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CONTENTS
Chapter 1 Features 1.1 IGBT-IPM Characteristics........................................................................ 3 1.2 R-IPM Characteristics.............................................................................. 4 1.3 Definition of Type Name and Lot No........................................................ 4 1.4 R-IPM Line Up......................................................................................... 5 Chapter 2 Explanation of Symbols/Terminology 2.1 Symbols in Block Diagram....................................................................... 6 2.2 Technical Terms and Definitions ............................................................. 7 Chapter 3 Explanation of Functions 3.1 Built-in Electric Functions ...................................................................... 12 3.2 Explanation of Functions ....................................................................... 12 3.3 Timing chart........................................................................................... 17 Chapter 4 Examples of Application Circuits 4.1 The Entire Circuit................................................................................... 19 4.2 Precautions ........................................................................................... 19 4.3 The Opto-couplers................................................................................. 20 4.4 Connector.............................................................................................. 20 Chapter 5 Cooling Design 5.1 Junction Temperature............................................................................ 21 5.2 Precautions for Heat Sink Selection ...................................................... 21 Chapter 6 Precautions Using R-IPM 6.1 Main Power Source Vd.......................................................................... 22 6.2 Control Power Source Vcc .................................................................... 22 6.3 Protection Operation.............................................................................. 23 6.4 Reliability ............................................................................................... 25 6.5 Others.................................................................................................... 25
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Chapter 1 Features
1.1 IGBT-IPM Characteristics
The intelligent power module (IPM) has the following characteristics when compared with the combination of the conventional IGBT modules and drive circuits. 1.1.1 Built-in drive circuit - IGBT gate drives operate under optimal conditions. - Since the wiring length between the internal drive circuit and IGBT is short and the impedance of the drive circuit is low, no reverse bias DC source is required. - The R-series IPM (R-IPM) devices require four control power sources, one source on the lower arm side, and three individual sources on the upper arm side with proper circuit isolation. 1.1.2 Built-in protection circuits The following built-in protective circuits are included in the R-IPM devices: (OC): Overcurrent protection (SC): Short-circuit protection (UV): Undervoltage protection for control power source (OH): Overheating protection (ALM): External alarm output 1) The OC and SC protection circuits provide protection against IGBT damage caused by overcurrent or load short-circuits. These circuits monitor the collector current of each IGBT using detection elements and, thus can minimize the possibility of severe damage to the IGBT. They also protect against arm short-circuits. Over Current protection=OC, Short Circuit protection=SC. 2) The UV protection circuit is in all of the IGBT drive circuits. This circuit monitors the Vcc supply voltage level against the IGBT drive Vin. In the event that the Vcc level falls below a specified level, the drive is biased to turn off the IGBT. Because of possible erratic Vcc voltage fluctuation in the drive source, hysteresis is added to the circuit to prevent premature shutdown. Under Voltage protection=UV. 3) The OH protection circuit protects the IGBT and FWD from overheating. It also monitors the insulating substrates with temperature detection elements installed on the insulating substrates inside the IPM . Case Temperature Over Heating protection=TcOH 4) Additionally, each IGBT chip of an R-IPM contains a temperature detection element on the IGBT die, which allows the OH to act rapidly when abnormal higher chip temperatures are detected. The protective operation time of TjOH after overheating is detected faster than that of TcOH time. Junction Temperature Over Heating protection=TjOH. 5) The ALM circuit outputs an alarm signal to outside of the IPM and is only monitored from the lower IGBTs. It is possible to shutdown the system reliably by issuing the alarm signal when the circuit detects an abnormal condition (specified above).
