Reduction of the Schottky barrier height on

silicon carbide using Au nano-particles

S.-K. Lee
a,
*
, C.-M. Zetterling
a
, M.

OOstling
a
, I.

AAberg
b
, M.H. Magnusson
b
,
K. Deppert
b
, L.-E. Wernersson
b
, L. Samuelson
b
, A. Litwin
c
a
Department of Microelectronics and Information Technology, KTH, Royal Institute of Technology, Electrum 229, S-164 40,
Kista-Stockholm, Sweden
b
Solid State Physics, Lund University, Box 118, S-22100, Lund, Sweden
c
Ericsson Microelectronics AB, S-164 81, Kista Sweden
Received 17 December 2001; received in revised form 22 January 2002; accepted 12 February 2002
Abstract
By the incorporation of size-selected Au nano-particles in Ti Schottky contacts on silicon carbide, we could observe
considerably lower the barrier height of the contacts. This result could be obtained for both n- and p-type Schottky
contacts using currentvoltage and capacitancevoltage measurements. For n-type Schottky contacts, we observed
reductions of 0.190.25 eV on 4H-SiC and 0.150.17 eV on 6H-SiC as compared with particle-free Ti Schottky contacts.
For p-type SiC, the reduction was a little lower with 0.020.05 eV on 4H and 0.100.13 eV on 6H-SiC. The reduction
of the Schottky barrier height is explained using a model with enhanced electric eld at the interface due to the small
size of the circular patch and the large dierence of the barrier height between Ti and Au. 2002 Elsevier Science Ltd.
All rights reserved.
Keywords: Nano-particles; Schottky barrier height; Silicon carbide; Image force lowering
1. Introduction
Silicon carbide is a promising wide band gap semi-
conductor material for high temperature, high power,
and high frequency device applications [1]. Due to the
higher breakdown electric eld and wide band gap, me-
talsemiconductor (MS) devices on SiC such as Schottky
diodes have the potential to become an important al-
ternative to Si-base switching devices for both high
power and high frequency [2]. However, in a Schottky
barrier rectier, the minimum on-state voltage drop is
determined by the barrier height of the MS junction.
Schottky barrier heights (SBHs) are of importance for
applications that require diodes with lowon-state voltage
drop and fast switching speed. Many authors have re-
ported a survey of the barrier height for various metals
and published on the eld of Schottky diodes on 3C-, 6H-,
and 4H-SiC [3,4]. Itoh et al. [5] and Lee et al. [6] proved
that the barrier height strongly depends on the metal
work function with evidence of strong Fermi-level un-
pinning, and with a linear relationship. Schoen et al. [7]
investigated a dual-metal-trench (DMT) Schottky pinch-
rectier in 4H-SiC using a small/large barrier height (Ti/
Ni) metals. They found that a low barrier region (Ti) is
not pinched-o or is not electrically shielded by a high
barrier region (Ni) in forward bias. In reverse bias, the Ti
region becomes fully pinched-o and the Ni regions
electrically shields the Ti Schottky contacts, and the high
electric eld is restricted to the large barrier height Ni
Schottky contacts. They also veried these behaviors
using a MEDICI simulation [8].
In this paper, we demonstrate a new approach for the
manufacturing of Schottky contacts to SiC with lower
Solid-State Electronics 46 (2002) 14331440
www.elsevier.com/locate/sse
*
Corresponding author. Tel.: +46-8-752-1300; fax: +46-8-
752-7850.
E-mail address: lee@ele.kth.se (S.-K. Lee).
0038-1101/02/$ - see front matter 2002 Elsevier Science Ltd. All rights reserved.
PII: S0038- 1101( 02) 00122- 3
barrier heights based on a previous study of elec-
tron transport at the Au/InP interface [9]. The ap-
proach focuses on the incorporation of size-selected Au
nano-particles in Ti contacts to dierent types of SiC
material.
2. Experimental details
Four sets of 4 lm thick lightly doped (47 10
15
cm
3
) epilayers (n- and p-type) on both n- and p-type
4H-SiC and 6H-SiC(0 0 0 1) substrates ($10
18
cm
3
)
were purchased from CREE research Inc. [10]. The
wafers were cleaned sequentially with mixtures of
H
2
SO
4
:H
2
O
2
(2.5:1) and H
2
O:CH
3
CH(OH)CH
3
:HF
(100:3:1). A sacricial oxidation was performed at 1250
C to form 530

