Sensors and Actuators B 96 (2003) 226233

Formulation of gas diffusion dynamics for thin lm semiconductor gas

sensor based on simple reactiondiffusion equation
Naoki Matsunaga
a
, Go Sakai
b
, Kengo Shimanoe
b
, Noboru Yamazoe
b,
a
Department of Molecular and Material Sciences, Interdisciplinary Graduate School of Engineering Sciences,
Kyushu University, Kasuga-shi, Fukuoka 816-8580, Japan
b
Department of Molecular and Material Sciences, Faculty of Engineering Sciences, Kyushu University, Kasuga-shi, Fukuoka 816-8580, Japan
Received 4 February 2003; received in revised form 6 May 2003; accepted 8 May 2003
Abstract
In response and recovery steps of a thin lm semiconductor gas sensor, target gas molecules diffuse in and out of the thin lm. The gas
diffusion dynamics taking place in these steps have been formulated based on a simple reactiondiffusion equation assuming a rst-order
reaction of target gas. In order to facilitate mathematical treatments, the actual thin lm device was replaced by an equivalent model, for
which boundary conditions could be set properly. With this model, the reactiondiffusion equation could be solved by using the methods
of Fourier expansion and separation of variables. The solutions given as a function of diffusion coefcient D, rate constant k, lm thickness
L, depth x and time t, are shown to express well how target gas concentration prole in the thin lm develops or vanishes in the response
or recovery step, respectively.
2003 Elsevier B.V. All rights reserved.
Keywords: Diffusion; Diffusion equation; Gas sensor; Thin lm; Semiconductor; Oxide
1. Introduction
It is well known that diffusion equations provide theo-
retical bases for analyses of heat or mass transport. In the
led of semiconductor gas sensor, the gas in problem (target
gas) interacts with the porous sensing body used. Target gas
molecules diffuse in the sensing body from its periphery to
inside, while if inammable they react with the surface oxy-
gen of the oxide grains included. Obviously, the phenomena
involved therein are better analyzed based on diffusion equa-
tions or more precisely reactiondiffusion equations. Several
attempts have been made to analyze or improve semiconduc-
tor gas sensors based on diffusion equations [19]. As easily
anticipated, however, such analyses need a sensing body well
dened in geometry and porous structure because otherwise
we cannot settle down initial and/or boundary conditions for
diffusion equations properly. By using a thin lm device, we
have succeeded in disclosing target gas concentration pro-
le inside the thin lm under steady-state conditions [10] as
well as the behavior of the target gas concentration prole
under non-steady-state conditions during response

Corresponding author. Tel.: +81-92-583-7539; fax: +81-92-583-7538.

E-mail address: yamazoe@mm.kyushu-u.ac.jp (N. Yamazoe).
and recovery steps [11,12]. Those reports have cited only
the nal equations describing time-dependent gas concen-
tration proles in the response and recovery step. This pa-
per aims at reporting formulation of those equations in de-
tail, in the hope that doing this would facilitate further pro-
gresses in diffusion equation-base analyses of semiconductor
gas sensors.
2. Gas diffusion dynamics in response step
2.1. Modeling
A thin lm semiconductor gas sensor is usually fabricated
by depositing a porous thin layer of a semiconducting oxide
on a dense substrate. The target gas molecules diffuse in the
thin layer while reacting with the surface oxygen of the oxide
grains. As the layer thickness is far smaller than the layer
width, the gas diffusion can be taken as one-dimensional
along the direction of depth, as illustrated in Fig. 1(a). If
the reaction obeys rst-order kinetics, diffusion equation is
expressed as follows:
C(x, t)
t
= D

