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SEMICONDUCTOR DEVICES 2.

TRANSISTORS
POINTS TO REMEMBER 1. Transistors : A transistor is formed by sandwiching a thin layer of a p-type semiconductor between two layers of n-type semiconductors or by sandwiching a thin layer of an n-type semiconductor between two layers of p-type semiconductors. 2. Transistor means Transfer of resistance and is invented by John Bardeen, W.H. Brattain and William Shockley in 1948.
n p C n p n C p

3. Transistors are of two types i) n-p-n, ii) p-n-p 4. Transistor will mainly consists of three sections i) emitter, ii) base, iii) collector. 5. Emitter : a) It is heavily doped to get more number of majority charge carriers. b) Width of this region is slightly less than that of collector region. c) Its function is to supply majority carriers to the base. 6. Base : a) It is the middle section of the transistor. b) It is slightly doped. c) Width of this region is very thin (of the order of 106 m) d) Its function is to inject majority carriers to the collector. 7. Collector : a) It is moderately doped. a) This is physically large of all regions to get large number of charge carriers. b) Its function is to collect majority carriers from the base. c) In an n-p-n transistor, the direction of current is from base to emitter. d) In a p-n-p transistor, the direction of current is from emitter to base. 8. Transistor can be connected in three different configurations. i) Common base ii) Common emitter iii) Common collector a) In any transistor circuit IE=IB+IC.

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b) In common base configuration transistor, the current gain is =

IC . I E IC . I B

c) In common-emitter configuration transistor, the current gain is = d) Relation between , : =


. ; = 1 1+

9. For a common emitter configuration transistor, Input resistance


V R i = BE I B VCE

The output resistance

V R o = CE I C

IB

10. C-E configuration transistors are widely used as amplifiers because of its higher efficiency over the other configurations. 11. Current gain : Current gain =
i C iB

lies between 20 to 500.

12. Voltage gain AV : The voltage gain is the ratio of change in output voltage ( VCE) to the change in input voltage ( VBE). Voltage gain AV =
VCE VBE

13. Power gain AP : Power gain is the ratio of output signal power to the input signal power. AP = current gain x voltage gain. LONG ANSWER QUESTIONS

1. A.

Describe a transistor and explain its working.

The word transistor is from transfer of a signal towards a high resistance side . Pn p transistor : When a silicon or germanium crystal is doped with acceptor impurity and donor impurity so that three layers are formed, it is a transistor. The three layers are named as emitter, base and collector. Emitter region is heavily doped and collector region is moderately doped and the base region is lightly doped. Working : n-p-n Transistor

The figure shows n-p-n transistor with forward bias to the emitter - base junction and reverse bias to the collector base junction.The forward bias causes the electrons in the n-type emitter to flow towards the base. This is called emitter current IE.As these electrons flow through the p-type base, they tend to recombine with the sides.As the base is lightly doped, very few electrons (less than 5%) combine with the holes which constitutes base current IB.The remaining electrons (more than 95%) reach the collector region to constitute collector current IC. Therefore, IE = IB + IC The current in the n-p-n transistor is mainly due to the electrons. p n p Transistor

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The figure shows p-n-p transistor with forward bias to the emitter- base function and reverse bias to the collector- base junction. The forward bias causes the holes in the p-type emitter to flow towards the base. This is called emitter current IE. As these holes flow through the n type base, they tend to recombine will the electrons. As the base is lightly doped, very few holes (less than 5%) combine with electrons which constitute base current IB. The remaining holes (more than 95%) reach the collector region to constitute collector current IC. Therefore, IE = IB + IC. The current in the p-n-p transistor is mainly due to the majority holes and outside the circuit electron flow is present. 2. A. What is amplification? Explain the functioning of common emitter amplifier with necessary diagram. The process of increasing the strength of weak signal is known as amplification and the device used for this is called amplifier. The phenomenon of amplification is necessary in radio communication systems C-E configuration transistors are widely used as amplifiers because of its higher efficiency over the other configurations.

