1

HY15N120R3
H-series
Rev. 2.1 2009-11-25
Reverse conducting GBT with monolithic body diode
Features:
Powerful monolithic body diode with low forward voltage
designed for soft commutation only
TrenchStop

technology offering:
- very tight parameter distribution
- high ruggedness, temperature stable behavior
- low VCEsat
- easy parallel switching capability due to positive
temperature coefficient in VCEsat
Low EM
New TO-247HC package offers increased air & creepage
distances compared to TO247 package
Qualified according to JEDEC J-STD-020 and JESD-022 for
target applications
Pb-free lead plating; RoHS compliant
Halogen free (according to EC 61249-2-21)
Complete product spectrum and PSpice Models:
http://www.infineon.com/igbt/
Applications:
nductive cooking
G
C
E
Type Type Type Type V VV Vj j j j V VV Vj,,,, j,,,, j,,,, j,,,, T TT T,=25C ,=25C ,=25C ,=25C T TT T,,,, ,,,, ,,,, ,,,, Marking Marking Marking Marking Package Package Package Package
HY15N120R3 1200V 15A 1.48V 175C H15R1203 PG-TO247HC-3
Maximum ratings
Parameter SymboI VaIue Unit
Collector-emitter voltage Vj 1200 V
DC collector current, limited by T,,,,
T = 25C
T = 100C
30.0
15.0
A
Pulsed collector current, t limited by T,,,, ,., 45.0 A
Turn off safe operating area Vj ~ 1200V, T, ~ 175C - 45.0 A
Diode forward current, limited by T,,,,
T = 25C
T = 100C
= 30.0
15.0
A
Diode pulsed current, t limited by T,,,, =,., 45.0 A
Gate-emitter voltage
Transient Gate-emitter voltage (t = 10s, D < 0.010)
Vj
20
25
V
Power dissipation T = 25C
Power dissipation T = 100C
P,,,
254.0
127.0
W
Operating junction temperature T, -40...+175 C
Storage temperature T,, -55...+175 C
Soldering temperature,
for 10 s (according to JEDEC J-STA-020A) 260
C
Mounting torque, M3 screw
Maximum of mounting processes: 3
M 0.6 Nm
2
HY15N120R3
H-series
Rev. 2.1 2009-11-25
ThermaI Resistance
Parameter SymboI Conditions Max. VaIue Unit
Characteristic
GBT thermal resistance,
junction - case
R,-;-, 0.59 K/W
Diode thermal resistance,
junction - case
R,-;-, 0.59 K/W
Thermal resistance
junction - ambient
R,-;-, 55 K/W
Electrical Characteristic, at Electrical Characteristic, at Electrical Characteristic, at Electrical Characteristic, at T TT T, = 25C, unless otherwise specified , = 25C, unless otherwise specified , = 25C, unless otherwise specified , = 25C, unless otherwise specified
VaIue
min. typ. max.
Parameter SymboI Conditions Unit
Static Characteristic
Collector-emitter breakdown voltage V;pjz Vj = 0V, = 0.50mA 1200 - - V
Collector-emitter saturation voltage Vj,,,
Vj = 15.0V, = 15.0A
T, = 25C
T, = 125C
T, = 175C
-
-
-
1.48
1.70
1.80
1.70
-
-
V
Diode forward voltage V=
Vj = 0V, = = 15.0A
T, = 25C
T, = 125C
T, = 175C
-
-
-
1.55
1.70
1.80
1.75
-
V
Gate-emitter threshold voltage Vj;,- = 0.40mA, Vj = Vj 5.1 5.8 6.4 V
Zero gate voltage collector current jz
Vj = 1200V, Vj = 0V
T, = 25C
T, = 175C
-
-
-
-
100.0
2500.0
A
Gate-emitter leakage current jz Vj = 0V, Vj = 20V - - 100 nA
Transconductance g, Vj = 20V, = 15.0A - 13.9 - S
ntegrated gate resistor r none D
Electrical Characteristic, at Electrical Characteristic, at Electrical Characteristic, at Electrical Characteristic, at T TT T, = 25C, unless otherwise specified , = 25C, unless otherwise specified , = 25C, unless otherwise specified , = 25C, unless otherwise specified
VaIue
min. typ. max.
Parameter SymboI Conditions Unit
Dynamic Characteristic
nput capacitance C,,, - 1165 -
Output capacitance C,,, - 40 -
Reverse transfer capacitance C,,, - 32 -
Vj = 25V, Vj = 0V, f = 1MHz pF
Gate charge Q
V = 960V, = 15.0A,
Vj = 15V
- 165.0 - nC
3
HY15N120R3
H-series
Rev. 2.1 2009-11-25
Switching Characteristic, nductive Load, at Switching Characteristic, nductive Load, at Switching Characteristic, nductive Load, at Switching Characteristic, nductive Load, at T TT T, = 25C , = 25C , = 25C , = 25C
VaIue
min. typ. max.
Parameter SymboI Conditions Unit
IGBT Characteristic
Turn-off delay time t;, - 300 - ns
Fall time t - 46 - ns
Turn-off energy E, - 0.70 - mJ
T, = 25C,
V = 600V, = 15.0A,
Vj = 0.0/15.0V,
r = 14.6D, L, = 180nH,
C, = 39pF
L,, C, from Fig. E
Energy losses include "tail and
diode reverse recovery.
Switching Characteristic, nductive Load, at Switching Characteristic, nductive Load, at Switching Characteristic, nductive Load, at Switching Characteristic, nductive Load, at T TT T, = 175C , = 175C , = 175C , = 175C
VaIue
min. typ. max.
Parameter SymboI Conditions Unit
IGBT Characteristic
Turn-off delay time t;, - 370 - ns
Fall time t - 90 - ns
Turn-off energy E, - 1.25 - mJ
T, = 175C,
V = 600V, = 15.0A,
Vj = 0.0/15.0V,
r = 14.6D, L, = 180nH,
C, = 39pF
L,, C, from Fig. E
Energy losses include "tail and
diode reverse recovery.
4
HY15N120R3
H-series
Rev. 2.1 2009-11-25
Figure 1. Figure 1. Figure 1. Figure 1. Collector current as a function of switching Collector current as a function of switching Collector current as a function of switching Collector current as a function of switching
frequency frequency frequency frequency
(T~175C, D=0.5, Vj=600V, Vj=15/0V,
R=14,6D)
f, SWTCHNG FREQUENCY [kHz]