2
C(x, t)
x
2
kC(x, t). (1)
0925-4005/$ see front matter 2003 Elsevier B.V. All rights reserved.
doi:10.1016/S0925-4005(03)00529-X
N. Matsunaga et al. / Sensors and Actuators B 96 (2003) 226233 227
Fig. 1. Modeling of thin lm device.
Here C(x, t) is the target gas concentration, D the diffusion
coefcient, k the reaction constant, x the depth from surface
and t time. As a partial differential equation, Eq. (1) has been
solved by using Fourier transform, separation of variables
and difference method under various initial and boundary
conditions.
As reported previously [11,12], one can replace the ac-
tual model (Fig. 1(a)) by an equivalent model (Fig. 1(b)),
where the lm is combined with another identical lm in
place of contacting to the substrate. The boundary condi-
tion, C(x, t)/x = 0, at the bottom for the actual model is
now replaced by C(2L, t) = C
s
for the equivalent model.
The initial and boundary conditions of the equivalent model
are as follows:
Initial condition (A): C(x, 0) = (x) = 0,
Boundary conditions (A): C(0, t) =
1
(t) = C
s
and
C(2L, t) =
2
(t) = C
s
.
Here sufxes 1 and 2 mean the upper and lower surfaces of
the lm, respectively. (x),
1
(t) and
2
(t) are introduced
as general conditions for the convenience of mathematical
treatments before they are specied to be as indicated in the
later stage of derivation. Due to the symmetry of the bound-
ary conditions, the solution based on the equivalent model
should be also symmetric with respect to a mirror located
at x = L. Only the upper half (0 x L) of the solu-
tion is reduced to the solution based on the actual model.
These models give the same solution under steady-state
conditions. Under non-steady-state conditions, however,
the actual model fails to give a solution of the diffusion
equation because the boundary conditions are not sufcient
enough.
It is noted that the gas diffusion problem in the equiv-
alent model is formally the same as the heat conduction
problem through a bar, both ends of which are in contact
with heat sources [13]. In the same way as done in the
heat conduction, C(x, t) is divided into two functions as
follows:
C(x, t) = v(x, t) +w(x, t). (2)
Here v(x, t) is a homogeneous function, which satises
v(x, t)
t
= D

2
v(x, t)
x
2
. (3)
Initial condition (B): v(x, 0) = (x) = 0,
Boundary conditions (B): v(0, t) =
1
(t) = C
s
and
v(2L, t) =
2
(t) = C
s
,
under the indicated initial and boundary conditions (B). On
the other hand, w(x, t) is a inhomogeneous function, which
satises
w(x, t)
t
= D

2
w(x, t)
x
2
+f(x, t). (4)
Initial condition (C): w(x, 0) = 0,
Boundary conditions (C): w(0, t) = 0 and w(2L, t) = 0.
Here f(x, t) in our case is kC(x, t). Obviously w(x, t)
takes charge of taking into account modulation of the gas
concentration by the surface reaction. Eq. (3) is solved
straightforward by expanding v(x, t) into Fourier series,
whereas Eq. (4) is solved by convoluting v(x, t) and f(x, t),
as described below.
2.2. Derivation of v(x, t)
It is assumed that v(x, t) is expanded into Fourier series
as follows:
v(x, t) =

n=1
T
n
(t) sin
n
2L
x, (5)
T
n
(t) =
2
2L
_
2L
0
v(x, t) sin
n
2L
x dx. (6)
Here Fourier coefcient, T
n
(t), is a function of t. This means
that v(x, t) consists of polynomial functions, each of which is
given by a product of a t-dependent term and an x-dependent
term (separation of variables). Our task is now to obtain an
explicit form of T
n
(t). This is carried out as follows. The
following identity is well known for integration by parts:
_
b
a
fg

dx = [fg]
b
a

_
b
a
f

g dx.
By subjecting Eq. (6) to integration by parts twice, T
n
(t) is
transformed into the following form:
T
n
(t) =
2
n
[v(0, t) (1)
n
v(2L, t)]

4L
n
2

2
_
2L
0

2
v(x, t)
x
2
sin
n
2L
x dx. (7)
If one considers the boundary conditions (B) and Eq. (3),
T
n
(t) =
2
n
{
1
(t) (1)
n

2
(t)}

4L
n
2

2
1
D
_
2L
0
v(x, t)
t
sin
n
2L
x dx. (8)
On the other hand, differentiating equation (6) with t gives
the following equation:
dT
n
(t)
dt
=
2
2L
_
2L
0
v(x, t)
t
sin
n
2L
x dx. (9)
228 N. Matsunaga et al. / Sensors and Actuators B 96 (2003) 226233
Elimination of the integral terms by combining Eqs. (8)
and (9) followed by rearrangement gives rise to
dT
n
(t)
dt
+
2
n
T
n
(t) =
2
2
n
n
{
1
(t) (1)
n

2
(t)}. (10)
Here
n
is dened as follows and will be used frequently
hereafter.

n
=
n
2L

D. (11)
Differential equation (10) can be solved to give a general
expression of T
n
(t) as follows:
T
n
(t) = exp(
2
n
t)

