiers and other discrete
components available from ON Semiconductor for designing a SMPS are also provided. This
includes our newest GREENLINE, Easy Switcher and very high voltage ICs (VHVICs), as well
as high efficiency HDTMOS and HVTMOS power FETs, and a wide choice of discrete products
in surface mount packages.
For the latest updates and additional information on analog and discrete products for power supply and
power management applications, please visit our website: (http://onsemi.com).
GREENLINE, MEGAHERTZ, POWERTAP, SENSEFET, SWITCHMODE, SMARTMOS and TMOS are trademarks of
Semiconductor Components Industries, LLC (SCILLC).
HDTMOS and HVTMOS are registered trademarks of Semiconductor Components Industries, LLC (SCILLC).
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Table of Contents
Page
“What Everyone Should Know About Switching Power Supplies’’ by Marty Brown . . . . . . . . . . . . . . . . . . . . . . . . 5
Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Linear versus Switching Power Supplies . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Basic Converters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Common Topologies . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Power Factor Correction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Quasi-Resonant Converters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Losses and Stresses within Switching Power Supplies . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Bipolar Power Transistors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Power MOSFETs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Methods of Control . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Optoisolated Voltage Feedback . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
First-Pass Selection of Semiconductors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
Other Design Considerations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
Transformers and Inductors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
Cores . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
Snubbers and Clamps . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
The Printed Circuit Board Layout . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28
Off-Line Power Supply Design and Safety Tips . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28
SMPS Examples . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
Integrated Circuits for Switching Power Supply . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30
Suggested Components for Specific Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31
Real SMPS Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36
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ǒ Ǔ
built for use in switching power supplies. which is described by:
* Vout
+
V t on
in
Linear versus Switching i
L ǒonǓ
L
Power Supplies During the “on” period, energy is being stored within
Historically, the linear regulator was the primary the core material of the inductor in the form of flux. There
method of creating a regulated output voltage. It operates is sufficient energy stored to carry the requirements of the
by reducing a higher input voltage down to the lower load during the next off period.
output voltage by linearly controlling the conductivity of The next period is the “off” period of the power
a series pass power device in response to changes in its switch. When the power switch turns off, the input
load. This results in a large voltage being placed across voltage of the inductor flies below ground and is clamped
the pass unit with the load current flowing through it. at one diode drop below ground by the catch diode.
This headroom loss (Vdrop ⋅ Iload) causes the linear Current now begins to flow through the catch diode thus
regulator to only be 30 to 50 percent efficient. That means maintaining the load current loop. This removes the
that for each watt delivered to the load, at least a watt has stored energy from the inductor. The inductor current
ǒ Ǔ
to be dissipated in heat. The cost of the heatsink actually during this time is:
makes the linear regulator uneconomical above 10 watts * VD
+
V out t
L ǒoffǓ
for small applications. Below that point, however, they off
i
are cost effective in step-down applications. L
The switching regulator operates the power devices in This period ends when the power switch is once again
the full-on and cutoff states. This then results in either turned on.
large currents being passed through the power devices Regulation is accomplished by varying the on-to-off
with a low “on” voltage or no current flowing with high duty cycle of the power switch. The relationship which
voltage across the device. This results in a much lower approximately describes its operation is:
power being dissipated within the supply. The average
switching power supply exhibits efficiencies of between
V out [ ∂ · Vin
70 to 90 percent, regardless of the input voltage. where ∂ is the duty cycle (∂ = ton/(ton + toff))
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The buck converter is capable of kilowatts of output catastrophic results. To avoid this situation, a crowbar is
power, but suffers from one serious shortcoming which placed across the output. A crowbar is a latching SCR
would occur if the power switch were to fail which is fired when the output is sensed as entering an
short-circuited, the input power source is connected overvoltage condition. The buck converter should only
directly to the load circuitry with usually produces be used for board-level regulation.
LO
SW
Vin
VD(FWD)
0 TIME
INDUCTOR CURRENT
IPK
ILOAD(AV)
(AMPS)
IMIN
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ǒ Ǔ
is described by: begins to linearly ramp downward until the energy within
the core is completely depleted. Its waveform which is
+
ǒ Ǔ
V t on
in shown in Figure 3 is determined by:
L ǒonǓ
i
L * V in
+
V out t
L ǒoffǓ
off
i
L
Once again, energy is being stored within the core The boost converter should also be only used for
material. board-level regulation.
L
D
IL
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VFLBK
SWITCH VOLTAGE
POWER POWER
SWITCH DIODE DIODE SWITCH
ON ON
(VOLTS)
ON ON
Vin
POWER
Von(SW) SWITCH
ON
TIME
INDUCTOR CURRENT
IPK
(AMPS)
ILOAD
(AV)
TIME
Common Topologies
A topology is the arrangement of the power devices fragile load circuitry. Transformer isolation should be
and their magnetic elements. Each topology has its own used in all other situations. Associated with that is the
merits within certain applications. Some of the factors need for multiple output voltages. Transformers provide
which determine the suitability of a particular topology an easy method for adding additional output voltages to
to a certain application are: the switching power supply. The companies building
1) Is the topology electrically isolated from the their own power systems are leaning toward transformer
input to the output or not. isolation in as many power supplies as possible since it
2) How much of the input voltage is placed across prevents a domino effect during failure conditions.
the inductor or transformer. The remainder of the factors involve how much stress
3) What is the peak current flowing through the the power semiconductors are being subjected to. Table 1
power semiconductors. shows the differences between the various topologies
4) Are multiple outputs required. used within switching power supplies. Figure 4
5) How much voltage appears across the power illustrates where the transformer-isolated topologies are
semiconductors. typically used within the power industry at various power
The first choice that faces the designer is whether to and voltage levels. At reduced DC input voltages and at
have input to output transformer isolation. Non-isolated higher powers, the peak currents that must be sustained
switching power supplies are typically used for by the power switch grow higher which then affects the
board-level regulation where a dielectric barrier is stress they must endure. The various areas show which
provided elsewhere within the system. Non-isolated topology best fits within that range of input voltage and
topologies should also be used where the possibility of a output power that exhibits the least amount of stress on
failure does not connect the input power source to the the power semiconductors.
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ÉÉÉÉÉÉÉÉÉÉÉÉ
ÉÉÉÉÉÉÉÉÉÉÉÉ
1000
ÉÉÉÉÉÉÉÉÉÉÉÉ
ÉÉÉÉÉÉÉÉÉÉÉÉ
DC INPUT VOLTAGE (V)
ÉÉÉÉÉÉÉÉÉÉÉÉ
ÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇ
ÉÉÉÉÉÉÉÉÉÉÉÉ
ÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇ
100
ÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇ ÉÉ
FLYBACK
ÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇ ÉÉ
HALF BRIDGE
ÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇ
FULL BRIDGE
ÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇ
10 HIGH PEAK CURRENTS,
ÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇ
RELIABILITY IS
IN JEOPARDY
ÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇ
ÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇ 10 100 1000
OUTPUT POWER (W)
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POWER L
SWITCH VFWD
VD
0 TIME
Vin
D Vout
Vin IPK
Cin Cout
CONTROL
FEEDBACK IL
0 TIME
ILOAD
IMIN
VFLBK
D D
VSW VSAT ON ON
L SW ON
D TIME
Vin 0
Cin Q Vin
CONTROL
Cout Vout IPK
IL
FEEDBACK ISW ID
0 TIME
Vin
Q VL 0 TIME
CONTROL
D
Vin Cin
– Vout
L Cout Vout
GND IL
ISW ID
0 TIME
IPK
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L
D
T SW
VSW ON
N1 N2
Cout Vout 0 TIME
Vin Cin 2Vin
VSAT
CONTROL
Q
IPRI
FEEDBACK 0 TIME
IMIN IPK
VFLBK
VSAT
SW
VSW ON
D 0 TIME
T Vin
N1 N2
Cout Vout
Vin Cin IPRI
0 TIME
CONTROL
IPK
Q
FEEDBACK ISEC
0 TIME
2Vin
L Vin SW2
Q1 D
T
VSW SW1
Cout VO TIME
D 0
Cin VSAT
Vin CONTROL
IPK
Q2 IPRI
0 TIME
IMIN
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Vin
B Cout Vout SW1
V in
2
SW2
XF N2 VSW2 0
Q1 TIME
Cin C
T VSAT
CONTROL
Vin N1 IPK
Q2 C
IPRI
0 TIME
FEEDBACK
IMIN
Vin
Cout Vout SW
V in 1-4
2 SW
XF 2-3
XF VSW2 0 TIME
Q1 Q3
Cin T VSAT
CONTROL
Vin IPK
Q2 Q4
ISW2
0 TIME
IMIN
FEEDBACK
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I I
110/220
VOLTS IN CLARGE DC
OUTPUT CSMALL
FROM WALL VOLTAGE
SOCKET
TO POWER CONTROL CLARGE
SUPPLY
POWER
NOT POWER
USED NOT USED
VOLTAGE
VOLTAGE
POWER
POWER
USED
USED
CURRENT
IAV
CURRENT
IAV
Figure 13. The Waveforms of a Capacitive Figure 14. Power Factor Corrected Input
Input Filter
The semiconductors within a power factor correction
The task is to increase the conduction angle of the AC stage have some special requirements. First, the 50/60 Hz
rectifiers and to make the resulting current waveform rectifiers now have to be ultrafast rectifiers, since fast
look as sinusoidal and in phase with the voltage current pulses are being drawn through them. The boost
waveform as possible. In this way, the power drawn by output rectifier will have to be ultrafast if the boost
the power supply from the line is maximized for real converter is operating in the continuous-mode. The
power as shown in Figure 14. power switch has to clear the diode’s reverse recovery
A popular method of accomplishing this is by using a charge. In the discontinuous-mode (Pin < 200 watts), the
boost converter prior to the actual power supply. output rectifier need not be ultrafast since there is no
Boost-mode supplies exhibit the largest input dynamic current flowing through the diode prior to the power
range of all the switching power supply topologies. Input switch turning on.
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T = Coilcraft N2881–A
Primary: 62 turns of # 22 AWG
Secondary: 5 turns of # 22 AWG
Core: Coilcraft PT2510, EE 25
Gap: 0.072″ total for a primary inductance (LP) of 320 µH
Heatsink = AAVID Engineering Inc. 590302B03600, or 593002B03400
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Quasi-Resonant Converters
Quasi-resonant technology is a field within switching make either the current or the voltage “ring” through a
power supplies where the design goal is to eliminate the half a sinusoid waveform. Since a sinusoid starts at zero
frequency dependent switching losses within the power and ends at zero, the product of the voltage and current
switch and rectifiers. Eliminating the switching losses at the starting and ending points is zero, thus has no
allows the designer to increase the operating frequency switching loss.
of the switching power supply with the goal of reducing There are two quasi-resonant methods: zero current
size and weight. Acceptance of quasi-resonant switching (ZCS) or zero voltage switching (ZVS). ZCS
technology has been slow because of some other issues is a fixed on-time, variable off-time method of control.
presented by operating at high frequencies. ZCS starts from an initial condition where the power
Schematically, quasi-resonant topologies are minor switch is off and there is no current flowing through the
modifications of the PWM topologies. A resonant tank resonant inductor. The ZCS, quasi-resonant buck
circuit has been added to the power switch section to converter is shown in Figure 15.
ILR
LR LO
CR D
Vin VSW Vout
Cin Cout
CONTROL
FEEDBACK
SWITCH
TURN-OFF
Vin
V SW
POWER SWITCH
ON
IPK
I LR
VD
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In this design, both the power switch and the catch buck converter is shown in Figure 16. Here, to control the
diode operate in a zero current switching mode. Power is power delivered to the load, the amount of “resonant off
passed to the output during the resonant periods. So to times” are varied. For light loads, the frequency is high.
increase the power delivered to the load, the frequency When the load is heavy, the frequency drops. In a typical
would increase, and vise versa for decreasing loads. In ZVS power supply, the frequency typically varies 4:1
typical designs the frequency can change 10:1 over the over the entire operating range of the supply.
ZCS supply’s operating range. There are variations in the resonant field that promote
The ZVS is a fixed off-time, variable on-time method zero switching losses such as full resonant PWM, full and
of control. Here the initial condition is when the power half-bridge topologies for the higher powers and
switch is on, and the familiar current ramp is flowing resonant transition topologies.
through the filter inductor. The ZVS, quasi-resonant
LR LO
CR D
Vin VI/P Vout
Cin FEEDBACK Cout
CONTROL
Vin
V I/P
POWER SWITCH
TURNS ON
0
V * Vout
in
IPK L )L
R O
I SW
V
in
L
R ILOAD
0
ID
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VPEAK
COLLECTOR-TO-EMITTER
VPEAK
(VOLTS)
(VOLTS)
SATURATION FALL
VOLTAGE TIME ON VOLTAGE
RISE DYNAMIC STORAGE RISE FALL
TIME SATURATION TIME TIME TIME
CLEARING IPEAK
CLEARING RECTIFIERS
COLLECTOR CURRENT
RECTIFIERS IPEAK
DRAIN CURRENT
SECOND PERIOD
INSTANTANEOUS ENERGY
BREAKDOWN
LOSS (JOULES)
PERIOD
LOSS (JOULES)
ON LOSS
SATURATION
LOSS
TURN-ON TURN-OFF LOSS TURN-ON TURN-OFF LOSS
LOSS SWITCHING LOSS LOSS SWITCHING LOSS
Figure 17. Stresses and Losses Figure 18. Stresses and Losses
within a Bipolar Power Transistor within a Power MOSFET
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VC
VC
VC VC
VC
BAKER CLAMP
One other consideration is from where one draws the winding is used to develop this voltage.
current to drive the base of the transistor. If a voltage of For more information, refer to Application Note
greater than 5 volts is used, then the loss associated with AN875 (“Power Transistor Safe Operating Area: Special
driving the base is large. Usually a low voltage auxiliary Considerations for Switching Power Supplies”).
