DISCRETE SEMICONDUCTORS

DATA SHEET

M3D091

BLF278 VHF push-pull power MOS transistor

Product Specication Supersedes data of 1996 Oct 21 2003 Sep 19

Philips Semiconductors

Product Specication

VHF push-pull power MOS transistor

FEATURES High power gain Easy power control Good thermal stability Gold metallization ensures excellent reliability. APPLICATIONS Broadcast transmitters in the VHF frequency range. DESCRIPTION Dual push-pull silicon N-channel enhancement mode vertical D-MOS transistor encapsulated in a 4-lead, SOT262A1 balanced flange package with two ceramic caps. The mounting flange provides the common source connection for the transistors.
5 1 2

BLF278

PINNING - SOT262A1 PIN 1 2 3 4 5 drain 1 drain 2 gate 1 gate 2 source DESCRIPTION

d g s g 5 3
Top view

d
MAM098

CAUTION This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A, and SNW-FQ-302B.

Fig.1 Simplified outline and symbol.

QUICK REFERENCE DATA RF performance at Th = 25 C in a push-pull common source test circuit. MODE OF OPERATION CW, class-B CW, class-C CW, class-AB f (MHz) 108 108 225 VDS (V) 50 50 50 PL (W) 300 300 250 Gp (dB) >20 typ. 18 >14 typ. 16 D (%) >60 typ. 80 >50 typ. 55

WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO discs are not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste.

2003 Sep 19

Philips Semiconductors

Product Specication

VHF push-pull power MOS transistor

LIMITING VALUES In accordance with the Absolute Maximum System (IEC 60134). SYMBOL Per transistor section VDS VGS ID Ptot Tstg Tj drain-source voltage gate-source voltage drain current (DC) total power dissipation storage temperature junction temperature Tmb 25 C; total device; both sections equally loaded 65 125 20 18 500 150 200 PARAMETER CONDITIONS MIN.

BLF278

MAX.

UNIT

V V A W C C

THERMAL CHARACTERISTICS SYMBOL Rth j-mb Rth mb-h PARAMETER CONDITIONS VALUE max. 0.35 max. 0.15 UNIT K/W K/W

thermal resistance from junction total device; both sections to mounting base equally loaded. thermal resistance from mounting base to heatsink total device; both sections equally loaded.

MRA988

handbook, halfpage

100

handbook, halfpage

500

MGE616

ID (A)

Ptot (W)

400 (2) (1) (1) (2) 300

10 200

100

10

100 VDS (V)

500

40

80

120 Th (C)

160

Total device; both sections equally loaded. (1) Current is this area may be limited by RDSon. (2) Tmb = 25 C.

Total device; both sections equally loaded. (1) Continuous operation. (2) Short-time operation during mismatch.

Fig.2 DC SOAR.

Fig.3 Power derating curves.

2003 Sep 19

Philips Semiconductors

Product Specication

VHF push-pull power MOS transistor

CHARACTERISTICS Tj = 25 C unless otherwise specied. SYMBOL Per transistor section V(BR)DSS IDSS IGSS VGSth VGS gfs gfs1/gfs2 RDSon IDSX Cis Cos Crs Cd-f drain-source breakdown voltage VGS = 0; ID = 100 mA drain-source leakage current gate-source leakage current gate-source threshold voltage gate-source voltage difference of both sections forward transconductance forward transconductance ratio of both sections drain cut-off current input capacitance output capacitance feedback capacitance drain-ange capacitance VGS = 0; VDS = 50 V VGS = 20 V; VDS = 0 VDS = 10 V; ID = 50 mA VDS = 10 V; ID = 50 mA VDS = 10 V; ID = 5 A VDS = 10 V; ID = 5 A 125 2 4.5 0.9 6.2 0.2 25 480 190 14 5.4 PARAMETER CONDITIONS MIN. TYP.

BLF278

MAX.

