ON Semiconductor

NPN Plastic Silicon Power

Transistor

BD791
ON Semiconductor Preferred Device

. . . designed for low power audio amplifier and lowcurrent, high

speed switching applications.

High CollectorEmitter Sustaining Voltage

4 AMPERE
POWER TRANSISTOR
SILICON
100 VOLTS
15 WATTS

VCEO(sus) = 100 Vdc (Min)

High DC Current Gain @ IC = 200 mAdc
hFE = 40250
Low CollectorEmitter Saturation Voltage
VCE(sat) = 0.5 Vdc (Max) @ IC = 500 mAdc
High Current Gain Bandwidth Product
fT = 40 MHz (Min) @ IC = 100 mAdc)

*MAXIMUM RATINGS

Rating

Symbol

Max

Unit

VCEO

100

Vdc

CollectorBase Voltage

VCB

100

Vdc

EmitterBase Voltage

VEBO

6.0

Vdc

Collector Current Continuous

Peak

IC

4.0
8.0

Adc

Base Current

IB

1.0

Adc

Total Power Dissipation @ TC = 25
C

Derate above 25
C

PD

15
0.12

Watts
W/
C

TJ,Tstg

65 to +150

C

Symbol

Max

Unit

RJC

8.34

C/W

CollectorEmitter Voltage

Operating and Storage Junction

Temperature Range

CASE 7709
TO225AA TYPE

THERMAL CHARACTERISTICS
Characteristic

16

1.6

12

1.2

8.0

0.8

4.0

0.4

0
20

40

60

100
120
80
T, TEMPERATURE (C)

140

TA
PD, POWER DISSIPATION (WATTS)

TC
PD, POWER DISSIPATION (WATTS)

Thermal Resistance, Junction to Case

0
160

Figure 1. Power Derating

Preferred devices are ON Semiconductor recommended choices for future use and best overall value.
Semiconductor Components Industries, LLC, 2001

March, 2001 Rev. 2

Publication Order Number:

BD791/D

BD791

*ELECTRICAL CHARACTERISTICS (TC = 25
C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

100

100

1.0
0.1

Adc
mAdc

1.0

Adc

40
20
10
5.0

250

0.5
1.0
2.5
3.0

OFF CHARACTERISTICS

CollectorEmitter Sustaining Voltage (1)

(IC = 10 mAdc, IB = 0)

VCEO(sus)

Collector Cutoff Current

(VCE = 50 Vdc, IB = 0)

ICEO

Collector Cutoff Current

(VCE = 100 Vdc, VBE(off) = 1.5 Vdc)
(VCE = 50 Vdc, VBE(off) = 1.5 Vdc, TC = 125
C)

ICEX

Emitter Cutoff Current (VEB = 6.0 Vdc, IC = 0)

IEBO

Vdc

Adc

ON CHARACTERISTICS (1)

DC Current Gain
(IC = 200 mAdc, VCE = 3 0 Vdc)
(IC = 1.0 Adc, VCE = 3.0 Vdc)
(IC = 2.0 Adc, VCE = 3.0 Vdc)
(IC = 4.0 Adc, VCE = 3.0 Vdc)

hFE

Collector Emitter Saturation Voltage

(IC = 500 mAdc, IB = 50 mAdc)
(IC = 1.0 Adc, IB = 100 mAdc)
(IC = 2.0 Adc, IB = 200 mAdc)
(IC = 4.0 Adc, IB = 800 mAdc)

VCE(sat)

Vdc

BaseEmitter Saturation Voltage (IC = 2.0 Adc, IB = 200 mAdc)

VBE(sat)

1.8

Vdc

BaseEmitter On Voltage (IC = 200 mAdc, VCE = 3.0 Vdc)

VBE(on)

1.5

Vdc

fT

40

MHz

50

10

DYNAMIC CHARACTERISTICS

CurrentGain Bandwidth Product

(IC = 100 mAdc, VCE = 10 Vdc, f = 10 MHz)
Output Capacitance
(VCB = 10 Vdc, IC = 0, f = 0.1 MHz)

Cob

SmallSignal Current Gain

(IC = 200 mAdc, VCE = 10 Vdc, f = 1.0 kHz)

hfe

pF

*Indicates JEDEC Registered Data.

(1) Pulse Test: Pulse Width  300 s, Duty Cycle  2.0%.

+ 30 V
25 s

500
VCC

300
200

RC

+ 11 V

SCOPE

- 9.0 V
tr, tf  10 ns
DUTY CYCLE = 1.0%

51

t, TIME (ns)

RB

D1
-4V

RB AND RC VARIED TO OBTAIN DESIRED CURRENT LEVELS

100
70
50
tr

30
20
10
7.0
5.0
0.04

D1 MUST BE FAST RECOVERY TYPE, eg

MBR340 USED ABOVE IB
100 mA
MSD6100 USED BELOW IB
100 mA
FOR PNP TEST CIRCUIT, REVERSE ALL POLARITIES.