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Power MOSFETs
Power MOSFETs are becoming increasingly more be a well bypassed voltage source. This is because the
popular for use as power switches within switching gate of a MOSFET resembles a capacitor which must be
power supplies. MOSFETs have some advantages over charged and discharged in that 100 nS. So it must be
the bipolar transistor such as switching five to ten times capable of sourcing and sinking at least 1.5 ampere peak
faster than bipolar transistors and being easier to drive currents. Bipolar totem pole drives fill this need. The
and use. To the novice designer, it is as close to a logic MC34151 (inverting) and the MC34152 (non-inverting)
switching device as one can get. MOSFET driver ICs provide the drive that MOSFETs
Power MOSFETs are voltage driven devices. That is need to switch fast with an input from a logic-level
its conductivity is determined by a voltage provided on source. The MC33153 and MC33154 are specially
its gate. MOSFETs can be driven directly from controller designed gate drivers for IGBTs. See Figure 21 for some
ICs that have totem pole output drivers with less than of the common gate drives for MOSFETS.
100 nS switching times. The drive source, however, must
+10 V
+5 V
MC34151
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Rectifiers
Choosing the best rectifiers for any switching power graphically multiply the current and voltage waveforms
supply design is an important process. The rectifiers are from the oscilloscope times the frequency of operation.
the largest source of loss within switching power The reverse recovery loss is where the rectifier
supplies. To choose the the best rectifier, one must becomes reverse biased, and current appears to actually
understand the parameters that affect their efficiency. flow backwards through the rectifier. It is actually the
The most important rectifier parameters are the minority carriers being swept from the P-N junction.
forward voltage drop (Vf) and the reverse recovery time Nonetheless, it is a significant loss. This loss is
(trr). The forward voltage drop creates a loss just by minimized by selecting the rectifier with the shortest
having a voltage across the device while high currents are reverse recovery time (trr).
flowing through it. Table 3 shows a summary of the various rectifier
Its conduction loss is described by: technologies that are appropriate in switching power
supplies. For low voltage outputs, Schottky rectifiers are
t on
recommended because of their low forward voltage drop
P
*
fwd loss
+ fop · s Vfwd dt and their negligible reverse recovery time. For higher
t+0
output voltages, the ultrafast recovery rectifiers are
recommended because of their very fast reverse recovery
The typical method of measuring this loss is to times.
Methods of Control
There are two popular methods of control for PWM pulsewidth modulated waveform in order to drive the
switching power supplies. These center around the power switches in a pulsewidth modulated on/off
parameters sensed within the switching supply; current fashion. The most common voltage-mode control is a
or voltage can be sensed to provide consistent output fixed frequency method of control as shown in Figure 22.
voltages. ON Semiconductor offers switching power Examples of this type of controller are the MC34060A,
supply controller ICs which provide a choice of the MC34166 and TL494.
control method.
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REF LR
This method of control is very fast and provides a very
ONE CR good transient response time; that is, the time it takes to
VCO
SHOT
respond to changes on either the supply input or output.
It tends to be a very robust control method, responding
FAULT
quickly to short-circuit and overload conditions without
VOLTAGE FEEDBACK failures to the supply. Examples of these parts are the
UC3842/3/4/5, MC34023, MC34025 and the MC34129.
Figure 23. Variable Frequency,
Voltage-Mode Control Gated Oscillator Control
Gated oscillator control is a unique, but effective
method of control which is used on several of the
Voltage-mode control is the traditional method.
ON Semiconductor control ICs. The typical control
Although it provides good output regulation (good
circuit of this type is shown in Figure 25. It is a form of
response to changes in the output load), it is somewhat
variable frequency control with pulse-by-pulse
sluggish to changes in the input voltage, and has trouble
overcurrent limiting. The IC has a fixed frequency
sensing a core saturation condition.
oscillator, but its output is gated on or off depending upon
whether the output is below the needed output or above
Current-Mode Control
the needed output. It exhibits the robustness of
Current-mode control is somewhat new. It senses not current-mode control since each pulse is current limited.
only the output voltage, but the amount of current that Examples of these types of parts are the UA78S40,
flows through the inductor or transformer. When the MC34063A and MC34163.
output demands more power, the controller allows more
current to enter the inductor or transformer. Conversely, OVERCURRENT
SENSE
if the input voltage suddenly changes, it is immediately
detected by the controller and responds, keeping the Vin OUTPUT
output voltage at its required level. The common method OSC
of current-mode control is called turn-on with clock CT
current-mode control. This means that the frequency of on
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22
SMPSRM
DIELECTRIC
BARRIER
MOC8101 RLIM
R1
ERROR
AMP
0.01 10K
Cout
TL431
COMPENSATION R2
Vout
RETURN
Figure 26. Opto Isolated Voltage Feedback for Off-line Switching Power Supplies
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23
SMPSRM
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SMPSRM
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25
SMPSRM
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SMPSRM
Figure 28. Common Methods for Controlling Voltage Spikes and/or RFI
CLAMP
SNUBBER
VOLTAGE (VOLTS)
ORIGINAL
WAVEFORM
t, TIME (µsec)
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27
SMPSRM
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28
SMPSRM
Page
Some of these circuits may have a more complete application note, spice model information or even an evaluation board
available. Consult ON Semiconductor’s website (http://onsemi.com) or local sales office for more information.
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29
SMPSRM
Figure 30. Intergrated Ciruits for
OUTPUT FILTERS
DC–DC
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CONVERSION Vref
30
PWM
REF
FIXED MC33160 MC78TXX
OSC
MC78FCxx MC33263 ADJUSTABLE
MC78LCxx MC33275 LM317L
STARTUP CONTROL VOLTAGE MC78BCxx MC33375 LM2931C
FEEDBACK
MC78PCxx MC78Mxx LP2951
MC33362 MC33264 MC79Mxx LM317M
MC33363A/B TL431/A/B LM2931 MC33267 LM337M
MC33365 MC44603A MC33065 MC33202 LP2950 MC33268 MC33269
MC33369 – MC33374 MC44604 MC33023 MC3341 LP2951 MC33269 LM317
MC44605 MC33025 MC78Lxx MC78xx LM337
SWITCHING REGULATORS MMBZ52xx
MC44608 MC33066 VOLTAGE MC79Lxx MC79xx LM350
SCG’s Integrated Solutions MMSZ52xx MC33067 FEEDBACK
MC33364
MMSZ46xx VOLTAGE REGULATION
UC3842B – UC3845B
STARTUP CONTROL
Monitor
Power
15”
RWM Video
Monitor On Screen Display Driver
12C BUS Generator
MCU 10101100101
R
Overlayed
RGB RGB
SYNC PROCESSOR V_Sync
G CRT
V_Sync
1280 H_Sync
x
H_Sync 1024
RGB B
HC05
CPU
CORE MEMORY
PWM
or 12C R
Vertical
G Driver
RGB
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B
DOWN
USB HUB H–Driver TR
IRF510/11
31
MTD6N10/15
UP Geometry Correction H–Driver
MC33370
Line Driver
MC33363A/B
USB & Auxiliary Standby
AC/DC IRF630 / 640 / 730 /740 / 830 / 840
Power Supply Damper Diode
V_Sync Timebase Processor H–Output TR MUR10150E
DC TO DC MFW16212 MUR5150E
Line H_Sync CONTROLLER MJL16218 MUR8100E
A.C. MTP8N60E MUR4100E
UC3842/3 MUR460
PFC Devices IRF630/740
MC34262 MTP6P20E
S.M.P.S
MC33368 Controller
MC33260
UC3842
MC44603/5
MC44608
SMPSRM
Sync MUR420
Signal MUR440
MUR460 Figure 31. 15” Monitor Power Supplies
SMPSRM
Start–up Ultrafast
Rectifier +
Switch
Rectifier
Load
+ Bulk
Storage
Capacitor
PWM MOSFET
Control
AC IC n–outputs
Line Prog.
Prec.
PWM Switcher Ref
Table 5.
Part # Description Key Parameters Samples/Prod.
MC33262 PFC Control IC Critical Conduction PFC Controller Now/Now
MC33368 PFC Control IC Critical Conduction PFC Controller + Internal Start–up Now/Now
MC33260 PFC Control IC Low System Cost, PFC with Synchronization Now/Now
Capability, Follower Boost Mode, or Normal Mode
MC33365 PWM Control IC Fixed Frequency Controller + 700 V Start–up, 1 A Now/Now
Power Switch
MC33364 PWM Control IC Variable Frequency Controller + 700 V Start–up Switch Now/Now
MC44603A/604 PWM Control IC GREENLINE, Sync. Facility with Low Standby Mode Now/Now
MC44605 PWM Control IC GREENLINE, Sync. Facility, Current–mode Now/Now
MC44608 PWM Control IC GREENLINE, Fixed Frequency (40 kHz, 75 kHz and Now/2Q99
100 kHz options), Controller + Internal Start–up, 8–pin
MC33370–4 High Voltage Switching Regulator 700 V, Fixed Frequency PWM, Voltage Mode Now/Now
Integrated Power Switch Circuit
MTP6N60E MOSFET 600 V, 6 A, Rds (on) = 1.2 V Now/Now
MTW14N50E MOSFET 500 V, 14 A, Rds (on) = 0.4 V Now/Now
MSR860 Ultrasoft Rectifier 600 V, 8 A, trr = 55 ns, Ir max = 1 uA Now/Now
MUR440 Ultrafast Rectifier 400 V, 4 A, trr = 50 ns, Ir max = 10 uA Now/Now
MRA4006T3 Fast Recovery Rectifier 800 V, 1 A, Vf = 1.1 V @ 1.0 A Now/Now
MR856 Fast Recovery Rectifier 600 V, 3 A, Vf = 1.25 V @ 3.0 A Now/Now
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SMPSRM
Start–up Ultrafast
Rectifier +
Switch
Rectifier
Load
+ Bulk
Storage
Capacitor
PWM MOSFET
Control
AC IC n–outputs
Line Prog.
Prec.
PWM Switcher Ref
Table 6.
Part # Description Key Parameters Samples/Prod.
MC33363A/B/65 PWM Control IC Controller + 700 V Start–up & Power Switch, < 15 W Now/Now
MC33370–4 High Voltage Switching Regulator 700 V Fixed Frequency PWM, Voltage Mode Now/Now
Integrated Power Switch Circuit
MC33364 PWM Control IC Critical Conduction Mode, SMPS Controller Now/Now
TL431B Program Precision Reference 0.4% Tolerance, Prog. Output up to 36 V, Temperature Now/Now
Compensated
MTP6N60E MOSFET 600 V, 6 A Rds (on) = 1.2 Now/Now
MSRD620CT Ultrasoft Rectifier 200 V, 6 A, trr = 55 ns, Ir max = 1 uA Now/Now
MR856 Fast Recovery Rectifier 600 V, 3 A, Vf = 1.25 V @ 3.0 A Now/Now
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SMPSRM
Lo Lo
Voltage
+ Regulation + + +
V in Co Vout V in Co Vout
Load Control IC Load
Control IC
– – – –
Table 7.
Part # Description Key Parameters Samples/Prod.
MC33263 Low Noise, Low Dropout 150 mA; 8 Outputs 2.8 V – 5 V; SOT 23L 6 Lead Now/Now
Regulator IC Package
MC33269 Medium Dropout Regulator IC 0.8 A; 3.3; 5, 12 V out; 1 V diff; 1% Tolerance Now/Now
MC33275/375 Low Dropout Regulator 300 mA; 2.5, 3, 3.3, 5 V out Now/2Q99
LP2950/51 Low Dropout, Fixed Voltage IC 0.1 A; 3, 3.3, 5 V out; 0.38 V diff; 0.5% Tolerance Now/Now
MC78PC CMOS LDO Linear Voltage Iout = 150 mA, Available in 2.8 V, 3 V, 3.3 V, 5 V; SOT Now/Now
Regulator 23 – 5 Leads
LM2574/75/76 Control IC w/integrated FET 0.5 – 3 A; 7 – 40 V in; 3.3, 5, 12, 15 & adj out Now/Now
MC33470 Synchronous Buck Regulator IC Digital Controlled; Vcc = 7 V; Fast Response Now/Now
MMDFS2P102R2 P–Ch FET w/Schottky in SO–8 20 V, 2 A, 160 mW FET/1 A, Vf = 0.46 V Schottky Now/Now
MMDFS6N303R2 N–Ch FET w/Schottky in SO–8 30 V, 6 A, 35 mW FET/3 A, Vf = 0.42 V Schottky Now/Now
MMDFS3P303R2 P–Ch FET w/Schottky in SO–8 30 V, 3 A, 100 mW FET/3 A, Vf = 0.42 V Schottky Now/Now
MBRM140T3 1A Schottky in Powermite 40 V, 1 A, Vf = 0.43 @ 1 A; Ir = 0.4 mA @ 40 V Now/Now
Package
MBRA130LT3 1A Schottky in SMA Package 40 V, 1 A, Vf = 0.395 @ 1 A; Ir = 1 mA @ 40 V Now/Now
MBRS2040LT3 2A Schottky in SMB Package 40 V, 2 A, Vf = 0.43 @ 2 A; Ir = 0.8 mA @ 40 V Now/Now
MMSF3300 Single N–Ch MOSFET in SO–8 30 V, 11.5 A(1), 12.5 mW @ 10 V Now/Now
MMSF3302 Single N–Ch MOSFET in DPAK 30 V, 18.3 A(1), 10 mW @ 10 V Now/Now
MTSF2P03HD Single P–Ch MOSFET in 30 V, 2.7 A, 90 mW @ 10 V Now/Now
Micro 8 Package
MGSF3454X/V Single N–Ch MOSFET in 30 V, 4.2 A, 65 mW @ 10 V Now/Now
TSOP–6
MGSF3441X/V Single P–Ch MOSFET in 20 V, 3.3 A, 100 mW @ 4.5 V Now/Now
TSOP–6
(1) Continuous at TA = 25° C, Mounted on 1” square FR–4 or G10, VGS = 10 V t 10 seconds
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34
Part No. V RRM (V) I o (A) Package V RRM (V) I o (A)
Part No. Package
+3.3 V 14 A
+ Part No. V RRM (V) I o (A) Package
Part No. V RRM (V) I o (A) Package
IN540x Series 400 X1000 3 Axial MBR2535CTL
MBR2545CT
35
45
25
25
TO–220
TO–220
+5 V 22 A MBR3045ST 45 30 TO–220
+ MBRF2545CT 45 25 TO–220
Mains + MBR3045PT 45 30 TO–218
Voltage 230 Vac
MBR3045WT 45 30 TO–247
Stand–by 5 V 0.1 A
Part No. V RRM (V) I o (A) Package
+12 V 6 A
MBR2060CT 60 20 TO–220
+ MBR20100CT 100 20 TO–220
Package MBR20200CT 200 20 TO–220
Part No.