This signal is typically sent to the microcomputer controlling the IPM when the protection functions of TcOH and the lower arm side OC, SC, UV, or TjOH are detected. 1.1.3 Built-in brake circuit (7 in 1 IPM) - The drive circuits and protection circuits are included in the brake IGBT as same as inverter IGBTs. For the motor control inverter application, a brake circuit can be built to protect bus over voltage by just adding a power dissipating resistor. The dynamic brake IGBT fault information is also sent to the ALM output 1.1.4 Structural features 1) The insulation structure of ceramic substrates enables you to mount IPM directly on the heat sink, allowing more efficient cooling. 2) The control signal terminals are lined up with the standard pitch of 2.54mm and can be connected by one connector. Using guide pins, you can also insert a connector for printed circuit board mounting.
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3) The main power source input (P, N), brake output (B), and output terminal (U, V, W) are all arranged nearby, providing a package structure that allows for easy wiring. 4) The main terminals can be connected to a large current supply with M5 screws reliably. 5) Electrical connections (made by screws or connectors) do not require soldering, allowing the ease of module removal if necessary.
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2.1.1 Terminal symbols Terminal Symbol P N B U V W (1) GND U (3) Vcc U (4) GND V (6) Vcc V (7) GND W (9) Vcc W (10) GND (11) Vcc (2) Vin U (5) Vin V (8) Vin W (13) Vin X (14) Vin Y (15) Vin Z (12) Vin DB (16) ALM Control power source Vcc input in the upper arm U phase Vcc U: + side, GND U: - side Control power source Vcc input in the upper arm V phase Vcc V: + side, GND V: - side Control power source Vcc input in the upper arm W phase Vcc W : + side, GND W: - side Control power source Vcc input in the lower arm common Vcc: + side, GND: - side Control signal input in the upper arm U phase Control signal input in the upper arm V phase Control signal input in the upper arm W phase Control signal input in the lower arm X phase Control signal input in the lower arm Y phase Control signal input in the lower arm Z phase Control signal input in the lower arm brake phase Alarm signal ALM output when the protection circuits are operating 3-phase inverter output terminal Description Main power source Vd input terminal for the inverter bridge. P: + side, N: - side Brake output terminal: terminal to connect the resistor for regenerative operation declaration
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IGBT chips over heating protection temperature level Hysteresis Overcurrent protective operation current Overcurrent cut off time Undervoltage protection level Hysteresis Signal hold time Short circuit protection delay time Limiting resistor for alarm Switching time Chip-case thermal resistance Chip-fin thermal resistance Screw torque mounting Screw torque terminal Weight IPM switching frequency Reverse recovery current Reverse bias safe operation area Switching loss
TjOH TjH IOC tDOC VUV VH tALM tSC RALM t on t off tf t rr Rth (j-c) Rth (c-f)
Junction temperature at which the Tj overheat protection circuit operates Difference between TjOH and the junction temperature at which the Tj overheat protection is reset after lowering of Tj IGBT collector current at which the overcurrent protection (OC) works Shown in Fig. 2 Vcc at which the control source voltage lowering protection (UV) works Difference between VUV and Vcc at which protection is reset with the rise of Vcc after UV operation Period in which an alarm continues to be output (ALM) from the ALM terminal after the N side protection function is actuated Shown in Fig. 3 Built-in resistance limiting the primary current of opto-coupler for ALM output Shown in Fig. 4
Chip-case thermal resistance of IGBT or FWD Thermal resistance between the case and heat sink, when mounted on a heat sink at the recommended torque using the thermal compound Screw torque when mounting IPM onto a heat sink Screw torque for electrical connection of the main terminal
Weight of a IPM Range of the control signal frequencies for input into the control signal input terminal Shown in Fig. 4 Area of the current and voltage in which IGBT can be cutoff under specified conditions during turn-off IGBT switching loss during turn-on IGBT switching loss during turn-off FWD switching loss during reverse recovery
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10
16
P610/ P611
N W V U
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10
16
P
P612
P B
N U V W
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Ioc
Ic
IALM tDOC
Fig. 2
tsc
Isc
Ic
Ic
Ic
IALM
IALM
IALM
Fig. 3
Vinth(on) trr
Vinth(off)
90% 10%
toff
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Chapter 3
Explanation of Functions