_
c
n
+
2
2
n
n
_
t
0
exp(
2
n
){
1
()(1)
n

2
()} d
_
.
(12)
Here c
n
is the integral constant, which is determined to be
0 by the initial condition (B) ((x) = 0) as follows:
c
n
= T
n
(0) =
2
2L
_
2L
0
(x) sin
n
2L
x dx = 0. (13)
By substituting Eq. (13) and specic boundary conditions
(B) to Eq. (12), the nal form of T
n
(t) is obtained as
T
n
(t) =
2C
s

1 (1)
n
n
{1 exp(
2
n
t)}. (14)
Now Eq. (5) is rewritten as
v(x, t) =
2C
s

n=1
sin(n/2L)x
n
+

n=1
(1)
n1
sin(n/2L)x
n

n=1
1 (1)
n
n
exp(
2
n
t) sin
n
2L
x
_
. (15)
By using formula

n=1
sin n
n
=
_
1
2
( ) 0 < < 2,
0 = 0, 2
(16)
and

n=1
(1)
n1
sin n
n
=
_
1
2
< < ,
0 = , ,
(17)
the following expression of v(x, t) is obtained as
v(x, t) = C
s
_
1
2

n=1
1 (1)
n
n
exp(
2
n
t) sin
n
2L
x
_
,
(18)
where
n
= (n/2L)D
1/2
. This equation describes how tar-
get gas concentration prole develops inside the thin lm
under the conditions where the surface reaction can be ne-
glected (k = 0 s
1
). As illustrated in Fig. 2, the prole
Fig. 2. Target gas concentration prole inside the lm at various pe-
riods of time after the initiation of gas diffusion; C
s
= 1000 ppm,
D = 10
12
nm
2
s
1
, k = 0 s
1
and L = 1000 nm.
develops monotonously from the surface region (small x) to
the bottom region.
2.3. Derivation of w(x, t)
w(x, t) is assumed to be given by Fourier series as follows:
w(x, t) =

n=1
T
n
(t) sin
n
2L
x, (19)
T
n
(t) =
2
2L
_
2L
0
w(x, t) sin
n
2L
x dx. (20)
Obviously Eq. (19) satises the boundary conditions (C).
Similarly f(x, t) is also assumed to be a function of Fourier
series as follows:
f(x, t) =

n=1
f
n
(t) sin
n
2L
x, (21)
f
n
(t) =
2
2L
_
2L
0
f(x, t) sin
n
2L
x dx. (22)
The partial differentials of Eq. (4), w(x, t)/t and

2
w(x, t)/x
2
, can be calculated from Eq. (19). Thus the
following equation is derived from Eqs. (4), (19) and (21)

n=1
[T

n
(t) +
2
n
T
n
(t) f
n
(t)] sin
n
2L
x = 0, (23)
where
n
= (n/2L)D
1/2
. In order for this equation to
hold for any values of x, each of the coefcients preceding
sin(nx/2L) must be equal to 0
T

n
(t) +
2
n
T
n
(t) = f
n
(t). (24)
N. Matsunaga et al. / Sensors and Actuators B 96 (2003) 226233 229
The general solution of this ordinary differential equation is
given by
T
n
(t) = exp(
2
n
t)
_
c
n
+
_
t
0
exp(
2
n
)f
n
() d
_
. (25)
Integral constant, c
n
, is determined by the initial condition
(C)
c
n
= T
n
(0) =
2
2L
_
2L
0
w(x, 0) sin
n
2L
x dx = 0. (26)
Thus Eq. (25) is rearranged to
T
n
(t) =
_
t
0
exp{
2
n
(t )}f
n
() d. (27)
By substituting Eq. (22) into Eq. (27)
T
n
(t) =
2
2L
_
t
0
_
2L
0
exp{
2
n
(t )}f(x, ) sin
n
2L
x dx d.
(28)
Since f(x, t) = kC(x, t), T
n
(t) is nally expressed as fol-
lows:
T
n
(t) =
k
L
A
n
, (29)
A
n
=
_
t
0
_
2L
0
exp{
2
n
(t )}C(x, ) sin
n
2L
x dx d. (30)
Substitution of Eq. (29) into Eq. (19) gives
w(x, t) =
k
L

n=1
A
n
sin
n
2L
x. (31)
It is seen that T
n
(t) and w(x, t) are determined once denite
integral, A
n
, is determined. However, determination of A
n
is
not so simple. We need the information of v(x, t) to deter-
mine A
n
. By using Eqs. (18) and (31), C(x, t) is expressed
as follows:
C(x, t) = C
s
_
1
2

n=1
1 (1)
n
n
exp(
2
n
t) sin
n
2L
x
_

k
L

n=1
A
n
sin
n
2L
x. (32)
Obviously C(x, t) is determined by A
n
, while A
n
is dependent
on C(x, t) through Eq. (30). Thus A
n
should be determined
so as to satisfy Eqs. (30) and (32) simultaneously. To do
this, we select a mth term, A
m
A
m
=
_
t
0
_
2L
0
exp{
2
m
(t )}C(x, ) sin
m
2L
x dx d.
(33)
Insertion of Eq. (32) to this equation followed by rearrange-
ment gives rise to
A
m
= C
s
_
t
0
_
2L
0
exp{
2
m
(t )} sin
m
2L
x dx d