MUR1620CT 200 16 TO–220
MC33369 DIP8 MUR1620CTR 200 16 TO–220
MC33370 DIP8/TO–220 –5 V 0.5 A MURF1620CT 200 16 TO–220
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MC33371 DIP8/TO–220
MC33372 DIP8/TO–220 Part No. V RRM (V) I o (A) Package
+
MC33373 DIP8/TO–220 MBRS340T3 40 3 SMC
PWM MBRD340 40 3 DPAK
35
MOSFET
Part No. V DSS (V) I p (A) Package
SMPSRM
MR7xxx Series 600 1000 6 Axial
1N4937 600 1 Axial
Figure 35. Typical 200 W ATX Forward Mode SMPS
SMPSRM
D1
180 to 264 D3 C3 Z1 + + R4 TP8 VR1
1.5KE200A 15 k
or 90 to 132 R1 C8 C9
VAC Input D2 + 3.9 k D5 470 mF 470 mF +
C1 MUR160 C4 R6
D4 1/2 IC2 C10
33 mF R8
D6 0.1 mF 22 k
250 V 330 k CNY17F 150 mF
TP7 R7
S1 C2 +MUR
+ R9 C7 120 8.2 k C11
33 mF IC3
250 V 330 k TP1 10 mF R5 1.0 mF
TL431 15 k
TP9 L2
1/2 IC2 D8 3.3 mH VR2
CNY17F–2 MBR350 5k 3.3 V/2 A
MC + + +
33374
TP2 C12 C13 C14 C15
TP4
TP5 680 mF 680 mF 150 mF 1.0 mF
R3 TP1
R2
3.6 PB1 C16
100
C6 + C5 ON/OFF 1.0 nF
47 mF 0.01 mF
TP3
Figure 36. 15 W 3.3/5 V Two–Outputs SMPS
Features:
Reduced part count, low–cost solution.
ON Semiconductor Advantages:
Complete semiconductor solution based around highly integrated MC33374T.
Devices:
Part Number Description
MC33374T High Voltage Power Switching Regulator
1.5KE200A Transient Voltage Suppressor (200 V)
MUR160 Axial Lead Ultrafast Recovery Rectifier (600 V)
MBR350 Axial Lead Schottky Rectifier (50 V)
TL431 Programmable Precision Reference
1N5406 General Purpose Rectifier (600 V)
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SMPSRM
1 C5 100 k
R6 1N4934
8 D6
D2 D4 +
+ 36 V 100
ZERO CURRENT 1.2 V C4
FILTER
92 to DETECTOR T
RFI
TIMER R 16 V 230 V/
10 MTP
7 0.35 A
DRIVE 8N50E
DELAY Q1 +
OUTPUT 220
RS 10
C3
LATCH
2.2 M 1.0 M
R5 20 k 4 R2
1.5 V OVERVOLTAGE 0.1
10 pF
COMPARATOR R7
CURRENT
SENSE
COMPARATOR + 1.08 V
ref
ERROR AMP
10 mA +
MULTIPLIER Vref 1
0.01 7.5 k 3
C2 R3 11 k
QUICKSTART R1
6 2
0.68
C1
Figure 37. 80 W Power Factor Controller
Features:
Reduced part count, low–cost solution.
ON Semiconductor Advantages:
Complete semiconductor solution based around highly integrated MC33262.
Devices:
Part Number Description
MC33262 Power Factor Controller
MTP8N50E t
TMOS Power MOSFET
MUR130 Axial Lead Ultrafast Recovery Rectifier (300 V)
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SMPSRM
Vcc
FUSE 0.33 µF
1N5404 + L1
10 µF/
MAINS
AC LINE 100 nF FILTER
16 V MUR460 Vout
+ 100 µF/
450 V
1 8
MTP8N50E
MC33260
100 nF 2 7
10 W
3 6
4 5
12 kW
1 MW
120 pF
45 kW 1 MW
0.5 W/3 W
ON Semiconductor advantages:
Very low component count.
No Auxiliary winding required.
High reliability.
Complete semiconductor solution.
Significant system cost reduction.
Devices:
Part Number Description
MC33260 Power Factor Controller
MTP8N50E t
TMOS Power Field Effect Transistor (N–Channel)
MUR460 Ultrafast Recovery Rectifier (600 V)
1N5404 General Purpose Rectifier (400 V)
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SMPSRM
C1 + C2 + C9 3.3 mH
0.047 mF 10 mF
L1 DB1 C3
47 pF 330 mF R11 C11 + C12
2.2 k W 100 mF 1 mF
P6KE200A U2
R1 T
3.9 k W R13
MUR160 Np Ns 68 W
MUR120 R4
47 W R5
100 W
+ Naux 1N5235B
C6
10 mF
5 4 CNY17F–2
C5 1 nF 2N3904
MC33370P
U2 R6 R8
6 3
C4 47 mF 2.2 W 1W
7 2 +
R2 39 W R7 R9
8 1 C8 22 W 22 W
2.2 nF
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SMPSRM
22 µH
RFI 1 nF/1 kV 90 V/0.1 A
FILTER
MR856
+ +
1 nF/500 V 4.7 MW
47 µF 47 µF
1W Vin 120 pF
D1 – D4
3.9 kW/6 W
1N5404
4.7 kW
150 µF
400 V
1N4148
1N4934 MCR22–6
1 nF/500 V 2W 100 nF
22 kW
1N4934
SYNC MR856 45 V/
47 µF + + 1A
25 V
3.3 kW
MR856 1000 µF
1 µH
1.2 kW 10 pF 47 kW SMT31
9 8
2.2 nF
10 7 MR852 15 V/
+
4.7 µF 2.2 kW 470 pF 0.8 A
+ 11 6 1000 µF
8.2 kW 4.7 µF + Lp
MC44605P
10 V
12 5
22 470
560 kW
4.7 µF+ 150 kW
kW
nF 1N4148
10 V
13 4 470 pF –10 V/
MR852 +
2.2 nF MTP8N50E 0.3 A
56 kW
14 3
10 W 220 µF
1N4934
15 2 1 kW
270 W
16 1
470 W MBR360 8 V/
0.1 W
+
56 kW 1.5 A
10 kW 4700 µF
MOC8107 100 W
1.8 MW
10 kW 96.8 kW
Vin 100 nF
TL431
12 V
2.7 kW
2.7 kW
1 kW 100 nF
BC237B VmP
FROM mP
0: STAND–BY
1: NORMAL MODE
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SMPSRM
Features:
Off power consumption: 40 mA drawn from the 8 V output in Burst mode.
Vac (110 V) ³ about 1 watt
Vac (240 V) ³ about 3 watts
Efficiency (pout = 85 watts)
Around 77% @ Vac (110 V)
Around 80% @ Vac (240 V)
Maximum Power limitation.
Over–temperature detection.
Winding short circuit detection.
ON Semiconductor Advantages:
Designed around high performance current mode controller.
Built–in latched disabling mode.
Complete semiconductor solution.
Devices:
Part Number Description
MC44605P t
High Safety Latched Mode GREENLINE Controller
For (Multi) Synchronized Applications
MTP8N50E t t
TMOS E–FET Power Field Effect Transistor (N–Channel)
TL431 Programmable Precision Reference
MR856 Fast Recovery Rectifier (600 V)
MR852 Fast Recovery Rectifier (200 V)
MBR360 Axial Lead Schottky Rectifier (60 V)
BC237B NPN Bipolar Transistor
1N5404 General–Purpose Rectifier (400 V)
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SMPSRM
95 Vac to
265 Vac
F1
C30 FUSE 1.6 A
100 nF
250 Vac
RFI
LF1 FILTER
C19
1 nF/1 kV
R21
4.7 MW
D1–D4
1N4007
C1 R16
3.8 MW 220 mF 68 kW/2 W C15 220 pF L3
22 µH
C4–C5 115 V/0.45 A
1 nF/1 kV R7 D13 C26
68 kW/1 W
D12
1N4148 4.7 nF
MR856 C20 D23
C16 47 µF 47 µF
D15
100 µF
1N4148 D7
L1
IN4937
C9 R19 1 µH
27 kW
15 V/1.5 A
100 nF
9 8
C11 D5
C8 560 pF C21
100 pF R22 MR854
10 7 1000 µF
C10 1 µF
C12 1 kW
R3 1 nF
22 kW
11 6
15 kW
MC44603AP
R18 11 V/0.5 A
12 5
5.6 kW
180 kW D8
13 4 C22
C7 Q1 MR854
R15 1000 µF
1 MW 10 nF MTA4N60E
14 3
R20 47W R8
15 2 1 kW OREGA TRANSFORMER
R4 R9 150W G6191–00
3.9 kW THOMSON TV COMPONENTS
16 1
R5 R33 C14
2.2 kW 0.31 W 220 pF
R14 R13
47 kW 10 kW
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SMPSRM
Features:
70 W output power from 95 to 265 Vac.
Efficiency
@ 230 Vac = 86%
@ 110 Vac = 84%
"
Load regulation (115 Vac) = 0.8 V.
"
Cross regulation (115 Vac) = 0.2 V.
Frequency 20 kHz fully stable.
ON Semiconductor Advantages:
DIP16 or SO16 packaging options for controller.
Meets IEC emi radiation standards.
A narrow supply voltage design (80 W) is also available.
Devices:
Part Number Description
MC44603AP Enhanced Mixed Frequency Mode
t
GREENLINE PWM Controller
MTA4N60E t t
TMOS E–FET Power Field Effect Transistor (N–Channel)
MR856 Fast Recovery Rectifier (600 V)
MR854 Fast Recovery Rectifier (400 V)
1N4007 General Purpose Rectifier (1000 V)
1N4937 General Purpose Rectifier (600 V)
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SMPSRM
F1
C31
100 nF
RFI C19
47283900 R F6 2N2F–Y
FILTER
C3
1 nF R16 4.7 MW/4 kV
C11
D1–D4 220 pF/500 V
1N5404
+ C5 R1 112 V/0.45 A
220 mF 22 kW 14 1
C4 400 V 5W D18 MR856 +
1 nF J3
C12 C13 2
C6
12 47 µF/250 V 100 nF
D5 47 nF 16 V/1.5 A
1N4007 D6 630 V 3
R5 100 kW MR856
R7 47 kΩ C17 120 pF
6 1 1
J4
D12 DZ1
D7 2
1N4934 MCR22–6
1N4148
7 11 8 V/1 A
1 8 2 D9 MR852 3
+ C7 C14 +
22 mF
MC44608P75
R3
0.27 W
R21 47 W ON OFF
R9
100 kW
OPT1
R10 ON = Normal mode
10 kW OFF = Pulsed mode
C19
33 nF
R11 DZ3
47 kW 10 V DZ2 R8
TL431CLP 2.4 kW
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SMPSRM
Features:
Off power consumption: 300mW drawn from the 8V output in pulsed mode.
Pin = 1.3W independent of the mains.
Efficiency: 83%
Maximum power limitation.
Over–temperature detection.
Demagnetization detection.
Protection against open loop.
ON Semiconductor Advantages:
Very low component count controller.
Fail safe open feedback loop.
Programmable pulsed–mode power transfer for efficient system stand–by mode.
Stand–by losses independent of the mains value.
Complete semiconductor solution.
