Data Sheet

Quarter 4, 2004 SG1009Q42004 Rev 0
Whats New!
Market
900 MHz Cellular Base Station CDMA 1.9 GHz Cellular Base Station W -CDMA 2.1 GHz Cellular Base Station W -CDMA 3.5 GHz Power GaAs Transistors General Purpose Linear Amplifiers ICs CATV GaAs
Product
MRF5S9070NR1, MRF5S9100MR1, MRF5S9100MBR1, MRF5S9100NR1, MRF5S9100NBR1, MRF5S9101MR1, MRF5S9101MBR1, MRF5S9101NR1, MRF5S9101NBR1, MRF9200LR3, MRF9200LSR3 MRF5S19060NR1, MRF5S19060NBR1, MRF5S19060MR1, MRF5S19060MBR1, MRF5S19090HR3, MRF5S19090HSR3, MRF5S19100HR3, MRF5S19100HSR3, MRF6S19100HR3, MRF6S19100HSR3, MRF5S19130HR3, MRF5S19130HSR3, MRF5S19150HR3, MRF5S19150HSR3 MRF5S21090HR3, MRF5S21090HSR3, MRF5P21180HR6, MRF6S21100HR3, MRF6S21100HSR3, MRF6S21140HR3, MRF6S21140HSR3, MRF6P21190HR6 MRFG35030R5 MMG3001NT1, MMG3002NT1, MMG3003NT1 MHW1346, MHW8247A, MHW8267A, MHW8342, MHW9186A, MHW9247A, MHW9267A
Scheduled Introductions for 2004

Market
GPS (Single Chip GPS Solution) GSM Cellular Cellular, GPS, ISM 900 MHz Cellular Base Station GSM/GSM EDGE/TDMA 1.8 GHz Cellular Base Station CDMA 1.9 GHz Cellular Base Station W -CDMA 2.1 GHz Cellular Base Station 2.4 GHz ISM 2.4 GHz ZigBeet Networking MMDS 2.6 GHz Cellular Base Station WLAN CATV Silicon Bipolar MG4100, FS-Oncore MMM6035 MC13820 MRF6S9130H, MRF6S9130HS MRF6S18060N, MRF6S18060NB, MRF6S18060M, MRF6S18060MB, MRF6S18090N, MRF6S18090NB, MRF6S18090M, MRF6S18090MB MRF6S19060N, MRF6S19060NB, MRF6S19060M, MRF6S19060MB, MRF6S19100N, MRF6S19100NB, MRF6S19100M, MRF6S19100MB, MRF6S19140H, MRF6S19140HS MRF6S21060N, MRF6S21060NB, MRF6S21060M, MRF6S21060MB, MRF6S21100N, MRF6S21100NB, MRF6S21100M, MRF6S21100MB MC13191 MC13192 MRF6P27160HR6, MRF6S27085HR3, MRF6S27085HSR3 MMG2401 MHW7312, MHW8312, MHW8342
Product
SG10092 SG1009Q42004
Whats New! (continued)

2.4 GHz TRANSCEIVERS FOR PROPRIETARY AND ZigBeet NETWORKING
Freescale Semiconductor introduces two new transceiver ICs as part of its scalable 2.4 GHz connectivity solutions. The MC13192 includes a complete 250 kbps Direct Sequence Spread Spectrum (DSSS) packet modem compliant with the IEEE 802.15.4 WPAN Standard. It interfaces with Freescales new MC9S08 family of 8bit microprocessors to provide proprietary 802.15.4 or ZigBee connectivity. Interface with the MCU is via SPI allowing the ultimate in flexibility and scalability. Freescales complete Zstack ZigBee software stack will be available by years end. Freescales 802.15.4 MAC is available now. The MC13191 targets lowcost, simple pointtopoint and star network applications. It also includes a 250 kbps DSSS packet modem and interfaces with a variety of MCUs via SPI. A Simple Medium Access Control software stack of less than 4 kbytes provides a starting point for pointtopoint monitoring and control applications. Now, an expanded portfolio of HV6 devices is available with options including highperforming, high power, ceramic devices and costeffective 2000 MHz plastic RF transistors qualified at 200_C maximum die temperature. Freescale offers HV6 devices in both ceramic and plastic. The HV6 ceramic family includes the MRF6S19100H/S, MRF6S19140H/S, MRF6S21100H/S and MRF6S21140H/S devices. The HV6 plastic family, which provides a reliable, robust and economical alternative to ceramic, includes the MRF6S19060N/NB, MRF6S19100N/NB, MRF6S21060N/NB and MRF6S21100N/NB devices.
SINGLE CHIP GPS SOLUTION FOR MSBASED, MSASSISTED AND AUTONOMOUS APPLICATIONS
The MG4100 device is the industrys first commercial single chip GPS solution. Integrating all the functional blocks of a GPS receiver into a tiny 7*7 mm FBGA, the device offers simplicity of use, fast time to market and high performance. Thanks to the integrated ARM7 processor, realtime host processing tasks are eliminated, reducing software engineering risks and enabling host platform flexibility. Once software is bootloaded into the IC, it is capable of supporting AssistedGPS and Autonomous operation, with signal detection to 152 dBm. The low IF front end and integrated LNA support the use of passive or active antennas, and system level clocks can be shared from the host using the onboard fractional synthesizer, further reducing costs. Serial communications are via a configurable SPI/UART port.
NEW FAMILY OF InGaP HBT AMPLIFIERS DESIGNED FOR USE IN GENERAL PURPOSE APPLICATIONS
Freescale Semiconductor introduces InGaP HBT general purpose amplifiers (GPAs) designed for a broad range of Class A, smallsignal, high linearity, general purpose applications. These devices (MMG3001NT1, MMG3002NT1, MMG3003NT1 and MMG3005) are the first of a full portfolio of GPAs suitable for applications with frequencies from 0.04 to 3.6 GHz and can be used in applications such as Cellular, PCS, BWA, WLL, PHS, CATV, VHF, UHF, UMTS or general smallsignal RF. Freescales InGaP HBT GPA portfolio offers high volume production and dropin replacement capability, better thermal characteristics and better ruggedness compared to the competition. The MMG3001NT1, MMG3002NT1 and MMG3003NT1 are in full production. Samples of the MMG3005 are expected early in Q4, 2004.
FS ONCOREt TINY FORM FACTOR GPS MODULE

The FS Oncore module is a complete GPS receiver in a tiny 12*16.6 mm LGA package. Leveraging the features of the MG4100 single chip solution, it brings exceptional ease of use and program risk reduction. By eliminating unnecessary power and RF connectors, FS Oncore offers substantial cost savings when compared to traditional GPS modules. Since the module is supplied fully tested for GPS performance, further cost savings are made in the customers final test environment, removing the need for multichannel GPS simulators. Once software is bootloaded into the module, it is capable of supporting AssistedGPS and Autonomous operation, with signal detection to 152 dBm. Utilizing innovative software power management features, the FS Oncore only keeps the onboard TCXO active while position measurements are active, reducing power consumption between fixes. Standby power with only the RTC running between fixes is a minimal 25 A typical. Supplied in tape and reel, the FS Oncore is the product of choice for GPS integration, from initial samples to full production.
Key Features
MMG3001NT1 Frequency: 403600 MHz P1dB: 18.5 dBm @ 900 MHz Power Gain: 20 dB @ 900 MHz Third Order Output Intercept Point: 32 dBm @ 900 MHz Single Voltage Supply Internally Matched to 50 Ohms Low Cost SOT89 Surface Mount Package MMG3002NT1 Frequency: 403600 MHz P1dB: 21 dBm @ 900 MHz Power Gain: 20 dB @ 900 MHz Third Order Output Intercept Point: 37.5 dBm @ 900 MHz Single Voltage Supply Internally Matched to 50 Ohms Low Cost SOT89 Surface Mount Package Frequency: 4002400 MHz P1dB: 30 dBm @ 2140 MHz Power Gain: 15 dB @ 2140 MHz Third Order Output Intercept Point: 45 dBm @ 2140 MHz Single Voltage Supply Internally Prematched to 50 Ohms Low Cost PQFN 5x5 Package
50OHM GSM/GPRS QUADBAND POWER AMPLIFIER MODULE USES HIIPA AND EMODE TECHNOLOGIES
By combining High Impedance Integrated Power Amplifier (HIIPA) packaging, and true enhancementmode (Emode) GaAs wafer process technologies, Freescale Semiconductor is defining a new paradigm for 50ohm power amplifier (PA) modules. The MMM5063 is currently the worlds smallest size quadband GSM/GPRS single power supply PA module and leads the way to smaller and more economical wireless products. This PA module uses the HIIPA packaging technique to provide a 50ohm solution without the need for additional external components. Design of the 50ohm impedance matching network at the output of the die is accomplished with capacitors and inductors, where capacitors are integrated onto the die, and inductors are implemented by wire bonds of variable lengths. The tolerance of the capacitor values, together with the precision of the wire bonding process, allow a matching impedance value with less design variance than can be achieved by using passive components on a traditional radio board. Because of its low offstate leakage current, this true enhancementmode device eliminates the drainsupply switch required for depletionmode pHEMT and MESFET devices. The Emode GaAs technology helps to reduce the cost and size of the end product by eliminating both the negative voltage generator and the drainsupply switch within the handset power amplifier section, as well as eliminating additional passive components.
MMG3003NT1
MMG3005
Frequency: 403600 MHz P1dB: 24.1 dBm @ 900 MHz Power Gain: 20 dB @ 900 MHz Third Order Output Intercept Point: 40.5 dBm @ 900 MHz Single Voltage Supply Internally Matched to 50 Ohms Low Cost SOT89 Surface Mount Package
EXPANDED PORTFOLIO OF 6TH GENERATION (HV6) RF LDMOS DEVICES

Designed for 2.5G and 3G wireless infrastructure applications, Freescale Semiconductor set an industry standard with the introduction of the MRF6S21100HR3, which delivers even greater power density and efficiency over previous generations.
SG10093 SG1009Q42004
RFICs
WIRELESS RADIO FREQUENCY PRODUCT

As a leading supplier of semiconductor products, Freescale Semiconductor has an extensive RF portfolio of products that serve the wireless infrastructure and subscriber markets. Utilizing LDMOS, BiCMOS, GaAs and SMARTMOSt technologies, Freescale is committed to the development of new products and expansion of its product offerings to meet the increasing global demands of ISM band and personal communications systems, including cellular phone, broadband data, TV broadcast, land mobile and CATV systems.
RF FRONT END ICs RFICs Downconverters