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iB iB Vi
t ~ E VBE B

di
iC VCE iE

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RL EC

Vo t

Figure shows an amplifier circuit using n-p-n transistor in common emitter mode. The battery EB provides the biasing voltage (forward) VBE for the base-emitter junction. The potential difference VCE (reverse bias) is maintained between collector and the emitter by the battery EC. The base - emitter junction is forward biased and so the electrons of the emitter flow towards the base. As the base region is very thin (of the order of micrometer) and the collector is also maintained at a positive

potential, most of the electrons cross the base region and move into the collector. The current iC is about 0.95iE to 0.99iE. A small change in the current iB in the base circuit controls the larger current iC in the collector circuit. This is the basis of amplification with the help of a transistor. The input signal, to be amplified, is connected in series with the biasing battery EB in the base circuit and output is taken across load resistor (RL). Current gain ( ) =
Change in collector current I C = I B Change in base current

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Change in collector voltage VCE = VBE Change in base vo l tage Power gain = Current gain x Voltage gain
Voltage gain AV =

SHORT ANSWER QUESTIONS 1. A. Explain the different transistor configurations with diagrams. There are 3 configurations for either n-p-n or p-n-p transistor namely 1. Common base (CB) 2. Common emitter (CB) 3. Common collector (CC) E 1. Common Base Configuration: In this configuration base is common to both input and output. Input is given across baseB
C B E E B C

VERY SHORT ANSWER QUESTIONS 1. i) What does the term transistor stand for ? ii) In a p n p transistor, how does the n region act? i) Transistor means transfer of resistance. ii) In a p-n-p transistor, n-region acts as base. 2. Draw the circuit symbols for p n p and n p n transistors? (March 2011, March 2010 March ,2009) ) A. The symbols of p n p and n p n transistors are as given below.

A.

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iii. Common collector configuration: In this configuration collector is common to both input and output. Input is given across basecollector and output is taken across Emitter collector.

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ii. Common emitter configuration: In this configuration emitter is common to both input and output. Input is given across baseEmitter and output is taken across collector-Emitter.

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Emitter and output is taken across base-collector.

3. A.

Define amplifier and amplification factor. Amplifier: Amplifier is a device used to raise the strength of weak signals. Amplification factor : Amplification factor is the ratio between output V voltage to the input voltage A = CE VBE

A.

Current gain = I c / I b = 4 103 /100 106 = 40 2 In a transistor = 45 , the change in the voltage across 5k resistor which is connected in collector circuit is 5 V. Find the change in base current.

A.

= 45; RL = 5K = 5 103 ; Change in voltage across 5k , V = 5V


Change in base current I B = ? Change in the collector current I C = V / RL

I b = (150 50 ) A = 100 A ; I c = ( 4.2 0.2 ) mA = 4mA

1.

In a transistor circuit the base current changes from 50 Ato 150 A . The corresponding change in the collector current is from 0.2 mA to 4.2 mA. Find the current gain.

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SOLVED PROBLEMS

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A.

A device used to give constant output voltage even when the input voltage changes is called voltage regulator or voltage stabilizer. Zener diode can be used as voltage regulator by operating it in the breakdown region in reverse bias condition

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4.

In which bias zener diode can be used as voltage regulator?

I C =

5 = 103 = 1mA 3 5 10 I C I B
I C

But =

103 = = 0.022mA Change in the base current I B = 45


UNSOLVED PROBLEMS:

Calculate the current amplification factor when change in collector current is 1 mA and change in base current is 20 A .

A.

I C = 1mA ; I B = 20 A
Amplification factor =

Current gain = 50; Voltage gain = ?

Voltage gain =

Voltage gain = 100


Assess yourself 1 Can two diode combined back to back as shown in the figure form a transistor? No. The base region becomes large and hence it looses the transistor action. Of the transistors npn and pnp which is faster?

A.

2.

A.

RL = 2k = 2000; Ri = 1k = 1000

VCE RL I C 2000 = = ( 50 ) VBE Ri I B 1000

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input resistance Ri = 1k . If the current gain is 50, calculate voltage gain of the amplifier.

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2.

For a transistor amplifier, if the collector load resistance RL = 2k and the

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I C 1mA 1000 = = = 50 20 I B 20 A

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A. 3.

n-p-n, due to the more mobility of electrons. In common base configuration, current gain () is defined as the ratio of collector current to emitter current i.e., = I C / I E , then what will be the value of ? Since I C < I E the value of is less than one. What will be the relation between and ?

A. 4. A.

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