Devices:
Part Number Description
MC44608P75 t
GREENLINE Very High Voltage PWM Controller
MTP6N60E TMOS Power Field Effect Transistor (N–Channel)
TL431 Programmable Precision Reference
MR856 Fast Recovery Rectifier (600 V)
MR852 Fast Recovery Rectifier (200 V)
1N5404 General Purpose Rectifier (400 V)
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SMPSRM
130 to 350 V DC +
R1 D1 C3 8 V at 400 mA
+ +
220 mF/
C2
150 1N4148 10 V
220 mF/ –
D3 10 V
R3 C10
R13 MBRS240LT3
220 k 1 nF D4
100 k D5 R2
1N4937 150
1N4148
R1 M1 R11
+ MMG05N60D 113 k
120 k
C3
R5
10 mF/ IC1
350 V 1k MOC8103
MC14093
R5
1.2 k 8 7 6 5
+
C8
MC33341 1 mF
+
1 2 3 4 D4
C7 R9 C4 12 V
10 mF 47 nF
470 R12
D2 C5 R2 20 k
R9
12 V 1 nF Q1 C9 3.9
100 Q5
MBT3946DW 1 nF
R10
0V
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SMPSRM
RFI
FILTER R1
1W/5W R3
C4–C7 4.7 kW
1 nF / 1000 V
C32 220 pF
120 V / 0.5 A
C1 R20
D1–D4 100 mF 22 kW D8
D5
1N4007 5W
1N4934 MR856
C30 C31
C2 100 mF 0.1 mF
220 mF
C17
47 nF
R2
68 kW / 2 W L1 D7
C29 220 pF
R4 1 mH MR856
27 kW Laux 28 V / 1 A
9 8
C16 R9 D6
100 pF 1 kW
D9
C9 820 pF 1N4148 MR852
10 7 C27 C28
C15 R5
C10 1 mF 1 nF 1.2 kW 1000 mF 0.1 mF
11 6 LP
R7
180 kW C14
MC44603P
16 1 C23 220 pF
R18 R19 R14 8V/1A
27 kW 10 kW 2 X 0.56 W//
C13
100 nF D11
MR852
C21 C22
1000 mF 0.1 mF
R17
10 kW R24
270 W R23
MOC8101 117.5 kW
R21 C19
10 kW 100 nF D14
1N4733
C20
R25 C12 33 nF
1 kW 6.8 nF TL431
R22
2.5 kW
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SMPSRM
Features:
Off–line operation from 180 V to 280 Vac mains.
Fixed frquency and stand–by mode.
Automatically changes operating mode based on load requirements.
Precise limiting of maximum power in fixed frequency mode.
ON Semiconductor Advantages:
Built–in protection circuitry for current limitation, overvoltage detection, foldback, demagnetization and softstart.
Reduced frequency in stand–by mode.
Devices:
Part Number Description
MC44603P t
Enhanced Mixed Frequency Mode GREENLINE PWM Controller
MTP6N60E TMOS t E–FET t Power Field Effect Transistor (N–Channel)
MR856 Fast Recovery Rectifier (600 V)
MR852 Fast Recovery Rectifier (200 V)
TL431 Programmable Precision Reference
1N4733A Zener Voltage Regulator Diode (5.1 V)
1N4007 General Purpose Rectifier (1000 V)
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SMPSRM
C11 4.7 nF
1200 V
PTUBE =
55 W
L1 1.6 mH T1A
FT063
Q2 Q3
BUL44D2 BUL44D2
R13 R14
2.2 R 2.2 R
C9 R11 R12
C8
2.2 nF 4.7 R 4.7 R
2.2 nF
DIAC
C6 10 nF C7 10 nF
NOTES: * All resistors are ± 5%, 0.25 W
D4 unless otherwise noted
R10 * All capacitors are Polycarbonate, 63 V,
T1B T1C ± 10%, unless otherwise noted
10 R
D3 1N4007
C5 0.22 mF
R9
330 k
C4 47 mF
+
450 V
R7 1.8 M P1 20 k
C15 100 nF
Q1
D2 MUR180E MTP4N50E R6 1.0 R
3 1 D8 D9
C16
630 V
2 R5 1.0 R 47 nF
T2 AGND
R4 22 k D7 D6
7
5 4
+ C3 1.0 mF FILTER
MC34262
2
C2
U1
D1 330 mF 6 C17 47 nF
MUR120 25 V 1
8 630 V
R3 3 C1 10 nF
100 k/1.0 W
R2 1.2 M FUSE
LINE
R1 12 k 220 V
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SMPSRM
Features:
Easy to implement circuit to avoid thermal runaway when fluorescent lamp does not strike.
ON Semiconductor Advantages:
Power devices do not have to be oversized – lower cost solution.
Includes power factor correction.
Devices:
Part Number Description
MC34262 Power Factor Controller
MTP4N50E TMOS E–FET Power Field Effect Transistor (N–Channel)
MUR120 Ultrafast Rectifier (200 V)
BUL44D2 Bipolar Transistor* for Electronic Lamp Ballast (400 V)
1N4007 General Purpose Diode (1000 V)
1N5240B Zener Voltage Regulator Diode (10 V)
ON Semiconductor’s H2BIP process integrates a diode and bipolar transistor for a single package solution.
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(Evaluation Board)
Application: Lamp Ballast with Power Factor Correction
22 m F/450V
100 nF/450 V
D19 R35 R1
+
C26
C26
470 k
R31
1N4148 10 R D6 820 k R27
C15
+ 470 k
22 m F/25 V C17 15 V GND D12 1N4148
GND
D10 C24
1N4148
D8 MUR160
GND 100 nF/450 V
C20 100 nF
D5
100 nF U2 R19 Q4
R17
MTP8N50E
OR
C12 220 nF MC33157DW
GND Vz 15 V 22 R
C16 100 nF 1 16
C30 T1 Vdd Vboot D13 1N4148
Figure 46. Lamp Ballast with Power Factor Correction
100 k
+
10 R
D4 R10 330 k 2 15
R7
Vref VHO
R26
GND 22 m F/25 V MUR160
C11 3 14 R20
R11 100 k CPH VOUT
R36 4 13 D14 100 R C22
47 nF R12 RPH N/C 1500 pF/
1k 5 12 1N4148 500 V
C13 820 k CSWP VLO
0R
R5
Q2 R23 GND
C5 22 nF Q3
GND
R21
100 k
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10 GND C18
5
L3
8
1.5 mH
1M
Vdd Vsync R8 8 DTA STD 9 100 nF R29
100 k
R14 GND
R4
3 7
Osc Gdrive 82 k GND 33 k
R22
270 pF
10 nF
U2 R34 GND
51
D16 1N4148
R25
10 k
MC33260 GND 0R
R6 R15 GND D17 R33 1M
220 nF
2 IS 4
Vctrl
C19
C25 100 nF
C8
10 k 0R 1M
3
4
4
15 k
R28
33 k
R30
GND
C7
1
6
FLUO TUBE
FLUO TUBE
R24
0R
TL1
TL2
GND GND
BRIDGE 2A/800 V
680 nF/ 630 V
1N4148
R2
C28
C29
D13
F1
C4
68 k/0.5 W
2
1
1
LINE/P D1 R16
L2
100 nF/630 V
100 nF/630 V
D2
2A – TD FUSE 2.2 M
25 m F/35 V
R18
C2
C3
1N4007 +
1N4007
2.2 M
C31
D3
1N4148
10 nF
C27
22 k
D18
R32
LINE/N
FILTER
1 R/2 W
SEMAP
R32
27 mH/1 A
GND
SMPSRM
GND
SMPSRM
Features :
Evaluation board includes all functions for an electronic ballast
Includes power factor correction
ON Semiconductor advantages:
Very low component count
Built–in 2% voltage reference eliminates the need for external compensation over the temperature range
Complete semiconductor solution
Devices:
Part Number Description
MC33157DW Electronic Ballast Controller
MC33260 Power Factor Controller
MTP8N50E TMOS Power Field Effect Transistor (N–Channel)
MTP6N50E TMOS Power Field Effect Transistor (N–Channel)
MUR160 Axial Lead Ultrafast Recovery Rectifier (600 V)
MUR460 Ultrafast Recovery Rectifier (600 V)
1N4007 General Purpose Rectifier (1000 V), 2 A/800 V Bridge
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SMPSRM
F1 +
3.0 A 1N5406
T1
D1 C2 Z1 R4 R6
+ +
92 to 276 D3 50 pF 1.5KE200A 270 75 k
VAC INPUT R2 C8 C11
D5
D2 + 3.9 k 470 470 +
C1 MUR160
D4 100 C7 15 V/3.5 A
1/2 C12 DC OUTPUT
0.1
IC2 150
+ MOC
8103
1/2 IC2 C13
MOC8103 IC3 R5
TL431B 1.0
15 k
–
MC C14
IC1 1.0 nF
33374
R3
3.6 R7
+ 100 PB1
C5 ON/OFF TOGGLE
C4
50
0.01
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SMPSRM
T0.2x
J1 D1
1 F1 250R
2 + 1N4140 R4 5V
LINE C1 R8 D8 C5 + 4 kW
10 mF/350 V
100 D9 J2
10 V R1 1N4140 T1 1 mF
5 6 BZX84/5 V
1
220 D3 100 mF +
R2 4 D7 2
+ 7 C5
R5
4 kW
3
D2 C2 20 mF MURS320T3
D4 47 k R14
R6
BZX84/18V 1N4140 22 k
47 k
R3 C4 U2 8 7 6 5
1 nF
VSI
CSI
DO
VCC
22 k D6 2
U1 8 7 1 1N4140 D5 MURS160T3
Line VCC ICD MC33341
R4 Q1
CMP
GND
6
CTA
MC33364 MTD1N60E R13
CSI
5
GND 2 330 12 k
C3 R7 1 2 3 4
Vref FL
2.7 C7
C3 4 3 1SO1 33 nF R12
5 2 R10
100 nF R11 10 k
100 R
MOC0102
1 0.25
4
Figure 48. AC–DC Battery Charger – Constant Current with Voltage Limit
Features:
Universal ac input.
9.5 Watt capability for charging portable equipment.
Light weight.
Space saving surface mount design.
ON Semiconductor Advantages:
Off the shelf components
Spice model available for MC33341
Devices:
Part Number Description
MC33341 Power Supply Battery Charger Regulator Control Circuit
MC33364 Critical Conduction SMPS Controller
MURS160T3 Surface Mount Ultrafast Rectifier (600 V)
MURS320T3 Surface Mount Ultrafast Rectifier (200 V)
MTD1N60E TMOS t
Power MOSFET DPAK N–Channel (600 V)
BZX84C5V1LT1 Zener Voltage Regulator Diode (5.1 V)
BZX84/18V Zener Voltage Regulator Diode (MMSZ18T1)
Transformer For details consult AN1600
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These older Application Notes may contain part numbers that are no longer available, but the applications information
may still be helpful in designing an SMPS. Most of these App Notes are available through the Literature Distribution
Center for ON Semiconductor at 800–344–3860 or 303–675–2175 or by email at ONlit@hibbertco.com. However, as
we transition away from Motorola SPS, some of them will still be available only through the Motorola SPS Mfax
system at 602–244–6591 or on the Motorola SPS website at http://mot–sps.com.
AN873 Understanding Power Transistor Dynamic Behavior: dv/dt Effects on Switching RBSOA
AN875 Power Transistor Safe Operating Area: Special Consideration for Switching Power Supplies
AN913 Designing with TMOS Power MOSFETs
AN915 Characterizing Collector–to–Emitter and Drain–to–Source Diodes for Switchmode Applications
AN918 Paralleling Power MOSFETs in Switching Applications
AN920 Theory and Applications of the MC34063 and mA78S40 Switching Regulator Control Circuits
AN929 Insuring Reliable Performance from Power MOSFETs
AN952 Ultrafast Recovery Rectifiers Extend Power Transistor SOA
AN1040 Mounting Considerations for Power Semiconductors
AN1043 Spice Model for TMOS Power MOSFETs
AN1080 External–Sync Power Supply with Universal Input Voltage Range for Monitors
AN1083 Basic Thermal Management of Power Semiconductors
AN1090 Understanding and Predicting Power MOSFET Switching Behavior
AN1320 300 Watt, 100 kHz Converter Utilizes Economical Bipolar Planar Power Transistors
The following Application Notes are available directly from the ON Semiconductor website
(http://onsemi.com).
AN1327 Very Wide Input Voltage Range, Off–line Flyback Switching Power Supply
AN1520 HDTMOS Power MOSFETs Excel in Synchronous Rectifier Applications
AN1541 Introduction to Insulated Gate Bipolar Transistor
AN1542 Active Inrush Current Limiting Using MOSFETs
AN1543 Electronic Lamp Ballast Design
AN1547 A DC to DC Converter for Notebook Computers Using HDTMOS and Synchronous Rectification
AN1570 Basic Semiconductor Thermal Measurement
AN1576 Reduce Compact Fluorescent Cost with Motorola’s IGBTs for Lighting
AN1577 Motorola’s D2 Series Transistors for Fluorescent Converters
AN1593 Low Cost 1.0 A Current Source for Battery Chargers
AN1594 Critical Conduction Mode, Flyback Switching Power Supply Using the MC33364
AN1600 AC–DC Battery Charger – Constant Current with Voltage Limit
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AN1631 Using PSPICE to Analyze Performance of Power MOSFETs in Step–Down, Switching Regulators
Employing Synchronous Rectification
AN1680 Design Considerations for Clamping Networks for Very High Voltage Monolithic Off–Line PWM
Controllers
AN1681 How to Keep a Flyback Switch Mode Supply stable with a Critical–Mode Controller
Brochures
Device Models
Device models for SMPS circuits (MC33363, MC33365 and MC33370), power transistors, rectifiers and other
discrete products are available through ON Semiconductor’s website or by contacting your local sales office.