UNIT

V mA A V mV S

2.5 1 4.5 100 1.1 0.3

drain-source on-state resistance VGS = 10 V; ID = 5 A VGS = 10 V; VDS = 10 V VGS = 0; VDS = 50 V; f = 1 MHz VGS = 0; VDS = 50 V; f = 1 MHz VGS = 0; VDS = 50 V; f = 1 MHz

A pF pF pF pF

VGS group indicator LIMITS (V) MIN. A B C D E F G H J K L M N 2.0 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 3.0 3.1 3.2 MAX. 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 3.0 3.1 3.2 3.3 O P Q R S T U V W X Y Z LIMITS (V) MIN. 3.3 3.4 3.5 3.6 3.7 3.8 3.9 4.0 4.1 4.2 4.3 4.4 MAX. 3.4 3.5 3.6 3.7 3.8 3.9 4.0 4.1 4.2 4.3 4.4 4.5

GROUP

GROUP

2003 Sep 19

Philips Semiconductors

Product Specication

VHF push-pull power MOS transistor

BLF278

handbook, halfpage

MGE623

handbook, halfpage

30

MGE622

T.C. (mV/K) 1

ID (A) 20

3 10 4

5 102

101

0 1 ID (A) 10 0 5 10 VGS (V) 15

VDS = 10 V. VDS = 10 V; Tj = 25 C.

Fig.4

Temperature coefficient of gate-source voltage as a function of drain current; typical values per section.

Fig.5

Drain current as a function of gate-source voltage; typical values per section.

handbook, halfpage

400

MGE621

handbook, halfpage

1200

MGE615

RDSon (m) 300

C (pF) 800

200

Cis 400

100

Cos

0 0 50 100 Tj (C) VGS = 10 V; ID = 5 A. 150

0 0 20 40 VDS (V) 60

VGS = 0; f = 1 MHz.

Fig.6

Drain-source on-state resistance as a function of junction temperature; typical values per section.

Fig.7

Input and output capacitance as functions of drain-source voltage; typical values per section.

2003 Sep 19

Philips Semiconductors

Product Specication

VHF push-pull power MOS transistor

BLF278

handbook, halfpage

400

MGE620

Crs (pF) 300

200

100

0 0 10 20 30 40 50 VDS (V)

VGS = 0; f = 1 MHz.

Fig.8

Feedback capacitance as a function of drain-source voltage; typical values per section.

APPLICATION INFORMATION Class-B operation RF performance in CW operation in a common source push-pull test circuit. Th = 25 C; Rth mb-h = 0.15 K/W unless otherwise specied. RGS = 4 per section; optimum load impedance per section = 3.2 + j4.3 (VDS = 50 V). MODE OF OPERATION CW, class-B CW, class-C Ruggedness in class-B operation The BLF278 is capable of withstanding a load mismatch corresponding to VSWR = 7:1 through all phases under the following conditions: VDS = 50 V; f = 108 MHz at rated load power. f (MHz) 108 108 VDS (V) 50 50 IDQ (A) 2 0.1 VGS = 0 PL (W) 300 300 Gp (dB) >20 typ. 22 typ. 18 D (%) >60 typ. 70 typ. 80

2003 Sep 19

Philips Semiconductors

Product Specication

VHF push-pull power MOS transistor

BLF278

handbook, halfpage

30

MGE682

MGE683

handbook, halfpage

80

Gp (dB) 20

D (%) (1) 60 (2) (1) 40 (2)

(2) (1)

10 20

0 0 200 400 PL (W) 600

0 0 200 400 PL (W) 600

Class-B operation; VDS = 50 V; IDQ = 2 0.1 A; f = 108 MHz; ZL = 3.2 + j4.3 (per section); RGS = 4 (per section). (1) Th = 25 C. (2) Th = 70 C.

Class-B operation; VDS = 50 V; IDQ = 2 0.1 A; f = 108 MHz; ZL = 3.2 + j4.3 (per section); RGS = 4 (per section). (1) Th = 25 C. (2) Th = 70 C.

Fig.9

Power gain as a function of load power; typical values.

Fig.10 Efficiency as a function of load power; typical values.

handbook, halfpage

600

MGE684

PL (W) (1) 400 (2)

200

0 0 5 10 Pi (W) 15

Class-B operation; VDS = 50 V; IDQ = 2 0.1 A; f = 108 MHz; ZL = 3.2 + j4.3 (per section); RGS = 4 (per section). (1) Th = 25 C. (2) Th = 70 C.

Fig.11 Load power as a function of input power; typical values.

