MEC 4133

INTERNATIONAL ISLAMIC UNIVERSITY MALAYSIA

KULLIYYAH OF ENGINEERING

END OF SEMESTER EXAMINATION

SEMESTER I, 2007/2008 SESSION

Programme Time Duration

: MANUFACTURING ENGINEERING Level of Study : UG 4 : 2:30 p.m 5:30 p.m : 3 Hrs Section(s) : 1 Date : 29/10/07

Course Code : MEC 4133 Course Title

: MICRO-MANUFACURING TECHNOLOGY

This Question Paper Consists of EIGHT (8) Printed Pages (Including Cover Page) With SIX (6) Questions and one Appendix INSTRUCTION(S) TO CANDIDATES

DO NOT OPEN UNTIL YOU ARE ASKED TO DO SO

There are 6 (SIX) questions Answer any 5 (FIVE) questions. Formulae and Tables provided in Appendix 1 may be useful. Answers should be clear and intelligible. Justify your answer with simplification of intermediate steps for full marks. No book, notes and programmable calculator are permitted For specific instructions, please refer to appropriate sections. Total MARKS for this paper is 100. Weightage: 40%.

Any form of cheating or attempt to cheat is a serious offence which may lead to dismissal
1

MEC 4133

Q1 [20 Marks] A 300 m long ceramic microtube was fabricated by LIGA process for microfludic analysis of biological specimen. The internal and external diameters of the tube are 30 m and 50 m respectively. (a) With neat sketches describe the LIGA fabrication processes for the above microtube. Also estimate the resulting accuracy and surface finish of the microtube. (13 marks) List and briefly explain the main issues when fabricating the above microtube by LIGA process. (4 marks) Calculate the aspect ratio of the microtube and state the assumption(s) that you made. (3 marks)

(b)

(c)

Q2 [20 Marks] (a) What is synchrotron x-ray? Explain how it provides higher brilliance compared to other x-rays. (6 marks) Briefly explain LIGA-Similar process with at least three examples. (5 marks) Briefly explain why LIGA-Similar processes have been among the main goals for many researchers worldwide. (3 marks) List and briefly explain at least three reasons why the conventional injection molding simulation software is not directly applicable for simulation of microinjection molding. (6 marks)

(b)

(c)

(d)

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Q3 [20 Marks] (a) Define surface silicon micromachining. In a sequence, list all the processes that are involved in surface silicon micromachining. (5 marks) List at least three pairs of material systems of sacrificial layer technology of surface micromachining. Identify a pair that is most widely used and explain why. (5 marks) With neat sketches of surface silicon micromachining explain the fabrication of a poly-silicon cantilever beam anchored directly to a silicon substrate. (10 marks)

(b)

(c)

Q4 [20 Marks] (a) With neat sketches explain the doping of Germanium (Ge) with Arsenic (As). Is it n-type or p-type doping? Justify your answer. (6 marks) A silicon substrate is subjected to diffusion of boron dopant at 10000C and 8000C with a dose of 1.2x1011 cm-2. The substrate is initially free of impurity. (i) Calculate the concentrations of the dopant at 0.10 m beneath the surface after 1.25 hours into the diffusion processes at both temperatures? (10 marks) (ii) Compare the two values of the dopant concentrations calculated in (i) and comment based on the comparison. (4 marks)

(b)

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Q5 [20 Marks] (a) Define cleanroom for microfabrication. With at least two examples compare the Federal and ISO specification of cleanroom. (6 marks) With neat sketches explain the Czochralski (CZ) method to produce electronic grade silicon boule (ingot). Also specify the usual pulling rate, length and diameter of the boule. (8 marks) List the advantages of surface mount technology (SMT) over pinin-hole (PIH) technology for printed circuit board (PCB) assembly. (6 marks)

(b)

(c)

Q6 [20 Marks] (a) A CVD process is used to deposit SiO2 film on a silicon substrate. The process involves a reactant SiH4 being diluted to 2% in the carrier O2 gas at 4900C. The CVD process is carried out in a horizontal tubular reactor of 200 mm diameter as shown in Figure 1. The following information is provided (assume any missing data): Pressure variation is negligible. The velocity of the gas flow is 50 mm/s. The dynamic viscosity of the gas is 400 P. At room temperature the molar volume of gas is 22.4 x 10-3/mol. The atomic radius of silicon is 0.117 nm. The atomic radius of oxygen is 0.06 nm. Determine the following: (i) (ii) The density of the carrier gas (2 marks) The Reynolds number of the gas flow (2 marks) Question No. 6 continues on page 5 4

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(iii) The thickness of the boundary layer over the substrate (2 marks) (iv) The diffusivity of the carrier gas and reactant in the silicon substrate (4 marks) (v) The surface reaction rate (3 marks) (2 marks) (b) Explain how to estimate the thickness of SiO2 layer on a silicon wafer by observing the colour of the layer. (5 marks)

(vi) The deposition rate

Figure 1

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Appendix 1: Formulae and Tables

(Symbols and Notations indicate their usual meaning)

Formulae: The following equations are expressed with the usual meaning
of notations.

1 x R 2 Qi p exp N i ( x) = R 2 2 R p p
N ( x ) x

(x,t) 2N (x,t) = D t x2
x erfc 2 Dt

N (x,t) = N

erfc ( x) = 1 erfc (x ) = 1

e
0

y2

dy

ln ( D ) = aT ' + b

x=

B (t + ) A

x = B (t + )
d =
2 0

+ 2 Dd ks 2 DN
0

MEC 4133

(Symbols and Notations indicate their usual meaning)

Appendix 1: Formulae and Tables (Contd.)

Selected Tables:
Table 1. Ionization energy for dopants in silicon. Dopants Phosphorous (P) Arsenic (As) Antimony (Sb) Boron (B) Aluminium (Al) Gallium (Ga) Indium (In) Type n n n p p p p Ionization energy, (eV) 0.044 0.049 0.039 0.045 0.057 0.065 0.160

Table 2. Ion implantation of common dopants in silicon. Ion Boron (B) Phosphorous (P) Arsenic (As) Range Rp, (nm) Straggle Rp, (nm) 39.0 19.5 9.0 69.0 53.5 26.1

At 30 keV energy level 106.5 42.0 23.3 At 100 keV energy level Boron (B) 307.0 Phosphorous (P) 135.0 Arsenic (As) 67.8

Table 3. Constant a and b for diffusion equation. Dopants Boron Arsenic Phosphorous (Ns = 1021 cm-3) Phosphorous (Ns = 1019 cm-3) Constant a -19.9820 -26.8404 -15.8456 -20.4278 Constant b 13.1109 17.2250 11.1168 13.6430

Table 4. Coefficient for determining the rates of oxidation in silicon. Constants Linear rate constant Parabolic rate constant Coefficient a -10.4422 -10.1257 -9.9055 -9.9265 -14.4027 -10.6150 Coefficient b 6.96426 6.93576 7.82039 7.94858 6.74356 7.10400 Conditions Dry O2, Eg = 2 eV, (100) silicon Dry O2, Eg = 2 eV, (111) silicon H2O vapour, Eg = 2.05 eV, (110) silicon H2O vapour, Eg = 2.05 eV, (111) silicon Dry O2, Eg = 1.24 eV, 760 torr vacuum H2O vapour, Eg = 0.71 eV, 760 torr vacuum

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(Symbols and Notations indicate their usual meaning) Table 5. Complementary Error function.

Appendix 1: Formulae and Tables (Contd.)

End of Paper 8