Product MC13770(42) (LNA) MC13770(43) (Mixer) Input Freq. MHz 2100 to 2170 2110 to 2170 LO Freq. Vdc n/a 2300 to 2360 2490 to 2550 190 380 IF Freq. MHz n/a Gain dB 15 5.0 10.0 NF dB 1.5 5.0 8.0 IIP3 dBm 0 20 3.0 Supply Current 3.0 mA 10 A 5.0 mA Packaging 1345/ QFN12 1345/ QFN12 System Applicability WCDMA, PCS, PDC WCDMA, PCS, PDC
Power Amplifiers
Product Freq. Range MHz 880915 17101785 18501910 824849 880915 17101875 18501910 Supply Voltage Range Vdc 2.7 to 5.5 Saturated Pout dBm (Typ) 35.2 33.8 34 35.2 35 33 33
Mode second.
PAE % (Typ)
Gain Pout/Pin dB (Typ)
Packaging
System Applicability
MMM5063
53 44 43 51 53 45 43
36.2 31.8 31.0 32.2 32 30 30
1383/ 7x7 mm Module 1561/ 6x6 mm Module
GSM900, DCS1800, PCS1900
MMM6035(46b)
3.0 to 4.5
GSM Cellular
(42)In LNA section, specifications are represented in High Gain Mode first and Bypass (43)In Mixer section, LO frequency ranges are specified for 190 MHz and 380 MHz IF. (46)To be introduced: a) 3Q04; b) 4Q04; c) 1Q05
SG10094 SG1009Q42004
RF BUILDING BLOCKS Amplifiers

Product RF Freq. Range MHz 400 to 2500 100 to 2500 Supply Voltage Range Vdc 2.5 to 3.0 2.7 to 5.0 Supply Current mA (Typ) 9.0 4.7 Standby Current A (Typ) <20 Small Signal Gain dB (Typ) 14.5 @ 1900 MHz 19 @ 900 MHz Output IP3 dBm (Typ) 24.5 @ 1900 MHz 16.5 @ 900 MHz NF dB (Typ) 1.38 @ 1900 MHz 0.9 @ 900 MHz Packaging System Applicability
MBC13720(18c) MBC13916(18c)
419B/ SOT363 1404/ SOT343R
ISM900, 2400, PCS, CDMA General Purpose Cascode Amp for VCOs, Buffers, & LNAs ISM900, ISM2400, GPS, Cellular, PCS, WCDMA
MC13820(18b,46b)
800 to 2500
2.7 to 3.0
2.8
10
18 @ 1575 MHz
18.5 @ 1575 MHz
1.2 @ 1575 MHz
1345/ QFN12
(18)Tape
and Reel Packaging Options: a) R1 = 500 units; b) R2 = 2,500 units; c) T1 = 3,000 units; d) T3 = 10,000 units; e) R2 = 1,500 units; f) T1 = 1,000 units; g) R2 = 4,000 units; h) R1 = 1,000 units; i) R3 = 250 units; j) T1 = 500 units; k) R2 = 450 units; l) T1 = 5,000 units; m) R2 = 2,000 units; n) R4 = 100 units; o) R6 = 150 units; p) R5 = 50 units. (46)To be introduced: a) 3Q04; b) 4Q04; c) 1Q05
RF BUILDING BLOCKS
SG10095 SG1009Q42004
RF/IF SUBSYSTEMS
RF/IF SUBSYSTEMS Transceivers

Product Supply Voltage V Supply Current @ 1% Duty Cycle (Typ) mA 0.30, TX 0.37, RX 0.30, TX 0.37, RX Standby Current (Typ) mA 500 Freq. Band GHz Sensitivity @ 1% PER (Typ) dBM 89 Serial Interface Data Rate (Spec) kbps Comm. Protocol System Applicability Packaging
MC13192(46b) MC13191(46b)
2.03.4
2.42.5
SPI
250
802.15.4
ZigBee 2.4 GHz ISM 2.4 GHz ISM
1311 (QFN32) 1311 (QFN32)
2.03.4
500
2.42.5
89
SPI
250
DSSS
MISCELLANEOUS FUNCTIONS ADCs/DACs

Product MC144110 MC144111 Function DAC DAC I/O Format Serial Serial Resolution 6 Bits 6 Bits Number of Analog Channels 6 4 OnChip Oscillator n/a n/a Other Features EmitterFollower Outputs EmitterFollower Outputs Packaging DW/751D DW/751G
Encoders/Decoders
Product Function Number of Address Lines Maximum Number of Address Codes Depends on Decoder 243 19,683 Number of Data Bits Operation Packaging
MC145026 MC145027 MC145028

(46)To
Encoder Decoder Decoder
Depends on Decoder 5 9
Depends on Decoder 4 0
Simplex Simplex Simplex
P/648, D/751B P/648, DW/751G P/648, DW/751G
be introduced: a) 3Q04; b) 4Q04; c) 1Q05
SG10096 SG1009Q42004
FREQUENCY SYNTHESIS Single PLL Synthesizers

Product Maximum Frequency MHz Supply Voltage V Nominal Supply Current mA 7.5 @ 5 V 7.5 @ 5 V 2@3V 6@5V Features Packaging
MC1451512 MC1451522 MC1451702
20 @ 5.0 V 20 @ 5.0 V 100 @ 3.0 V 185 @ 4.5 V
3.0 to 9.0 3.0 to 9.0 2.7 to 5.5
Parallel Interface Parallel Interface, Uses External DualModulus Prescaler Serial Interface, Auxiliary Reference Divider, Evaluation Kit MC145170EVK
DW/751F DW/751F P/648, D/751B, DT/948C
GPS SUBSYSTEM ICs Downconverter

Product MRFIC1505A(18m) RF Frequency (Typ) MHz 1575.42 Supply Voltage Range Vdc 2.73.3 Supply Current (Typ) mA 28 Standby Current mA 3 Conversion Gain (Typ) dB 105 System Applicability GPS Packaging
932 48 LQFP
Receivers
Product Frequency (Typ) MHz Supply Voltage Digital Core V RF I/O V Digital Core (Typ) mA @ Oper Mode @ RF Input (dBm) MG4100(46b) 1575.42 1.82.2 2.73.3 14 @ Integer Tracking @ 130 14 @ Integer Tracking @ 130 Supply Current RF I/O (Typ) mA @ Oper Mode @ RF Input (dBm) 40 @ Integer Tracking @ 130 42 @ Integer Tracking @ 130 15 @ Sleep 152 MSBased GPS MSAssisted GPS Autonomous GPS MSBased GPS MSAssisted GPS Autonomous GPS 64FBGA Total Supply Current (Typ) mA A @ Oper Mode RF Sensitivity (Typ) dBm System Applicability Packaging
FSOncore(46b)
1575.42
1.82.2
2.73.3
20 @ Sleep
152
24LGA
(18)Tape
and Reel Packaging Options: a) R1 = 500 units; b) R2 = 2,500 units; c) T1 = 3,000 units; d) T3 = 10,000 units; e) R2 = 1,500 units; f) T1 = 1,000 units; g) R2 = 4,000 units; h) R1 = 1,000 units; i) R3 = 250 units; j) T1 = 500 units; k) R2 = 450 units; l) T1 = 5,000 units; m) R2 = 2,000 units; n) R4 = 100 units; o) R6 = 150 units; p) R5 = 50 units. (46)To be introduced: a) 3Q04; b) 4Q04; c) 1Q05
SG10097 SG1009Q42004
FREQUENCY SYNTHESIS GPS SUBSYSTEM ICs
ACCESS AND REMOTE CONTROL
ACCESS AND REMOTE CONTROL Transmitters and Receivers

TRANSMITTER (TANGO3)
Product MC33493 Description PLL Tuned UHF Transmitter, OOK/FSK Modulation, - 40_C to +125_C Packaging TSSOP14 Band (MHz) 315/434/868 Data Rate (kbps) 1 to 11 MCU Interface 2 Logic Lines Operating Voltage (V) 1.8 to 3.6 Status Available
RECEIVERS (ROMEO2)
Product MC33591 MC33592 MC33593 MC33594 Description PLL Tuned UHF Receiver, OOK/FSK Modulation, IF BW = 500 kHz, - 40_C to +85_C PLL Tuned UHF Receiver, OOK Modulation, IF BW = 300 kHz, - 40_C to +85_C PLL Tuned UHF Receiver, OOK/FSK Modulation, IF BW = 500 kHz, - 40_C to +85_C PLL Tuned UHF Receiver, OOK/FSK Modulation (Data Manager in FSK only), IF BW = 500 kHz, - 40_C to +105_C Extended Temperature Packaging LQFP24 LQFP24 LQFP24 LQFP24 Band (MHz) 315/434 315/434 868 315/434 Data Rate (kbps) 1 to 11 1 to 11 1 to 11 1 to 11 MCU Interface SPI SPI SPI SPI Operating Voltage (V) 5 5 5 5 Status Available Available Samples Now Available
TAG READER (STARC) FOR IMMOBILIZER APPLICATIONS

Product MC33690 Description Stand - alone TAG Reader with Voltage Regulator Packaging SO20WB Band (kHz) 125 Data Rate 0.5 to 8 MCU Interface K line (ISO9141) Operating Voltage (V) 12 Status Available
68HC08 Family
Product ROM (Kbytes) RAM (Kbytes) Flash or OTP (Kbytes) 2K Flash EEPROM (Kbytes) Timer I/O Serial MUX A/D PWM Packaging Oper Voltage (V) 1.8 to 3.6 Oper Freq (MHz) 4.0 Max Temp Flash or OTP Flash Status Comments Documentation
MC68HC908RF2
n/a
128
n/a
1CH, 16Bit
12
n/a
n/a
n/a
See Timer
32pin LQFP (FA)
C, M
Available
RF transmitter integrated
MC68HC908RF2/D
SG10098 SG1009Q42004
RF TRANSISTORS RF HIGH POWER LDMOS TRANSISTORS

Freescale Semiconductor LDMOS technology is ideally suited for RF power amplifier applications. Several families of products have been targeted for specific markets including VHF and UHF portable/land mobile, 900 MHz linear cellular, GSM, TDMA and CDMA, digital television, GSM EDGE, PCS, UMTS, and WCDMA. With the unique LDMOS characteristics, these parts offer superior thermal performance. This is due to the simplified package design, which offers excellent Class AB intermodulation performance under medium peaktoaverage ratios providing a superior device choice for advanced digital modulations formats or high gain applications.
Mobile To 520 MHz