AA SiO
2
. The cleaning was completed by a
dip in 5% diluted HF solution to remove oxide and a
deionized water rinse. The Schottky contacts were
formed by rst depositing Au aerosol nano-particles (see
Fig. 1) with a diameter of 20 nm and with a density of 90
lm
2
on the SiC surface [11]. Blanket pieces were also
deposited simultaneously for measuring the exact den-
sity of the Au nano-particles on SiO
2
/Si using scanning
electron microscopy (SEM). The aerosol generator set
up is described in detail elsewhere [11]. After deposition
of the Au aerosol, the samples were loaded into the
evaporation chamber to deposit additional Ti (200 nm)
on Au nano-particles. The reason for selecting Au and
Ti for our study as Schottky metals is that they have a
large barrier height dierence, for example, the dier-
ence of the SBH between Au and Ti is 0.63 eV (n-4H)
and 0.59 eV (p-4H), 0.64 (n-6H), and 0.49 (p-6H), re-
spectively [5,6]. Control samples consisting of Au and Ti
were also fabricated for comparison. The thickness
(200 nm) of both Au and Ti metals was similar to that of
the Ti Schottky contacts with embedded Au nano-par-
ticles. Fig. 2 shows a schematic view of the Ti Schottky
contacts with embedded Au nano-particles on SiC. The
Schottky diodes (501000 lm diameter) were patterned
using a standard photo-lithography process and wet-
etched using etchants of H
2
O:HF 5% (2:1) and KI:I
2
:
H
2
O (4:1:10) for Ti and Au, respectively. Then large area
Al backside ohmic contacts (250 nm thick) were evap-
orated onto the backside of the SiC with a photo-resist
mask in order to prevent the contamination of the front
side metals. Diodes were nally annealed with a 10% H
2
/
Ar ambient at 350550 C for 60 s using rapid ther-
mal annealing (RTA). Currentvoltage (IV) as well as
capacitancevoltage (CV) measurements were per-
formed on dierent diodes for dierent temperatures up
to 300 C using a Hewlett Packard (HP) 4156A semi-
conductor parameter analyzer in the range of 20 fA100
mA and a HP 4284A inductance capacitance resistance
(LCR) meter with a frequency of 100 kHz, respectively.
The SBHs were extracted from both IV and CV mea-
surements for comparison at dierent temperature ran-
ges.
3. Results and discussion
According to the thermionic-emission theory [12,13],
the current density (J)forward voltage (V) characteris-
tic is given by
J J
S
exp
qV
gkT
_ _ _
1
_
;
J
S
A

T
2
exp
_

q
kT
/
B
D/
_
1
where J
S
is the saturation current density, g is the ide-
ality factor, A

is eective Richardsons constant (for

Fig. 1. SEM view of embedded Au nano-particles deposited by
aerosol method on silicon. The diameter of Au nano-particles
and the density is 20 nm and 90 lm
2
.
Fig. 2. Schematic view of Ti Schottky contacts with embedded
Au nano-particles on SiC. The thickness of the epilayers is 4
lm.
1434 S.-K. Lee et al. / Solid-State Electronics 46 (2002) 14331440
4H-SiC 146 Acm
2
K
2
) [14], /
B
is the barrier height,
and D/ is the image force lowering. From Eq. (1) we
obtain the barrier height (/
B
) and ideality factor (g)
/
B

kT
q
ln
A

T
2
J
S
_ _
; g
q
kT
oV
o ln J
_ _
2
From the IV measurements, the ideality factor, the
saturation current density, and the barrier height can be
extracted in a plot of ln J versus forward voltage V. Fig.
3 shows the IV characteristics of 350 C annealed
control Ti Schottky contact and Ti Schottky contacts
with embedded Au nano-particles to n-type 6H- and 4H-
SiC with measurement temperature from 25 up to 300
C. The barrier heights from CV measurements were
extracted for comparison with the IV measurements.
The barrier height and the doping concentration (N
D
or
N
A
) of the epilayers can be determined from the voltage
intercept and slope in plotting 1=C
2
versus the reverse
voltage, respectively using the following equations [13]:
/
B
V
I