2003 Sep 19

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C2 +VDD1 R11 IC1 R7 C36 C37 C11 C19 C25 C24

Philips Semiconductors

VHF push-pull power MOS transistor

handbook, full pagewidth

+VDD1 C20 C16 C21 R2 C8 C12

R8

L11

R3 C13 C9 C17 C22

50 input T1

C3 C1 R1

C4

,,,, ,,,, ,,,, ,,,,

R4 D.U.T. L12 L9 L13 L17 L19 L1 L3 L5 L7 C5 C6 C7 C26 C27 C28 C29 L2 L4 L6 L8 L10 L14 L18 L20 R5 L15 C10 C14 C18 A R6 C15 C35 R9 L16 C23

C31

C33 R10

,,
L21

50 output

C30 C34

C32

,,
L23
MGE688

L22

Product Specication

BLF278

+VDD2

Fig.12 Class-B test circuit at f = 108 MHz.

Philips Semiconductors

Product Specication

VHF push-pull power MOS transistor

List of components (see Figs 12 and 13). COMPONENT DESCRIPTION VALUE 22 pF, 500 V 100 pF + 68 pF in parallel, 500 V 5 to 60 pF 2 100 pF + 1 120 pF in parallel, 500 V 100 nF, 500 V DIMENSIONS

BLF278

CATALOGUE NO.

C1, C2, C33, C34 multilayer ceramic chip capacitor; note 1 C3, C4 C5, C6, C28 C7 multilayer ceramic chip capacitor; note 1 lm dielectric trimmer multilayer ceramic chip capacitor; note 1 multilayer ceramic chip capacitor

2222 809 08003

C8, C11, C12, C15, C16, C19, C36 C9, C10, C13, C14, C20, C25 C17, C18, C22, C23 C21, C24, C35 C26

2222 852 47104

multilayer ceramic chip capacitor; note 1 multilayer ceramic chip capacitor; note 1 electrolytic capacitor multilayer ceramic chip capacitor; note 1 multilayer ceramic chip capacitor; note 1 multilayer ceramic chip capacitor; note 1 lm dielectric trimmer multilayer ceramic chip capacitor; note 1 stripline; note 2 stripline; note 2 stripline; note 2 stripline; note 2 stripline; note 2 2 grade 3B Ferroxcube wideband HF chokes in parallel 4 turns enamelled 2 mm copper wire

1 nF, 500 V 470 pF, 500 V 10 F, 63 V 2 15 pF + 1 18 pF in parallel, 500 V 3 15 pF in parallel, 500 V 2 18 pF + 1 15 pF in parallel, 500 V 2 to 18 pF 3 43 pF in parallel, 500 V 43 43 43 43 43 length 57.5 mm width 6 mm length 29.5 mm width 6 mm length 14 mm width 6 mm length 6 mm width 6 mm length 17.5 mm width 6 mm 4312 020 36642 85 nH length 13.5 mm int. dia. 10 mm leads 2 7 mm length 19.5 mm width 6 mm 2222 809 09006

C27 C29

C30 C31, C32 L1, L2 L3, L4 L5, L6 L7, L8 L9, L10 L11, L16 L12, L15

L13, L14

stripline; note 2

43

2003 Sep 19

Philips Semiconductors

Product Specication

VHF push-pull power MOS transistor

BLF278

COMPONENT L17, L18 L19, L20 L21, L23 L22

DESCRIPTION stripline; note 2 stripline; note 2 stripline; note 2 semi-rigid cable; note 3 43 43 50 50

VALUE

DIMENSIONS length 24.5 mm width 6 mm length 66 mm width 6 mm length 160 mm width 4.8 mm ext. dia. 3.6 mm outer conductor length 160 mm

CATALOGUE NO.

R1 R2, R7 R3, R6 R4, R5 R8, R9 R10 R11 IC1 T1 Notes

metal lm resistor 10 turn potentiometer metal lm resistor metal lm resistor metal lm resistor metal lm resistor metal lm resistor voltage regulator 78L05 1:1 Balun; 7 turns type 4C6 50 coaxial cable wound around toroid

10 , 0.4 W 50 k 3 12.1 in parallel, 0.4 W 10 ; 0.4 W 10 5%, 1 W 4 10 in parallel, 1 W 5.11 k, 1 W 14 9 5 mm 4322 020 90770

1. American Technical Ceramics capacitor, type 100B or capacitor of same quality. 2. L1 to L10, L13, L14, L17 to L21 and L23 are striplines on a double copper-clad printed-circuit board, with fibre-glass PTFE dielectric (r = 2.2), thickness 116 inch; thickness of copper sheet 2 35 m. 3. L22 is soldered on to stripline L21.