TJ = 25C
VCC = 30 V
IC/IB = 10

Figure 2. Switching Time Test Circuit

td @ VBE(off) = 5.0 V

0.06 0.1

1.0
0.2
0.4 0.6
IC, COLLECTOR CURRENT (AMP)

Figure 3. TurnOn Time

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2

2.0

4.0

r(t), TRANSIENT THERMAL RESISTANCE

(NORMALIZED)

BD791
1.0
0.7
0.5

D = 0.5
0.2

0.3
0.2

0.1
P(pk)

0.05

0.1
0.07
0.05

0.02

t1

0.01

0.03
0.02

0 (SINGLE PULSE)

0.01
0.02

RJC(t) = r(t) RJC

RJC = 8.34C/W MAX

0.05

0.1

t2

DUTY CYCLE, D = t1/t2

0.2

0.5

1.0

2.0
t, TIME (ms)

5.0

10

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) - TC = P(pk) RJC(t)
20

50

100

200

Figure 4. Thermal Response

10
5.0

IC, COLLECTOR CURRENT (AMP)

1.0 ms

2.0
TJ = 150C

0.5

5.0 ms
BONDING WIRE LIMITED
THERMALLY LIMITED @ TC = 25C
(SINGLE PULSE)
SECOND BREAKDOWN LIMITED
CURVES APPLY BELOW RATED VCEO

0.1
0.05
0.02
0.01

500 s

dc

1.0

There are two limitations on the power handling ability of

a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC VCE
limits of the transistor that must be observed for reliable
operation, i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 5 is based on TJ(pk) = 150
C: TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided TJ(pk)
 150
C, TJ(pk) may be calculated from the data in
Figure 4. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.

100 s

1.0

2.0 3.0
5.0 7.0 10
50 70 100
20 30
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

Figure 5. Active Region Safe Operating Area

2000

t, TIME (ns)

ts

TJ = 25C
C, CAPACITANCE (pF)

1000
700
500

200

TJ = 25C
VCC = 30 V
IC/IB = 10
IB1 = IB2

300
200
100
70
50
30
20
0.04 0.06

tf

100

Cib

70
50

Cob

30
20

0.1

0.2
0.4 0.6
1.0
IC, COLLECTOR CURRENT (AMP)

2.0

10
1.0

4.0

Figure 6. TurnOff Time

2.0

3.0
5.0 7.0
10 20 30
VR, REVERSE VOLTAGE (VOLTS)

Figure 7. Capacitance

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3

50

70 100

BD791
500
300

1.4
VCE = 1.0 V
VCE = 3.0 V

TJ = 150C

V, VOLTAGE (VOLTS)

25C

100
70
50

-
55C

30
20

1.0
0.8

VBE(sat) @ IC/IB = 10

0.6

VBE(on) @ VCE = 3.0 V

0.4

IC/IB = 10

0.2
7.0
5.0
0.04 0.06

0.1

0.2
0.4 0.6
1.0
IC, COLLECTOR CURRENT (AMP)

0
0.04 0.06 0.1

4.0

2.0

5.0

VCE(sat)
0.4

0.2

*APPLIES FOR IC/IB hFE/3

+
1.5
+
1.0
+
0.5
0

25C to 150C

*VC FOR VCE(sat)

- 55C to 25C

-
0.5
-
1.0
-
1.5
-
2.0

25C to 150C
VB FOR VBE

-
2.5
0.04 0.06

1.0

Figure 9. On Voltage

+
2.5
+
2.0

0.6

IC, COLLECTOR CURRENT (AMP)

Figure 8. DC Current Gain

V, TEMPERATURE COEFFICIENTS (mV/C)

hFE , DC CURRENT GAIN

200

TJ = 25C

1.2

0.1

- 55C to 25C
0.2

0.4

0.6

1.0

IC, COLLECTOR CURRENT (AMP)

Figure 10. Temperature Coefficient

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4

2.0

4.0

2.0

4.0

BD791
PACKAGE DIMENSIONS
CASE 7709
TO225AA TYPE
ISSUE W
B
U

Q
A

NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.

C
M

1 2 3

V
G
S

R
0.25 (0.010)

D 2 PL
0.25 (0.010)

DIM
A
B
C
D
F
G
H
J
K
M
Q
R
S
U
V

INCHES
MIN
MAX
0.425
0.435
0.295
0.305
0.095
0.105
0.020
0.026
0.115
0.130
0.094 BSC
0.050
0.095
0.015
0.025
0.575
0.655
5
TYP
0.148
0.158
0.045
0.065
0.025
0.035
0.145
0.155
0.040
---

STYLE 1:
PIN 1. EMITTER
2. COLLECTOR
3. BASE

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5

MILLIMETERS
MIN
MAX
10.80
11.04
7.50
7.74
2.42
2.66
0.51
0.66
2.93
3.30
2.39 BSC
1.27
2.41
0.39
0.63
14.61
16.63
5
TYP
3.76
4.01
1.15
1.65
0.64
0.88
3.69
3.93
1.02
---

BD791

Notes

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BD791

Notes

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7

BD791

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BD791/D

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