kT
q
ln
N
D;A
N
C
_ _

kT
q
D/ 3
N
D;A

2
qe
S

d 1=C
2

dV
_ _
A
2
4
where N
C
is the conduction band density of states for
SiC (1:66 10
19
cm
3
for 4H-SiC) [15], V
I
is the voltage
intercept, and A is the area of the diode (in this work
1:26 10
3
cm
2
). The 1=C
2
versus reverse voltage for
control Ti Schottky and Ti Schottky contacts with em-
bedded Au nano-particles to p-type 6H- and 4H-SiC at
the frequency of 100 kHz at 25 C is shown in Fig. 4.
From the CV measurements, the average doping con-
centration of the epilayers for n-4H-SiC, n-6H-SiC, p-
4H-SiC, and p-6H-SiC was determined to be 2:4 10
15
,
1:0 10
16
, 6:8 10
15
, and 4:2 10
15
cm
3
, respectively.
The SBH, ideality factor, and doping concentration of
the epilayers of control Ti Schottky contact and Ti
Schottky contacts with embedded Au nano-particles to
n- and p-type 4H- and 6H-SiC as a function of the
measurement temperature using the IV and CV mea-
surements are summarized in Tables 1 and 2, respectively.
Fig. 3. The current (log I)forward voltage (V
F
) characteristics
of particle free control Ti Schottky contacts and Ti Schottky
contacts with embedded Au nano-particles to (a) n-type 6H-SiC
at dierent measurement temperature 25, 50, 75, 100, and 125
C and (b) n-type 4H-SiC at dierent measurement temperature
25, 100, 200, and 300 C. The SBHs and ideality factors are
summarized in Table 1.
Fig. 4. 1=C
2
vs reverse voltage (V
R
) for p-type control Ti
Schottky contacts and Ti Schottky contacts with embedded Au
nano-particles to 4H-SiC and 6H-SiC at the frequency of 100
kHz at 25 C. The diodes were annealed at 550 C using RTA.
The contact area is 1:26 10
3
cm
2
.
S.-K. Lee et al. / Solid-State Electronics 46 (2002) 14331440 1435
From the IV measurements, the SBHs for control Ti
Schottky contacts and Ti Schottky contacts with em-
bedded Au nano-particles on n-type SiC in the range of
25300 C were 1:12 0:01 eV (4H-SiC), 0:93 0:01 eV
(4H-SiC), 0:77 0:01 eV (6H-SiC), and 0:62 0:03 eV
(6H-SiC), respectively. Both n-type Ti Schottky contacts
with embedded Au nano-particles on 4H- and 6H-SiC
also had a thermally stable ideality factor of 1:06 0:03
(4H-SiC), 1:04 0:03 (4H-SiC), 1:14 0:07 (6H-SiC),
1:23 0:13 (6H-SiC). The SBHs for control n-type
Table 1
Summary of the SBH and ideality factor as a function of the measurement temperature for particle-free control Ti Schottky contacts
and Ti Schottky contacts with embedded Au nano-particles to n- and p-type 4H- and 6H-SiC using currentvoltage measurements
Samples Measurement temperature (C)
25 50 75 100 125 150 175 200 250 300
4H p Nano
a
/
Bp
1.66 x 1.71 x 1.77 x x x x x
g 1.41 x 1.37 x 1.33 x x x x x
Ti
b
/
Bp
1.71 x 1.76 x 1.75 x x x x x
g 1.33 x 1.31 x 1.35 x x x x x
n Nano
a
/
Bn
0.93 0.93 x 0.93 x 0.93 x 0.94 0.95 0.95
g 1.04 1.03 x 1.03 x 1.04 x 1.03 1.02 1.11
Ti
b
/
Bn
1.12 1.11 x 1.11 x 1.11 x 1.12 1.13 1.14
g 1.03 1.03 x 1.05 x 1.05 x 1.06 1.14 1.06
6H p Nano
a
/
Bp
1.60 x 1.61 x 1.66 x x x x x
g 1.38 x 1.44 x 1.41 x x x x x
Ti
b
/
Bp
1.70 x 1.73 x 1.79 x x x x x
g 1.24 x 1.24 x 1.20 x x x x x
n Nano
a
/
Bn
0.59 0.59 0.59 0.59 0.61 0.63 0.65 0.68 x x
g 1.05 1.07 1.13 1.27 1.36 1.32 1.35 1.30 x x
Ti
b
/
Bn
0.76 0.76 0.76 0.76 0.77 0.78 0.78 0.78 x x
g 1.07 1.07 1.10 1.12 1.13 1.13 1.20 1.30 x x
x: not performed.
a
Ti Schottky contacts with embedded Au nano-particles.
b
Particle-free control Ti Schottky contacts.
Table 2
Summary of the SBH and doping concentration as a function of the measurement temperature for particle-free control Ti Schottky
contacts and Ti Schottky contacts with embedded Au nano-particles to n- and p-type 4H- and 6H-SiC using capacitancevoltage