2003 Sep 19

10

Philips Semiconductors

Product Specication

VHF push-pull power MOS transistor

BLF278

handbook, full pagewidth

130 strap

150

strap strap

strap

strap

100

strap strap

strap

C20 V DD1 50 input T1 IC1 R11 C36 C11 C8 R2 and R7 C9 C13 R3 R4 C7 L5 L6 R5 R6 C10 C14 C18 C23 L7 L8 C17 slider R2 C12 C1 C3 R1 C2 C4 C35 C22 L11 C16 R8 L11 V DD1 L12 L9 L10 L13 C26 L14 L15 L17 C27 L18 L21 C31 L19 C29 C28 L20 L23 V DD2 R10 C30 C34 C32 C33 L22 C21 50 output

L1 C5 L2 C6

L3 L4

C15 slider R7

L16 R9 L16 C19

C24
MBC438

C25

Dimensions in mm. The circuit and components are situated on one side of the PTFE fibre-glass board, the other side being fully metallized to serve as an earth. Earth connections are made by means of copper straps for a direct contact between upper and lower sheets.

Fig.13 Printed-circuit board and component layout for 108 MHz class-B test circuit.

2003 Sep 19

11

Philips Semiconductors

Product Specication

VHF push-pull power MOS transistor

BLF278

MGE685

handbook, halfpage

handbook, halfpage

MGE686

Zi () 1

ri

ZL () 6

RL

XL 0 4

1 xi

0 25 75 125 f (MHz) 175 25 75 125 f (MHz) 175

Class-B operation; VDS = 50 V; IDQ = 2 0.1 A; RGS = 4 (per section); PL = 300 W.

Class-B operation; VDS = 50 V; IDQ = 2 0.1 A; RGS = 4 (per section); PL = 300 W.

Fig.14 Input impedance as a function of frequency (series components); typical values per section.

Fig.15 Load impedance as a function of frequency (series components); typical values per section.

handbook, halfpage

30

MGE687

Gp (dB) 20
handbook, halfpage

10

Zi

ZL

MBA379

0 25 75 125 f (MHz) 175

Class-B operation; VDS = 50 V; IDQ = 2 0.1 A; RGS = 4 (per section); PL = 300 W.

Fig.16 Definition of MOS impedance.

Fig.17 Power gain as a function of frequency; typical values per section.

2003 Sep 19

12

Philips Semiconductors

Product Specication

VHF push-pull power MOS transistor

BLF278

Class-AB operation RF performance in CW operation in a common source push-pull test circuit. Th = 25 C; Rth mb-h = 0.15 K/W unless otherwise specied. RGS = 2.8 per section; optimum load impedance per section = 0.74 + j2 ; (VDS = 50 V). MODE OF OPERATION CW, class-AB f (MHz) 225 VDS (V) 50 IDQ (A) 2 0.5 PL (W) 250 Gp (dB) >14 typ. 16 D (%) >50 typ. 55

Ruggedness in class-AB operation The BLF278 is capable of withstanding a load mismatch corresponding to VSWR = 7:1 through all phases under the following conditions: VDS = 50 V; f = 225 MHz at rated output power.

2003 Sep 19

13

Philips Semiconductors

Product Specication

VHF push-pull power MOS transistor

BLF278

MGE614

handbook, halfpage

20

handbook, halfpage

60

MGE612

(1) Gp (dB) (2) D (%) (1) 40 (2)

10

20

0 0 100 200 PL (W) Class-AB operation; VDS = 50 V; IDQ = 2 0.5 A; f = 225 MHz; ZL = 0.74 + j2 (per section); RGS = 2.8 (per section). (1) Th = 25 C. (2) Th = 70 C. 300

0 0 100 200 PL (W) 300

Class-AB operation; VDS = 50 V; IDQ = 2 0.5 A; f = 225 MHz; ZL = 0.74 + j2 (per section); RGS = 2.8 (per section). (1) Th = 25 C. (2) Th = 70 C.