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3.2.4 Overcurrent protection function (OC) 1) The overcurrent protection of IGBT is provided through detection of the collector current. If the Ic is exceeded Ioc level for a period of about 6 to 8 s (tDOC), soft IGBT cutoff is performed. However, if the level falls below the Ioc level in a period shorter than tDOC, or if the OFF signal is entered in the tDOC period, the OC protection function does not work. Both OC and SC do not work while OFF. 2) The OC protection function is mounted on all IGBTs including the brake. 3) Small detection losses The detection current that flows in the current sense IGBT contained in the IGBT chip is very small as compared with Ic of the main IGBT. Therefore, it is possible to make detection loss smaller than that caused by the shunt resistance. 4) Built-in latch to prevent malfunctioning (common also to UV and OH) The whole OC protection function has a latch period of about 2ms, and even if the ON signal is entered during a latch period, IGBT in which the protection is actuated does not operate. Since the ALM of each phase is mutually connected in the lower side including the brake, all IGBTs on the arm lower side stop for a latch period if the lower arm side performs protection operation. 5) Soft cutoff (common also to UV and OH) Since soft IGBT cutoff occurs when the protection circuit operates, di/dt during cutoff is small and the surge voltage can be suppressed low. 6) Operation delay time (period in which protection operation is not carried out) Since the protection is actuated only if the Ic level is exceeded Ioc level continuously for a period of tDOC, malfunctioning due to instantaneous overcurrent or noise is not caused. 3.2.5 Short circuit protection function (SC) The SC protection function always cooperates with the OC protection function to suppress the peak current when load or arm is shorted. 3.2.6 Undervoltage protection (UV) The UV protection function carries out the soft IGBT cutoff if the control source voltage (Vcc) falls to VUV when the input signal is ON. Since the UV hysteresis is set, the alarm is canceled when Vcc returns to VUV + VH if the input signal is OFF.
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3.2.7 Case temperature overheating protection function (TcOH) 1) The TcOH protection function detects the insulating substrate temperature with the temperature detection elements set up on the same ceramic substrate as that on which the power chips (IGBT and FWD) are set up. The protection function is activated if the detected temperature exceeds the protection temperature level continuously (TcOH) for a specified period of time (about 1ms). If the input signal of the lower arm side IGBT is ON, the soft cutoff occurs and all IGBT on the lower arm side are held off for a latch period of about 2ms. 2) OH hysteresis The hysteresis TcH is set up also in TcOH to prevent chattering. If the case temperature Tc falls below TcOH-TcH after latch period of about 2ms, the protection is released. 3) Protection operation delay time To prevent malfunctioning due to noise, the OH protection function is actuated only if TcOH is exceeded continuously for a period of about 1ms (tDOH). 3.2.8 Chip temperature overheating protection function (TjOH) 1) The TjOH protection function detects the IGBT chip temperature with the temperature detection elements set up on all IGBT chips. The protection function is activated if the detection temperature exceeds the protection temperature level continuously (TjOH) for a specified period of time (about 1ms). If the input signal is ON, the soft IGBT cutoff occurs and IGBT stops for a latch period of 2ms. If the TjOH protection of the lower arm is actuated, all IGBTs on the lower arm side stop for a latch period of 2ms. 2) OH hysteresis The hysteresis TjH is set up also in TjOH to prevent chattering. If the chip temperature Tj falls below TjOH-TjH after latch period of 2ms and the input signal is OFF, the protection is released. 3) Protection operation delay time To prevent malfunctioning due to noise, the OH protection function is only activated if TjOH is exceeded continuously for a period of about 1ms (tDOH). 3.2.9 Alarm output function (ALM) 1) Alarms are output during latch period of each protection operation of the lower arm side OC, UV, TjOH, and TcOH. If Vin is ON even after the latch period passes, the protection and alarm are not reset. In such a case, the protection and alarm are reset immediately after Vin changes to OFF. 2) Upper arm No alarm is output when the protection operation (OC, UV, TjOH) is occurred in only the upper arm side. If the input signal is OFF after the latch period of 2ms passes, the protection is released. 3) Alarm mutual connection of the lower arm Since the alarm terminals of each drive on the lower arm side are connected mutually, all IGBT on the lower arm side including DB stop during alarm output. If the input signal is OFF after the latch period of 2ms passes, the protection is released. 3.2.10 IPM internal block diagram Fig. 5 shows an IPM internal block diagram (with brake circuit). Fig. 6 shows an IPM internal block diagram (without brake circuit).