,

C
O
L
L
E
C
T
O
R

C
U
R
R
E
N
T

[
A
]
1 10 100 1000
0
10
20
30
40
50
T=80
T=110
Figure 2. Figure 2. Figure 2. Figure 2. Forward bias safe operating area Forward bias safe operating area Forward bias safe operating area Forward bias safe operating area
(D=0, T=25C, T~175C; Vj=15V)
Vj, COLLECTOR-EMTTER VOLTAGE [V]

,

C
O
L
L
E
C
T
O
R

C
U
R
R
E
N
T

[
A
]
1 10 100 1000
0.1
1
10
100
t=1s
20s
50s
200s
1ms
10ms
DC
Figure 3. Figure 3. Figure 3. Figure 3. Power dissipation as a function of case Power dissipation as a function of case Power dissipation as a function of case Power dissipation as a function of case
temperature temperature temperature temperature
(T~175C)
T, CASE TEMPERATURE [C]
P
,
,
,
,

P
O
W
E
R

D

S
S

P
A
T

O
N

[
W
]
25 50 75 100 125 150 175
0
50
100
150
200
250
300
Figure 4. Figure 4. Figure 4. Figure 4. Collector current as a function of case Collector current as a function of case Collector current as a function of case Collector current as a function of case
temperature temperature temperature temperature
(Vj<15V, T~175C)
T, CASE TEMPERATURE [C]

,

C
O
L
L
E
C
T
O
R

C
U
R
R
E
N
T

[
A
]
25 50 75 100 125 150 175
0
10
20
30
40
5
HY15N120R3
H-series
Rev. 2.1 2009-11-25
Figure 5. Figure 5. Figure 5. Figure 5. Typical output characteristic Typical output characteristic Typical output characteristic Typical output characteristic
(T=25C)
Vj, COLLECTOR-EMTTER VOLTAGE [V]