Designed for broadband VHF and UHF commercial and industrial applications. The high gain and broadband performance of these devices make them ideal for large - signal, common - source amplifier applications in 12.5/7.5 volt mobile, portable and base station operation.
Product Frequency Band(37) MHz Pout Watts Test Signal VDD Volts Gain (Typ)/Freq. dB/MHz Eff. (Typ) % JC C/W Packaging/Style
VHF & UHF, Land Mobile Radio, Class AB MRF1513T1(18f) MRF1511T1(18f) MRF1517T1(18f) MRF1518T1(18f) MRF1535T1(18j) MRF1535FT1(18j) MRF1550T1(18j) MRF1550FT1(18j) MRF1570T1(18j) MRF1570FT1(18j) MRF1570NT1(18j) MRF1570FNT1(18j)
(18)Tape
U U U U U U U U U U U U
400520 135175 430520 400520 400520 400520 135175 135175 400470 400470 400470 400470
3 CW 8 CW 8 CW 8 CW 35 CW 35 CW 50 CW 50 CW 70 CW 70 CW 70 CW 70 CW
1Tone 1Tone 1Tone 1Tone 1Tone 1Tone 1Tone 1Tone 1Tone 1Tone 1Tone 1Tone
7.5/12.5 7.5 7.5 12.5 12.5 12.5 12.5 12.5 12.5 12.5 12.5 12.5
11/520 11.5/175 11/520 11/520 10(Min)/520 10(Min)/520 10(Min)/175 10(Min)/175 10(Min)/470 10(Min)/470 10(Min)/470 10(Min)/470
55 55 55 55 50(Min) 50(Min) 50(Min) 50(Min) 50(Min) 50(Min) 50(Min) 50(Min)
4.0 2.0 2.0 2.0 0.90 0.90 0.75 0.75 0.75 0.75 0.75 0.75
466/1 466/1 466/1 466/1 1264/1 1264A/1 1264/1 1264A/1 1366/1 1366A/1 1366/1 1366A/1
and Reel Packaging Options: a) R1 = 500 units; b) R2 = 2,500 units; c) T1 = 3,000 units; d) T3 = 10,000 units; e) R2 = 1,500 units; f) T1 = 1,000 units; g) R2 = 4,000 units; h) R1 = 1,000 units; i) R3 = 250 units; j) T1 = 500 units; k) R2 = 450 units; l) T1 = 5,000 units; m) R2 = 2,000 units; n) R4 = 100 units; o) R6 = 150 units; p) R5 = 50 units. (37)U = Unmatched; I = Input; I/O = Input/Output.
For additional information on RF LDMOS High Power Transistor Products, Tape and Reel Specifications, Case Dimensions for all packages, and a device index, refer to SG46/D Wireless RF Product Selector Guide.
SG10099 SG1009Q42004
RF TRANSISTORS
RF TRANSISTORS
RF HIGH POWER LDMOS TRANSISTORS (continued) TV Broadcast To 1000 MHz

Frequency Band(37) MHz Pout Watts Test Signal VDD Volts Gain (Typ)/Freq. dB/MHz Eff. (Typ) % JC C/W Packaging/Style Product
470 - 1000 MHz, Class AB MRF373ALR1(18a) MRF373ALSR1(18a) MRF374A MRF372 MRF372R5(18p) MRF377 MRF377R3(18i) MRF377R5(18p) U U U I I I/O I/O I/O 470860 470860 470860 470860 470860 470860 470860 470860 75 CW 75 CW 130 PEP 180 PEP 180 PEP 45 AVG 45 AVG 45 AVG 1Tone 1Tone 2Tone 2Tone 2Tone OFDM OFDM OFDM 32 32 32 32 32 32 32 32 18.2/860 18.2/860 17.3/860 17/860 17/860 18.2/860 18.2/860 18.2/860 60 60 41.2 36 36 23 23 23 0.89 0.63 0.58 0.5 0.5 0.36 0.36 0.36 360B/1 360C/1 375F/1 375G/1 375G/1 375G/1 375G/1 375G/1
Cellular
To 1000 MHz
Product Frequency Band(37) MHz Pout (Typ) Watts Test Signal VDD Volts Gain (Typ)/Freq. dB/MHz Eff. (Typ) % JC C/W Packaging/Style
800 - 1000 MHz, Class AB MRF9002R2(18e) MRF9030MBR1(18a) MRF9030MR1(18a) MRF9030LR1(18a) MRF9030LSR1(18a) MRF9045MBR1(18a) MRF9045MR1(18a) MRF9045LR1(18a) MRF9045LSR1(18a)
(18)Tape
U U U U U U U U U
960 945 945 945 945 945 945 945 945
(3x) 2 PEP(41) 30 PEP 30 PEP 30 PEP 30 PEP 45 PEP 45 PEP 45 PEP 45 PEP
2Tone 2Tone 2Tone 2Tone 2Tone 2Tone 2Tone 2Tone 2Tone
26 26 26 26 26 28 28 28 28
18/960 20/945 20/945 19/945 19/945 19/945 19/945 18.8/945 18.8/945
50 41 41 41.5 41.5 41 41 42 42
12 1.08 1.08 1.9 1.5 0.85 0.85 1.4 1.0
978/ 1337/1 1265/1 360B/1 360C/1 1337/1 1265/1 360B/1 360C/1
and Reel Packaging Options: a) R1 = 500 units; b) R2 = 2,500 units; c) T1 = 3,000 units; d) T3 = 10,000 units; e) R2 = 1,500 units; f) T1 = 1,000 units; g) R2 = 4,000 units; h) R1 = 1,000 units; i) R3 = 250 units; j) T1 = 500 units; k) R2 = 450 units; l) T1 = 5,000 units; m) R2 = 2,000 units; n) R4 = 100 units; o) R6 = 150 units; p) R5 = 50 units. (37)U = Unmatched; I = Input; I/O = Input/Output. (41)Three individual transistors in a single package.
SG100910 SG1009Q42004
RF HIGH POWER LDMOS TRANSISTORS (continued) Cellular To 1000 MHz (continued)

800 - 1000 MHz, Class AB (continued) MRF5S9070NR1(18a) MRF5S9070MR1(18a) MRF9060MBR1(18a) MRF9060MR1(18a) MRF9060LR1(18a) MRF9060LSR1(18a) MRF652270R3(18i) MRF9080LR3(18i) MRF9080LSR3(18i) MRF9085LR3(18i) MRF9085LSR3(18i) MRF5S9100NR1(18a) MRF5S9100NBR1(18a) MRF5S9100MR1(18a) MRF5S9100MBR1(18a) MRF9100R3(18i) MRF9100SR3(18i) MRF5S9101NR1(18a) MRF5S9101NBR1(18a) MRF5S9101MR1(18a)
(18)Tape
U U U U U U I I I I I I I I I I/O I/O I I I
880 880 945 945 945 945 921960 921960 921960 880 880 880 880 880 880 921960 921960 869960 869960 869960
14 AVG 14 AVG 60 PEP 60 PEP 60 PEP 60 PEP 70 CW 70 CW 70 CW 90 PEP 90 PEP 20 AVG 20 AVG 20 AVG 20 AVG 100 CW 100 CW 100 CW 100 CW 100 CW
NCDMA NCDMA 2Tone 2Tone 2Tone 2Tone 1Tone 1Tone 1Tone 2Tone 2Tone NCDMA NCDMA NCDMA NCDMA 1Tone 1Tone 1Tone 1Tone 1Tone
26 26 26 26 26 26 26 26 26 26 26 26 26 26 26 26 26 26 26 26
17.8/880 17.8/880 18/945 18/945 17/945 17/945 16/921,960 18.5/921,960 18.5/921,960 17.9/880 17.9/880 19.5/880 19.5/880 19.5/880 19.5/880 17.2/960 17.2/960 17.5/960 17.5/960 17.5/960
30 30 40 40 40 40 58 52 52 40 40 28 28 28 28 60 60 60 60 60
0.80 0.80 0.56 0.56 1.1 0.8 1.1 0.7 0.7 0.7 0.7 0.52 0.52 0.52 0.52 1.0 1.0 0.41 0.41 0.41
1265/1 1265/1 1337/1 1265/1 360B/1 360C/1 465D/1 465/1 465A/1 465/1 465A/1 1486/1 1484/1 1486/1 1484/1 465/1 465A/1 1486/1 1484/1 1486/1
and Reel Packaging Options: a) R1 = 500 units; b) R2 = 2,500 units; c) T1 = 3,000 units; d) T3 = 10,000 units; e) R2 = 1,500 units; f) T1 = 1,000 units; g) R2 = 4,000 units; h) R1 = 1,000 units; i) R3 = 250 units; j) T1 = 500 units; k) R2 = 450 units; l) T1 = 5,000 units; m) R2 = 2,000 units; n) R4 = 100 units; o) R6 = 150 units; p) R5 = 50 units. (37)U = Unmatched; I = Input; I/O = Input/Output. New Product
SG100911 SG1009Q42004
RF TRANSISTORS
RF TRANSISTORS
RF HIGH POWER LDMOS TRANSISTORS (continued) Cellular To 1000 MHz (continued)

