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ANNA UNIVERSITY-CHENNAI-25 UNIVERSITY PRACTICAL EXAMINATION APRIL 2011

COLLEGE CODE/NAME LAB CODE/NAME DEGREE/BRANCH SEM/YEAR DATE/SESSION : : : : : 607 / KING COLLEGE OF TECHNOLOGY 080290034 / DIGITAL SIGNAL PROCESSING LAB B.E / ECE V / III (ARREAR LAB) 27.04.12

QUESTION PAPER 1.(a) Write a Matlab program and execute for generation of signals (a) unit impulse (b) unit step(c) unit ramp. (b)Write an assembly language program and execute for generation of Sine wave using TMS320C5416. 2. (a) Write a Matlab program and execute for generation of signals (a) Exponential (b) sine (c) cosine. (b)Write an assembly language program and execute for generation of Square wave using TMS320C5416. 3. (a)Write a Matlab program and execute for generation of signals (a) saw tooth (b) square (c) sine. (b)Write an assembly language program and execute for generation of Triangular wave using TMS320C5416. 4. (a) Write a Matlab program and execute for performing time & frequency response of LTI system. (b) Write an assembly language program and execute for generation of sawtooth wave using TMS320C5416. 5.(a) Write a Matlab program and execute for linear and circular convolution of two sequences. (b)Write an assembly language program and execute for generation of Sine wave using TMS320C5416. 6.(a) Write a Matlab program and execute for performing (a) sampling (b) Aliasing b) Write an assembly language program and execute for generation of Square wave using TMS320C5416. 7. (a)Write a Matlab program and execute for performing FFT& IFFT. (b)Write an assembly language program and execute for generation of Sawtooth wave using TMS320C5416. 8. (a)Write a Matlab program and execute for performing FIR filter using Kaiser Window. (b) Write an assembly language program and execute for calculate the FFT of the input sequences using TMS320C5416. 9. (a)Write a Matlab program and execute for performing IIR filter using Butterworth filter. (b) Write an assembly language program and execute for performing the implementation of FIR filter using TMS320C5416

10 (a) Write an assembly language program and execute for performing the circular convolution of four sequences using TMS320C5416. b)Write a Matlab program and execute for generation of signals (a) saw tooth (b) square (c) sine 11. (a)Write an assembly language program and execute for performing the implementation of FIR filter using TMS320C5416. (b) Write a Matlab program and execute for linear and circular convolution of two sequences 12(a) Write an assembly language program and execute for implementation of IIR filter using TMS320C5416. (b) Write a Matlab program and execute for generation of signals (a) unit impulse (b) unit step(c) unit ramp 13(a) Write an assembly language program and execute for calculate the FFT of the input sequences using TMS320C5416. (b)Write a Matlab program and execute for generation of signals (a) saw tooth (b) square (c) sine. 14(a) Write an assembly language program and execute for generation of signals using TMS320C5416. (b)Write a Matlab program and execute for linear and circular convolution of two sequences

INTERNAL EXAMINER

EXTERNAL EXAMINER

ANNA UNIVERSITY-COIMBATORE UNIVERSITY PRACTICAL EXAMINATION MAY09


COLLEGE CODE/NAME LAB CODE/NAME DEGREE/BRANCH SEM/YEAR DATE/SESSION : 607/KING COLLEGE OF TECHNOLOGY : CIRCUITS AND DEVICES LAB/ 080290004 : B.TECH/IT : II/I : 9.07.09/FN&AN
QUESTION PAPER

1. Calculate the dynamic and static resistance by plotting the graph for 2. 3. 4.

5. 6. 7. 8.

9.

forward and reverse bias for the characteristics of PN junction diode. Calculate the dynamic and static resistance by plotting the graph for forward and reverse bias for the characteristics of Zener junction diode. Calculate the efficiency for the characteristics of transistor in which the current conduction is by only one type that is majority carriers. Plot the graph for i/p and o/p characteristics for the configuration in which the emitter is i.p terminal ,collector is the o/p terminal and base is the common terminal. Also find h parameter. Plot the graph for i/p and o/p characteristics for the configuration in which the base is i/p terminal ,collector is the o/p terminal and emitter is the common terminal. Also find h parameter. Verify and plot the graph for the characteristics of light sensitive semiconductor device. Verify and plot the graph for the characteristics of photo diode which is a two terminal PN junction diode. Calculate drain resistance,transconductance and amplification factor by plotting the graph for the characteristics of three terminal semiconductor device in which the current conduction is by electrons or holes and are operated only in depletion mode. Verify and plot the graph for drain and transfer characteristics of IGFET.Also calculate drain resistance and transconductace.

10.Verify and plot the graph for the characteristics of diode AC switch which is a two terminal semiconductor device. 11. Verify Kirchoffs current law to calculate the total current. 12. Verify Kirchoffs voltage law to calculate the total voltage. 13. Verify theveninslaw and calculate VTH and load current IL. 14. Verify Nortons theorem and calculate the load current IL. 15. Verify Resiprocity theorem by calculating its impedance.

INTERNAL EXAMINER

EXTERNAL EXAMINER

1.Calculate the dynamic and static resistance by plotting the graph for forward and reverse bias for the characteristics of PN junction diode. 2.Calculate the dynamic and static resistance by plotting the graph for forward and reverse bias for the characteristics of Zener diode. 3.Calculate the efficiency for the characteristics of transistor in which the current conduction is by only one type that is majority carriers. 4.Plot the graph for i/p and o/p characteristics for the configuration in which the emitter is i/p terminal ,collector is the o/p terminal and base is the common terminal. Also find h parameter. 5.Plot the graph for i/p and o/p characteristics for the configuration in which the base is i/p terminal ,collector is the o/p terminal and emitter is the common terminal. Also find h parameter. 6.Verify and plot the graph for the characteristics of light sensitive semiconductor device. 7.Verify and plot the graph for the characteristics of photo diode which is a two terminal PN junction diode. 8.Calculate drain resistance, transconductance and amplification factor by plotting the graph for the characteristics of three terminal semiconductor device in which the current conduction is by electrons or holes and are operated only in depletion mode. 9.Verify and plot the graph for drain and transfer characteristics of IGFET.Also calculate drain resistance and transconductace.

10.Verify and plot the graph for the characteristics of diode AC switch which is a two terminal semiconductor device. 11.Verify Kirchoffs current law to calculate the total current. 12.Verify Kirchoffs voltage law to calculate the total voltage. 13.Verify thevenins law and calculate VTH and load current IL. 14Verify Nortons theorem and calculate the load current IL. 15.Verify Resiprocity theorem by calculating its impedance. 16.Calculate the dynamic and static resistance by plotting the graph for forward and reverse bias for the characteristics of Zener diode. 17.Calculate the dynamic and static resistance by plotting the graph for forward and reverse bias for the characteristics of PN junction diode. 18.Verify and plot the graph for the characteristics of light sensitive semiconductor device. 19.Verify and plot the graph for the characteristics of photo diode which is a two terminal PN junction diode. 20.Verify Kirchoffs current law to calculate the total current. 21.Verify Kirchoffs voltage law to calculate the total voltage. 22.Calculate the efficiency for the characteristics of transistor in which the current conduction is by only one type that is majority carriers.

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