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Fig. 5
VccU VinU
VZ Pre-Driver
VinY
VZ
Pre-Driver
VinZ
VZ
Pre-Driver
B VinDB
VZ Pre-Driver
N
RALM
ALM
1.5k
Pre-drivers include following functions Amplifier for driver Short circuit protection Under voltage lockout circuit Over current protection IGBT chip over heating protection
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Fig. 6
VccU VinU
VZ Pre-Driver
VinY
VZ
Pre-Driver
VinZ
VZ
Pre-Driver
NC NC
N
RALM
ALM
1.5k
Pre-drivers include following functions Amplifier for driver Short circuit protection Under voltage lockout circuit Over current protection IGBT chip over heating protection
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Vin
I ALM
5uS
5uS
tALM
tALM
If Vcc is below VUV + VH during VCC is ON, an alarm is output. If the period in which Vcc falls below VUV is shorter than 5s, the protection does not work (while Vin is OFF) An alarm is output when a period of about 5s passes after Vcc falls below VUV if Vin is OFF, and IGBT maintains OFF. (No alarm is output if only Vcc of the upper arm falls below VUV) If Vcc returns to VUV + VH after tALM passes, UV is reset after tALM passes if Vin is OFF and the alarm is also reset simultaneously. If the period in which Vcc falls below VUV is shorter than 5s, the protection does not work (while Vin is ON). An alarm is output when a period of about 5s passes after Vcc falls below VUV if Vin is ON and the soft IGBT cutoff occurs. (No alarm is output if only Vcc of the upper arm falls below VUV). If Vcc returns to VUV + VH after tALM passes, UV is reset after tALM passes if Vin is OFF and the alarm is also reset simultaneously. An alarm is output if Vcc falls below VUV during Vcc is OFF.
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Vin
Ic
5uS
5uS
If Vcc is below VUV + VH during Vcc is ON, an alarm is output. (Until Vin changes to OFF) If Vcc returns to VUV + VH after tALM passes, UV and the alarm are reset simultaneously with the return of VUV + VH if Vin is OFF. Even if Vcc returns to VUV + VH after tALM passes, UV is not reset after tALM passes if Vin is ON. UV and the alarm are reset simultaneously with Vin OFF. If Vin is ON during Vcc is OFF, the alarm is output, and the soft IGBT cutoff occurs while Vcc is below VUV.
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An alarm is output and the soft IGBT cutoff occurs when tDOC passes after Ic rises above Ioc. No alarm is output for the upper arm. OC and the alarm are reset simultaneously if Vin is OFF when tALM passes. An alarm is output and the soft IGBT cutoff occurs when tDOC passes after Ic rises above Ioc. No alarm is output for the upper arm. If Vin is ON when tALM passes, OC is not reset. OC and the alarm are reset simultaneously when Vin is OFF. If Vin changes to OFF before tDOC passes after Ic rises above Ioc, the protection function is not activated and the normal IGBT cutoff occurs. If Vin changes to OFF before tDOC passes after Ic rises above Ioc. The protection function is not activated and the normal IGBT cutoff occurs.
