BC807 to BC808

Vishay Semiconductors

Small Signal Transistors (PNP)

Features
PNP Silicon Epitaxial Planar Transistors for switching, AF driver and amplifier applications. Especially suited for automatic insertion in thick and thin-film circuits. These transistors are subdivided into three groups (- 16, - 25, and - 40) according to their current gain. As complementary types, the NPN transistors BC817 and BC818 are recomended.
2 1 1 B 3
18978

C 3

E 2

Mechanical Data
Case: SOT-23 Plastic case Weight: approx. 8.8 mg

Pinning: 1 = Base, 2 = Emitter, 3 = Collector Packaging Codes/Options: GS18 / 10 k per 13" reel (8 mm tape), 10 k/box GS08 / 3 k per 7" reel (8 mm tape), 15 k/box

Parts Table
Part BC807-16 BC807-25 BC807-40 BC808-16 BC808-25 BC808-40 Ordering code BC807-16-GS08 BC807-25-GS08 BC807-40-GS08 BC808-16-GS08 BC808-25-GS08 BC808-40-GS08 5A 5B 5C 5E 5F 5G Marking Remarks Tape and Reel Tape and Reel Tape and Reel Tape and Reel Tape and Reel Tape and Reel

Absolute Maximum Ratings

Tamb = 25 C, unless otherwise specified Parameter Collector - emitter voltage (Base shorted) Collector - emitter voltage (Base open) Emitter - base voltage Collector current Peak collector current Peak base current Peak emitter current Power dissipation
1)

Test condition

Part BC807 BC808 BC807 BC808

Symbol - VCES - VCES - VCEO - VCEO - VEBO - IC - ICM - IBM IEM Ptot

Value 50 30 45 25 5 800 1000 200 1000 310

1)

Unit V V V V V mA mA mA mA mW

Device on fiberglass substrate, see layout on next page.

Document Number 85134 Rev. 1.2, 03-Jan-05

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BC807 to BC808
Vishay Semiconductors Maximum Thermal Resistance
Parameter Thermal resistance junction to ambient air Thermal resistance junction to substrate backside Junction temperature Storage temperature range
1)

Test condition

Symbol RJA RSB Tj TS

Value 4501) 3201) 150 - 65 to + 150

Unit C/W C/W C C

Device on fiberglass substrate, see layout on next page.

Electrical DC Characteristics
Parameter DC current gain (current gain group - 16) DC current gain (current gain group - 25) DC current gain (current gain group - 40) DC current gain Collector saturation voltage Base saturation voltage Base - emitter voltage Test condition - VCE = 1 V, - IC = 100 mA - VCE = 1 V, - IC = 100 mA - VCE = 1 V, - IC = 100 mA - VCE = 1 V, - IC = 500 mA - IC = 500 mA, - IB = 50 mA - IC = 500 mA, - IB = 50 mA - VCE = 1 V, - IC = 500 mA BC807 BC808 - VCE = 25 V - VCE = 25 V, Tj = 150 C Emitter - base cutoff current - VEB = 4 V Part Symbol hFE hFE hFE hFE - VCEsat VBEsat - VBEon - ICES - ICES - ICES - IEBO Min 100 160 250 40 0.7 1.3 1.2 100 100 5 100 V V V nA nA A nA Typ Max 250 400 600 Unit

Collector - emitter cutoff current - VCE = 45 V

Electrical AC Characteristics
Parameter Gain - bandwidth product Collector - base capacitance Test condition - VCE = 5 V, - IC = 10 mA, f = 50 MHz - VCB = 10 V, f = 1 MHz Symbol fT CCBO Min Typ 100 12 Max Unit MHz pF

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Document Number 85134 Rev. 1.2, 03-Jan-05

BC807 to BC808
Vishay Semiconductors Layout for RJA test
Thickness: Fiberglass 1.5 mm (0.059 in.) Copper leads 0.3 mm (0.012 in.)

7.5 (0.3) 3 (0.12)

1 (0.4) 12 (0.47) 15 (0.59) 0.8 (0.03)

2 (0.8) 1 (0.4) 2 (0.8)

5 (0.2)

1.5 (0.06) 5.1 (0.2)

17451

Typical Characteristics (Tamb = 25 C unless otherwise specified)

mW 500 400 P tot 300 200 100 0
19190

mA 3 10

25 C 150 C 50 C typical limits @ Tamb = 25 C

-I C

10

10

100 T SB

200 C
19177

-1 10

1 -V BE

2V

Figure 1. Admissible Power Dissipation vs. Temperature of Substrate Backside

Figure 2. Collector Current vs. Base-Emitter Voltage

Document Number 85134 Rev. 1.2, 03-Jan-05

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BC807 to BC808
Vishay Semiconductors
100

0.5 0.2

1000

-VCE = 1V

10
rthSB R thSB

-1

0.1 0.05 0.02 0.01 0.005 =0 tp = T tp T

hFE 25 C 100 Tamb = 25 C 150 C - 50 C

10

-2

PI 10

10 -7 10 10-6
19191

-3

10-5

10-4

10 -3

tp

10-2

10-1

1s
19173

-1 10

10

-IC

10

2 10

Figure 3. Pulse Thermal Resistance vs. Pulse Duration (normalized)

MHz
3

Figure 6. DC Current Gain vs. Collector Current

10

Tamb = 25 C f = 20 MHz

V 2

fT

10

-VCE = 5 V 1V

-VBEsat 1

-IC = 10 -IB

typical limits @ Tamb = 25 C

- 50 C 25 C 150 C

10 1
19192

10
-IC

102

103 mA
19194

10-1

10

-IC

10

10 mA

Figure 4. Gain-Bandwidth Product vs. Collector Current

Figure 7. Base Saturation Voltage vs. Collector Current

V 0.5 0.4 -VCEsat 0.3 0.2

-IC = 10 -IB

typical limits @ Tamb = 25 C -IC

mA 500

3.2

2.8 2.4 2 1.8 1.6 1.4 1.2 0.8 1 0.6 0.4 -IB = 0.2 mA

400

300

200

0.1

150 C

25 C

- 50 C
2 3

100 0
19175

0
19193

10-1

10

-IC

10

10 mA

1 -VCE

2V

Figure 5. Collector Saturation Voltage vs. Collector Current

Figure 8. Common Emitter Collector Characteristics

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Document Number 85134 Rev. 1.2, 03-Jan-05

BC807 to BC808
Vishay Semiconductors
mA 100 0.35 0.3 0.25 60 40 0.2 0.15 0.1 20 -IB = 0.05 mA 0 10 -VCE 20 V
19174

mA 500

0.9

0.85

80 -I C

400 -IC 300 0.8 200 100 0.75 -VBE = 0.7 V 0 1 -VCE 2V

0
19176

Figure 9. Common Emitter Collector Characteristics

Figure 10. Common Emitter Collector Characteristics

Package Dimensions in mm (Inches)

1.15 (.045)

0.175 (.007) 0.098 (.005) 0.1 (.004) max. 0.4 (.016) 0.4 (.016) 2.6 (.102) 2.35 (.092)

0.95 (.037)
ISO Method E

3.1 (.122) 2.8 (.110) 0.4 (.016) 3

1.43 (.056) 1.20(.047)

Mounting Pad Layout

0.52 (0.020)

0.9 (0.035)

2.0 (0.079)

1 0.95 (.037)

2 0.95 (.037) 0.95 (0.037) 0.95 (0.037)

17418

Document Number 85134 Rev. 1.2, 03-Jan-05

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BC807 to BC808
Vishay Semiconductors Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.

We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423

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Document Number 85134 Rev. 1.2, 03-Jan-05

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