2C
s

_
t
0
_
2L
0
exp{
2
m
(t )}

n=1
_
1 (1)
n
n
exp(
2
n
) sin
n
2L
x
_
sin
m
2L
x dx d
k
L
_
t
0
_
2L
0
exp{
2
m
(t )

n=1
_
A
n
sin
n
2L
x
_
sin
m
2L
x dx d. (34)
The rst term can be calculated and summation in the second
and third terms is simplied if one considers that cross terms
where m = n vanishes since
_
2L
0
sin(mx) sin(nx) dx = 0. (35)
Thus A
m
is rearranged to consist of the following four terms:
A
m
=
2LC
s

1 (1)
m
m
1 exp(
2
m
t)

2
m

4C
s
(2n 1)
_
t
0
_
2L
0
exp{
2
m
t +(
2
m

2
2n1
)}
sin
(2n 1)
2L
x sin
m
2L
x dx d

k
L
A
2n1
_
t
0
_
2L
0
exp{
2
m
(t )}
sin
(2n 1)
2L
x sin
m
2L
x dx d

k
L
A
2n
_
t
0
_
2L
0
exp{
2
m
(t )}
sin
2n
2L
x sin
m
2L
x dx d. (36)
When m is even (m = 2n), the rst, second and third terms
become 0, so that Eq. (36) is transformed into the following
equation:
A
2n
_
1 +
k

2
2n
{1 exp(
2
2n
t)}
_
= 0. (37)
In order to satisfy this equation for any values of k,
2n
, and
t, A
2n
must be 0
A
2n
= 0. (38)
When m is odd (m = 2n 1), on the other hand, the fourth
term is 0, and the denite integrals in the second and third
230 N. Matsunaga et al. / Sensors and Actuators B 96 (2003) 226233
terms can be calculated, respectively, as follows:
_
t
0
_
2L
0
exp{
2
m
t +(
2
m

2
2n1
)}
sin
(2n 1)
2L
x sin
m
2L
x dx d
=
_
t
0
_
2L
0
exp(
2
2n1
t) sin
2
(2n 1)
2L
x dx d
= exp(
2
2n1
t)tL, (39)
_
t
0
_
2L
0
exp{
2
m
(t )} sin
(2n 1)
2L
x sin
m
2L
x dx d
=
_
t
0
_
2L
0
exp{
2
2n1
(t )} sin
2
(2n 1)
2L
x dx d
=
1

2
2n1
{1 exp(
2
2n1
t)}L. (40)
Thus we obtained the following expression of A
2n1
,
A
2n1
=
4LC
s
(2n 1)
1 (1 +
2
2n1
t) exp(
2
2n1
t)

2
2n1
+k{1 exp(
2
2n1
t)}
. (41)
2.4. Expression of C(x, t)
The nal expression of C(x, t) is obtained by inserting
Eqs. (38) and (41) into Eq. (32)
C(x, t) = C
s
_
1
2

n=1
1 (1)
n
n
_
exp(
2
n
t)
+
k{1 (1 +
2
n
t) exp(
2
n
t)}

2
n
+k{1 exp(
2
n
t)}
_
sin
n
2L
x
_
, (42)
where
n
= (n/2L)D
1/2
. Fig. 3 illustrates how target gas
concentration prole, C(x, t), develops inside the thin lm
with an elapse of time. Unlike the case of Fig. 2 (where
k = 0 s
1
), development of C(x, t) is hardly monotonous.
At a xed value of x, gas concentration goes through a max-
imum before reaching a steady level and this overshooting
tendency becomes more conspicuous as x increases. Obvi-
ously, the overshooting appears as a result of contribution
by the surface reaction. The concentration prole at t = ,
C(x, ), gives rise to the prole at the steady state. On the
other hand, the concentration prole at the steady state can
also be derived independently to be as follows by solving
Eq. (1) under the condition of C(x, t)/x = 0
C(x) = C
s
cosh{(L x)