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If the load shorts after Ic has started flowing and Ic exceeds Isc, the Ic peak is suppressed instantly. An alarm is output and the soft IGBT cutoff occurs when tDOC passes. No alarm is output for the upper arm. OC and the alarm are reset simultaneously if Vin is OFF when tALM passes. If the load is shorted and Isc is exceeded simultaneously with the start of flow of Ic, the Ic peak is instantly suppressed. An alarm is output and the soft IGBT cutoff occurs after tDOC passes. No alarm is output for the upper arm. If Vin is ON when tALM passes, OC is not reset. OC and the alarm are reset simultaneously when Vin is OFF. If load is shorted after Ic started to flow and Ic exceeds Isc, the Ic peak is suppressed instantly. Then, if Vin changes to OFF before tDOC passes, the protection function is not activated and the normal IGBT cutoff occurs. If the load is shorted simultaneously with the start of flow of Ic and Ic exceeds Isc, the Ic peak is suppressed instantly. Then, if Vin changes to OFF before tDOC passes, the protection function is not activated and the normal IGBT cutoff occurs.
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TcOH TcOH-TcH Tc
Ic
I ALM
1mS
tALM
1mS
tALM
1mS
tALM
An alarm is output if the case temperature Tc continuously exceeds TcOH for a period of about 1ms, and if Vin is ON, the soft cutoff of all IGBT on the lower arm side occurs. If Tc falls below TcOH-TcH before tALM passes, the alarm is reset when tALM passes. If Tc exceeds continuously TcOH for a period of about 1ms, an alarm is output. (While Vin is OFF) If Tc has not fallen below TcOH-TcH when tALM passes, the alarm is not reset. When Tc falls below TcOH-TcH after tALM passes, the alarm is reset.
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TjOH TjOH-TjH Tj
Ic
I ALM
1mS
tALM
1mS
tALM
1mS
tALM
An alarm is output and the soft IGBT cutoff occurs if the IGBT chip temperature Tj continuously exceeds TjOH for a period of about 1ms. No alarm is output for the upper arm. If Tj falls below TjOH-TjH before tALM passes, OH and the alarm are simultaneously reset if Vin is OFF when tALM passes. An alarm is output if Tj continuously exceeds TjOH for a period of about 1ms, and if Vin is OFF, the protection function is not activated. No alarm is output for the upper arm. When Tj falls below TjOH-TjH after tALM passes, OH and the alarm are reset simultaneously if Vin is OFF.
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TjOH TjOH-TjH Tj
3uS<
Ic
I ALM
1mS
tALM
<1mS
<1mS
1mS
tALM
If Tj exceeds TjOH and then falls below TjOH within about 1ms, OH does not operate regardless of whether Vin is ON or OFF. If Tj exceeds TjOH and then falls below TjOH within about 1ms, OH does not operate regardless of whether Vin is ON or OFF. If Tj exceeds TjOH and then falls below TjOH for a period of about 3s or longer, OH operates when the period in which Tj exceeds TjOH passes about 1ms.