800 - 1000 MHz, Class AB (continued) MRF5S9101MBR1(18a) MRF9120R3(18i) MRF9120LR3(18i) MRF6S9130H(46b) MRF6S9130HS(46b) MRF9130LR3(18i) MRF9130LSR3(18i) MRF9135LR3(18i) MRF9135LSR3(18i) MRF9180R6(18o) MRF9200LR3(18i) MRF9200LSR3(18i) MRF9210R3(18i) I I I I I I I I I I I/O I/O I/O 869960 880 880 880 880 921960 921960 880 880 880 880 880 880 100 CW 120 PEP 120 PEP 27 AVG 27 AVG 130 CW 130 CW 25 AVG 25 AVG 170 PEP 40 AVG 40 AVG 40 AVG 1Tone 2Tone 2Tone NCDMA NCDMA 1Tone 1Tone NCDMA NCDMA 2Tone NCDMA NCDMA NCDMA 26 26 26 28 28 28 28 26 26 26 26 26 26 17.5/960 16.5/880 16.5/880 18.5/880 18.5/880 16.5/921,960 16.5/921,960 17.8/880 17.8/880 17.5/880 17.5/880 17.5/880 16.5/880 60 39 39 30 30 48 48 25 25 39 25 25 25.5 0.6 0.6 0.6 0.6 0.45 0.28 0.28 0.31 0.41 0.45 0.45 1484/1 375B/1 375B/1 465/1 465A/1 465/1 465A/1 465/1 465A/1 375D/1 465B/1 465C/1 375G/1
PCS and 3G
To 2200 MHz
Frequency Band(37) MHz Pout (Typ) Watts Test Signal VDD Volts Gain (Typ)/Freq. dB/MHz Eff. (Typ) % JC C/W Packaging/Style
Product
1800 - 2000 MHz, Class AB (GSM1800, GSM1900, GSM EDGE and PCS TDMA) MRF18030ALR3(18i) MRF18030ALSR3(18i) MRF18030BLR3(18i) MRF18030BLSR3(18i) MRF6S18060NR1(18a,46b)
(18)Tape
I/O I/O I/O I/O I/O
18051880 18051880 19301990 19301990 18002000
30 CW 30 CW 30 CW 30 CW 60 CW
1Tone 1Tone 1Tone 1Tone 1Tone
26 26 26 26 26
14/1805,1880 14/1805,1880 14/1930,1990 14/1930,1990 15/1990
50 50 50 50 56
2.1 2.1 2.1 2.1
465E/1 465F/1 465E/1 465F/1 1486/1
and Reel Packaging Options: a) R1 = 500 units; b) R2 = 2,500 units; c) T1 = 3,000 units; d) T3 = 10,000 units; e) R2 = 1,500 units; f) T1 = 1,000 units; g) R2 = 4,000 units; h) R1 = 1,000 units; i) R3 = 250 units; j) T1 = 500 units; k) R2 = 450 units; l) T1 = 5,000 units; m) R2 = 2,000 units; n) R4 = 100 units; o) R6 = 150 units; p) R5 = 50 units. (37)U = Unmatched; I = Input; I/O = Input/Output. (46)To be introduced: a) 3Q04; b) 4Q04; c) 1Q05 New Product
SG100912 SG1009Q42004
RF HIGH POWER LDMOS TRANSISTORS (continued) PCS and 3G To 2200 MHz (continued)
Frequency Band(37) MHz Pout (Typ) Watts Test Signal VDD Volts Gain (Typ)/Freq. dB/MHz Eff. (Typ) % JC C/W Packaging/Style Product
1800 - 2000 MHz, Class AB (GSM1800, GSM1900, GSM EDGE and PCS TDMA) (continued) MRF6S18060NBR1(18a,46b) MRF6S18060MR1(18a,46b) MRF6S18060MBR1(18a,46b) MRF18060AR3(18i) MRF18060ASR3(18i) MRF18060ALSR3(18i) MRF18060BR3(18i) MRF18060BSR3(18i) MRF18060BLSR3(18i) MRF18085AR3(18i) MRF18085ALSR3(18i) MRF18085BR3(18i) MRF18085BLSR3(18i) MRF6S18090NR1(18a,46c) MRF6S18090NBR1(18a,46c) MRF6S18090MR1(18a,46c) MRF6S18090MBR1(18a,46c) MRF18090AR3(18i) MRF18090BR3(18i) MRF18090BSR3(18i)
(18)Tape
I/O I/O I/O I/O I/O I/O I/O I/O I/O I/O I/O I/O I/O I/O I/O I/O I/O I/O I/O I/O
18002000 18002000 18002000 18051880 18051880 18051880 19301990 19301990 19301990 18051880 18051880 19301990 19301990 18002000 18002000 18002000 18002000 18051880 19301990 19301990
60 CW 60 CW 60 CW 60 CW 60 CW 60 CW 60 CW 60 CW 60 CW 85 CW 85 CW 85 CW 85 CW 90 CW 90 CW 90 CW 90 CW 90 CW 90 CW 90 CW
1Tone 1Tone 1Tone 1Tone 1Tone 1Tone 1Tone 1Tone 1Tone 1Tone 1Tone 1Tone 1Tone 1Tone 1Tone 1Tone 1Tone 1Tone 1Tone 1Tone
26 26 26 26 26 26 26 26 26 26 26 26 26 26 26 26 26 26 26 26
15/1990 15/1990 15/1990 13/1805,1880 13/1805,1880 13/1805,1880 13/1930,1990 13/1930,1990 13/1930,1990 15/1805,1880 15/1805,1880 12.5/1930,1990 12.5/1930,1990 15/1990 15/1990 15/1990 15/1990 13.5/1805,1880 13.5/1930,1990 13.5/1930,1990
56 56 56 45 45 45 45 45 45 52 52 50 50 52 52 52 52 52 45 45 0.70 0.70 0.70 0.97 0.97 0.97 0.97 0.97 0.97 0.79 0.79 0.79 0.79
1484/1 1486/1 1484/1 465/1 465A/1 465A/1 465/1 465A/1 465A/1 465/1 465A/1 465/1 465A/1 1486/1 1484/1 1486/1 1484/1 465B/1 465B/1 465C/1
and Reel Packaging Options: a) R1 = 500 units; b) R2 = 2,500 units; c) T1 = 3,000 units; d) T3 = 10,000 units; e) R2 = 1,500 units; f) T1 = 1,000 units; g) R2 = 4,000 units; h) R1 = 1,000 units; i) R3 = 250 units; j) T1 = 500 units; k) R2 = 450 units; l) T1 = 5,000 units; m) R2 = 2,000 units; n) R4 = 100 units; o) R6 = 150 units; p) R5 = 50 units. (37)U = Unmatched; I = Input; I/O = Input/Output. (46)To be introduced: a) 3Q04; b) 4Q04; c) 1Q05
SG100913 SG1009Q42004
RF TRANSISTORS
RF TRANSISTORS
2000 MHz, Class AB (2- CH N- CDMA and W - CDMA) MRF19030LR3(18i) MRF19030LSR3(18i) MRF19045LR3(18i) MRF19045LSR3(18i) MRF6S19060NR1(18a,46c) MRF6S19060NBR1(18a,46c) MRF6S19060MR1(18a,46c) MRF6S19060MBR1(18a,46c) MRF5S19060NR1(18a) MRF5S19060NBR1(18a) MRF5S19060MR1(18a) MRF5S19060MBR1(18a) MRF19060R3(18i) MRF19060SR3(18i) MRF19085R3(18i) MRF19085LR3(18i) MRF19085SR3(18i) MRF19085LSR3(18i) MRF5S19090HR3(18i) MRF5S19090HSR3(18i)
(18)Tape
I/O I/O I/O I/O I/O I/O I/O I/O I/O I/O I/O I/O I/O I/O I/O I/O I/O I/O I/O I/O
19301990 19301990 19301990 19301990 19301990 19301990 19301990 19301990 19301990 19301990 19301990 19301990 19301990 19301990 19301990 19301990 19301990 19301990 19301990 19301990
30 PEP 30 PEP 9.5 AVG 9.5 AVG 12 AVG 12 AVG 12 AVG 12 AVG 12 AVG 12 AVG 12 AVG 12 AVG 60 PEP 60 PEP 18 AVG 18 AVG 18 AVG 18 AVG 18 AVG 18 AVG
2Tone 2Tone NCDMA NCDMA NCDMA NCDMA NCDMA NCDMA NCDMA NCDMA NCDMA NCDMA 2Tone 2Tone NCDMA NCDMA NCDMA NCDMA NCDMA NCDMA
26 26 26 26 28 28 28 28 28 28 28 28 26 26 26 26 26 26 28 28
13/1990 13/1990 14.5/1990 14.5/1990 15/1990 15/1990 15/1990 15/1990 14/1990 14/1990 14/1990 14/1990 12.5/1990 12.5/1990 13/1990 13/1990 13/1990 13/1990 14.5/1990 14.5/1990
36 36 23.5 23.5 26 26 26 26 23 23 23 23 36 36 23 23 23 23 25.8 25.8
2.1 2.1 1.65 1.65
465E/1 465F/1 465E/1 465F/1 1486/1 1484/1 1486/1 1484/1
0.80 0.80 0.80 0.80 0.97 0.97 0.79 0.79 0.79 0.79 0.66 0.66
1486/1 1484/1 1486/1 1484/1 465/1 465A/1 465/1 465/1 465A/1 465A/1 465/1 465A/1
SG100914 SG1009Q42004
2000 MHz, Class AB (2- CH N- CDMA and W - CDMA) (continued) MRF19090R3(18i) MRF19090SR3(18i) MRF6S19100NR1(18a,46c) MRF6S19100NBR1(18a,46c) MRF6S19100MR1(18a,46c) MRF6S19100MBR1(18a,46c) MRF5S19100HR3(18i) MRF5S19100HSR3(18i) MRF6S19100HR3(18i) MRF6S19100HSR3(18i) MRF19125R3(18i) MRF19125LR3(18i) MRF5S19130HR3(18i) MRF5S19130HSR3(18i) MRF6S19140H(46b) MRF6S19140HS(46b) MRF5S19150HR3(18i) MRF5S19150HSR3(18i) MRF5P20180R6
(18)Tape
I/O I/O I/O I/O I/O I/O I/O I/O I/O I/O I/O I/O I/O I/O I/O I/O I/O I/O I/O
19301990 19301990 19301990 19301990 19301990 19301990 19301990 19301990 19301990 19301990 19301990 19301990 19301990 19301990 19301990 19301990 19301990 19301990 19301990
90 PEP 90 PEP 22 AVG 22 AVG 22 AVG 22 AVG 22 AVG 22 AVG 22 AVG 22 AVG 24 AVG 24 AVG 26 AVG 26 AVG 29 AVG 29 AVG 32 AVG 32 AVG 38 AVG
2Tone 2Tone NCDMA NCDMA NCDMA NCDMA NCDMA NCDMA NCDMA NCDMA NCDMA NCDMA NCDMA NCDMA NCDMA NCDMA NCDMA NCDMA WCDMA
26 26 28 28 28 28 28 28 28 28 26 26 28 28 28 28 28 28 28
11.5/1990 11.5/1990 14.5/1990 14.5/1990 14.5/1990 14.5/1990 13.9/1990 13.9/1990 16.1/1990 16.1/1990 13.5/1990 13.5/1990 13/1990 13/1990 16/1990 16/1990 14/1990 14/1990 14/1990
35 35 25.5 25.5 25.5 25.5 25.5 25.5 28 28 22 22 25 25 28 28 26 26 26
0.65 0.65
465B/1 465C/1 1486/1 1484/1 1486/1 1484/1
0.64 0.64 0.44 0.44 0.53 0.53 0.40 0.40
465/1 465A/1 465/1 465A/1 465B/1 465B/1 465B/1 465C/1 465B/1 465C/1
0.41 0.41 0.43
465B/1 465C/1 375D/1
SG100915 SG1009Q42004
RF TRANSISTORS
RF TRANSISTORS
2000 MHz, Class A, AB MRF281SR1(18a) MRF281ZR1(18a) MRF282SR1(18a) MRF282ZR1(18a) MRF284LR1(18a) MRF284LSR1(18a) U U U U U U 19302000 19302000 19302000 19302000 19302000 19302000 4 PEP 4 PEP 10 PEP 10 PEP 30 PEP 30 PEP 2Tone 2Tone 2Tone 2Tone 2Tone 2Tone 26 26 26 26 26 26 12.5/2000 12.5/2000 11.5/2000 11.5/2000 10.5/2000 10.5/2000 33 33 28(min) 28(min) 35 35 5.74 5.74 4.2 4.2 2.0 2.0 458B/1 458C/1 458B/1 458C/1 360B/1 360C/1
2200 MHz, Class AB (2- CH W - CDMA, UMTS) MRF21010LR1(18a) MRF21010LSR1(18a) MRF21030LR3(18i) MRF21030LSR3(18i) MRF21045LR3(18i) MRF21045LSR3(18i) MRF6S21060NR1(18a,46c) MRF6S21060NBR1(18a,46c) MRF6S21060MR1(18a,46c) MRF6S21060MBR1(18a,46c) MRF21060R3(18i) MRF21060SR3(18i) MRF21085R3(18i) MRF21085LSR3(18i) MRF21085SR3(18i)
(18)Tape
U U I/O I/O I/O I/O I/O I/O I/O I/O I/O I/O I/O I/O I/O
21102170 21102170 21102170 21102170 21102170 21102170 21102170 21102170 21102170 21102170 21102170 21102170 21102170 21102170 21102170
10 PEP 10 PEP 30 PEP 30 PEP 10 AVG 10 AVG 14 AVG 14 AVG 14 AVG 14 AVG 60 PEP 60 PEP 19 AVG 19 AVG 19 AVG
2Tone 2Tone 2Tone 2Tone WCDMA WCDMA WCDMA WCDMA WCDMA WCDMA 2Tone 2Tone WCDMA WCDMA WCDMA
28 28 28 28 28 28 28 28 28 28 28 28 28 28 28
13.5/2170 13.5/2170 13/2170 13/2170 15/2170 15/2170 15/2170 15/2170 15/2170 15/2170 12.5/2170 12.5/2170 13.6/2170 13.6/2170 13.6/2170
35 35 33 33 23.5 23.5 26 26 26 26 34 34 23 23 23
5.5 5.5 2.1 2.1 1.65 1.65
360B/1 360C/1 465E/1 465F/1 465E/1 465F/1 1486/1 1484/1 1486/1 1484/1
1.02 1.02 0.78 0.78 0.78
465/1 465A/1 465/1 465A/1 465A/1
SG100916 SG1009Q42004
2200 MHz, Class AB (2- CH W - CDMA, UMTS) (continued) MRF21090R3(18i) MRF21090SR3(18i) MRF5S21090HR3(18i) MRF5S21090HSR3(18i) MRF6S21100NR1(18a,46b) MRF6S21100NBR1(18a,46b) MRF6S21100MR1(18a,46b) MRF6S21100MBR1(18a,46b) MRF5S21100HR3(18i) MRF5S21100HSR3(18i) MRF6S21100HR3(18i) MRF6S21100HSR3(18i) MRF21120R6(3,18o) MRF21125R3(18i) MRF21125SR3(18i) MRF5S21130HR3(18i) MRF5S21130HSR3(18i) MRF6S21140HR3(18i) MRF6S21140HSR3(18i)
(3)Internal Impedance Matched Push-Pull (18)Tape and Reel Packaging Options: a) R1
I/O I/O I/O I/O I/O I/O I/O I/O I/O I/O I/O I/O I/O I/O I/O I/O I/O I/O I/O
21102170 21102170 21102170 21102170 21102170 21102170 21102170 21102170 21102170 21102170 21102170 21102170 21102170 21102170 21102170 21102170 21102170 21102170 21102170
90 PEP 90 PEP 19 AVG 19 AVG 23 AVG 23 AVG 23 AVG 23 AVG 23 AVG 23 AVG 23 AVG 23 AVG 120 PEP 20 AVG 20 AVG 28 AVG 28 AVG 30 AVG 30 AVG
2Tone 2Tone WCDMA WCDMA WCDMA WCDMA WCDMA WCDMA WCDMA WCDMA WCDMA WCDMA 2Tone WCDMA WCDMA WCDMA WCDMA WCDMA WCDMA
28 28 28 28 28 28 28 28 28 28 28 28 28 28 28 28 28 28 28
11.7/2170 11.7/2170 14.5/2170 14.5/2170 14.5/2170 14.5/2170 14.5/2170 14.5/2170 13.5/2170 13.5/2170 15.9/2170 15.9/2170 11.4/2170 13/2170 13/2170 13.5/2170 13.5/2170 15.5/2170 15.5/2170
33 33 26 26 25.5 25.5 25.5 25.5 26 26 27.6 27.6 34.5 18 18 26 26 27.5 27.5
0.65 0.65 0.65 0.65
465B/1 465C/1 465/1 465A/1 1486/1 1484/1 1486/1 1484/1
0.57 0.57 0.45 0.45 0.45 0.53 0.53 0.44 0.44 0.35 0.35
465/1 465A/1 465/1 465A/1 375D/1 465B/1 465C/1 465B/1 465C/1 465B/1 465C/1
Transistors = 500 units; b) R2 = 2,500 units; c) T1 = 3,000 units; d) T3 = 10,000 units; e) R2 = 1,500 units; f) T1 = 1,000 units; g) R2 = 4,000 units; h) R1 = 1,000 units; i) R3 = 250 units; j) T1 = 500 units; k) R2 = 450 units; l) T1 = 5,000 units; m) R2 = 2,000 units; n) R4 = 100 units; o) R6 = 150 units; p) R5 = 50 units. (37)U = Unmatched; I = Input; I/O = Input/Output. (46)To be introduced: a) 3Q04; b) 4Q04; c) 1Q05 New Product
SG100917 SG1009Q42004
RF TRANSISTORS
RF TRANSISTORS
2200 MHz, Class AB (2- CH W - CDMA, UMTS) (continued) MRF5S21150R3(18i) MRF5S21150SR3(18i) MRF5P21180HR6(18o) MRF21180R6(3,18o) MRF6P21190HR6(18a) MRF5P21240R6(18o) I/O I/O I/O I/O I/O I/O 21102170 21102170 21102170 21102170 21102170 21102170 33 AVG 33 AVG 38 AVG 38 AVG 44 AVG 52 AVG WCDMA WCDMA WCDMA WCDMA WCDMA WCDMA 28 28 28 28 28 28 12.5/2170 12.5/2170 14/2170 12.1/2170 15.5/2170 13/2170 25 25 25.5 22 26.5 24 0.47 0.47 0.31 0.46 0.25 0.35 465B/1 465C/1 375D/1 375D/1 375D/1 375D/1
MMDS
To 2700 MHz
2600- 2700 MHz, Class AB MRF6S27085HR3(18i,46b) MRF6S27085HSR3(18i,46b) MRF6P27160HR6(18o,46b)

