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(PNP) 2N6040, 2N6042,

(NPN) 2N6043*, 2N6045*


*Preferred Device

Plastic MediumPower
Complementary Silicon
Transistors
. . . designed for generalpurpose amplifier and lowspeed
switching applications.
High DC Current Gain
hFE = 2500 (Typ) @ IC = 4.0 Adc
CollectorEmitter Sustaining Voltage @ 100 mAdc
VCEO(sus) = 60 Vdc (Min) 2N6040, 2N6043
= 100 Vdc (Min) 2N6042, 2N6045
Low CollectorEmitter Saturation Voltage
VCE(sat) = 2.0 Vdc (Max) @ IC = 4.0 Adc 2N6043,44
= 2.0 Vdc (Max) @ IC = 3.0 Adc 2N6042,
2N6045
Monolithic Construction with BuiltIn BaseEmitter Shunt Resistors
EPOXY MEETS UL 94, V0 @ 0.125 in
ESD Ratings: Human Body Model, 3B > 8000 V
Machine Model, C > 400 V

MAXIMUM RATINGS (Note 1)


Rating

Symbol

2N6040
2N6043

2N6042
2N6045

Unit

CollectorEmitter Voltage

VCEO

60

100

Vdc

CollectorBase Voltage

VCB

60

100

Vdc

EmitterBase Voltage

VEB

5.0

Vdc

IC

8.0
16

Adc

Base Current

IB

120

mAdc

Total Power Dissipation


@ TC = 25C
Derate above 25C

PD

75
0.60

W
W/C

65 to + 150

Collector Current

Continuous
Peak

Operating and Storage Junction,


Temperature Range

TJ, Tstg

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DARLINGTON, 8 A
COMPLEMENTARY SILICON
POWER TRANSISTORS
60 V 100 V, 75 W
MARKING
DIAGRAM

AYWW
2Nxxxx

STYLE 1:
PIN 1.
2.
3.
4.

BASE
COLLECTOR
EMITTER
COLLECTOR

TO220AB
CASE 221A09
Style 1
xxxx = Specific Device Code:
6040, 6042, 6043, 6045
A
= Assembly Location
Y
= Year
WW = Work Week

ORDERING INFORMATION
Package

Shipping

2N6040

Device

TO220AB

50 Units / Rail

2N6042

TO220AB

50 Units / Rail

2N6043

TO220AB

50 Units / Rail

TO220AB

50 Units / Rail

THERMAL CHARACTERISTICS
Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to


Case

JC

1.67

C/W

2N6045

Thermal Resistance, Junction to


Ambient

JA

57

C/W

*Preferred devices are recommended choices for future


use and best overall value.

1. Indicates JEDEC Registered Data.

Semiconductor Components Industries, LLC, 2003

August, 2003 Rev. 5

Publication Order Number:


2N6040/D

(PNP) 2N6040, 2N6042, (NPN) 2N6043*, 2N6045*

PD, POWER DISSIPATION (WATTS)

TA TC
4.0 80

3.0 60

TC

2.0 40

TA

1.0 20

20

40

60
80
100
T, TEMPERATURE (C)

120

140

160

Figure 1. Power Derating

*ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted)


Characteristic

Symbol

Min

Max

60
100

20
20

20
20
200
200
200

Unit

OFF CHARACTERISTICS

CollectorEmitter Sustaining Voltage


(IC = 100 mAdc, IB = 0)

VCEO(sus)

2N6040, 2N6043

Vdc

2N6042, 2N6045

A

Collector Cutoff Current


(VCE = 60 Vdc, IB = 0)
(VCE = 100 Vdc, IB = 0)

2N6040, 2N6043
2N6042, 2N6045

ICEO

Collector Cutoff Current


(VCE = 60 Vdc, VBE(off) = 1.5 Vdc)
(VCE = 100 Vdc, VBE(off) = 1.5 Vdc)
(VCE = 60 Vdc, VBE(off) = 1.5 Vdc, TC = 150C)
(VCE = 80 Vdc, VBE(off) = 1.5 Vdc, TC = 150C)
(VCE = 100 Vdc, VBE(off) = 1.5 Vdc, TC = 150C)

2N6040, 2N6043
2N6042, 2N6045
2N6040, 2N6043
2N6041, 2N6044
2N6042, 2N6045

Collector Cutoff Current


(VCB = 60 Vdc, IE = 0)

2N6040, 2N6043

20

2N6042, 2N6045

20

2.0

1000
1000
100

20.000
20,000

2.0
2.0
4.0

A

ICEX

A

ICBO

(VCB = 100 Vdc, IE = 0)

Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0)

IEBO

mAdc

ON CHARACTERISTICS

DC Current Gain
(IC = 4.0 Adc, VCE = 4.0 Vdc)
(IC = 3.0 Adc, VCE = 4.0 Vdc)
(IC = 8.0 Adc, VCE = 4.0 Vdc)

2N6040, 2N6043,
2N6042, 2N6045
All Types

hFE

CollectorEmitter Saturation Voltage


(IC = 4.0 Adc, IB = 16 mAdc)
(IC = 3.0 Adc, IB = 12 mAdc)
(IC = 8.0 Adc, IB = 80 Adc)

2N6040, 2N6043,
2N6042, 2N6045
All Types

VCE(sat)

Vdc

BaseEmitter Saturation Voltage (IC = 8.0 Adc, IB = 80 mAdc)

VBE(sat)

4.5

Vdc

BaseEmitter On Voltage (IC = 4.0 Adc, VCE = 4.0 Vdc)

VBE(on)

2.8

Vdc

Small Signal Current Gain (IC = 3.0 Adc, VCE = 4.0 Vdc, f = 1.0 MHz)

|hfe|

4.0

Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 0.1 MHz)

Cob

300
200

pF

hfe

300

DYNAMIC CHARACTERISTICS

2N6040/2N6042
2N6043/2N6045

SmallSignal Current Gain (IC = 3.0 Adc, VCE = 4.0 Vdc, f = 1.0 kHz)

*Indicates JEDEC Registered Data.

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(PNP) 2N6040, 2N6042, (NPN) 2N6043*, 2N6045*


5.0

RC

SCOPE

TUT

V2
approx
+8.0 V

RB

51

0
V1
approx
12 V

D1

8.0 k 120

+4.0 V
25 s

for td and tr, D1 is disconnected


and V2 = 0
For NPN test circuit reverse all polarities and D1.

tr, tf 10 ns
DUTY CYCLE = 1.0%

ts

2.0

t, TIME (s)

RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS


D1 MUST BE FAST RECOVERY TYPE, eg:
1N5825 USED ABOVE IB 100 mA
MSD6100 USED BELOW IB 100 mA

3.0

VCC
30 V

0.7
0.5
0.3
0.2 VCC = 30 V
IC/IB = 250
IB1 = IB2
0.1 TJ = 25C
PNP
td @ VBE(off) = 0 V
0.07
NPN
0.05
0.1
0.2 0.3
0.5 0.7 1.0
2.0 3.0
IC, COLLECTOR CURRENT (AMP)

r(t), EFFECTIVE TRANSIENT


THERMAL RESISTANCE (NORMALIZED)

Figure 2. Switching Times Equivalent Circuit


1.0
0.7
0.5

D = 0.5

0.3

0.2

0.02

0.05
0.02
SINGLE PULSE

0.01
0.01

0.02 0.03

0.01

0.05

5.0 7.0

10

P(pk)
JC(t) = r(t) JC
JC = 1.67C/W
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
t1
READ TIME AT t1
t2
TJ(pk) TC = P(pk) JC(t)
DUTY CYCLE, D = t1/t2

0.1

0.03

tr

Figure 3. Switching Times

0.2
0.1
0.07
0.05

tf

1.0

0.1

0.2 0.3

0.5

1.0
2.0 3.0 5.0
10
t, TIME OR PULSE WIDTH (ms)

20

30

50

100

200 300

500

1000

Figure 4. Thermal Response

20
IC, COLLECTOR CURRENT (AMP)

5.0
2.0
1.0
0.5
0.2
0.1

0.05

0.02
1.0

There are two limitations on the power handling ability of


a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 5 is based on TJ(pk) = 150C; TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided TJ(pk)
< 150C. TJ(pk) may be calculated from the data in Figure 4.
At high case temperatures, thermal limitations will reduce
the power that can be handled to values less than the
limitations imposed by second breakdown.