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SMPSRM
Baliga, B. Jayant,
Power Semiconductor Devices, PWS Publishing Co., Boston, 1996. 624 pages.
Brown, Marty,
Practical Switching Power Supply Design, Academic Press, Harcourt Brace Jovanovich, 1990. 240 pages.
Brown, Marty
Power Supply Cookbook, EDN Series for Design Engineers, ON Semiconductor Series in Solid State Electronics,
Butterworth–Heinmann, MA, 1994. 238 pages
Chrysiss, G. C.,
High Frequency Switching Power Supplies: Theory and Design, Second Edition, McGraw–Hill, 1989. 287 pages
Gottlieb, Irving M.,
Power Supplies, Switching Regulators, Inverters, and Converters, 2nd Edition, TAB Books, 1994. 479 pages.
Kassakian, John G., Martin F. Schlect, and George C. Verghese,
Principles of Power Electronics, Addison–Wesley, 1991. 738 pages.
Lee, Yim–Shu,
Computer–Aided Analysis and Design of Switch–Mode Power Supplies, Marcel Dekker, Inc., NY, 1993
Lenk, John D.,
Simplified Design of Switching Power Supplies, EDN Series for Design Engineers, Butterworth–Heinmann, MA,
1994. 221 pages.
McLyman, C. W. T.,
Designing Magnetic Components for High Frequency DC–DC Converters, KG Magnetics, San Marino, CA, 1993.
433 pages, 146 figures, 32 tables
Mitchell, Daniel,
Small–Signal MathCAD Design Aids, e/j Bloom Associates, 115 Duran Drive, San Rafael, Ca 94903–2317,
415–492–8443, 1992. Computer disk included.
Mohan, Ned, Tore M. Undeland, William P. Robbins,
Power Electronics: Converter, Applications and Design, 2nd Edition, Wiley, 1995. 802 pages
Paice, Derek A.,
Power Electronic Converter Harmonics, Multipulse Methods for Clean Power, IEEE Press, 1995. 224 pages.
Whittington, H. W.,
Switched Mode Power Supplies: Design and Construction, 2nd Edition, Wiley, 1996 224 pages.
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SMPSRM
In Brief . . .
In most electronic systems, some form of voltage reg- Page
ulation is required. In the past, the task of voltage regula- DC–DC Converters with Inductor . . . . . . . . . . . . . . . . 62
tor design was tediously accomplished with discrete Off–Line SMPS Controllers . . . . . . . . . . . . . . . . . . . . . 72
devices, and the results were quite often complex and Power Factor Controllers . . . . . . . . . . . . . . . . . . . . . . . 88
costly. Today, with bipolar monolithic regulators, this Voltage References . . . . . . . . . . . . . . . . . . . . . . . . . . . . 93
task has been significantly simplified. The designer now Linear Voltage Regulators . . . . . . . . . . . . . . . . . . . . . . 95
LDO Linear Voltage Regulators . . . . . . . . . . . . . . 103
has a wide choice of fixed, low dropout and adjustable
MOSFET/IGBT Drivers . . . . . . . . . . . . . . . . . . . . . . . . 114
type voltage regulators. These devices incorporate many Dedicated Drivers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 117
built–in protection features, making them virtually Dedicated Power Management Controllers . . . . . . . 121
immune to the catastrophic failures encountered in older
discrete designs. in the areas of size and weight reduction, improved
The switching power supply continues to increase in efficiency, and the ability to perform voltage step–up,
popularity and is one of the fastest growing markets in the step–down, and voltage–inverting functions.
world of power conversion. They offer the designer sev- ON Semiconductor offers a diverse portfolio of full fea-
eral important advantages over linear series–pass regula- tured switching regulator control circuits which meet the
tors. These advantages include significant advancements needs of today’s modern compact electronic equipment.
Voltage
References
Linear Voltage
Regulators
LDO Linear
Voltage
Regulators
MOSFET/
IGBT Drivers
Dedicated
Drivers
Dedicated Power
Mgmnt Controllers
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SMPSRM
Voltage
References
Linear Voltage
Regulators
LDO Linear
Voltage
Regulators
MOSFET/
IGBT Drivers
Dedicated
Drivers
Dedicated Power
Mgmnt Controllers
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SMPSRM
Input Output
Voltage Output Switch Temp.
Range Voltage Current Control Range
Device (V) (V) (A) Scheme Topology Package (°C) Features
MC34060A 4 to 42 Adjustable 0.5 PWM Step–Up/Down DIP–14/SO–14 0 to 70, External
& Inverting –40 to +85 Switch
Transistor
TL494/TL594 7 to 40 Adjustable 0.2 PWM Step–Up/Down DIP–16/SO–16 0 to 70, External
& Inverting –25 to +85 Switch
Transistor
µA78S40 2.5 to 40 Adjustable 1.5 PFM Step–Up/Down DIP–16 0 to 70, Internal
& Inverting –40 to +85 Switch
Transistor
MC34063A 3.0 to 40 Adjustable 1.5 PFM Step–Up/Down DIP–8/SO–8 0 to 70, Internal
& Inverting –40 to +85 Switch
Transistor
MC34163 2.5 to 40 Adjustable 3.0 PFM Step–Up/Down DIP–16/SO–16 0 to 70, Internal
& Inverting –40 to +85 Switch
Transistor
MC34165 3.0 to 65 Adjustable 1.5 PFM Step–Up/Down DIP–16/SO–16 0 to 70, Internal
& Inverting –40 to +85 Switch
Transistor
MC34166 7.5 to 40 Adjustable 3.0 PWM Step–Up/Down 5 Pin TO–220, 0 to 70, Internal
& Inverting 5 Pin D2PAK –40 to +85 Switch
Transistor
MC34167 7.5 to 40 Adjustable 5.0 PWM Step–Up/Down 5 Pin TO–220, 0 to 70, Internal
& Inverting 5 Pin D2PAK –40 to +85 Switch
Transistor
LM2574 4.75 to 45 3.3, 5, 0.5 PWM Step–Down DIP–8, –40 to Internal
12, 15 & SO–16WB +125 Switch
Adjust. Transistor,
On/Off
Control
LM2575 4.75 to 45 3.3, 5, 1.0 PWM Step–Down 5 Pin TO–220, –40 to Internal
12, 15 & 5 Pin D2PAK +125 Switch
Adjust. Transistor,
On/Off
Control
LM2576 4.75 to 45 3.3, 5, 3.0 PWM Step–Down 5 Pin TO–220, –40 to Internal
12, 15 & 5 Pin D2PAK +125 Switch
Adjust. Transistor,
On/Off
Control
MC33463–K 0.9 to Vout 3, 3.3, 5 0.250 VFM Step–Up SOT–89 –30 to +80 Internal
Switch
Transistor
MC33463–L 0.9 to Vout 3, 3.3, 5 0.050 VFM Step–Up SOT–89 –30 to +80 External
Switch
Transistor
MC33466–J 0.9 to Vout 3, 3.3, 5 0.250 PWM Step–Up SOT–89 –30 to +80 Internal
Switch
Transistor
MC33466–L 0.9 to Vout 3, 3.3, 5 0.050 PWM Step–Up SOT–89 –30 to +80 External
Switch
Transistor
PWM: Pulse Width Modulation PFM: Pulse Frequency Modulation VFM: Variable Frequency Modulation
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ORDERING INFORMATION
Output Operating Package
Device Voltage Type Temperature Range (Tape/Reel)
MC33463H–30KT1 3.0 Int. Switch SOT–89
MC33463H–33KT1 3.3 (Tape)
MC33463H–50KT1 5.0
TA = –30°
30° to +80°C
MC33463H–30LT1 3.0 Ext. Switch SOT–89
MC33463H–33LT1 3.3 Drive (Tape)
MC33463H–50LT1 5.0
Other voltages from 2.5 V to 7.5 V, in 0.1 V increments are available. Consult factory for information.
L
MC33463H–XXKT1 MC33463H–XXLT1
D Vin
L Cin
D
3 2 VO
Vin VLx Limitier
Lx Output 2 VO
Cin CO Rb 3
Q Drive Output
Drive EXT CO
VFM
VFM Cb Controller
Controller
1 Gnd
1 Gnd
XX Denotes Output Voltage
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MC33466H
TA = –30° to +80°C, SOT–89
The MC33466 series are micropower switching external transistor is provided.
voltage regulators, specifically designed for handheld Due to the low bias current specifications, these
and laptop applications, to provide regulated output devices are ideally suited for battery powered computer,
voltages using a minimum of external parts. A wide consumer, and industrial equipment where an extension
choice of output voltages are available. These devices of useful battery life is desirable.
feature a very low quiescent bias current of 15 µA typical. MC33466 Series Features:
The MC33466H–XXJT1 series features a highly • Low Quiescent Bias Current of 15 µA
accurate voltage reference, an oscillator, a pulse width
• High Output Voltage Accuracy of ±2.5%
modulation (PWM) controller, a driver transistor (Lx), an
error amplifier and feedback resistive divider. • Low Startup Voltage of 0.9 V at 1.0 mA
The MC33466H–XXLT1 is identical to the • Soft–Start = 500 µs
MC33466H–XXJT1, except that a drive pin (EXT) for an • Surface Mount Package
ORDERING INFORMATION
Output Operating Package
Device Voltage Type Temperature Range (Tape/Reel)
L
MC33466H–XXJT1 Vin MC33466H–XXLT1
D Cin
L D
VO
Vin 3 2
VLx Limiter VO
Lx Output 2
Cin CO
(Voltage
Drive Feedback) Rb Output
3 CO
(Voltage
Q Drive Feedback)
PWM EXT
Controller
Cb PWM
Phase Controller
50 kHz Comp
Phase
Oscillator Vref Comp
50 kHz
Soft–Start Oscillator Vref
Soft–Start
1 Gnd
XX Denotes Output Voltage 1 Gnd
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ORDERING INFORMATION
Operating
Device Temperature Range Package
MC33470DW TA = 0° to +75°C SO–20L
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17 VID1 Over
Voltage Temp
Identification 16 VID2 Digitally Programmed
Code Vref
Reference
Input 15 VID3 VCC
14 VID4
7
Oscillator Over Current
Detect Imax
190 µA
2.5 V 90 µA 2
VCC
1.5 V PV
En CC
PWM 20
Comparator S
10 µA Q G1
9
R Q 8
SS
+ Delay
0.96 Vref PWM Ifb
Latch
1
Vref G2
+
800 µ 1.04 Vref 3
6
PGnd
OTA Error Amp
Sense
20 µA
+
1.04 Vref
13
R 14
Power + Q
Good 0.93 Vref Delay S Fault
1.14 Vref
AGnd 4 Compensation 10
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Unregulated
DC Input +Vin 3.1 V Internal ON/OFF
ON/OFF Output R2
Regulator Voltage Versions (Ω)
5 3
Cin 3.3 V 1.7 k
1 5.0 V 3.1 k
12 V 8.84 k
Feedback 15 V 11.3 k
Current
R2 Fixed Gain Limit For adjustable version
Error Amplifier Comparator R1 = open, R2 = 0 Ω
Driver
R1
1.0 k Freq Latch L1
Shift Output Vout
18 kHz
1.0 Amp 7
Sig Gnd 1.235 V Switch Pwr Gnd D1 Cout
Band–Gap 52 kHz Thermal
2 Reset 4 Load
Reference Oscillator Shutdown
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Unregulated
DC Input +Vin 3.1 V Internal ON/OFF
ON/OFF Output R2
Regulator Voltage Versions (Ω)
1 5
Cin 3.3 V 1.7 k
4 5.0 V 3.1 k
12 V 8.84 k
Feedback 15 V 11.3 k
Current
R2 Fixed Gain Limit For adjustable version
Error Amplifier Comparator R1 = open, R2 = 0 Ω
Driver Regulated
R1
Freq Latch Output
1.0 k L1
Shift Output Vout
18 kHz
1.0 Amp 2
1.235 V Switch Gnd D1 Cout
Band–Gap 52 kHz Thermal
Reference Reset 3 Load
Oscillator Shutdown
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SMPSRM
Voltage
References
Linear Voltage
Regulators
LDO Linear
Voltage
Regulators
MOSFET/
IGBT Drivers
Dedicated
Drivers
Dedicated Power
Mgmnt Controllers
http://onsemi.com
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SMPSRM
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Table 6. Very High Voltage Single–Ended Controller with On–Chip Power Switch
This monolithic high voltage switching regulator is specifically designed to operate from a rectified ac line voltage
source. Included are an on–chip high voltage power switch, active off–line startup circuitry and a full featured PWM
controller with fault protection.