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AC200V
IPM
U
5V
1k
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IPM
AC200V
B
Vcc
N
20k + IF 0.1uF 10uF
5V
1k
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4.2 Precautions
4.2.1 Control power source As shown in Fig. 7 and Fig. 8, four isolated control sources, upper arm side=3 and lower arm side=1, are required. If you use a standard power supply unit, do not connect the GND terminal on the power output. If you connect the GND terminal to + or of the output, a malfunction may result because each power source is connected to the ground on the power source input. Reduce the stray capacitance between each power source and the ground as much as possible. 4.2.2 Structural isolation among four power sources (input connectors and PC boards) Isolation is needed between four power sources each and the main power source. Since a large amount of dv/dt is applied to this isolation during IGBT switching, keep sufficient clearance between the components and the isolation. (2mm or more is recommended) 4.2.3 GND connection The control power source GND on the lower arm side and the main power source GND are connected inside the IPM. Never connect them outside the IPM. If you connect them outside the IPM, loop currents generated inside and outside IPM flow to the lower arm and cause malfunctioning of the opto-coupler and the IPM. The input circuit of the IPM may also be damaged. 4.2.4 Control power source capacitor Capacitors 10F and 0.1F connected to each control power source as shown in Fig. 7 and Fig. 8 are not intended for smoothing the control power sources, but for compensating the wiring impedance up to the IPM. Capacitors for smoothing are needed separately. Since transient variations may be caused in the wiring impedance from the capacitor to the control circuit, connect the capacitor as close to the IPM control terminal as possible. As for the electrolytic capacitors, select those capacitors with lower impedance and better frequency characteristics. In addition, connect capacitors with better frequency characteristics, such as film capacitors, in parallel. When capacitors are connected between input and GND terminals, pay attention to longer delay time after signals inputted to primary side of opto-coupler. 4.2.5 Pull-up of the signal input terminal Pull up the control signal input terminal to Vcc with a resistor of 20k. Even if you do not use the brake in the brake built-in IPM, pull up the DB input terminal also. If you do not pull up the terminals, a malfunction may be caused by dv/dt. 4.2.6 Snubber Connect the snubber to the PN terminals directly. For the P612 package set up the snubber for each PN terminal on both sides. 4.2.7 B terminal In the case of the 6 in 1 package (without brake) type, connecting the B terminal to the N or P terminal is recommended. Avoid the use while the B terminal is floating.
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Fig. 9 Opto-coupler input circuit 1. Good example: Totem pole output IC Current limiting resistor on the cathode side of the photo diode
2. Good example: Photo diode A-K is shorted by transistors C-E (example which is particularly fit for opto-coupler OFF)
4. Bad example: Current limiting resistor on the anode side of the photo diode
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4.3.2 Opto-coupler for alarm output 1) Opto-coupler rating Though you can use general-purpose opto-couplers, we recommend using the opto-couplers with the following characteristics. - 100% < CTR < 300% - One-element packed type Example) TLP521-1-GR rank Note: Also the safety standards such as UL and VDE, should be applied. 2) Input current limiting resistor The current limiting resistor of the light emitting diode in the opto-coupler input is contained in the IPM. RALM=1.5k and if connected directly to Vcc, about 10mA of IF flows with Vcc=15V. Therefore, there is no need to connect any current limiting resistor. However, if a large amount of current Iout > 10mA is needed on the opto-coupler output, increase the CTR value of the opto-coupler to a required value. 3) Wiring between the opto-coupler and the IPM Since a large amount of dv/dt is applied also on the photo-coupler for alarm, the same note as described in 4.3.12) should be taken.
4.4 Connector
You can connect the control circuit to the R-IPM entirely by using one type of connectors. The connector should be Au-plated electrode and 2.54mm of pitch. Recommended connector: Hirose Electric MDF7-25S-2.54DSA
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Chapter 5
Cooling Design
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Chapter 6
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Apply the main power source after the voltage reaches 13.5V or higher. 3) VUV + VH to 13.5V, 13.5V to VUV The control circuit operates. However, power loss increases due to the lack of drive voltage. Because the protection characteristics are changed, the circuit may be damaged due to the insufficient protection. Take care to avoid operation in this range. 4) 13.5V to 16.5V Voltage range required for the IPM to operate normally. We recommend using the IPM at voltage of around 15V. 5) 16.5V to 20.0V The control circuit can operate. However, because the protection characteristics are changed due to excessive drive source voltage for IGBT and FWD, the circuit may be damaged depending on the load. 6) Over 20.0V Take care to avoid operation in this range. Never apply a Vcc of, 20V or more; the control circuit could be damaged. 6.2.2 Voltage ripple 13.5V to 16.5V shown in 6.2.1 includes the Vcc voltage ripple. The protection of UV or OC may not operate as expected due to excess or lack of the drive voltage even if the Vcc fluctuates in such a short period of time. When designing a control power source, make sure to verify that the voltage ripple is suppressed sufficiently low. Also take care so that noise on the power source is suppressed low. 6.2.3 Power source sequence As shown in 6.2.1, apply the main power source after Vcc reaches the range of 13.5V to 16.5V. In the worst case, if the main power source is applied before the control source voltage reaches a specified value, the IPM may be damaged because the protection is not ready to operate. 6.2.4 Alarm during power source ON and OFF An alarm is output if the voltage is below VUV + VH during power source ON. Alarm is reset if the voltage rises above VUV + VH. However, if the ON signal is being entered, the alarm is not canceled, so it is necessary to take appropriate action by shutting down the control circuit. Likewise, an alarm is output during power source OFF, you need to take the above-mentioned appropriate action.