Fig.18 Power gain as a function of load power; typical values.

Fig.19 Efficiency as a function of load power; typical values.

handbook, halfpage

400

MGE613

PL (W) 300 (1) (2)

200

100

0 0 5 10 Pi (W) 15

Class-AB operation; VDS = 50 V; IDQ = 2 0.5 A; f = 225 MHz; ZL = 0.74 + j2 (per section); RGS = 2.8 (per section). (1) Th = 25 C. (2) Th = 70 C.

Fig.20 Load power as a function of input power; typical values.

2003 Sep 19

14

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R2 C10 R8 C15 C11 C8 C16 C24 L14 A R3 50 input

Philips Semiconductors

handbook, full pagewidth

VHF push-pull power MOS transistor

+VDD1 C14

C22 C23

,,, ,,,
L1 L2 L3 +VDD1 R11

C3 C1 R1 C2 C4

,,, ,,,
R4 L4 L6 L8 L10 C5 C6 C7 L5 L7 L9 L11 R5 C9 C12 A R6 C13 C35 R7 C37 C36

D.U.T.

,,,,
L15 L12 L18 L20

C31

C33 R10

,,
L22

,,,,
C20 C21 C28 C29 L13 L19 L21 L16 C17 C25 C18 R9 L17 C26 C19 C27 +VDD2

C30 C34

C32

,,
L23 L24
MGE617

50 output

15

IC1 C38

Product Specication

BLF278

Fig.21 Class-AB test circuit at f = 225 MHz.

Philips Semiconductors

Product Specication

VHF push-pull power MOS transistor

List of components (see Figs 21 and 22). COMPONENT C1, C2 C3, C4, C31, C32 C5 C6, C30 C7 C8, C9, C15, C18 C10, C13, C14, C19, C36 C11, C12 C16, C17 C20 C21 C22, C27, C37, C38 C23, C26, C35 C24, C25 C28 DESCRIPTION multilayer ceramic chip capacitor; note 1 multilayer ceramic chip capacitor; note 1 lm dielectric trimmer lm dielectric trimmer multilayer ceramic chip capacitor; note 1 MKT lm capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor; note 1 electrolytic capacitor multilayer ceramic chip capacitor; note 1 lm dielectric trimmer multilayer ceramic chip capacitor; note 1 electrolytic capacitor multilayer ceramic chip capacitor; note 1 multilayer ceramic chip capacitor; note 1 multilayer ceramic chip capacitor; note 1 multilayer ceramic chip capacitor; note 1 stripline; note 2 semi-rigid cable; note 3 VALUE 27 pF, 500 V 3 18 pF in parallel, 500 V 4 to 40 pF 2 to 18 pF 100 pF, 500 V 1 F, 63 V 100 nF, 50 V 2 1 nF in parallel, 500 V 220 F, 63 V 3 33 pF in parallel, 500 V 2 to 9 pF 1 nF, 500 V 10 F, 63 V 2 470 pF in parallel, 500 V 2 10 pF + 1 18 pF in parallel, 500 V 2 5.6 pF in parallel, 500 V 5.6 pF, 500 V 50 50 length 80 mm width 4.8 mm ext. dia. 3.6 mm outer conductor length 80 mm length 24 mm width 6 mm length 14.5 mm width 6 mm length 4.4 mm width 6 mm length 3.2 mm width 6 mm length 15 mm width 6 mm DIMENSIONS

BLF278

CATALOGUE NO.

2222 809 08002 2222 809 09006

2222 371 11105 2222 852 47104

2222 809 09005

C29 C33, C34 L1, L3, L22, L24 L2, L23

L4, L5 L6, L7 L8, L9 L10, L11 L12, L13

stripline; note 2 stripline; note 2 stripline; note 2 stripline; note 2 stripline; note 2

43 43 43 43 43

2003 Sep 19

16

Philips Semiconductors

Product Specication

VHF push-pull power MOS transistor

BLF278

COMPONENT L14, L17 L15, L16

DESCRIPTION 2 grade 3B Ferroxcube wideband HF chokes in parallel 134 turns enamelled 2 mm copper wire stripline; note 2 stripline; note 2 metal lm resistor 10 turns potentiometer metal lm resistor metal lm resistor metal lm resistor metal lm resistor metal lm resistor voltage regulator 78L05