(18)Tape
I/O I/O I/O
26002700 26002700 26002700
20 AVG 20 AVG 35 AVG
NCDMA NCDMA NCDMA
28 28 28
15.5/2655 15.5/2655 15/2655
24.5 24.5 22
465/1 465A/1 375D/1
SG100918 SG1009Q42004
RF POWER GaAs TRANSISTORS

Freescale Semiconductor power GaAs transistors are made using an InGaAs PHEMT epitaxial structure for superior RF efficiency and linearity. The FETs listed in this section are designed for operation in base station infrastructure RF power amplifiers and are grouped according to frequency range and type of application. Parts are listed first by order of operating voltage, then by increasing output power.
Linear Transistors
Product
To 6000 MHz
Frequency Band(37) MHz Pout (Typ)/Freq. Watts/MHz Test Signal VDD Volts Gain (Typ)/Freq. dB/MHz Eff. (Typ)/Freq. %/MHz JC C/W Packaging/Style
3500- 6000 MHz, Class AB (WLL, BWA, W- CDMA) MRFG35003MT1(18f) MRFG35003M6T1(18f) MRFG35005MT1(18f) MRFG35010 MRFG35010MT1(18f) MRFG35030R5(18p) U U U U U DC5800 DC5800 DC5800 DC5800 DC5800 34003600 0.3 AVG/ 3550 0.45 AVG/ 3550 0.45 AVG/ 3550 1 AVG/ 3550 0.9 AVG/ 3550 3 AVG/ 3550 WCDMA(44) WCDMA(44) WCDMA(44) WCDMA(44) WCDMA(44) WCDMA(44) 12 6 12 12 12 12 11.5/3550 9/3550 11/3550 10/3550 10/3550 12/3550 25/3550 24/3550 25/3550 30/3550 28/3550 21/3550 1.9 4.8(15) 466/1 466/1 466/1 360D/1 466/1 1490/1
I/O
RF LOW POWER TRANSISTORS

Product Gain Bandwidth f
Typ GHz
NFmin @ f (Typ) dB GHz (Typ) dB
Gain @ f GHz
Maximum Ratings V(BR) CEO Volts 7.0 IC mA
Packaging/Style
IC mA
MBC13900(18c)
15
20
1.0 1.3
1.0 2.0
17 14
1.0 2.0
20
318M/ SOT343 SOT 343
(15)Class A = 5.3 (18)Tape and Reel
Packaging Options: a) R1 = 500 units; b) R2 = 2,500 units; c) T1 = 3,000 units; d) T3 = 10,000 units; e) R2 = 1,500 units; f) T1 = 1,000 units; g) R2 = 4,000 units; h) R1 = 1,000 units; i) R3 = 250 units; j) T1 = 500 units; k) R2 = 450 units; l) T1 = 5,000 units; m) R2 = 2,000 units; n) R4 = 100 units; o) R6 = 150 units; p) R5 = 50 units. (37)U = Unmatched; I = Input; I/O = Input/Output. (44)Peak-to-Average Power Ratio = 8.5 dB New Product
SG100919 SG1009Q42004
RF TRANSISTORS
RF AMPLIFIER ICs AND MODULES

Complete amplifiers with 50 ohm input impedances are available for all popular base station transmitter systems, including GSM and CDMA, covering frequencies from 800 MHz up to 2.2 GHz.
Base Stations
Designed for applications such as macrocell drivers and microcell output stage, these Class AB amplifiers are ideal for base station systems with power requirements up to 30 watts.
Base Station IC Drivers

Product Frequency MHz 746960 746960 746960 860960 860960 8802170 P1dB Watts 15 30 30 15 15 0.85 Gain (Typ) dB 30 30 30 30 30 13 Supply Voltage Volts 26 27 27 26 26 28 Class System Application NCDMA, GSM/GSM EDGE NCDMA, GSM/GSM EDGE NCDMA, GSM/GSM EDGE NCDMA, GSM/GSM EDGE NCDMA, GSM/GSM EDGE NCDMA, WCDMA, GSM/GSM EDGE GSM900 NCDMA, GSM/GSM EDGE NCDMA, GSM/GSM EDGE GSM/GSM EDGE, WCDMA, PHS GSM/GSM EDGE, WCDMA, PHS Die Technology LDMOS LDMOS LDMOS LDMOS LDMOS LDMOS Packaging/Style
MHVIC915R2 (18e) MWIC930R1 (18a) MWIC930GR1 (18a) MW4IC915MBR1 (18a) MW4IC915GMBR1 (18a) MW4IC001MR4 (18n)
AB AB AB AB AB AB
978/ 1329/ 1329A/ 1329/ 1329A/ 466/1
MHVIC910HR2 (18e) MW4IC2020MBR1 (18a) MW4IC2020GMBR1(18a) MW5IC2030MBR1 (18a) MW5IC2030GMBR1 (18a)
921960 18051990 18051990 19301990 19301990
10 20 20 30 30
39 29 29 23 23
26 26 26 27 27
AB AB AB AB AB
LDMOS LDMOS LDMOS LDMOS LDMOS
978/ 1329/ 1329A/ 1329/ 1329A/
(18)Tape
and Reel Packaging Options: a) R1 = 500 units; b) R2 = 2,500 units; c) T1 = 3,000 units; d) T3 = 10,000 units; e) R2 = 1,500 units; f) T1 = 1,000 units; g) R2 = 4,000 units; h) R1 = 1,000 units; i) R3 = 250 units; j) T1 = 500 units; k) R2 = 450 units; l) T1 = 5,000 units; m) R2 = 2,000 units; n) R4 = 100 units; o) R6 = 150 units; p) R5 = 50 units. New Product
SG100920 SG1009Q42004
RF AMPLIFIER ICs AND MODULES (continued) Base Station IC Drivers (continued)

Product Frequency MHz 21102170 21102170 21102170 21102170 P1dB Watts 15 15 30 30 Gain (Typ) dB 34 32 31.5 31.5 Supply Voltage Volts 26 27 28 28 Class System Application WCDMA WCDMA WCDMA WCDMA Die Technology LDMOS LDMOS LDMOS LDMOS Packaging/Style
MHVIC2115R2 (18e) MHVIC2114R2 (18e) MW4IC2230MBR1 (18a) MW4IC2230GMBR1 (18a)
AB AB AB AB
978/ 978/ 1329/ 1329A/
Base Station Module Drivers

Designed for applications such as macrocell drivers and microcell output stage, these Class AB amplifiers are ideal for base station systems with power requirements up to 10 watts.
Product Frequency MHz 18051880 19301990 21102170 P1dB Watts 10 10 10 Gain (Min) dB 24.5 24.5 23.7 Supply Voltage Volts 28 28 28 Class System Application NCDMA PCS1900 WCDMA Die Technology LDMOS LDMOS LDMOS Packaging/Style
MHPA18010 MHPA19010 MHPA21010
AB AB AB
301AP/3 301AP/3 301AP/3
Base Station Module PreDrivers