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6.3.2 Examples of OC operation due to load errors and precautions 1) Overload If the IPM output current increases due to load motor abnormalities, the OC operates. The soft IGBT cutoff occurs after tDOC passes. An alarm is output in case of the lower arm OC operation. 2) Load short circuit If the motor or IPM output terminal is shorted, the Ic peak is suppressed instantly to prevent the flow of excessive current. If the condition of the short circuit is not cleared in a period of tDOC, the soft IGBT cutoff occurs, and an alarm is output, in case of the lower arm. 3) Starting with load short circuit The OC has a delay time of about 10s. If the input signal pulse width is shorter than this, the OC does not operate. Therefore, if the input signal pulses of 10s or less are continuing when starting with load shorted, short circuits occur continuously and the chip temperature of IGBT rises rapidly. In such a case, TcOH is not appropriate because the rise of case temperature is delayed. When the chip temperature exceeds Tjmax, TjOH operates to protect the chip from overheating. However, because TjOH is also delayed by about 1ms, if the temperature rises rapidly the activation of the protection function may be too late to prevent the chip from being damaged. By setting the pulse width of the initial input signal during startup to 10s or more, overcurrent due to short circuits can reliably be detected and errors can be detected by alarm output by the OC protection operation. 4) Arm short circuit If the ON signal is entered simultaneously for the upper and lower arms, IGBT of the upper and lower arms are turned ON simultaneously, resulting in an arm short circuit. If this occurs, the Ic peak is immediately suppressed. After tDOC passes, the soft IGBT cutoff occurs and an alarm is output. 5) Ground short If ground short is caused due to insulation abnormalities of the motor and an overcurrent flows to the lower arm, the soft IGBT cutoff occurs and an alarm is output. If the overcurrent flows to the upper arm, the soft IGBT cutoff occurs but no alarm is output. The state of selfcutoff is maintained for about 2ms. If the input signal is not stopped, the protected state is released after 2ms. Since the AC input phase is generally inverted after 10ms, short circuit currents flow to the lower arm, and at this time an alarm is output. 6.3.3 Alarm on the upper arm side No alarm is output from the upper arm side. The OC, SC, and UV are set up for all IGBT including the brake and have the latch period of 2ms. The alarm output is designed for one system on the lower arm side and is not designed for the upper arm side. As a result, no alarm is output if the protection function operates only on the upper arm side. However, the upper-phase current lacks during latch period of 2ms, and when the phase moves to the lower phase, an overcurrent flows to the lower arm and then an alarm is output by the OC operation. 6.3.4 Overcurrent of FWD The OC and SC detect the collector current for their operation, but do not detect the anode current of FWD. Therefore, the protection function is not activated when abnormal currents flow only in FWD.
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6.3.5 Temperature detection location for the case temperature protection (TcOH) The temperature detection device for the case temperature protection is located on the ceramic substrate on which power chips are mounted. The location of the temperature detection device on the substrate is near the lower arm X phase IGBT and at one edge of the substrate. TcOH is designed to protect the IPM when the temperature of the whole substrate rises. When overheating is concentrated on one main device, the chip temperature protection TjOH in 6.3.6 is employed. 6.3.6 Chip temperature protection (TjOH) If the current flows concentrated on one or two IGBTs, such as motor lock mode, the chip temperature rises rapidly and the case temperature protection function is not appropriate. In this case, the chip is protected from thermal damage by the temperature detection elements installed in the IGBT chip. The chip temperature protection function is installed in all IGBT including the brake.