,

C
O
L
L
E
C
T
O
R

C
U
R
R
E
N
T

[
A
]
0 1 2 3
0
15
30
45
Vj=20V
17V
15V
13V
11V
9V
7V
5V
Figure 6. Figure 6. Figure 6. Figure 6. Typical output characteristic Typical output characteristic Typical output characteristic Typical output characteristic
(T=175C)
Vj, COLLECTOR-EMTTER VOLTAGE [V]

,

C
O
L
L
E
C
T
O
R

C
U
R
R
E
N
T

[
A
]
0 1 2 3 4
0
15
30
45
Vj=20V
17V
15V
13V
11V
9V
7V
5V
Figure 7. Figure 7. Figure 7. Figure 7. Typical transfer characteristic Typical transfer characteristic Typical transfer characteristic Typical transfer characteristic
(Vj=20V)
Vj, GATE-EMTTER VOLTAGE [V]

,

C
O
L
L
E
C
T
O
R

C
U
R
R
E
N
T

[
A
]
2 4 6 8 10 12
0
15
30
45
T=25C
T=175C
Figure 8. Figure 8. Figure 8. Figure 8. Typical collector-emitter saturation voltage Typical collector-emitter saturation voltage Typical collector-emitter saturation voltage Typical collector-emitter saturation voltage
as a function of junction temperature as a function of junction temperature as a function of junction temperature as a function of junction temperature
(Vj=15V)
T, JUNCTON TEMPERATURE [C]
V

j
;
,
,
,

,

C
O
L
L
E
C
T
O
R
-
E
M

T
T
E
R

S
A
T
U
R
A
T

O
N

[
A
]
0 25 50 75 100 125 150 175
1.0
1.5
2.0
2.5
3.0
=7.5A
=15A
=30A
6
HY15N120R3
H-series
Rev. 2.1 2009-11-25
Figure 9. Figure 9. Figure 9. Figure 9. Typical switching times as a function of Typical switching times as a function of Typical switching times as a function of Typical switching times as a function of
collector current collector current collector current collector current
(ind. load, T=175C, Vj=600V,
Vj=15/0V, R=14,6D, test circuit in Fig.
E)
, COLLECTOR CURRENT [A]
t
,

S
W

T
C
H

N
G

T

M
E
S

[
n
s
]
0 5 10 15 20 25 30
10
100
1000
t;,
t
Figure 10. Figure 10. Figure 10. Figure 10. Typical switching times as a function of Typical switching times as a function of Typical switching times as a function of Typical switching times as a function of
gate resistor gate resistor gate resistor gate resistor
(ind. load, T=175C, Vj=600V,
Vj=15/0V, =15A, test circuit in Fig. E)
R, GATE RESSTOR [D]
t
,

S
W

T
C
H

N
G

T

M
E
S

[
n
s
]
10 20 30 40 50
10
100
1000
t;,
t
Figure 11. Figure 11. Figure 11. Figure 11. Typical switching times as a function of Typical switching times as a function of Typical switching times as a function of Typical switching times as a function of
junction temperature junction temperature junction temperature junction temperature
(ind. load, Vj=600V, Vj=15/0V,
=15A, R=14,6D, test circuit in Fig. E)
T, JUNCTON TEMPERATURE [C]
t
,