MOSFET Integrated
@ V in = 92V to
Power Switch
276 VAC Line
Temperature
Frequency
Additional
Max Drain
Oscillator
Features
RDS(on)
Start–Up
265 VAC
Package
Scheme
Current
Control
Voltage
Device
Range
Peak
MC33362 ONLY Yes 500 V 2A 4.4 Ω 20W Active S PWM, Adjustable DIP–16 *25 to
110 V On–Chip Fixed up to SO–16WB +125°C
Opera– 250 V Frequency 300 kHz
tion FET S Voltage
Mode
MC33363A Yes Yes 700 V 1A 7.5 Ω 14W Active S PWM, Adjustable DIP–16 *25 to
On–Chip Fixed up to SO–16WB +125°C
500 V Frequency 300 kHz
FET S Voltage
Mode
MC33365 Yes Yes 700 V 1A 15 Ω 8W Active S PWM, Adjustable DIP–16 *25 to Bulk Capacitor
On–Chip Fixed up to +125°C Voltage
450 V Frequency 300 kHz Sensing
FET S Voltage Capability to
Mode Sense an
AC Line
Brown–Out
MC33369 Yes Yes 700 V 0.5A 12 Ω 12W Active S PWM, Fixed @ DIP–8 *25 to Programmable
On–Chip Fixed 100 kHz TO–220 5 +125°C State Controller
700 V Frequency for Converter
FET
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SMPSRM
MOSFET Integrated
@ V in = 92V to
Power Switch
276 VAC Line
Temperature
Frequency
Additional
Max Drain
Oscillator
Features
RDS(on)
Start–Up
265 VAC
Package
Scheme
Current
Control
Voltage
Device
Range
Peak
MC33370 Yes Yes 700 V 0.9A 12 Ω 25W Active S PWM, Fixed @ DIP–8 * 25 to Programmable
On–Chip Fixed 100 kHz TO–220 5 +125°C State Controller
700 V Frequency for Converter
FET
MC33371 Yes Yes 700 V 1.5A 6.8 Ω 45W Active S PWM, Fixed @ DIP–8 * 25 to Programmable
On–Chip Fixed 100 kHz TO–220 5 +125°C State Controller
700 V Frequency for Converter
FET
MC33372 Yes Yes 700 V 2A 4.8 Ω 60W Active S PWM, Fixed @ DIP–8 * 25 to Programmable
On–Chip Fixed 100 kHz TO–220 5 +125°C State Controller
700 V Frequency for Converter
FET
MC33373 Yes Yes 700 V 2.7A 3.8 Ω 75W Active S PWM, Fixed @ DIP–8 * 25 to Programmable
On–Chip Fixed 100 kHz TO–220 5 +125°C State Controller
700 V Frequency for Converter
FET
MC33374 Yes Yes 700 V 3.3A 3.0 Ω 90W Active S PWM, Fixed @ DIP–8 * 25 to Programmable
On–Chip Fixed 100 kHz TO–220 5 +125°C State Controller
700 V Frequency for Converter
FET
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MC44605P
TA = –25° to +85°C, DIP–16
The MC44605 is a high performance current mode • High Current Totem Pole Output
controller that is specifically designed for off–line • Undervoltage Lockout with Hysteresis
converters. The MC44605 has several distinguishing • Low Output dV/dT for Low EMI
features that make it particularly suitable for • Low Startup and Operating Current
multisynchronized monitor applications. Safety/Protection Features
The MC44605 synchronization arrangement • Soft–Start Feature
enables operation from 16 kHz up to 130 kHz. This • Demagnetization (Zero Current Detection)
product was optimized to operate with universal ac Protection
mains voltage from 80 V to 280 V, and its high current • Overvoltage Protection Facility Against Open Loop
totem pole output makes it ideally suited for driving a • EHT Overvoltage Protection (E.H.T.OVP):
power MOSFET. Protection Against Excessive Amplitude
The MC44605 protections provide well controlled, Synchronization Pulses
safe power management. Safety enhancements detect • Winding Short Circuit Detection (W.S.C.D.)
four different fault conditions and provide protection • Limitation of the Maximum Input Power (M.P.L.):
through a disabling latch. Calculation of Input Power for Overload Protection
Current or Voltage Mode Controller • Over Heating Detection (O.H.D.): to Prevent the
• Current Mode Operation Up to 250 kHz Output Power Switch from Excessive Heating
Switching Frequency Latched Disabling Mode
• Inherent Feed Forward Compensation • When one of the following faults is detected: EHT
• Latching PWM for Cycle–by–Cycle Current overvoltage, Winding Short Circuit (WSCD),
Limiting excessive input power (M.P.L.), power switch over
• Oscillator with Precise Frequency Control heating (O.H.D.), a counter is activated
• Externally Programmable Reference Current • If the counter is activated for a time that is long
• Secondary or Primary Sensing (Availability of Error enough, the circuit gets definitively disabled. The
Amplifier Output) latch can only be reset by removing and then
• Synchronization Facility re–applying power
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MC44608
TA = –25° to +85°C, DIP–8
The MC44608 is a high performance voltage mode • Undervoltage Lockout with Hysteresis
controller designed for off–line converters. This high • On Chip Oscillator Switching Frequency 40, 75, or
voltage circuit that integrates the start–up current source 100kHz
and the oscillator capacitor, requires few external com- • Secondary control with Few External Components
ponents while offering a high flexibility and reliability. Protections
The device also features a very high efficiency • Maximum Duty Cycle Limitation
stand–by management consisting of an effective Pulsed • Cycle by Cycle Current Limitation
Mode operation. This technique enables the reduction of • Demagnetization (Zero Current Detection)
the stand–by power consumption to approximately 1W Protection
while delivering 300mW in a 150W SMPS. • “Over VCC Protection” Against Open Loop
• Programmable Low Inertia Over Voltage Protection
• Integrated Start–Up Current Source
against open loop
• Lossless Off–Line Start–Up
• Internal Thermal Protection
• Direct Off–Line Operation
• Fast Start–Up GreenLine Controller
• Pulsed Mode Techniques for a Very High Efficiency
General Features Low Power Mode
• Flexibility • Lossless Startup
• Duty Cycle Control • Low dV/dT for Low EMI Radiations
ORDERING INFORMATION
Operating
Device Temperature Range Package
MC44608P40
Plastic
Pl ti
MC44608P75 TJ = –25° to +85°C
DIP 8
DIP–8
MC44608P100
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SMPSRM
Demag Vi
1 8
DMG +
UVLO2 Start–up
– 50 mV 10 mA
/20 mV Source
>24 mA >120 m A
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SMPSRM
20 W Off–Line Converter
AC Input
Startup Input 1
Regulator Startup
Output Mirror VCC
Reg
8 3
DC Output
UVLO Overvoltage
Protection Input
6
RT OVP 11
PWM Latch 16
Osc
CT 7 Power Switch
S Driver
Drain
Q
R
PWM
LEB
Ipk
Thermal Compensation
EA 10
Voltage Feedback
Input
Gnd 4, 5, 12, 13
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AC Input
Startup Input 1
Startup
Regulator Mirror VCC
Output
Reg
8 3
DC Output
UVLO
Overvoltage
6 Protection Input
RT OVP 11
PWM Latch 16
Osc
CT 7 Power Switch
S Driver
Drain
Q
R
PWM
LEB
Ipk
Thermal Compensation
EA 10
Voltage
Feedback
Gnd 4, 5, 12, 13 Input
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ORDERING INFORMATION
Operating
Device Temperature Range Package
MC33363BDW SOP–16L
TJ = –25°
25° to +125°C
MC33363BP DIP–16
Simplified Application
AC Input
Startup Input 1
Regulator Startup
Output Mirror VCC
Reg
8 3 DC Output
UVLO Overvoltage
Protection
6 Input
RT OVP 11
PWM Latch 16
Osc
CT 7 Power Switch
S Driver
Drain
Q
R
PWM
LEB
Ipk
Thermal Compensation
9
EA 10
Voltage
Feedback
Gnd 4, 5, 12, 13 Input
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Line
Restart
Delay
PWM VCC
Comparator VCC
FB UVLO
S
Leading Vref Bandgap Vref
R Q
Current Edge R UVLO Reference
Sense Blanking Gnd
Watchdog
Zero Timer
ZC Det Current Gate
Detector Thermal Frequency
Shutdown Optional
Clamp
Frequency
Clamp
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SMPSRM
ORDERING INFORMATION
Operating
Device Temperature Range Package
MC33365P TJ = –25° to +125°C DIP–16
Simplified Application
AC Input
Startup Input 1
Regulator Startup
Output Mirror
VCC
Reg
8 3 DC Output
UVLO
6 BOK
RT BOK 11
PWM Latch 16
Osc
CT 7 Power Switch
S Driver
Drain
Q
R
PWM
LEB
Ipk
Thermal Compensation
9
EA 10
Voltage
Feedback
Gnd 4, 5, 12, 13 Input
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–
Power
5 Switch Drain
VCC Istart
This device contains 391 active transistors.
1 State Control
Input
Programmable
State Controller 4
Feedback Power
Input MOSFET
Pulse Width Modulator
Switch
2 Controller
On/Off
+
Ground 3
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Voltage
References
Linear Voltage
Regulators
LDO Linear
Voltage
Regulators
MOSFET/
IGBT Drivers
Dedicated
Drivers
Dedicated Power
Mgmnt Controllers
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SMPSRM
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SMPSRM
MC33262D, P
TA = –40° to +105°C, DIP–8, SO–8
The MC34262, MC33262 series are active power Also included are protective features consisting of an
factor controllers specifically designed for use as a overvoltage comparator to eliminate runaway output
preconverter in electronic ballast and in off–line power voltage due to load removal, input undervoltage lockout
converter applications. These integrated circuits feature with hysteresis, cycle–by–cycle current limiting,
an internal startup timer for stand alone applications, a multiplier output clamp that limits maximum peak
one quadrant multiplier for near unity power factor, zero switch current, an RS latch for single pulse metering, and
current detector to ensure critical conduction operation, a drive output high state clamp for MOSFET gate
transconductance error amplifier, quickstart circuit for protection. These devices are available in dual–in–line
enhanced startup, trimmed internal bandgap reference, and surface mount plastic packages.
current sensing comparator, and a totem pole output
ideally suited for driving a power MOSFET.
1 100 k
1N4934
MC34262
36 V 100
Zero Current 1.2 V
85 to 265 RFI Detector
Vac Filter 6.7 V 22 k
1.6 V T
UVLO
2.5 V MUR460
Reference VO
14 V 400 V/
0.44 A
Timer R 16 V
10 MTP
Drive 14N50E
Delay Output 330
10
RS
Latch
1.3 M 20 k 1.6 M
Overvoltage 10 pF 0.1
Current Sense 1.5 V Comparator
Comparator
1.08 Vref
Error Amp
10 µA
Multiplier Vref
0.01 12 k
10 k
Quickstart
0.68
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1N5406
C5
D2 D4 1.0
92 to EMI D1 D3
270 Vac Filter
16 Line
Vref
Vref MC33368
R8 R13
15 V 1N4744
1.0 M VCC D8 51 D6
RD UVLO 1N4934
C9 2 Q Timer R 12 C4
Zero
330 µF AGnd Current 13/8.0 100
8 Detect 7 15 V
RS Latch T
1.5 V ZCD R4
R 1.2/1.0
1.5 V 22 k
R MUR460
S Gate D5
S Q Q1
S 11 C3
Set Dominant R11 330
10
Overvoltage PGnd MTW20N50E
Comparator Vref
R5 10 R2
1.3 M R10 820 k
Low 13 10 k
1.08 x Vref Frequency
Load Detect Clamp FC C7
9 470 pF
Quickstart LEB R9
Leading Edge 6 10
Blanking CS C8
Mult R7
0.001
5.0 V 0.1
5
Reference
Multiplier
R3 C2
10.5 k 0.01
4 Comp 1 Vref 3 FB
C1 Vref
C6
1.0 R1
0.1
10 k
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ORDERING INFORMATION
Device Temperature Range Package
MC33260P –40° to +105°C Plastic DIP–8
Typical Application
D1 . . . D4 1 µF
D1
Vcc Load
1 8 + C1
(SMPS, Lamp
Q1 Ro
MC33260
2 7 Ballast, . . .)
Vcontrol
3 6
Rcs
4 5
sync
CT
Rs
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Voltage References
In Brief . . .
ON Semiconductor’s line of precision voltage refer- Page
ences is designed for applications requiring high initial ac- Precision Low Voltage References . . . . . . . . . . . . . . . 94
curacy, low temperature drift, and long term stability. Ini-
tial accuracies of ±1.0%, and ±2.0% mean production line
adjustments can be eliminated. Temperature coefficients
of 25 ppm/°C max (typically 10 ppm/°C) provide excel-
lent stability. Uses for the references include D/A conver-
ters, A/D converters, precision power supplies, voltmeter
systems, temperature monitors, and many others.
Voltage
References
Linear Voltage
Regulators
LDO Linear
Voltage
Regulators
MOSFET/
IGBT Drivers
Dedicated
Drivers
Dedicated Power
Mgmnt Controllers
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SMPSRM
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SMPSRM
In Brief . . .
ON Semiconductor’s broad portfolio of voltage regu- Page
lators covers the whole spectrum of current levels, from Linear Voltage Regulators . . . . . . . . . . . . . . . . . . . . . . 96
low current levels of 80 mA to very high current levels of Micropower Voltage Regulators
up to 5 A, and in a very wide selection of voltages. All for Portable Applications . . . . . . . . . . . . . . . . . . . . . . 100
these products are available in multiple package versions Special Voltage Regulators . . . . . . . . . . . . . . . . . . . . 107
Special Regulators . . . . . . . . . . . . . . . . . . . . . . . . . . . 107
with a strong emphasis on surface mount packages, from
TSOP–5 or SOT23–5 leads up to D2PAK 5 leads.
New developments have included low dropout, more
accuracy, and less noise using bipolar technology or
CMOS technology for a reduction of current
consumption.