k/D}
cosh(L

k/D)
. (43)
It can be shown by numerical calculation that C(x, )
coincides perfectly with C(x), despite a large difference in
expression.
Fig. 3. Target gas concentration prole inside the lm at various pe-
riods of time after the initiation of gas diffusion; C
s
= 1000 ppm,
D = 10
12
nm
2
s
1
, k = 10
8
s
1
and L = 1000 nm.
3. Gas diffusion dynamics in recovery step
3.1. Modeling
When target gas is switching off suddenly, the gas
molecules having entered in the thin lm start diffusing
out. Primary interest in this case is to know how the target
gas concentration decay with an elapse of time. Obviously,
the initial condition is C(x, 0) (Eq. (43)), and the boundary
conditions are C(0, t) = 0 and C(2L, t) = 0, as shown in
Fig. 4. Diffusion equation (1) can be solved under these
conditions essentially in the same manner as done previ-
ously. C(x, t) is assumed to consist of v(x, t) and w(x, t),
which satisfy Eqs. (3) and (4), respectively. However, the
initial and boundary conditions are altered as follows:
For v(x, t):
Initial condition (D), Eq. (43): v(x, 0) = (x),
Boundary conditions (D): v(0, t) =
1
(t) = 0 and
v(2L, t) =
2
(t) = 0.
Fig. 4. Equivalent model on recovery.
N. Matsunaga et al. / Sensors and Actuators B 96 (2003) 226233 231
For w(x, t):
Initial condition (E): w(x, 0) = 0,
Boundary conditions (E): w(0, t) = 0 and w(2L, t) =
0.
3.2. Derivation of v(x, t)
As carried out previously, v(x, t) is assumed to be ex-
panded in Fourier series, given by Eqs. (5) and (6). Initial
procedures to determine Fourier coefcients are utterly the
same as before until Eq. (12) is obtained. When the present
boundary conditions (D) are inserted in Eq. (12), we obtain
the following equation:
T
n
(t) = exp(
2
n
t)c
n
, (44)
where
n
= (n/2L)D
1/2
. The constant c
n
is determined
by the initial condition (D),
c
n
= T
n
(0) =
2
2L
_
2L
0
v(x, 0) sin
n
2L
x dx
=
C
s
Lcosh(L

k/D)
_
2L
0
cosh
_
(L x)
_
k
D
_
sin
n
2L
x dx
=
C
s
Lcosh(L

k/D)
B
n
. (45)
Here B
n
is given by the following denite integral:
B
n
=
_
2L
0
cosh
_
(L x)
_
k
D
_
sin
n
2L
x dx
=

D
n
{1 (1)
n
} cosh(L

k/D)

2
n
+k
. (46)
The above integration is rather tedious to carry out but pos-
sible anyhow as indicated. By combing Eqs. (44)(46), we
obtain
T
n
(t) =
C
s

D
L

n
{1 (1)
n
} exp(
2
n
t)

2
n
+k
. (47)
Insertion of Eq. (47) into Eq. (5) gives the nal expression
of v(x, t)
v(x, t) =
C
s

D
L

n=1

n
{1 (1)
n
} exp(
2
n
t)

2
n
+k
sin
n
2L
x.
(48)
3.3. Derivation of w(x, t) and C(x, t)
w(x, t) can be derived essentially in the same way as
done previously in Section 2.3. If we express w(x, t) and
f(x, t) as Fourier series functions dened by Eqs. (19)(22),
Fourier coefcient, T
n
(t), is again given by Eq. (28) because
the initial condition of w(x, t) is the same as before. This
leads to the same expression Eq. (31) for w(x, t). By using
Eqs. (31) and (48), C(x, t) is expressed as follows:
C(x, t) =
C
s

D
L

n=1

n
{1 (1)
n
} exp(
2
n
t)

2
n
+k
sin
n
2L
x

k
L

n=1
A
n
sin
n
2L
x, (49)
A
n
=
_
t
0
_
2L
0
exp{
2
n
(t )}C(x, ) sin
n
2L
x dx d. (30)
We have to determine A
n
so as to satisfy Eqs. (49) and
(30) simultaneously. To do this, we select a mth term, A
m
,
in Eq. (30) as done before, and Eq. (49) is inserted to A
m
.
By eliminating cross terms for m = n, A
m
is derived to be
expressed by
A
m
= 4C
s
_
t
0
_
2L
0
exp{
2
m
(t )}