S
W

T
C
H

N
G

T

M
E
S

[
n
s
]
25 50 75 100 125 150 175
10
100
1000
t;,
t
Figure 12. Figure 12. Figure 12. Figure 12. Gate-emitter threshold voltage as a Gate-emitter threshold voltage as a Gate-emitter threshold voltage as a Gate-emitter threshold voltage as a
function of junction temperature function of junction temperature function of junction temperature function of junction temperature
(=0.4mA)
T, JUNCTON TEMPERATURE [C]
V

j
;
,
-

,

G
A
T
E
-
E
M

T
T
E
R

T
H
R
E
S
H
O
L
D

V
O
L
T
A
G
E

[
V
]
0 25 50 75 100 125 150 175
2
3
4
5
6
7
min.
typ.
max.
7
HY15N120R3
H-series
Rev. 2.1 2009-11-25
Figure 13. Figure 13. Figure 13. Figure 13. Typical switching energy losses as a Typical switching energy losses as a Typical switching energy losses as a Typical switching energy losses as a
function of collector current function of collector current function of collector current function of collector current
(ind. load, T=175C, Vj=600V,
Vj=15/0V, R=14,6D, test circuit in Fig.
E)
, COLLECTOR CURRENT [A]
E
,

S
W

T
C
H

N
G

E
N
E
R
G
Y

L
O
S
S
E
S

[
m
J
]
0 5 10 15 20 25 30
0.0
0.5
1.0
1.5
2.0
2.5
E,
Figure 14. Figure 14. Figure 14. Figure 14. Typical switching energy losses as a Typical switching energy losses as a Typical switching energy losses as a Typical switching energy losses as a
function of gate resistor function of gate resistor function of gate resistor function of gate resistor
(ind. load, T=175C, Vj=600V,
Vj=15/0V, =15A, test circuit in Fig. E)
R, GATE RESSTOR [D]
E
,

S
W

T
C
H

N
G

E
N
E
R
G
Y

L
O
S
S
E
S

[
m
J
]
10 20 30 40 50
1.0
1.1
1.2
1.3
1.4
1.5
1.6
E,
Figure 15. Figure 15. Figure 15. Figure 15. Typical switching energy losses as a Typical switching energy losses as a Typical switching energy losses as a Typical switching energy losses as a
function of junction temperature function of junction temperature function of junction temperature function of junction temperature
(ind load, Vj=600V, Vj=15/0V, =15A,
R=14,6D, test circuit in Fig. E)
T, JUNCTON TEMPERATURE [C]
E
,

S
W

T
C
H

N
G

E
N
E
R
G
Y

L
O
S
S
E
S

[
m
J
]
25 50 75 100 125 150 175
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
E,
Figure 16. Figure 16. Figure 16. Figure 16. Typical switching energy losses as a Typical switching energy losses as a Typical switching energy losses as a Typical switching energy losses as a
function of collector emitter voltage function of collector emitter voltage function of collector emitter voltage function of collector emitter voltage
(ind. load, T=175C, Vj=15/0V, =15A,
R=14,6D, test circuit in Fig. E)
Vj, COLLECTOR-EMTTER VOLTAGE [V]
E
,

S
W

T
C
H

N
G

E
N
E
R
G
Y

L
O
S
S
E
S

[
m
J
]
400 500 600 700 800 900 1000
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
E,
8
HY15N120R3
H-series
Rev. 2.1 2009-11-25
Figure 17. Figure 17. Figure 17. Figure 17. Typical turn off switching energy loss for Typical turn off switching energy loss for Typical turn off switching energy loss for Typical turn off switching energy loss for
soft switching soft switching soft switching soft switching
(ind load, Vj=600V, Vj=15/0V, =15A,
R=14,6D, test circuit in Fig. E)
dv/dt, VOLTAGE SLOPE [V/s]
E
,

S
W

T
C
H

N
G

E
N
E
R
G
Y

L
O
S
S
E
S

[
m
J
]
100 1000 1E+4
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
T=25C
T=175C
Figure 18. Figure 18. Figure 18. Figure 18. Typical gate charge Typical gate charge Typical gate charge Typical gate charge
(=15A)
Qj, GATE CHARGE [nC]
V

j
,

G
A
T
E
-
E
M

T
T
E
R

V
O
L
T
A
G
E

[
V
]
0 25 50 75 100 125 150 175
0
2
4
6
8
10
12
14
16
240V
960V
Figure 19. Figure 19. Figure 19. Figure 19. Typical capacitance as a function of Typical capacitance as a function of Typical capacitance as a function of Typical capacitance as a function of
collector-emitter voltage collector-emitter voltage collector-emitter voltage collector-emitter voltage
(Vj=0V, f=1MHz)
Vj, COLLECTOR-EMTTER VOLTAGE [V]
C
,