6.4 Reliability
6.4.1 Power cycling capability Lifetime of semiconductor product is not permanent. Accumulated fatigue by thermal stress resulting from rising and falling temperatures generated within the device may shorten the lifetime of the components. Narrow the width of temperature variations as much as possible. 6.4.2 Reliability test items Item Thermal shock Temperature cycle Shock Vibration Terminal tensile strength Tightening strength Intermittent operation High temperature reverse bias High temperature storage Low temperature storage Humid storage Pressure cooker Referenced standard JIS C7021 A-3 JIS C7021 A-4 JIS C7021 A-7 JIS C7021 A-10 JIS C7021 A-11 EIAJ ED-4701 A112 JIS C7021 B-6 JIS C7021 B-8 JIS C7021 B-10 JIS C7021 B-12 JIS C7021 B-11 EIAJ ED-4701 B-123 Method/Condition 0/100oC, 5min each, 10 cycles 40/RT/125oC, 60/30/60min, 100 cycles 1000G, 0.5ms, XYZ each 3 times 10G, 10 to 500Hz, 15min, XYZ each 6h 10N to the direction perpendicular to the control terminal Method 2 (Screw torque test), 3.5Nm Rated Pc, 2s/18s (ON/OFF), 3000 cycles 125oC, VDCX0.8, 1000h 125oC, 1000h -40 C, 1000h 85oC, 85%, 1000h 2atm, 121oC, 100%, 20h
o
6.5 Others
6.5.1 Precautions for storage/transportation o 1) Store the IPM at room temperature of 5 to 35 C and humidity level of 45 to 75%. 2) Avoid rapid temperature and humidity changes. In particular, do not allow condensation on the IPM surface. 3) Avoid locations where corrosive gases are generated or dust is present. 4) Take care so that no load is placed on the IPM. Particularly, the control terminal should not be bent. 5) Store IPM with unprocessed terminals, and with no load on them. 6) Do not drop or subject an IPM to shock during transportation.
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6.5.2 Precautions for usage and installation into equipment 1) Do not drop an IPM or subject it to shock during installation into devices, transportation, or driving. 2) Take care so that no load is placed on the IPM. Particularly, the control terminal should not be bent. 3) Do not perform soldering by re-flow on the main terminal and control terminal. Take care to prevent any influence to the IPM by heat, flux, and washing solutions used for soldering other components. 4) Avoid rapid temperature and humidity changes. In particular, do not allow condensation on the IPM surface. 5) Avoid locations where corrosive gases are generated or dust is present. 6) IGBT and IC contained in the IPM are easily destroyed by static electricity. Take care to prevent high voltage static electricity to the main terminal and control terminal. 7) Connect adequate fuse or protector of circuit between three-phase line and this product to prevent the equipment from causing secondary destruction. 8) When using the IPM in your equipment, you are requested to take adequate safety counter measures to prevent the equipment from causing a physical injury, fire, or other problem if any of the IPM becomes faulty. It is recommended to make your design fail-safe, flame retardant, and free of malfunction. 9) All applications described in this manual exemplify the use of the IPM for reference only. No right or license, either express or implied, under any patent, copyright, trade secret or other intellectual property right owned by Fuji Electric Co., Ltd. is granted. 10) If you need to use the IPM for equipment requiring higher reliability than normal, such as for the equipment listed below, it is imperative to contact Fuji Electric to obtain prior approval. - Transportation equipment (mounted on cars and ships) - Space equipment - Medical equipment - Nuclear control equipment - Submarine repeater equipment 11) If you have any question about any portion in this manual, ask to Fuji Electric before using the IPM.
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