These 50 ohm amplifiers are recommended for modern multi- tone CDMA, TDMA and UMTS base station pre- driver applications. Their high third- order intercept point, tight phase and gain control, and excellent group delay characteristics make these devices ideal for use in high- power feedforward loops.
Ultra - Linear (for CDMA, W- CDMA, TDMA, Analog) Class A (LDMOS Die) Lateral MOSFETs Product Frequency Band MHz 800925 800960 800960 860900 18001900 VDD (Typ) Volts 28 26 26 28 26 IDD (Typ) mA 770 550 550 500 500 Gain (Typ) dB 31 30.5 30.5 17.5 30 Gain Flatness (Typ) dB .1 .1 .1 .1 .2 P1dB (Typ) dBm 39 34 34 35.5 36 3rd Order Intercept (Typ) dBm 50 47 47 49 46 NF (Typ) dB 3.7 3.5 3.5 3.0 4.2 Packaging/Style
MHL9838 MHL9236 MHL9236M MHL9318 MHL18336

(18)Tape
301AP/1 301AP/1 301AP/2 301AS/1 301AP/1
and Reel Packaging Options: a) R1 = 500 units; b) R2 = 2,500 units; c) T1 = 3,000 units; d) T3 = 10,000 units; e) R2 = 1,500 units; f) T1 = 1,000 units; g) R2 = 4,000 units; h) R1 = 1,000 units; i) R3 = 250 units; j) T1 = 500 units; k) R2 = 450 units; l) T1 = 5,000 units; m) R2 = 2,000 units; n) R4 = 100 units; o) R6 = 150 units; p) R5 = 50 units. New Product
SG100921 SG1009Q42004
RF AMPLIFIER ICs AND MODULES (continued) Base Station Module PreDrivers (continued)
Ultra - Linear (for CDMA, W- CDMA, TDMA, Analog) Class A (LDMOS Die) Lateral MOSFETs (continued) Product Frequency Band MHz 18051880 19002000 19301990 19002000 21102170 VDD (Typ) Volts 26 28 26 26 26 IDD (Typ) mA 1100 500 1000 1400 500 Gain (Typ) dB 28.6 30 29.4 29 31 Gain Flatness (Typ) dB .3 .1 .3 .2 .15 P1dB (Typ) dBm 40 36 40 41 35 3rd Order Intercept (Typ) dBm 50 46 50 49.5 45 NF (Typ) dB 4.2 4.2 4.2 4.2 4.5 Packaging/Style
MHL18926 MHL19338 MHL19926 MHL19936 MHL21336
301AY/1 301AP/1 301AY/1 301AY/1 301AP/1
WLAN POWER AMPLIFIERS

These devices are optimized for wireless LAN (WLAN) applications.
Wireless LAN Power Amplifiers Class AB GaAs HBT Product Frequency Band MHz 24002500 49005900 VCC (Typ) Volts 3.3 3.3 Total Quiescent Current (Typ) mA 156 115 Itotal (Typ)/Pout mA/dBm 210/19 200/18 Gain (Typ)/Pout dB/dBm 27.5/19 24/18 P1dB (Typ) dBm 26.5 25 EVM (Typ)/Pout % rms/dBm 3/19 3/18 Packaging/Style
MMG2401R2 (18e,46a) MMG5004 (9)

(9)In development. (18)Tape and Reel Packaging
1483/ 1483/
Options: a) R1 = 500 units; b) R2 = 2,500 units; c) T1 = 3,000 units; d) T3 = 10,000 units; e) R2 = 1,500 units; f) T1 = 1,000 units; g) R2 = 4,000 units; h) R1 = 1,000 units; i) R3 = 250 units; j) T1 = 500 units; k) R2 = 450 units; l) T1 = 5,000 units; m) R2 = 2,000 units; n) R4 = 100 units; o) R6 = 150 units; p) R5 = 50 units. (46)To be introduced: a) 3Q04; b) 4Q04; c) 1Q05
SG100922 SG1009Q42004
RF GENERAL PURPOSE LINEAR AMPLIFIER ICs AND MODULES

These devices have been optimized for 50 ohm applications and are designed for multipurpose applications where linearity and dynamic range are of primary concern.
General Purpose Linear Amplifier ICs

Product Frequency Band MHz
Class A
InGaP HBT
VCC (Typ) Volts ICC (Typ) mA Gain (Typ) @ 900 MHz dB 20 20 20 15* *@ 2140 MHz P1dB (Typ) @ 900 MHz dBm 18.5 21 24.1 30* *@ 2140 MHz 3rd Order Intercept (Typ) dBm NF (Typ) @ 900 MHz dB 4.1 4.2 4 Packaging/Style
MMG3001NT1 (18f) MMG3002NT1 (18f) MMG3003NT1 (18f) MMG3005(9)
403600 403600 403600 4002400
5.6 5.2 6.2 5
58 110 180 500
32 37.5 40.5 45* *@ 2140 MHz
1514/1 1514/1 1514/1 1543/
General Purpose Linear Amplifier Modules

Product Frequency Band MHz
Class A
VCC (Typ) Volts
Silicon Bipolar
ICC (Typ) mA Gain (Typ) @ 100 MHz dB 34.5 Gain Flatness (Typ) dB P1dB (Typ) @ 200 MHz dBm 28 3rd Order Intercept (Typ) dBm NF (Typ) @ 200 MHz dB 3.8 Packaging/Style
MHW1345
Note: Possible replacement for CA2830C.
(9)In development. (18)Tape and Reel Packaging
10200
24
310
1.0
44
1302/1
Options: a) R1 = 500 units; b) R2 = 2,500 units; c) T1 = 3,000 units; d) T3 = 10,000 units; e) R2 = 1,500 units; f) T1 = 1,000 units; g) R2 = 4,000 units; h) R1 = 1,000 units; i) R3 = 250 units; j) T1 = 500 units; k) R2 = 450 units; l) T1 = 5,000 units; m) R2 = 2,000 units; n) R4 = 100 units; o) R6 = 150 units; p) R5 = 50 units. New Product
RF GENERAL PURPOSE LINEAR AMPLIFIER ICs AND MODULES
SG100923 SG1009Q42004
RF CATV DISTRIBUTION AMPLIFIER MODULES
CATV DISTRIBUTION AMPLIFIER MODULES

Freescale Semiconductor Hybrids are manufactured using the latest generation technology which has set new standards for CATV system performance and reliability. These hybrids have been optimized to provide premium performance in all CATV systems up to 152 channels.
FORWARD AMPLIFIER MODULES 401000 MHz Hybrids, VCC = 24 Vdc, Class A

Product Hybrid Gain (Nom) @ 50 MHz dB Channel Loading Capacity
Silicon Bipolar
Maximum Distortion Specifications Output Level dBmV/CH 2nd Order Test dBc Composite Triple Beat dBc 152 CH Cross Modulation dBc DC Current mA Typ Noise Figure @ 1000 MHz dB Packaging/ Style
152 CH
Max
Preamplifiers MHW9182B MHW9242A 18.5 23.2 152 152 +38 +38 63(40) 61(40) 61 58 61 59 210 318 7.5 8.0 714Y/1 1302/1
40870 MHz High Output Hybrids

Product Hybrid Gain (Nom) @ 870 MHz dB
VCC = 24 Vdc, Class A

Channel Loading Capacity
GaAs
Maximum Distortion Specifications 2nd Order Test dBc Composite Triple Beat dBc 132 CH Cross Modulation dBc DC Current mA Typ Noise Figure @ 870 MHz dB Packaging/ Style
Output Level dBmV/CH
132 CH
Max
Preamplifiers MHW9146 MHW9186 MHW9186A MHW9206 MHW9236 MHW9276 Power Doublers MHW9187 MHW8188A
(34)Composite 2nd (36)Composite 2nd (40)Composite 2nd
14.3 18.5 18.5 20.2 23.8 27.9
132 132 132 132 132 132
+44 +44 +44 +44 +44 +44
60(36) 60(36) 60(36) 59(36) 60(36) 60(36)
60 58 58 57 60 60
55 52 52 51 50 53
245 250 250 245 255 250
5.5 5.0 6.0 4.5 6.5 6.5
1302/1 1302/1 1302/1 1302/1 1302/1 1302/1
20 20.3
132 112
+48 +48
62(34) 64(34)
56 58* *112 CH
55 56* *112 CH
425 425
4.5 4.5 (Typ)
1302/1 1302/1
New Product
Order; Vout = + 48 dBmV/ch Order; Vout = + 44 dBmV/ch Order; Vout = + 38 dBmV/ch
SG100924 SG1009Q42004
FORWARD AMPLIFIER MODULES (continued) 40870 MHz High Output Hybrids VCC = 24 Vdc, Class A
GaAs (continued)
Maximum Distortion Specifications 2nd Order Test dBc Composite Triple Beat dBc 132 CH Cross Modulation dBc 132 CH DC Current mA Typ Noise Figure @ 870 MHz dB Packaging/ Style
Output Level dBmV/CH
Max
Power Doublers (continued) MHW9188 MHW9188A MHW9189(35) MHW9189A MHW8207A MHW9207A MHW8227A MHW9227 MHW9227A MHW8247A MHW9247 MHW9247A MHW8267A MHW9267 MHW9267A
(34)Composite 2nd (35)Mirror image of
20.3 20.3 20.3 20.3 21.3 21.3 22.1 22.1 22.1 24.9 24.9 24.9 27.6 27.6 27.6
132 132 132 132 112 132 112 132 132 112 132 132 112 132 132
+48 +48 +48 +48 +48 +48 +48 +48 +48 +48 +48 +48 +48 +48 +48
62(34) 62(34) 62(34) 62(34) 62(34) 62(34) 64(34) 62(34) 62(34) 62(34) 62(34) 62(34) 62(34) 60(34) 60(34)
56 56 56 56 57* 56 58* 56 56 57* 56 56 57* 56 56 *112 CH
55 55 55 55 55* 55 56* 55 55 55* 54 54 55* 54 54 *112 CH
425 425 425 425 425 425 425 425 425 440 440 440 440 440 440
4.5 5.0 4.5 5.0 4.5 (Typ) 5.0 4.5 (Typ) 4.5 4.5 6.0 (Typ) 7.0 7.0 6.0 (Typ) 7.0 7.0
1302/1 1302/1 1302/2 1302/2 1302/2 1302/2 1302/1 1302/1 1302/1 1302/1 1302/1 1302/1 1302/1 1302/1 1302/1
New Product
Order; Vout = + 48 dBmV/ch MHW9188
SG100925 SG1009Q42004
FORWARD AMPLIFIER MODULES (continued) 40870 MHz High Output MMIC, VCC = 24 Vdc, Class A
GaAs
Maximum Distortion Specifications Output Level dBmV/CH 2nd Order Test dBc Composite Triple Beat dBc 132 CH Cross Modulation dBc 132 CH DC Current mA Typ Noise Figure @ 870 MHz dB Packaging/ Style
Max
Preamplifiers MMG1001R2(18e) Power Doublers MMG2001R2(18e) 21 132 +48 60 54 53 425 4.5 978/ 19 132 +44 58 56 52 250 5.0 978/
40870 MHz Hybrids, VCC = 24 Vdc, Class A