C
A
P
A
C

T
A
N
C
E

[
p
F
]
0 10 20 30
10
100
1000
C,,,
C,,,
C,,,
Figure 20. Figure 20. Figure 20. Figure 20. GBT transient thermal impedance GBT transient thermal impedance GBT transient thermal impedance GBT transient thermal impedance
(D=t/T)
t, PULSE WDTH [s]
Z
,
-
)

,

T
R
A
N
S

E
N
T

T
H
E
R
M
A
L

M
P
E
D
A
N
C
E

[
K
/
W
]
1E-6 1E-5 1E-4 0.001 0.01 0.1 1
0.001
0.01
0.1
1
D=0.5
0.2
0.1
0.05
0.02
0.01
single pulse
i:
r,[K/W]:
,[s]:
1
4.6E-3
2.4E-5
2
0.1431
3.3E-4
3
0.2097
3.1E-3
4
0.2185
0.01636424
5
0.01204762
0.1753518
6
1.9E-3
1.713276
7
2.1E-4
4.662402

9
HY15N120R3
H-series
Rev. 2.1 2009-11-25
Figure 21. Figure 21. Figure 21. Figure 21. Diode transient thermal impedance as a Diode transient thermal impedance as a Diode transient thermal impedance as a Diode transient thermal impedance as a
function of pulse width function of pulse width function of pulse width function of pulse width
(D=t/T)
t, PULSE WDTH [s]
Z
,
-
)

,

T
R
A
N
S

E
N
T

T
H
E
R
M
A
L

M
P
E
D
A
N
C
E

[
K
/
W
]
1E-6 1E-5 1E-4 0.001 0.01 0.1 1
0.001
0.01
0.1
1
D=0.5
0.2
0.1
0.05
0.02
0.01
single pulse
i:
r,[K/W]:
,[s]:
1
4.6E-3
2.4E-5
2
0.1431
3.3E-4
3
0.2097
3.1E-3
4
0.2185
0.01636424
5
0.012
0.1753518
6
1.9E-3
1.713276
7
2.1E-4
4.662402

Figure 22. Figure 22. Figure 22. Figure 22. Typical diode forward current as a Typical diode forward current as a Typical diode forward current as a Typical diode forward current as a
function of forward voltage function of forward voltage function of forward voltage function of forward voltage
V=, FORWARD VOLTAGE [V]

=
,

F
O
R
W
A
R
D

C
U
R
R
E
N
T

[
A
]
0 1 2 3
0
15
30
45
T=25C
T=175C
Figure 23. Figure 23. Figure 23. Figure 23. Typical diode forward voltage as a Typical diode forward voltage as a Typical diode forward voltage as a Typical diode forward voltage as a
function of junction temperature function of junction temperature function of junction temperature function of junction temperature
T, JUNCTON TEMPERATURE [C]
V
=
,

F
O
R
W
A
R
D

V
O
L
T
A
G
E

[
V
]
0 25 50 75 100 125 150 175
1.0
1.5
2.0
2.5
=7.5A
=15A
=30A
10
HY15N120R3
H-series
Rev. 2.1 2009-11-25
PG-TO247HC-3 (PG-TOHC-3)
11
HY15N120R3
H-series
Rev. 2.1 2009-11-25
12
HY15N120R3
H-series
Rev. 2.1 2009-11-25
PubIished by
Infineon TechnoIogies AG
81726 Munich, Germany
81726 Mnchen, Germany
2009 Infineon TechnoIogies AG
AII Rights Reserved.
LegaI DiscIaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With
respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the
application of the device, nfineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including
without limitation, warranties of non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest nfineon
Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in question,
please contact the nearest nfineon Technologies Office. nfineon Technologies components may be used in life-support
devices or systems only with the express written approval of nfineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of
that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or
maintain and sustain and/or protect human life. f they fail, it is reasonable to assume that the health of the user or other
persons may be endangered.