measurements
Samples Measurement temperature (C)
25 75 125
4H-SiC p Nano
a
/
Bp
(eV) 1.94 1.94 1.87
Concentration (cm
3
) 6:86 10
15
6:82 10
15
6:75 10
15
Ti
b
/
Bp
(eV) 2.26 2.00 1.89
Concentration (cm
3
) 7:22 10
15
6:99 10
15
6:79 10
15
n Nano
a
/
Bn
(eV) 0.73 0.75 0.69
Concentration (cm
3
) 2:15 10
15
2:41 10
15
2:28 10
15
Ti
b
/
Bn
(eV) 0.93 0.98 0.99
Concentration (cm
3
) 2:07 10
15
2:68 10
15
2:81 10
15
6H-SiC p Nano
a
/
Bp
(eV) 1.74 1.81 1.72
Concentration (cm
3
) 4:02 10
15
4:07 10
15
3:97 10
15
Ti
b
/
Bp
(eV) 1.94 1.82 1.79
Concentration (cm
3
) 4:62 10
15
4:40 10
15
4:43 10
15
n Nano
a
/
Bn
(eV) 0.62 0.59 0.55
Concentration (cm
3
) 1:06 10
16
1:06 10
16
1:15 10
16
Ti
b
/
Bn
(eV) 0.79 0.77 0.71
Concentration (cm
3
) 1:01 10
16
1:06 10
16
1:05 10
16
a
Ti Schottky with embedded Au nano-particles.
b
Particle-free control Ti Schottky contacts.
1436 S.-K. Lee et al. / Solid-State Electronics 46 (2002) 14331440
Ti/4H-SiC and Ti/6H-SiC were in good agreement with
earlier work [16,17]. The results from the IV measure-
ments clearly indicated that the SBH for Ti Schottky
contacts with embedded Au nano-particles on n-type SiC
was 0.19 eV (4H-SiC) and 0.15 eV (6H-SiC) lower than
those of the control Ti Schottky contacts as shown in Fig.
5(a) and (b). As shown in Fig. 6(a) and (b), the CV
measurements also conrmed these SBH lowering eects
with the value of 0.25 eV (4H-SiC) and 0.17 eV (6H-SiC)
lower than those of control Ti Schottky contacts even
though there is slightly dierent value of SBH be-
tween these two measurement techniques [18]. For p-type
Schottky contacts, we measured IV and CV charac-
teristics of at least 20 dierent diodes due to the unifor-
mity variation and took the average value for evaluation.
The SBHs for p-type Ti Schottky contacts with embedded
Au nano-particles on SiC were also 0.020.05 eV (4H-
SiC) and 0.10.13 eV (6H-SiC) lower than those for the
control Ti Schottky contacts in the temperature 25125
Ceven though both contacts have a slightly high value of
the ideality factors of 1.331.41 (4H-SiC) and 1.201.44
(6H-SiC) as seen in early works for p-type by Raghuna-
tan and Baliga [19]. From these measurements, the SBH
dierence between the Ti Schottky and Ti Schottky con-
tacts with embedded Au nano-particles for n-type is
slightly higher than those for p-type SiC. For p-type at 25
C from CV measurements, the SBH lowering eect is
clear as shown in Fig. 6(a) and (b). In order to understand
this reduction of the SBH for Ti Schottky contacts with
embedded Au nano-particles to 4H- and 6H-SiC both
from IV and CV measurements, it has been proposed
that SBH lowering is caused by an enhanced electric
eld at the depletion region close to the surface of the
Fig. 5. The SBH of n- and p-type control Ti Schottky contacts
and Ti Schottky contacts with embedded Au nano-particles to
(a) 4H-SiC and (b) 6H-SiC as a function of the measurement
temperature using IV measurements.
Fig. 6. The SBH of n- and p-type control Ti Schottky contacts
and Ti Schottky contacts with embedded Au nano-particles to
(a) 4H-SiC and (b) 6H-SiC as a function of the measurement
temperature using CV measurements.
S.-K. Lee et al. / Solid-State Electronics 46 (2002) 14331440 1437
semiconductor due to the small size of the Au nano-
particles and the large SBH dierence [20]. According to
Tungs dipole-layer approach of the potential and the
electronic transport at MS interface, the potential dis-
tribution for circular patch geometry at MS interface is
given by [20]
V 0; 0; z V
bi
1
_