Silicon Bipolar
Maximum Distortion Specifications Output Level dBmV/CH 2nd Order Test dBc Composite Triple Beat dBc 128 CH Cross Modulation dBc 128 CH DC Current mA Typ Noise Figure @ 870 MHz dB Packaging/ Style
Max
Preamplifiers MHW8202B MHW8272A MHW8312 (46b) MHW8342 20.9 27.2 31.3 35.5 128 128 128 132 +38 +38 +40 +44 66(40) 64(40) 53(39) 44(36) 63 64 54 46* *132 CH
(18)Tape
62 62 56 50* *132 CH
220 310 325 325
7.0 7.0 7.0 6.5
1302/1 1302/1 1302/1 1302/1
and Reel Packaging Options: a) R1 = 500 units; b) R2 = 2,500 units; c) T1 = 3,000 units; d) T3 = 10,000 units; e) R2 = 1,500 units; f) T1 = 1,000 units; g) R2 = 4,000 units; h) R1 = 1,000 units; i) R3 = 250 units; j) T1 = 500 units; k) R2 = 450 units; l) T1 = 5,000 units; m) R2 = 2,000 units; n) R4 = 100 units; o) R6 = 150 units; p) R5 = 50 units. (36)Composite 2nd Order; V out = + 44 dBmV/ch (39)Composite 2nd Order; V out = + 40 dBmV/ch (40)Composite 2nd Order; V out = + 38 dBmV/ch (46)To be introduced: a) 3Q04; b) 4Q04; c) 1Q05 New Product
SG100926 SG1009Q42004
FORWARD AMPLIFIER MODULES (continued) 40860 MHz Hybrids, VCC = 24 Vdc, Class A
Silicon Bipolar
Maximum Distortion Specifications Output Level dBmV/CH 2nd Order Test dBc Composite Triple Beat dBc 128 CH Cross Modulation FM = 55 MHz dBc 128 CH DC Current mA Typ Noise Figure @ 860 MHz dB Packaging/ Style
Max
Preamplifiers MHW8182B MHW8222B MHW8242A Power Doublers MHW8185L(21) MHW8185 MHW8205L(22) MHW8205 18.5 18.8 19.5 19.8 128 128 128 128 +40 +40 +40 +40 62(39) 62(39) 60(39) 60(39) 63 64 63 63 64 64 64 64 365 400 365 400 8.5* 8.0 8.5* 8.0 *@ 870 MHz 714Y/1 714Y/1 714Y/1 714Y/1 18.5 21.9 24 128 128 128 +38 +38 +38 64(40) 60(40) 62(40) 66 64 64 65 63 62 220 220 318 7.5 7.0 7.5 714Y/1 1302/1 1302/1

Silicon Bipolar
Max
Preamplifiers MHW7182B MHW7222B MHW7242A 18.5 21.9 24 110 110 110

Vdc = 24 V is 365 mA. Vdc = 24 V is 365 mA.
+40 +40 +40
63(39) 60(39) 62(39)
66 61 63
64 60 61
220 220 318
6.5 6.5 7.0
714Y/1 1302/1 1302/1
(21)Low DC Current Version of MHW8185; Typical I CC @ (22)Low DC Current Version of MHW8205; Typical I CC @ (39)Composite 2nd Order; V = + 40 dBmV/ch out (40)Composite 2nd Order; V = + 38 dBmV/ch out
New Product
SG100927 SG1009Q42004
FORWARD AMPLIFIER MODULES (continued) 40750 MHz Hybrids, VCC = 24 Vdc, Class A
Silicon Bipolar (continued)

Max
Preamplifiers (continued) MHW7272A MHW7292A MHW7312 (46b) MHW7342 27.2 29 31.3 34 110 110 112 112 +40 +40 +42 +44 64(39) 60(39) 55(45) 50(36) 64 60 55* 50 *112 CH Power Doublers MHW7185CL MHW7185C MHW7205CL MHW7205C 18.5 18.8 19.5 19.8 110 110 110 110 +44 +44 +44 +44 64(36) 64(36) 63(36) 63(36) 61 62 61 61 63 63 62 62 370 400 365 400 7.5 7.5 7.5 7.5 714Y/1 714Y/1 714Y/1 714Y/1 60 60 56* 53 *112 CH 310 310 325 325 6.5 6.5* 6.5 6.0 *@ 770 MHz 1302/1 1302/1 1302/1 1302/1

Product Hybrid Gain ( ) (Nom) @ 50 MHz dB
Silicon Bipolar
Maximum Distortion Specifications Output Level dBmV/CH 2nd Order Test dBc Composite Triple Beat dBc Cross Modulation FM = 55 MHz dBc 77 CH DC Current mA Typ T Noise Figure @ 550 MHz dB Packaging/ Style
Channel Loading p y Capacity
Max M 77 CH Forward Amplifiers MHW6342T 34.5 77 +44 57(36) 57 57 310 6.5 1302/1
(36)Composite 2nd Order; V out = + 44 dBmV/ch (39)Composite 2nd Order; V out = + 40 dBmV/ch (45)Composite 2nd order; V out = + 42 dBmV/ch (46)To be introduced: a) 3Q04; b) 4Q04; c) 1Q05
New Product
SG100928 SG1009Q42004
REVERSE AMPLIFIER MODULES 5200 MHz Hybrids, VCC = 24 Vdc, Class A

Product Hybrid Gain (Nom) (N ) @ 10 MHz dB 24 35* *5 MHz
Silicon Bipolar
Channel Loading g Capacity C i Maximum Distortion Specifications Output Level Le el dBmV/CH dB V/CH 2nd Order Test T dBc 72(30) 72(31)* *22 CH Composite Triple Beat p dBc dB 22 CH 68 68 26 CH 67.5(19) 70(19) Cross Modulation dBc 22 CH 61 60 26 CH 61(19) 63(19) 210 325 DC Current C rrent mA A Typ Noise Figure @ 175 MHz dB Packaging/ Style Style
Max 5.0 5.0* *@ 200 MHz 1302/1 1302/1
MHW1244 MHW1346
22, 26 22, 26
+50 +50
Low Current Amplifiers

Product

Hybrid Gain (Nom) (N ) @ 5 MHz dB 22.7 25.5 30.8 Channel Loading g Capacity C it Output Level dBmV/CH dB V/CH
Silicon Bipolar
Maximum Distortion Specifications 2nd Order Test dBc dB 6 CH 10 CH 65 66 65 6 CH 75 75 74 Composite Triple Beat p dBc dB 10 CH 66 66 64 Cross Modulation dBc 6 CH 65 65 64 10 CH 60 61 58 95 95 95 DC Current mA A Typ Noise Figure @ 200 MHz dB Packaging/ Style y
Max 7.0 6.5 5.7 1302/1 1302/1 1302/1
MHW1223LA MHW1253LA MHW1303LA
6,10 6,10 6,10
+50 +50 +50
68 68 68

Product

Hybrid Gain (Nom) (N ) @ 5 MHz dB 35.2 Channel Loading g Capacity C it Output Level dBmV/CH dB V/CH
Silicon Bipolar
Maximum Distortion Specifications 2nd Order Test dBc dB 6 CH 10 CH 65 6 CH 73 Composite Triple Beat p dBc dB 10 CH 62 Cross Modulation dBc 6 CH 63 10 CH 57 95 DC Current mA A Typ Noise Figure @ 150 MHz dB Packaging/ Style y
Max 5.4 1302/1
MHW1353LA
(19)Typical (30)Channels 2 and A @ 7 (31)26 Ch. Composite Second
6,10
+50
68
New Product
Order Test
SG100929 SG1009Q42004
REVERSE AMPLIFIER MODULES (continued) Low Current Amplifiers

Product

Hybrid Gain (Nom) (N ) @ 5 MHz dB 22.7 25.5 30.8 35.2 Channel Loading g Capacity C it Output Level dBmV/CH dB V/CH
Silicon Bipolar
Maximum Distortion Specifications 2nd Order Test dBc dB 6 CH 10 CH 65 66 65 65 6 CH 75 75 74 73 Composite Triple Beat p dBc dB 10 CH 66 66 64 62 Cross Modulation dBc 6 CH 65 65 64 63 10 CH 60 61 58 57 95 95 95 95 DC Current mA A Typ Noise Figure @ 65 MHz dB Packaging/ Style y
Max 7.0 6.5 5.7 5.4 1302/1 1302/1 1302/1 1302/1
MHW1224LA MHW1254LA MHW1304LA MHW1354LA
6,10 6,10 6,10 6,10
+50 +50 +50 +50
68 68 68 68

Product

Hybrid Gain (Nom) (N ) @ 5 MHz dB 25 Channel Loading g Capacity C i Output Level dBmV/CH dB V/CH
Silicon Bipolar
Maximum Distortion Specifications 2nd Order Test T 30) dBc 70 Composite Triple Beat p dBc dB 3 CH 70 Cross Modulation dBc 4 CH 62 115 DC Current mA A Typ Noise Figure @ 50 MHz dB Packaging/ Style y
Max 4.5 1302/1
MHW1254L
(30)Channels 2
+50
and A @ 7
SG100930 SG1009Q42004
RF REFERENCE DESIGNS
RF Power Reference Designs provide: RF Performance Tuned for Specific Standard Broadcast Formats Low Cost Component Selection Complete BOM, Layout, PCB and All Design Information Available Integral Temperature Compensated Bias Circuits Included Extensive RF Characterizations
RF LDMOS MODELS
Freescale Semiconductor continues to populate its LDMOS Model Library with the LDMOS MET models and with the LDMOS Root models. All product models available in the RF LDMOS Model Library (Root and MET) include package, bond wire and internal matching network effects. The MET model for RF LDMOS transistors is a nonlinear model that examines both electrical and thermal phenomena and can account for dynamic selfheating effects of device performance. It is specifically tailored to model high power RF LDMOS transistors used in wireless base station applications. Implemented in the Agilent EEsof EDA Advanced Design System, APLAC Analog Design Tool, Applied Wave Research Microwave Office, and Ansoft Serenade Design Environment and Eagleware GENESYS Microwave and RF Design Suite, the MET LDMOS model is capable of performing smallsignal, largesignal, harmonicbalance, noise and transient simulations. Because of its ability to simulate selfheating effects, the MET model is more accurate than existing models, enabling circuit designers to predict prototype performance more accurately and reduce design cycle time. The current release of the MET LDMOS model is available for these tools: 1. Agilent EEsof ADS (UNIX and PC) nonlinear circuit simulator 2. APLAC Analog Design Tool 3. Applied Wave Research Microwave Office 4. Ansoft Serenade Design Environment 5. Eagleware GENESYS Microwave and RF Design Suite The LDMOS Model Library is available for all major computer platforms supported by these simulators. For more information and latest releases supported, go to http://www.freescale.com/rf/models.
Freescale Semiconductor is pleased to offer applicationspecific reference designs. These applicationspecific reference designs show some of the many possible uses of our high power RF transistors. They provide the customers design engineers with a fast and accurate tool to both evaluate the performance envelope and fully characterize the devices under a variety of different operating conditions. Lowcost component selection was chosen so that the end users could transition the design and its entire Bill of Materials into a high volume base station manufacturing process and still be cost competitive with other competing technologies. The circuit board is made of a recently developed ceramic loaded thermoset plastic woven glass material that offers very low material costs, low PCB fabrication cost, and yet still has an exceptionally low dissipation factor giving low RF loss. The dielectric constant of this material is high enough to allow for compact, distributed element matching structures, yet of a reasonable value to make it relatively insensitive to fabrication and etching variations. The circuits matching and decoupling capacitors utilize a lowcost silicon dioxide dielectric process rather than the traditional porcelain multilayered assemblies, and they offer low ESRs, very high Qs and tight capacitance value tolerances. The reference design data sheet contains a wealth of information that customers can use to better understand the range and capabilities of the Freescale devices. Included on the data sheet are such basics as the intended end use application (GSM, WCDMA, etc.), the typical performance level expected (2% EVM, 40 dBc ACP, etc.) and some device features such as ESD protection and good thermal stability. For more information, go to http://www.freescale.com/rf. Select Tools/Reference Designs.
SG100931 SG1009Q42004
RF DESIGN TOOLS
RF DESIGN TOOLS
RF POWER REFERENCE DESIGN SIMULATIONS