Voltage
References
Linear Voltage
Regulators
LDO Linear
Voltage
Regulators
MOSFET/
IGBT Drivers
Dedicated
Drivers
Dedicated Power
Mgmnt Controllers
http://onsemi.com
95
SMPSRM
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96
SMPSRM
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SMPSRM
LP2951C*/AC* 3.0 1.0/0.5 100 28.75 0.38 0.04/0.02 0.04/0.02 ±1.0 SO–8,
Micro–8,
DIP–8
3.3 SO–8,
Micro–8,
DIP–8
5.0 SO–8,
Micro–8,
DIP–8
LM2935* 5.0/5.0 5.0/5.0 500/10 60 0.45/0.55 1.0 1.0 – TO–220,
D2PAK
Unless otherwise noted, TJ = 0° to +125°C
* TJ = –40° to +125°C
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Adjustable Output
ON Semiconductor offers a broad line of adjustable offering a wide range of output voltages for industrial and
output voltage regulators with a variety of output current communications applications. The three–terminal
capabilities. Adjustable voltage regulators provide users devices require only two external resistors to set the
the capability of stocking a single integrated circuit output voltage.
Adjustable Regulators
LM317L/B* 2.0–37 100 40 1.9 0.07 1.5 ±0.35 SO–8, TO–92
LM2931C* 3.0–24 100 37 0.16 1.12 1.0 ±2.5 SO–8, D2PAK,
TO–220, TO–92
LP2951C*/AC* 1.25–29 100 28.75 0.38 0.04/0.02 0.04/0.02 ±1.0 SO–8, DIP–8,
Micro–8
SO–8, DIP–8,
Micro–8
SO–8, DIP–8,
Micro–8
MC1723C# 2.0–37 150 38 2.5 0.5 0.2 ±0.033 DIP–14, SO–14
LM317M/B* 1.2–37 500 40 2.1 0.04 0.5 ±0.35 DPAK, TO–220
LM337M/B* –(1.2–37) 500 40 1.9 0.07 1.5 ±0.3 TO–220
MC33269* 1.25–19 800 18.75 1.0 0.3 0.5 ±0.4 SO–8, DPAK,
TO–220, SOT–223
LM317/B* 1.2–37 1500 40 2.25 0.07 1.5 ±0.35 TO–220, D2PAK
LM337/B* –(1.2–37) 1500 40 2.3 0.07 1.5 ±0.3 TO–220, D2PAK
LM350/B* 1.2–33 3000 35 2.7 0.07 1.5 ±0.5 TO–220
Unless otherwise noted, TJ = 0° to +125°C
* TJ = –40° to +125°C
# TA = 0° to +70°C
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ORDERING INFORMATION 2 3
Operating Vin VO
Output Temperature
Device Voltage Range Package
MC78LC30HT1 3.0
MC78LC33HT1 3.3
SOT–89
MC78LC40HT1 4.0
MC78LC50HT1 5.0 TA = –30° to
MC78LC30NTR 3.0 +80°C
MC78LC33NTR 3.3 Vref
SOT–23
MC78LC40NTR 4.0
MC78LC50NTR 5.0 1
Other voltages from 2.0 to 6.0 V, in 0.1 V increments, are available Gnd
upon request. Consult factory for information.
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ORDERING INFORMATION 2 3
Operating Vin VO
Output Temperature
Device Voltage Range Package
MC78FC30HT1 3.0
MC78FC33HT1 3.3 TA = –30° to
SOT–89
MC78FC40HT1 4.0 +80°C
MC78FC50HT1 5.0
Other voltages from 2.0 to 6.0 V, in 0.1 V increments, are available
upon request. Consult factory for information.
Vref
Gnd
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Gnd
CE 5
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ORDERING INFORMATION
Operating
Device Temperature Range Package
MC78PC28NTR
MC78PC30NTR SOT–23
TA = –40° to +85°C
MC78PC33NTR 5 Leads
MC78PC50NTR
Other voltages are available. Consult your ON Semiconductor
representative.
Block Diagram
MC78PCxx
1 5
VIN VOUT
3 2
CE GND
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1 Thermal
Shutdown ON/OFF Shutdown
3 4
Bypass Band Gap Output
Reference
* Current Limit
* Antisaturation
* Protection
2 5
GND GND
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1 8
Vin VO
Thermal and
Anti–Sat 7
Protection
2 Base
On/Off
Rint
Adj
1.23 V
Vref 52.5 k
3 MC33264 6
On/Off
Gnd
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ORDERING INFORMATION
Operating
Device Temperature Range Package
LT1585ACT TO–220
LT1585ACM D2PAK
TA = 0° to 125°C
LT1585ACT–1.5 TO–220
LT1585ACM–1.5 D2PAK
+
–
Thermal
Limit
Vout
Adjust
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Low Dropout Voltage Low voltage differential regulator featuring dual positive 5.0 V TO–220, D2PAK LM2935
Regulator outputs; switched currents in excess of 750 mA and 10 mA standby
current. Fixed quiescent current is less than 3.0 mA.
Low Dropout Voltage Positive 5.0 V, 500 mA regulator with on–chip power–up–reset TO–220, D2PAK MC33267
Regulator circuit with externally programmable delay, current limit, and thermal
shutdown.
Low Dropout Voltage Positive 3.3 V, 5.0 V, 12 V, 800 mA regulator. SO–8, DPAK, MC33269
Regulator SOT–223, TO–220
Low Dropout Voltage Positive regulator with 5 outputs fixed 2.8 V and 13 V. TSSOP–16 MC33765
Regulator
Special Regulators
Voltage Regulator/Supervisory
Table 13. Voltage Regulator/Supervisory
Vout Vin
(V) IO (V)
(mA) Regline Regload TA Suffix/
Device Min Max Max Min Max (mV) Max (mV) Max (°C) Package
MC34160 4.75 5.25 100 7.0 40 40 50 0 to +70 DIP–16,
SO–16L
SO 16L
MC33160 –40 to +85
MC33267 4.9 5.2 500 6.0 26 50 50 –40 to +105 TO–220,
D2PAK
* These ICs are intended for powering cellular phone GaAs power amplifiers and can be used for other portable applications as well.
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MC33160P, DW
TA = –40° to +85°C, DIP–16, SO–16L
The MC34160 series is a voltage regulator and supervi- reset comparator, power warning comparator with pro-
sory circuit containing many of the necessary monitoring grammable hysteresis, and an uncommitted comparator
functions required in microprocessor based systems. It is ideally suited for microprocessor line synchronization.
specifically designed for appliance and industrial applica- Additional features include a chip disable input for low
tions offering the designer a cost effective solution with standby current, and internal thermal shutdown for over
minimal external components. These integrated circuits temperature protection.
feature a 5.0 V, 100 mA regulator with short circuit current These devices are contained in a 16 pin dual–in–line
limiting, pinned out 2.6 V bandgap reference, low voltage heat tab plastic package for improved thermal conduction.
VCC Regulator
14
Thermal 0.913R 11 Output
Shutdown
0.01R Reset
7
R
Power
Power
8 Warning
Sense 9
IH
Hysteresis
IH “On”/“Off”
Adjust 10
Noninverting
Input 2
Inverting Comparator
6 Output
Input 1
Gnd 4, 5,12, 13
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Input Output
1 5
3.01
R 20 µA
Reference Reset
1.25 V Reset
0.03 2
R +
3.8 V
R Delay
Thermal
Delay
Over 200 4
Current +
Detector
1.25 V
Ground 3
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Output
Voltage (Vout)
VZ 3 8 CT 4
Supply
Voltage (VCC)
Preregulator
6.0 V
1
2.0 µA
Reset
6
+
2.0 V
Regulator –
Reset Sense
Sense Vs Output
Input (So)
(Si)
7
2
+
1.23 V
–
1.23 Vref Sense
5 Gnd
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ORDERING INFORMATION
Operating
Device Voltage Version Temperature Range Package
MC33765DTB, R2
MC33765DTB–30, R2
2.8 V Fixed
3.0 V Fixed
TA = *40° to +85°C TSSOP–16
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330 nF
Common
Enable
(3)
ON/OFF 1 Enable Current
Limit VCC1
–
Voltage 1.25 V + (14)
BYPASS
Reference VOUT1
100 nF Temp.
Shut. 100 nF
(4)
ON/OFF 2 Enable Current
Limit VCC1
–
+ (13)
VOUT2
Temp.
Shut. 100 nF
(5)
ON/OFF 3 Enable Current
Limit VCC1
–
+ (12)
VOUT3
Temp.
Shut. 1.0 mF
(6)
ON/OFF 4 Enable Current
Limit VCC2
–
+ (11)
VOUT4
Temp.
100 nF
Shut.
(7)
ON/OFF 5 Enable Current
Limit VCC2
–
+ (9)
VOUT5
Temp.
100 nF
Shut.
(8)
GND
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SCSI Regulator
Table 14. SCSI Regulator
Vout Vin
(V) (V)
Isink Regline Regload TJ
Device Min Max (mA) Min Max (%) (%) (°C) Package
MC34268 2.81 2.89 800 3.9 20 0.3 0.5 150 SO–8, DPAK
Input
Thermal Control
Limiting Circuit
Current
Limit Output
Ground
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MOSFET/IGBT Drivers
In Brief . . .
The most important design aspect of a MOSFET/IGBT Page
gate drive is optimization of the switching characteristics. High Speed Dual Drivers . . . . . . . . . . . . . . . . . . . . . . 115
The switching characteristics are especially important in Single IGBT Driver . . . . . . . . . . . . . . . . . . . . . . . . . . . 116
motor control applications in which PWM transistors are
used in a bridge configuration. In these applications, the
gate drive circuit components should be selected to opti-
mize turn–on, turn–off and off–state impedance.
Voltage
References
Linear Voltage
Regulators
LDO Linear
Voltage
Regulators
MOSFET/
IGBT Drivers
Dedicated
Drivers
Dedicated Power
Mgmnt Controllers
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MOSFET/IGBT Drivers
High Speed Dual Drivers
(Inverting) (Noninverting)
MC34151P, D MC34152P, D
TA = 0° to +70°C, DIP–8, SO–8 TA = 0° to +70°C, DIP–8, SO–8
MC33151P, D MC33152P, D
TA = –40° to +85°C, DIP–8, SO–8 TA = –40° to +85°C, DIP–8, SO–8
These two series of high speed dual MOSFET driver The MC34151 series is pin–compatible with the
ICs are specifically designed for applications requiring MMH0026 and DS0026 dual MOS clock drivers, and can
low current digital circuitry to drive large capacitive be used as drop–in replacements to upgrade system
loads at high slew rates. Both series feature a unique performance. The MC34152 noninverting series is a
undervoltage lockout function which puts the outputs in mirror image of the inverting MC34151 series.
a defined low state in an undervoltage condition. In These devices can enhance the drive capabilities of
addition, the low “on” state resistance of these bipolar first generation switching regulators or systems designed
drivers allows significantly higher output currents at with CMOS/TTL logic devices. They can be used in
lower supply voltages than with competing drivers using dc–to–dc converters, motor controllers, capacitor charge
CMOS technology. pump converters, or virtually any other application
requiring high speed operation of power MOSFETs.
VCC
6 MC34151
5.7 V
Drive
Logic
Output A
Input A 7
2 100 k
Drive
Logic
Output B
Input B 5
4 100 k
Gnd 3
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The MC33153 is specifically designed to drive the • High Current Output Stage : 1.0 A Source – 2.0 A
gate of an IGBT used for ac induction motors. It can be Sink
used with discrete IGBTs and IBGT modules up to 100 A. • Protection Circuits for Both Conventional and
Typical applications are ac induction motor control, SenseIGBTs
brushless dc motor control, and uninterruptable power • Current Source for Blanking Timing
supplies. • Protection Against Overcurrent and Short Circuit
These devices are available in dual–in–line and • Undervoltage Lockout Optimized for IGBT’s
surface mount packages and include the following • Negative Gate Drive Capability
features:
VCC
VCC
Gate
Input Drive
4 VCC 5 Ouptut
3 VEE
VEE
VCC VEE VEE
6
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Dedicated Drivers
In Brief . . .
Dedicated drivers are designed and developed for spe- Page
cific application like electronic ballast. These drivers are Half Bridge Controller and Driver
designed to meet the specific application requirements. for Industrial Linear Tubes . . . . . . . . . . . . . . . . . . . . 118
Power Controllers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 119
Therefore the overall system performance as well as cost
Zero Voltage Switch . . . . . . . . . . . . . . . . . . . . . . . . 119
is highly maintained and minimized respectively. Ulti- Zero Voltage Controller . . . . . . . . . . . . . . . . . . . . . 120
mately the uses of these devices require a simpler system
design.
Voltage
References
Linear Voltage
Regulators
LDO Linear
Voltage
Regulators
MOSFET/
IGBT Drivers
Dedicated
Drivers
Dedicated Power
Mgmnt Controllers
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SMPSRM
The MC33157DW includes the oscillator circuit and defined values makes this IC suitable for any serie
two output channels to control a half–bridge power stage. resonant topologies.
One of the channels is ground–referenced. The second • Dedicated internal comparator provides an easy
one is floating to provide a bootstrap operation for the lamp strike detection implementation.
high side switch. • Digital RESET pin provides a fast reset of the
Dedicated Driver for Industrial Linear Tubes system (less than 10 µs). Both output Mosfet are set
• Main oscillator is current controlled, making it easy to “OFF’’ state when RESET is zero.
to set up by a single external resistor. On top of that, • Adjustable dead time makes the product suitable for
such a feature is useful to implement a dimming any snubber capacitor and size of MOSFET used as
function by frequency shift. power switches.
• Filament preheating time control built–in. • Designed to be used with standard setting capacitors
• The strike sequence is controllable by external v 470 nF.
passive components, the resonant frequency being • A voltage reference, derived from the internal
independently adjustable. This frequency can be bandgap, is provided for external usage. This
made different from the preheating and the steady voltage is 100% trimmed at probe level yielding a
state values. A frequency sweep between two 2% tolerance over the temperature range.