z
w
_
2
V
a
V
n
D/
TiAu
1
_

z
z
2
R
2
0

1=2
_
5
where z is the distance from the surface of semicon-
ductor, w is the depletion width, R
0
is the radius of the
circular patch, and D/
TiAu
is the dierence of the barrier
height between Ti and Au metals. In Eq. (5) the rst
three terms represent the potential within the depletion
approximation due to a uniform SBH of /
Ti
. The last
term is the variation of the potential due to the presence
of a SBH dierence. The Au nano-particle region can be
approximated to a circular patch with some eective
radius (in this work 10 nm). Fig. 7(a) and (b) shows the
calculated conduction band potential as a function of
the depth distance from the surface and the radius of the
circular patch using Eq. (5) at the bias voltage. As
shown in Fig. 7(a) for n-type 4H-SiC, the high barrier
contacts (Ti with embedded Au nano-particles) sur-
rounded by lower barrier contacts (particle free Ti
Schottky) have no pinch-o due to the lower barrier
region. However, the potential distribution for p-type
4H-SiC shown in Fig. 7(b) shows that the Schottky
contacts are pinched-o as seen in Tungs work [20]. Eq.
(5) also suggested that the potential at the MS interface
is highly dependent on the radius of the circular patch
and SBH dierence (D/
TiAu
) between Ti and Au con-
tacts. The electric eld (E) can simply be obtained by
dierentiating Eq. (5) with respect to the distance (z)
from the surface of the semiconductor, given by
E0; 0; z V
bi
2
w
_

2z
w
2
_
D/
TiAu
1

z
2
R
2
0
_
_

z
2

z
2
R
2
0

3
_
_

_ 6
Fig. 8(a) and (b) shows the electric eld distribution
as a function of the depth from the surface at the n- and
p-type 4H-SiC, respectively. As shown in Fig. 8(a) and
(b), due to the small size of the Au nano-particles
and large dierence of the SBH between Ti and Au
metals, the electric eld at the MS interface is increased.
The magnitude of electric eld for n- and p-type SiC was
calculated to be 0:07 10
7
Vcm
1
(n-4H- and 6H-SiC),
0:06 10
7
Vcm
1
(p-4H-SiC), and 0:04 10
7
Vcm
1
(p-6H-SiC), respectively. The summary of the calcula-
tion for electric eld and barrier height lowering is
shown in Table 3. Using Eq. (6), the barrier lowering can
be calculated and given by
D/