VALUE

DIMENSIONS

CATALOGUE NO. 4312 020 36642

40 nH

int. dia. 10 mm leads 2 7 mm space 1 mm length 13 mm width 6 mm length 29.5 mm width 6 mm

L18, L19 L20, L21 R1 R2, R7 R3, R6 R4, R5 R8, R9 R10 R11 IC1 Notes

43 43 10 , 0.4 W 50 k 1 k, 0.4 W 2 5.62 , in parallel, 0.4 W 10 5%, 1 W 4 42.2 in parallel, 1 W 5.11 k, 1 W

1. American Technical Ceramics capacitor, type 100B or other capacitor of the same quality. 2. L1, L3 to L13, L18 to L22 and L24 are microstriplines on a double copper-clad printed-circuit board, with fibre-glass reinforced PTFE dielectric (r = 2.2), thickness 116 inch; thickness of copper sheet 2 35 m. 3. L2 and L23 are soldered on to striplines L1 and L24 respectively.

2003 Sep 19

17

Philips Semiconductors

Product Specication

VHF push-pull power MOS transistor

BLF278

handbook, full pagewidth

119

130

strap strap

strap Hollow rivets strap Hollow rivets

strap 100 strap

strap strap

C24 VDD1 L2 L1 C1 50 input R1 C2 C4 C13 R6 L3 slider R7 R11 C38 IC1 to R2,R7 C36 C16 C37 C11 C14 L14 R8 L14 L15 L12 C20 L13

C22 C23 L22 VDD1 R10 50 output

C15

C35 slider R2

C3

C8 C10 R3 R4 L4 C6 L6 L8 L10 C5 C7 L7 L9 L11 L5 R5 C9

C30 C31C33 L18 C28 L20 C21 C29 L19 L21 C34 C32 L16 VDD2 L23 C26 C27

C12

C17

C18

L17 R9 L17 C19 C25

L24

MBC436

Dimensions in mm. The circuit and components are situated on one side of the PTFE fibre-glass board, the other side being fully metallized to serve as an earth. Earth connections are made by means of copper straps for a direct contact between upper and lower sheets.

Fig.22 Printed-circuit board and component layout for 225 MHz class-AB test circuit.

2003 Sep 19

18

Philips Semiconductors

Product Specication

VHF push-pull power MOS transistor

BLF278

handbook, halfpage

MGE611

handbook, halfpage

MGE625

zi () 1 ri

ZL () 2

XL

0 RL

xi 1

2 150

200

f (MHz)

250

0 150

200

f (MHz)

250

Class-AB operation; VDS = 50 V; IDQ = 2 0.5 A; RGS = 2.8 (per section); PL = 250 W.

Class-AB operation; VDS = 50 V; IDQ = 2 0.5 A; RGS = 2.8 (per section); PL = 250 W.

Fig.23 Input impedance as a function of frequency (series components); typical values per section.

Fig.24 Load impedance as a function of frequency (series components); typical values per section.

handbook, halfpage

20

MGE624

Gp (dB)

handbook, halfpage

10

Zi

ZL

MBA379

0 150

200

f (MHz)

250

Class-AB operation; VDS = 50 V; IDQ = 2 0.5 A; RGS = 2.8 (per section); PL = 250 W.

Fig.25 Definition of MOS impedance.

Fig.26 Power gain as a function of frequency; typical values per section.