100 s

10
500 s
1.0ms
dc
5.0ms
TJ = 150C
BONDING WIRE LIMITED
THERMALLY LIMITED @ TC = 25C
(SINGLE PULSE)
SECOND BREAKDOWN LIMITED
CURVES APPLY BELOW RATED VCEO
2N6040, 2N6043
2N6045
20 30
5.0 7.0 10
2.0 3.0
50
VCE, COLLECTOREMITTER VOLTAGE (VOLTS)

70 100

Figure 5. ActiveRegion Safe Operating Area

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(PNP) 2N6040, 2N6042, (NPN) 2N6043*, 2N6045*


300

5000
3000
2000

200

TJ = 25C
C, CAPACITANCE (pF)

hfe, SMALLSIGNAL CURRENT GAIN

10,000

1000
500
300
200

TC = 25C
VCE = 4.0 Vdc
IC = 3.0 Adc

100
50
30
20
10
1.0

5.0

Cib

70
50

PNP
NPN
2.0

Cob
100

PNP
NPN
10
20
50 100
f, FREQUENCY (kHz)

30
0.1

500 1000

200

0.2

0.5
1.0 2.0
5.0 10
20
VR, REVERSE VOLTAGE (VOLTS)

Figure 7. Capacitance

Figure 6. SmallSignal Current Gain

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50

100

(PNP) 2N6040, 2N6042, (NPN) 2N6043*, 2N6045*


PNP
2N6040, 2N6042

NPN
2N6043, 2N6045

20,000

20,000

7000
5000

10,000
hFE , DC CURRENT GAIN

10,000
hFE , DC CURRENT GAIN

VCE = 4.0 V

VCE = 4.0 V

TJ = 150C

3000
2000

25C

1000
700
500

55 C

300
200
0.1

0.2

0.3
0.5 0.7 1.0
2.0 3.0
IC, COLLECTOR CURRENT (AMP)

5.0 7.0

7000
5000

TJ = 150C

3000
2000
25C
1000
700
500

55 C

300
200
0.1

10

0.2

0.3
0.5 0.7 1.0
2.0 3.0
IC, COLLECTOR CURRENT (AMP)

5.0 7.0

10

VCE , COLLECTOREMITTER VOLTAGE (VOLTS)

VCE , COLLECTOREMITTER VOLTAGE (VOLTS)

Figure 8. DC Current Gain

3.0
TJ = 25C
2.6
IC = 2.0 A

6.0 A

4.0 A

2.2

1.8

1.4

1.0
0.3

0.5 0.7 1.0

20

5.0 7.0 10
2.0 3.0
IB, BASE CURRENT (mA)

30

3.0
TJ = 25C
2.6
IC = 2.0 A

6.0 A

4.0 A

2.2

1.8

1.4

1.0
0.3

0.5 0.7 1.0

2.0 3.0
5.0 7.0
IB, BASE CURRENT (mA)

10

20

30

7.0

10

Figure 9. Collector Saturation Region

3.0

3.0
TJ = 25C

TJ = 25C
2.5
V, VOLTAGE (VOLTS)

V, VOLTAGE (VOLTS)

2.5

2.0

1.5

VBE @ VCE = 4.0 V


VBE(sat) @ IC/IB = 250

1.0

2.0
VBE(sat) @ IC/IB = 250

1.5

VBE @ VCE = 4.0 V


1.0
VCE(sat) @ IC/IB = 250

VCE(sat) @ IC/IB = 250


0.5

0.1

0.2 0.3

0.5 0.7

1.0

2.0 3.0

5.0

0.5

7.010

0.1

0.2 0.3

IC, COLLECTOR CURRENT (AMP)

0.5 0.7

1.0

2.0 3.0

IC, COLLECTOR CURRENT (AMP)

Figure 10. On Voltages

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5.0

(PNP) 2N6040, 2N6042, (NPN) 2N6043*, 2N6045*


PACKAGE DIMENSIONS

TO220AB
CASE 221A09
ISSUE AA

T
B

SEATING
PLANE

F
T

DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
T
U
V
Z

Q
1 2 3

H
K
Z
L

G
D
N

STYLE 1:
PIN 1.
2.
3.
4.

NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.

BASE
COLLECTOR
EMITTER
COLLECTOR

INCHES
MIN
MAX
0.570
0.620
0.380
0.405
0.160
0.190
0.025
0.035
0.142
0.147
0.095
0.105
0.110
0.155
0.018
0.025
0.500
0.562
0.045
0.060
0.190
0.210
0.100
0.120
0.080
0.110
0.045
0.055
0.235
0.255
0.000
0.050
0.045

0.080

MILLIMETERS
MIN
MAX
14.48
15.75
9.66
10.28
4.07
4.82
0.64
0.88
3.61
3.73
2.42
2.66
2.80
3.93
0.46
0.64
12.70
14.27
1.15
1.52
4.83
5.33
2.54
3.04
2.04
2.79
1.15
1.39
5.97
6.47
0.00
1.27
1.15

2.04

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are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make
changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any
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2N6040/D