qE
m
4pe
S
_
7
where E
m
is the maximum electric eld. In general, we
can observe a reduction of the SBH due to the image
force lowering under the applications of the reverse bias
[21]. When an electron in the semiconductor approaches
the metal at a distance, a positive mirror image force of
the same magnitude occurs in the metal at a distance,
resulting in an electrostatic force. The image force po-
tential adds to the potential due to the Schottky barrier.
Fig. 7. Calculated conduction band potential distributions for
(a) n- and (b) p-type 4H-SiC as a function of the radius of the
circular patch and the depth from the surface (z) using Eq. (5).
The insert shows a schematic diagram of a high barrier circular
patch (Au) surrounded by low barrier metals (Ti) on SiC. The
values used in these calculations are summarized in Table 3.
1438 S.-K. Lee et al. / Solid-State Electronics 46 (2002) 14331440
We could see that there is no image force lowering at the
forward bias in Schottky diode due to low electric eld
at the forward bias. However, from our calculation re-
sults shown in Table 3, there is enough electric eld to
reduce the barrier height due to the small size of metal
particles and large dierence of the barrier height be-
tween two metals. The SBH lowering due to the presence
of the small size metal particles and large dierence of
the barrier height can be obtained by substituting the
maximum electric eld by electric eld in Eq. (6). As
seen in Eqs. (5) and (6), the most dominant factor for
having a high electric eld, causing a barrier height
lowering eect, at the interface is the barrier height
dierence (D/
TiAu
) between two metals. A similar ex-
periment with Au/InP done by Anand et al. [9] showed
that there was no dierence in SBH between the Au
Schottky contacts with the embedded Ag nano-particles
and only particle-free Au Schottky contacts on InP. The
reason they could not observe the barrier height lower-
ing eect is that the barrier height dierence D/
AgAu
)
for Ag/Au/n-InP is a factor 6 to 10 lower than that
D/
TiAu
) of the Ti/Au/n-SiC system [13]. A dierent
approach to achieve the SBH lowering eect was taken
by Schoen et al. [7]. They fabricated a DMT SiC Scho-
ttky pinch-rectier with a small/large barrier height (Ti/
Ni) on n-type 4H-SiC. They found a slightly lowered
barrier height (%0.04 eV) for Ti/Ni DMT Schottky di-
odes compared to only Ti Schottky diodes on the same
SiC sample even though they did not use the small size
of metals for low barrier height metal contacts. From
the results in Figs. 5 and 6, the reduction of the barrier
height (D/) for n-type SiC at 25 C is 0.190.20 eV (4H-
SiC) and 0.17 (6H-SiC) using both IV and CV mea-
surements. The D/ (0.05 eV for 4H, and 0.1 for 6H-SiC)
for p-type Schottky on SiC at 25 C using IV mea-
surements is lower than for n-type Schottky on SiC,
which could be due to the lower SBH dierence as seen
in the theoretical calculation results shown in Table 3.
Fig. 8. Calculated electric eld distribution for (a) n- and (b) p-
type 4H-SiC as a function of the radius of the circular patch
and the depth from the surface (z) using Eq. (6). The values
used in these calculations are summarized in Table 3.
Table 3
Summary of the calculation for n- and p-type 4H- and 6H-SiC using Tungs dipole layer approach [21]
SiC /
Bn;p
(eV) D (eV) (/
Ti
/
Au
) V
bi
(V) for Ti N
D;A
(cm
3
) w (nm) for Ti jEj (MVcm
1
) D/ (eV)
4H n Ti 1.12 0.63 0.92 2:1 10
15
667 0.07 0.10
Au 1.75
p Ti 1.94
a
0.59 1.74 7:0 10
15
424 0.06 0.10
Au 1.35
a
6H n Ti 0.73
b
0.64 0.53 1:0 10
16
242 0.07 0.10
Au 1.37
b
p Ti 1.94
c
0.49 1.74 4:4 10
15
661 0.04 0.08
Au 1.45
c
a
Values from Lee et al. [6].
b
Values from Waldrop et al. [3].
c
Values from Waldrop et al. [23].
S.-K. Lee et al. / Solid-State Electronics 46 (2002) 14331440 1439
The D/ for our experimental results is in reasonable
agreement with the theoretical calculation using a dipole
layer approach with the circular patch [20] even though
the D/ from the theoretical calculation is a factor of 2
lower than what we obtained from our measurements.
The reason for this could be a much higher electric eld
than we expected and calculated at the MS interface.
Other authors have simulated even higher electric elds
(3 10
7
Vcm
1
) at the interface in Si [22]. In addition,
the D/ for p-type from CV measurements is much
higher than from IV measurements which could be see
in previous reports [13,14]. Detailed further studies are
required for a more solid explanation.
4. Conclusion
Ti Schottky contacts with embedded Au nano-par-
ticles have been fabricated using an aerosol method to
various types of epilayers of SiC (n- and p-type 4H- and
6H-SiC). For comparison control samples consisting of
pure Au and Ti metals were also fabricated on the same
types of epilayers. For several sets of Schottky contacts
(n- type 4H- as well as 6H-SiC) and at dierent mea-
surement temperature, we observed that Ti Schottky
contacts with embedded Au nano-particles had 0.19
0.25 eV (4H-SiC) and 0.150.17 eV (6H-SiC) lower SBH
than those for particle free control Ti Schottky contacts
using IV and CV measurements. The SBHs for p-type
contacts to SiC for Ti Schottky contacts with embedded
Au nano-particles on SiC were also 0.020.05 eV (4H-
SiC) and 0.100.13 eV (6H-SiC) lower than those for Ti
control Schottky contacts using both IV and CV
measurements. The reduction of the SBH is explained by
using a simple model, a dipole layer approach, with
enhanced electric eld at the interface due to the small
size of the circular patch and large dierence of the
barrier height between two metals (Ti and Au).
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