2
2n1
exp(
2
2n1
)
(2n 1)(
2
2n1
+k)
sin
(2n 1)
2L
x sin
m
2L
x dx d

k
L
_
t
0
_
2L
0
exp{
2
m
(t )}A
2n1
sin
(2n 1)
2L
x sin
m
2L
x dx d

k
L
_
t
0
_
2L
0
exp{
2
m
(t )}A
2n
sin
2n
2L
x sin
m
2L
x dx d. (50)
If m is even (m = 2n), we can derive easily
A
2n
= 0 (51)
as done before. If m is odd (m = 2n 1), the rst and
second terms of Eq. (50) have non-zero values. By carrying
out integration in these terms, we obtain
A
2n1
=
4LC
s

2
2n1
(2n 1)(
2
2n1
+k)

2
2n1
t exp(
2
2n1
t)

2
2n1
+k{1 exp(
2
2n1
t)}
. (52)
3.4. Expression of C(x, t)
By inserting Eqs. (51) and (52), we obtain an polynomial
expression of C(x, t),
C(x, t) = 4C
s
_

n=1
1 (1)
n
2

_
R
n
kt

2
n
R
n

2
n
+k{1 exp(
2
n
t)}
__
, (53)
R
n
=

2
n
exp(
2
n
t)
n(
2
n
+k)
sin
n
2L
x, (54)
232 N. Matsunaga et al. / Sensors and Actuators B 96 (2003) 226233
Fig. 5. Target gas concentration prole inside the lm at various pe-
riods of time after the termination of gas diffusion; C
s
= 1000 ppm,
D = 10
12
nm
2
s
1
, k = 10
8
s
1
and L = 1000 nm.
where
n
= (n/2L)D
1/2
. Fig. 5 shows how target gas con-
centration prole vanishes from the thin lm with an elapse
of time under the indicated conditions. The concentration is
seen to decay more rapidly as x is smaller, indicating that
gas molecules at the surface region diffuse out rst. Fig. 6
illustrates how C(x, t) decays in a particular case where k =
0 s
1
and the other condition are the same as in Fig. 5. Gas
diffusion dynamics illustrated in Figs. 2 and 6 represent the
response and recovery processes for non-inammable gases
like NO
2
.
Fig. 6. Target gas concentration prole inside the lm at various pe-
riods of time after the termination of gas diffusion; C
s
= 1000 ppm,
D = 10
12
nm
2
s
1
, k = 0 s
1
and L = 1000 nm.
4. Conclusions
Gas diffusion dynamics in the response and recovery
processes of a thin lm semiconductor gas sensor have been
formulated mathematically based on an equivalent model
of the thin lm device and a simple reactiondiffusion
equation. With no assumptions being made in the deriva-
tion, the formulae obtained are valid as long as the starting
reactiondiffusion equation is valid. It is pointed out, how-
ever, that the reactiondiffusion equation itself includes an
assumption that the rate constant, k, is independent of t and
x. If this assumption is not the case, the formulae need to
be modied accordingly.
Acknowledgements
This research work was partially supported by the Min-
istry of Education, Science, Sports and Culture of Japan,
Grant-in-Aid for Scientic Research (B) (13450354).
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Biographies
Naoki Matsunaga received his BE and ME degrees in materials science
and engineering in 1998 and 2000, respectively, from Nagasaki Univer-
sity. He is now a doctor course student in Interdisciplinary Graduate
School of Engineering Sciences, Kyushu University and is currently
interested in the development of new preparation method involving semi-
conductive metal oxide sol suspension for high sensitivity.
Go Sakai has been a Research Associate at Kyushu University since
1996. He received his BE degree in applied chemistry in 1991 and PhD
in engineering in 1996 from Kyushu University. His current research
work is focused on development of chemical sensors as well as func-
tional inorganic materials.
Kengo Shimanoe has been an Associated Professor at Kyushu University
since 1999. He received his BE degree in applied chemistry in 1983 and
ME degree in 1985 from Kagoshima University and Kyushu University,
respectively. He joined the advanced material and technology laboratory
in Nippon Steel Corporation and has studied the electronic character-
ization on semiconductor surface and the electrochemical reaction on
materials. He received PhD in engineering in 1993 from Kyushu Univer-
sity. His current research interests include the development of chemical
sensors and ECD, as well as the analysis of solid surface.
Noboru Yamazoe has been a Professor at Kyushu University since 1981.
He received his BE degree in applied chemistry in 1963 and PhD in
engineering in 1969 from Kyushu University. His current research interests
are the development and application of functional inorganic materials.