AO4410

30V N-Channel MOSFET

General Description
The AO4410 uses advanced trench technology to provide excellent RDS(ON), shoot-through immunity, body diode characteristics and ultra-low gate resistance. This device is ideally suited for use as a low side switch in Notebook CPU core power conversion.

Product Summary
VDS (V) = 30V (VGS = 10V) ID = 18A RDS(ON) < 5.5m (VGS = 10V) RDS(ON) < 6.2m (VGS = 4.5V)

100% UIS Tested 100% Rg Tested

SOIC-8 Top View D D D D Bottom View D

G S S S

G S

Absolute Maximum Ratings TA=25 unless otherwise noted C Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current AF Pulsed Drain Current Power Dissipation Avalanche Current B Repetitive avalanche energy 0.3mH
B B

Maximum 30 12 18 15 80 3 2.1 30 135 -55 to 150

Units V V A

VGS TA=25 C TA=70 C TA=25 C TA=70 C ID IDM PD IAR EAR TJ, TSTG

W A mJ C

Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C

Symbol t 10s Steady-State Steady-State RJA RJL

Typ 31 59 16

Max 40 75 24

Units C/W C/W C/W

Alpha & Omega Semiconductor, Ltd.

www.aosmd.com

Electrical Characteristics (TJ=25 unless otherwise noted) C Symbol Parameter Conditions ID=250A, VGS=0V VDS=30V, VGS=0V C TJ=55 VDS=0V, VGS= 12V VDS=VGS ID=250A VGS=4.5V, VDS=5V VGS=10V, ID=18A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=4.5V, ID=15A Forward Transconductance Diode Forward Voltage VDS=5V, ID=18A IS=1A,VGS=0V C TJ=125 0.8 80 4.7 6.4 5.2 102 0.64 1 4.5 9130 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 0.2 625 387 0.4 72.4 VGS=10V, VDS=15V, ID=18A 13.4 16.8 11 VGS=10V, VDS=15V, RL=0.83, RGEN=3 IF=18A, dI/dt=100A/s 7 99 13 33 22.2 15 11 135 19.5 40 30 542 0.8 85 10500 5.5 7.4 6.2 1.1 Min 30 1 5 100 1.5 Typ Max Units V A nA V A m m S V A pF pF pF nC nC nC ns ns ns ns ns nC

STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current

Maximum Body-Diode Continuous Current

DYNAMIC PARAMETERS Input Capacitance Ciss Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance

SWITCHING PARAMETERS Qg(4.5V) Total Gate Charge Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=18A, dI/dt=100A/s

A: The value of R JA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25 The value in any given application depends on the user's specific board design. C. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead R JL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25 The C. SOA curve provides a single pulse rating. F. The current rating is based on the t 10s junction to ambient thermal resistance rating. Rev7: Nov 2010

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Alpha & Omega Semiconductor, Ltd.

www.aosmd.com

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

5 VDS=15V ID=18A Capacitance (pF) 10000 100000

4 VGS (Volts)

Ciss

Coss 1000 Crss 100

0 0 10 40 50 60 70 80 Qg (nC) Figure 7: Gate-Charge Characteristics 20 30 90

15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics

10

30

100.0 RDS(ON) limited 10ms 10.0 ID (Amps) 0.1s 1s 10s 1.0 TJ(Max)=150C TA=25C 0.1 0.1 10 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 1 100 DC 100s 1ms Power (W) 10s

100 80 60 40 20 0 0.001 TJ(Max)=150C TA=25C

0.01

0.1

10

100

1000

Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)

10 Z JA Normalized Transient Thermal Resistance

D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=40C/W

In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

0.1

PD Ton 0.1 1

FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

0.01 0.00001 Single Pulse 0.001 0.0001 0.01

T 100 1000

10

Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance

Alpha & Omega Semiconductor, Ltd.

www.aosmd.com

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

60 10V 50 2.5V 40 ID (A) 30 20 10 0 0 1 2 3 4 5 VDS (Volts) Fig 1: On-Region Characteristics 6.0 Normalized On-Resistance 1.6 ID=18A 1.4 VGS=10V 1.2 VGS=4.5V VGS=2V ID(A) 40 30 20 125C 10 0 0 0.5 1 1.5 2 2.5 VGS(Volts) Figure 2: Transfer Characteristics 25C 50 VDS=5V 60

5.5 RDS(ON) (m )

VGS=4.5V

5.0 VGS=10V 4.5

4.0 0 10 20 30 40 50 60 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage

0.8 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature

16

1.0E+02 1.0E+01

12 ID=18A RDS(ON) (m ) 8 125C IS (A)

1.0E+00 125C 1.0E-01 1.0E-02 1.0E-03 1.0E-04 1.0E-05 25C

25C

FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

0 0 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage

0.0

0.2

0.4

0.6

0.8

1.0

VSD (Volts) Figure 6: Body-Diode Characteristics

Alpha & Omega Semiconductor, Ltd.

www.aosmd.com

Gate Charge Test Circuit & Waveform

Vgs Qg 10V

+
VD C

DUT Vgs Ig

+
VDC

Vds

Qgs

Q gd

Charge

Resistive Switching Test Circuit & Waveforms

R L Vds Vds

Vgs Rg

DU T

+
VD C

90% Vdd 10% Vgs

t d(on) tr t on t d(off) t off tf

Vgs

Unclamped Inductive Switching (UIS) Test Circuit & Waveforms

L Vds Id Vgs Rg DU T Vgs Vgs Vgs Vds EAR 1/2 LI =
2 AR

BVDSS

+
VDC

Vdd Id

I AR

Diode Recovery Tes t Circuit & Waveforms

Vds + DUT Vgs Q rr = - Idt

Vds -

Isd Vgs

Isd

IF

dI/dt IRM

trr

+
VD C

Vdd Vds

Ig

Vdd

Alpha & Omega Semiconductor, Ltd.

www.aosmd.com