ORDERING INFORMATION
Tested Operating
Device Temperature Range Package
MC33157DW TA = –40° to +85°C Plastic SO–16L
R END SWP
CSWEEP
RPH
CPH COP ROP
VDD
ICO
1 4 5 3 6 7 2 +Vref
+Vref Iph
a
15 V
UULO R
Iph
COMPARATOR
Ifstrike
Iop
BAND GAP PREHEAT & STRIKE CONTROL R
REFERENCE
+Vref
+Vref R
(+7 V)
+Vref
DT adjust
ENABLE 16
8 VHS
Dead Time LEVEL 15
Latch HIGH SIDE
VHO
CONTROL LOGIC SHIFTER BUFFER 14
Q VOUT
9 STRIKE detection 13
Strike NC
Detection Vth C LOW SIDE 12
Clear VLO
BUFFER 11 GND
INHIBIT
RESET 10
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Power Controllers
An assortment of battery and ac line–operated control ICs for specific applications are shown. They are designed to
enhance system performance and reduce complexity in a wide variety of control applications.
This device is designed for thyristor control in a • Triac Drive – Supplies high current pulses to the
variety of ac power switching applications for ac input external power controlling thyristor.
voltages of 24 V, 120 V, 208/230 V, and 227 V @
50/60 Hz. • Protection Circuit – A built–in circuit may be
• Limiter–Power Supply – Allows operation directly actuated, if the sensor opens or shorts, to remove the
from an ac line. drive circuit from the external triac.
• Differential “On”/“Off” Sensing Amplifier – Tests • Inhibit Capability – Thyristor firing may be
for condition of external sensors or input command inhibited by the action of an internal diode gate.
signals. Proportional control capability or hysteresis
may be implemented. • High Power DC Comparator Operation –
• Zero–Crossing Detector – Synchronizes the output Operation in this mode is accomplished by
pulses to the zero voltage point of the ac cycle. connecting Pin 7 to 12 (thus overriding the action of
Eliminates RFI when used with resistive loads. the zero–crossing detector).
VCC
RS Power
Limiter Supply RL
Current
Boost
Zero
Crossing
Detector
AC
Input DC Mode or
Voltage 400 Hz Input
Protection Triac
RP Circuit Drive
Gate
“On”/“Off”
Sensing
Amp
*
VCC
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Failsafe UAA2016
3 Sampling
Sense Input + Pulse 6
Full Wave Amplifier Output
– Logic
4 Internal 7
Temperature + + 1/2 Reference +VCC
Reduction +
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Dedicated Power
Management Controllers
In Brief . . .
Dedicated power management controllers are Page
designed and developed for specific applications like Power Supply and Management IC
PDAs, Smart Card–based systems, or cellular phones. for Handheld Electronic Products . . . . . . . . . . . . . . 122
These controllers are utilizing mixed–signal processes GaAs Power Amplifier Support IC . . . . . . . . . . . . . . . 124
such as SMARTMOS for improved high performance Smartcard Power Management Controller
and precision characteristics. They have a high integra- and Interface IC for Smartcard–based Systems . . . 125
Versatile 6 Regulator Power Management
tion level and may integrate multiple analog or digital
Circuit for Cellular Subscriber Terminal . . . . . . . . . . 126
functions such as LDO voltage regulators, DC–DC con-
verters, Analog–to–Digital converters, latches, and
multiple gates.
Voltage
References
Linear Voltage
Regulators
LDO Linear
Voltage
Regulators
MOSFET/
IGBT Drivers
Dedicated
Drivers
Dedicated Power
Mgmnt Controllers
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SMPSRM
ORDERING INFORMATION
Operating
Device Temperature Range Package
MC34280 0°C to +70°C 32–pin LQFP
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8 7 6 5 VDD 4 3 2 1 GND
R123 LMAIN
VBAT r=5 L = 33u
(Rs < 60 mOhm)
VAUXADJ
VAUXEMR GND
15
Level Current Control and 26
VAUXCON Q1
PORB Control Limit Base Drive VAUXSW GND
16
LOWBAT 25
LIBATON Auxiliary Regulator
LIBATCL
VAUXADJ 17 18 19 20 21 22 23 24
VAUXCON VAUXEN VAUXFBN VBAT VAUXBDV N/C
VAUXEN VAUXBASE
VAUXFBP VAUXREF
(1.1 V to 2.2 V) VAUXCHG
LAUX
L = 22u
(Rs < 60 mOhm) VAUX
1N5818
GND
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C3
+
VBB Double +
12 VBattery
+ – – + VCC
(2.7 to 7.0 V)
C1 2 C2 1 14
8 MMSF4N01HD
VBB 11 3 VBB
Generator Gate Drive Output
Triple + MC33169
C4 (Voltage Tripler)
–
Tx Power Priority
Control 9 Management
Input RF RF
In Out
13 Power Amplifier
Idle Sense
10
Mode Input
6 Sense Input
Gnd
Negative
Generator
Charge
Pump
7 – + 5 4 – +
C
Cp VO Ci + f
Output
(– 2.5 V or – 4.0 V) Rf
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SMPSRM
L1
ILIM DC/DC
CONVERTER
PGND
PWRON POWER
INT MANAGER CARD CRDDET
AND DETECTOR
RDYMOD DELAY CRDCON
PROGRAMMING
CS
SYNCLK
CLOCK VBAT
ASYCLKIN GENERATOR
INVOUT CRDVCC
CRDIO
IO CRDRST
RESET LEVEL CRDC4
TRANSLATOR
C4 CRDC8
C8 CRDCLK
CRDGND
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SMPSRM
ORDERING INFORMATION
Operating
Device Temperature Range Package
MC33283FTB28,R2 *20°C to +70°C TQFP–32
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SMPSRM
VCC2 VCC1
29 5
VCC2
VR1
VCC1
5 mA 12
BUB
23
POR 700 k
VR1
VCC1
UVLO2 UVLO1
VR1 UVLO1
31
R1 OUT1
Vref
2 mA
22 VCC1
UVLO2
REFERENCE ON/OFF2
R2 3
VOLTAGE Vref OUT2
Vref
26 VCC1
CBYP
HIGH = UVLO
27 ACTIVE ON/OFF3 4
ENRS R3 OUT3
OUT5 VOLTAGE Vref
SELECTION
28
EN2 Vref
R5A
21 ON/OFF2 ON/
EN3
ON/OFF3 OFF5
ENABLE
20 ON/OFF4 VCC1 6
EN5 SWITCHES OUT5
ON/OFF5
19 VCC2 ON/OFF6
EN6 Vref
R5B
30
EN7
VCC2
18
SEL ON/OFF6 10
R6 OUT6
Vref
VCC1
OVLO
ON/OFF7 2
R7 OUT7
VCC2 Vref
6.5 V
13 15 7 14 1
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SMPSRM
System Management
In Brief . . .
Power supplies, MCU–based systems, industrial con- Page
trols, computer systems and many other products, portable Supervisory Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . 129
or not, are requiring system management functions which Overvoltage Crowbar Sensing Circuit . . . . . . . . . 129
monitor voltages to ensure proper system operation. Over/Undervoltage Protection Circuit . . . . . . . . . 130
These circuits monitor critical circuit conditions and Micropower Undervoltage Sensing Circuits . . . . 131
Micropower Undervoltage Sensing Circuits
report any violations of prescribed limits to a microproces-
with Programmable Output Delay . . . . . . . . . . . . 132
sor. The microprocessor will then take appropriate action Undervoltage Sensing Circuit . . . . . . . . . . . . . . . . 133
such as storing data before executing a graceful shutdown. Universal Voltage Monitor . . . . . . . . . . . . . . . . . . . 134
ON Semiconductor offers a wide variety of voltage
supervisory circuits (Undervoltage or Overvoltage)
designed for use where precise voltage limits or win-
dows are required for reliable system operation.
Newer supervisory circuits have utilized CMOS
technology and miniature surface mount packages
(SOT23–5 leads) to reduce the current consumption and
the PCB board area. This makes them particularly suited
for battery–powered applications.
Voltage
References
Linear Voltage
Regulators
LDO Linear
Voltage
Regulators
MOSFET/
IGBT Drivers
Dedicated
Drivers
Dedicated Power
Mgmnt Controllers
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Supervisory Circuits
A variety of Power Supervisory Circuits are offered. provide pin–programmable trip voltages or additional
Overvoltage sensing circuits which drive ‘‘Crowbar’’ features, such as an indicator output drive and remote
SCRs are provided in several configurations from a low activation capability. An over/undervoltage protection
cost three–terminal version to 8–pin devices which circuit is also offered.
This device can protect sensitive circuitry from resistive voltage divider. A minimum duration before
power supply transients or regulator failure when used trip is programmable with an external capacitor. Other
with an external ‘‘Crowbar’’ SCR. The device senses features include a 300 mA high current output for driv-
voltage and compares it to an internal 2.6 V reference. ing the gate of a ‘‘Crowbar’’ SCR, an open–collector
Overvoltage trip is adjustable by means of an external indicator output and remote activation capability.
VCC 1
200 µA
4
Current
2
Source
Sense 1
Vref
2.6 V 8
Output
7 3 5 6
VEE Sense 2 Indicator
Remote Output
Activation
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SMPSRM
The MC3425 is a power supply supervisory circuit drive output for use in conjunction with an external SCR
containing all the necessary functions required to ‘‘Crowbar’’ for shutdown. The undervoltage channel
monitor over and undervoltage fault conditions. This input comparator has hysteresis which is externally
device features dedicated over and undervoltage programmable, and an open–collector output for fault
sensing channels with independently programmable indication.
time delays. The overvoltage channel has a high current
VCC
8
OV
Sense 200 µA
OV
Drive
1
6
200 µA
UV
UV Indicator
Sense
4 IH 2.5 V
Vref
12.5 µA
5 2 7 Gnd
Input Section UV OV Output Section
DLY DLY
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MC33464H–09AT1 0.9
MC33464H–20AT1 2.0 Open
MC33464H–27AT1 2.7 Drain
MC33464H–30AT1 3.0 Reset
MC33464H–45AT1 4.5 SOT–89
MC33464H–09CT1 0.9 (1000)
MC33464H–20CT1 2.0 Compl.
MC33464H–27CT1 2.7 MOS
MC33464H–30CT1 3.0 Reset
MC33464H–45CT1 4.5
MC33464N–09ATR 0.9 TA = –30° to +80°C
MC33464N–20ATR 2.0 Open
MC33464N–21ATR 2.1
Drain
MC33464N–27ATR 2.7
MC33464N–30ATR 3.0 Reset
SOT–23
MC33464N–45ATR 4.5 ((3000))
MC33464N–09CTR 0.9 5 Leads
MC33464N–20CTR 2.0 Compl.
MC33464N–27CTR 2.7 MOS
MC33464N–30CTR 3.0 Reset
MC33464N–45CTR 4.5
Other voltages from 0.9 to 6.0 V, in 0.1 V increments, are available. Consult factory for information.
Reset
1
Reset
Vref Vref
X Denotes Package Type
YY Denotes Threshold Voltage
3 Gnd TZ Denotes Taping Type 3 Gnd
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SMPSRM
ORDERING INFORMATION
Threshold Operating
Device Voltage Type Temperature Range Package
MC33465N–09ATR 0.9
MC33465N–20ATR 2.0 Open
O en
MC33465N–27ATR 2.7
Drain
MC33465N–30ATR 3.0
MC33465N–32ATR 3.2 Reset
MC33465N–45ATR 4.5 SOT–23
TA = –30°
30° to +80°C
MC33465N–09CTR 0.9 5 Leads
MC33465N–20CTR 2.0 Compl.l.
Com
MC33465N–27CTR 2.7
MOS
MC33465N–30CTR 3.0
MC33465N–43CTR 4.3 Reset
MC33465N–45CTR 4.5
Other voltages from 0.9 to 6.0 V, in 0.1 V increments, are available. Consult factory for information.
MC33465N–YYATR MC33465N–YYCTR
Open Drain Output Configuration Complementary Output Configuration
RD RD
1
Reset
Vref Vref
3 Gnd 5 CD 3 Gnd 5 CD
YY Denotes Threshold Voltage
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TRUTH TABLE
Mode Select Input 1 Output 1 Input 2 Output 2
Pin 7 Pin 2 Pin 6 Pin 3 Pin 5 Comments
GND 0 0 0 0 Channels 1 & 2: Noninverting
1 1 1 1
Vref 0 0 0 1 Channel 1: Noninverting
1 1 1 0 Channel 2: Inverting
VCC (>2.0 V) 0 1 0 1 Channels 1 & 2: Inverting
1 0 1 0
VCC
POSITIVE AND NEGATIVE OVERVOLTAGE DETECTOR
8
V4
Input VS2 VHys2 2.54 V
V3 Reference
1
Gnd –
7 + +
R4
–VS1 + 2.8 V
V1 6
Input –VS1 VHys1 R3 2 + –
V2
1.27 V –
Output VCC + +
R2
Voltage LED “On” VS2 + 0.6 V
5
Pins 5, 6 Gnd 3 + –
R1 1.27 V
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SMPSRM/D
Rev. 1, Sept-1999
ON Semiconductor
SWITCHMODE™ Power
Supply Reference Manual
ON Semiconductor
Formerly a Division of Motorola
SMPSRM/D