2003 Sep 19

19

Philips Semiconductors

Product Specication

VHF push-pull power MOS transistor

BLF278 scattering parameters VDS = 50 V; ID = 500 mA; note 1 f (MHz) |s11| 5 10 20 30 40 50 60 70 80 90 100 125 150 175 200 250 300 350 400 450 500 600 700 800 900 1000 Note 0.87 0.88 0.88 0.88 0.89 0.91 0.92 0.93 0.94 0.95 0.95 0.97 0.97 0.98 0.98 0.99 0.99 0.99 0.99 0.99 0.99 0.99 0.99 0.99 0.99 0.99 s11 142.1 159.8 169.0 171.2 172.2 172.9 173.5 174.1 174.7 175.2 175.7 176.9 177.9 178.7 179.5 179.2 178.1 177.1 176.1 175.1 174.2 172.4 170.7 168.9 167.1 165.2 |s21| 60.05 32.09 15.70 9.98 6.99 5.24 4.08 3.26 2.66 2.22 1.88 1.27 0.91 0.69 0.54 0.35 0.25 0.19 0.14 0.11 0.09 0.07 0.05 0.04 0.04 0.04 s21 104.3 91.4 77.3 68.4 61.0 55.0 49.6 44.9 41.0 37.5 34.0 26.8 22.7 19.5 16.0 12.1 9.1 8.2 7.2 8.1 9.7 14.8 24.0 35.6 46.0 60.3 |s12| 0.00 0.00 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.00 0.00 0.00 0.00 0.00 0.00 0.01 0.01 0.01 0.01 0.02 0.02 0.02 0.03 0.03 0.04 0.04 s12 19.4 0.68 13.4 3.4 4.4 10.3 15.0 18.3 19.8 19.7 18.0 1.9 35.3 65.3 78.0 86.7 87.8 90.3 91.4 92.2 91.5 91.4 91.6 92.5 93.1 94.1 |s22| 0.83 167.5 0.62 0.64 0.66 0.70 0.74 0.78 0.80 0.83 0.85 0.88 0.91 0.94 0.95 0.96 0.98 0.98 0.99 0.99 0.99 0.99 0.99 1.00 1.00 1.00

BLF278

s22 160.9 165.8 177.6 175.8 171.2 168.1 166.8 166.5 166.5 166.7 167.4 169.4 170.0 170.8 172.4 174.0 175.5 176.5 177.6 178.3 179.2 179.5 178.3 177.1 176.0 175.0

1. For more extensive s-parameters see internet: http://www.semiconductors.philips.com/markets/communications/wirelesscommunications/broadcast.

2003 Sep 19

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Philips Semiconductors

Product Specication

VHF push-pull power MOS transistor

PACKAGE OUTLINE Flanged double-ended ceramic package; 2 mounting holes; 4 leads

BLF278

SOT262A1

A F D1

U1 q H1 C w2 M C M

U2

E1

5
A w1 M A M B M w3 M

3
b e

5 scale

10 mm

DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT mm inches A 5.77 5.00 b 5.85 5.58 c 0.16 0.10 D D1 e E E1 F 1.78 1.52 H H1 p 3.28 3.02 Q 2.85 2.59 q 27.94 U1 34.17 33.90 U2 9.91 9.65 w1 0.25 w2 0.51 w3 0.25

22.17 21.98 10.27 10.29 11.05 21.46 21.71 10.05 10.03

21.08 17.02 19.56 16.51

0.227 0.230 0.006 0.873 0.865 0.404 0.405 0.070 0.830 0.670 0.129 0.112 1.345 0.390 1.100 0.010 0.020 0.010 0.435 0.197 0.220 0.004 0.845 0.855 0.396 0.396 0.060 0.770 0.650 0.119 0.102 1.335 0.380

OUTLINE VERSION SOT262A1

REFERENCES IEC JEDEC EIAJ

EUROPEAN PROJECTION

ISSUE DATE 99-03-29

2003 Sep 19

21

Philips Semiconductors

Product Specication

VHF push-pull power MOS transistor

DATA SHEET STATUS LEVEL I DATA SHEET STATUS(1) Objective data PRODUCT STATUS(2)(3) Development DEFINITION

BLF278

This data sheet contains data from the objective specication for product development. Philips Semiconductors reserves the right to change the specication in any manner without notice. This data sheet contains data from the preliminary specication. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specication without notice, in order to improve the design and supply the best possible product. This data sheet contains data from the product specication. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notication (CPCN).

II

Preliminary data Qualication

III

Product data

Production

Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. 3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. DEFINITIONS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. DISCLAIMERS Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes Philips Semiconductors reserves the right to make changes in the products including circuits, standard cells, and/or software described or contained herein in order to improve design and/or performance. When the product is in full production (status Production), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified.

2003 Sep 19

22

Philips Semiconductors a worldwide company

Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 For sales ofces addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.

Koninklijke Philips Electronics N.V. 2003

SCA75

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.

Printed in The Netherlands

613524/04/pp23

Date of release: 2003

Sep 19

Document order number:

9397 750 11599