Provides a link between Reference Designs and MET models Example designs exist for a wide selection of Freescale Semiconductor RF high power devices Demonstrates how to design an amplifier using microwave stripline techniques in the Agilent ADS environment Provides realworld" tutorial on how to use nonlinear models Example designs for all major applications: GSM, CDMA, WCDMA, TDMA Models provide examples of CW and 2tone signal simulation Simulation files are provided royaltyfree to allow for reuse and adaptation The device selection and applications are being continually updated Provides feedback path from customers to improve usability and accuracy of models
RF POWER ELECTROMIGRATION MTTF CALCULATION PROGRAM

PROGRAM FUNCTIONALITY
This MTTF/FIT calculator software is designed to assist our customers in estimating the LDMOS device reliability in terms of electromigration wearout failures. The program evaluates LDMOS device MedianTimeToFailure (MTTF) using Blacks Equations. It also estimates the FailuresinTime (FIT) value at the expected base station transceiver system (BTS) life span.
ABOUT THE PROGRAM

This program is designed for estimating LDMOS device electromigration failure rate. According to electromigration theory, there are two wearout modes for silicon components employing aluminum as a metallization material: The formation of an electrically open circuit due to the condensation of vacancies in the aluminum to form voids. The growth of etchpits into silicon by the dissolution of silicon into aluminum (to short out an underlying junction). The program also estimates the FIT value at the expected base BTS life span. The calculation requires input for the drain voltage, drain currents, case temperature, RF input/output power and expected BTS life.
REFERENCE DESIGN SIMULATIONS

In the past, Freescale Semiconductor has provided applicationspecific reference designs that are targeted to provide a predesigned circuit suitable for a specific application. Additionally, Freescale has also provided modeling tools, specifically MET models, to facilitate design using Computer Aided Engineering (CAE) techniques. These two pieces of the puzzle are excellent design tools; however, they are never linked to each other, leaving the customer to figure out the best way to blend the two tools to their advantage. Reference Design Simulations are designed to provide the link between these two tools.
MTTF CALCULATOR AVAILABILITY

RF Power MTTF calculators are being added to the Freescale Semiconductor web site for all RF Power LDMOS discrete transistor and IC devices. A complete RF Power Electromigration MTTF Calculation Program library should be available by the end of 4Q04. Go to http://www.freescale.com/rf and select Tools/Software/Application Software/Calculators.
TOOLS PROVIDED
Reference Design Simulations provide an example application of MET models in a predesigned application circuit. Freescale Semiconductor has taken the time to characterize specific reference design circuits in "software form." The simulations have been chosen to represent a wide selection of RF devices under many of the major communication standards, including GSM, CDMA, WCDMA and TDMA.
LEARNING TOOLS
Reference Design Simulations provide examples of how to use nonlinear models of RF transistors. Specifically, the user will also learn how to design an amplifier using microwave stripline matching techniques. To provide the most accurate modeling results, each simulation provides examples for CW, 2tone and modulated signals, as applicable.
REFERENCE DESIGN SIMULATION AVAILABILITY

The Reference Design Simulation circuits are available as downloadable Agilent ADS projects from the Freescale Semiconductor web site. These simulation files are provided royaltyfree to allow for reuse and adaptation to other application requirements. Go to http://www.freescale.com/rf and select Tools/Software Tools/Reference Design Simulations.
SG100932 SG1009Q42004
RF Front End Integrated Circuit Packaging
(Scale 1:1)
Case 419B (SOT363)
Case 1345 (QFN12)
Case 1383 (7x7 Module)
Case 1404 (SOT343R)
Case 1561 (6x6 Module)
RF/IF Subsystems Packaging
(Scale 1:1)
Case 648 P Suffix (DIP16)
Case 751B D Suffix (SO16)
Case 751D DW Suffix (SO20L)
Case 751G DW Suffix (SO16W)
Case 1311 (QFN32)
Frequency Synthesis Packaging
(Scale 1:1)
Case 648 P Suffix (DIP16)
Case 751B D Suffix (SO16)
Case 751F DW Suffix (SO28L)
Case 751G DW Suffix (SO16W)
Case 948C DT Suffix (TSSOP16)
GPS Subsystem ICs Packaging
(Scale 1:1)
Transmitters and Receivers Packaging
(Scale 1:1)
Case 932 (LQFP48)
Case 751D (SO20WB)
Case 948G (TSSOP14)
Case 977 (LQFP24)
Case 873A (LQFP32)
RF Power Transistors Packaging
(Scale 1:1)
Case 318M (SOT343)
Case 360B Style 1 (NI360)
Case 360C Style 1 (NI360S)
Case 360D Style 1 (NI360HF)
Case 375D Style 1 (NI1230)
Case 375F Style 1 (NI650)
SG100933 SG1009Q42004
PACKAGING
PACKAGING
RF Power Transistors Packaging
(Scale 1:1) (continued)
Case 375G Style 1 (NI860C3)
Case 375H Style 1 (NI860S)
Case 458B Style 1 (NI200S)
Case 458C Style 1 (NI200Z)
Case 465 Style 1 (NI780)
Case 465A Style 1 (NI780S)
Case 465C Style 1 (NI880S)
Case 465D Style 1 (NI600)
Case 465E Style 1 (NI400)
Case 465F Style 1 (NI400S)
Case 466 Style 1 PLASTIC (PLD1.5)
Case 978 PLASTIC (PFP16)
Case 1264 Style 1 PLASTIC (TO2726 Wrap)
Case 1264A Style 1 PLASTIC (TO2726)
Case 1265 Style 1 PLASTIC (TO2702)
Case 1329 Style 1 PLASTIC (TO272 WB16)
Case 1329A Style 1 PLASTIC (TO272 WB16 Gull)
Case 1337 Style 1 PLASTIC (TO2722)
Case 1366 Style 1 PLASTIC (TO2728 Wrap)
Case 1366A Style 1 PLASTIC (TO2728)
Case 1490 Style 1 (HF600)
SG100934 SG1009Q42004
RF Amplifier ICs and Modules Packaging
(Scale 1:1)
Case 301AP Style 1, 2, 3
Case 301AS Style 1
Case 301AW Style 1
Case 301AY Style 1
Case 466 Style 1 PLASTIC (PLD1.5)
Case 978 PLASTIC (PFP16)
Case 1329A Style 1 PLASTIC (TO272 WB16 Gull)
Case 1483 (QFN 3x3) Scale 2:1
RF General Purpose Linear Amplifier Modules Packaging
RF CATV Distribution Amplifiers Packaging
(Scale 1:2)
Case 1302 Style 1 Scale 1:2
Case 1514 Style 1 (SOT89) Scale 2:1
Case 1543 (PQFN 5x5) Scale 2:1
Case 714Y Style 1
Case 1302 Style 1, 2
SG100935 SG1009Q42004
PACKAGING
Whats EOL?
Freescale Semiconductor follows the industry standard EIA724 Product Life Cycle Data Model" to track the life cycle of its product. This model tracks the products life cycle from Product Newly Introduced" to Product Phase Out." Products can be phased for a variety of reasons: improved product performance, change in technology roadmap, process obsolescence, market decline, etc. When products are discontinued, a suggested possible replacement device or an alternative source of supply for discontinued devices are made available when possible. For a list of discontinued devices with possible alternative suppliers, please contact your local Freescale sales office or authorized distributor, or visit the following URL: http://www.motorola.com/rf
Wireless Infrastructure RF Products EOL

For a current EOL listing of Wireless Infrastructure RF products and GPS products, see the product listing below. When available, suggested possible replacement parts are listed.
Product Not Recommended for New Design MHW1224 MHW1304L MRF18090ASR3 MRF19120 MRF19125SR3 End of Life CA2810C CA2830C CA2832C CA901 CA901A CA922 CA922A MHL8018 MHL8115 MHL8118 MHVIC1905R2 MHW1810001 MHW1810002 Past Past Past Past Past Past Past Past Past Past Past Past Past Past Past Past Past Past Past Past MHW6342T MHW6342T None MHW8182B MHW8182B MHW8185 MHW8185 None None None MW4IC2020GMBR1 MW4IC2020MBR1 MW4IC2020MBR1 Last Order Date Last Ship Date Possible Replacement
MHW1224LA MHW1304LA MRF18085ALSR3 MRF5S19130R3 MRF19125LR3 or MRF5S19130SR3
Past Past
Past Past
SG100936 SG1009Q42004
Whats EOL? (continued)

Wireless Infrastructure RF Products EOL (continued)
Product End of Life (continued) MHW1910001 MHW5182A MHW5222A MHW6181 MHW6182 MHW6272 MHW7222A MHW7292 MHW8185LR MHW8185R MHW8205R MHW8292 MHW910 MHW916 MRF1507T1 MRF182 MRF182R1 MRF182LSR1 MRF182SR1 MRF183 MRF183R1 MRF183S MRF183SR1 MRF183LSR1 MRF184R1 MRF184LSR1 Past Past Past Past Past Past Past Past Past Past Past Past Past Past Past Past Past Past Past Past Past Past Past Past Past Past Past Past Past Past Past Past Past Past Past Past Past Past Past Past Past Past Past Past Past Past Past Past Past Past Past Past MW4IC2020MBR1 MHW7182B None MHW7182B MHW7182B MHW7272A MHW7222B None None None None None MHVIC910HR2 None MRF1511T1 or MRF1517T1 MRF9030LR1 MRF9030LR1 MRF9030LSR1 MRF9030LSR1 MRF9045LR1 MRF9045LR1 MRF9045MR1 or MRF9045LSR1 MRF9045MR1 or MRF9045LSR1 MRF9045MR1 or MRF9045LSR1 MRF9060LR1 MRF9060LSR1 or MRF9060MR1 Last Order Date Last Ship Date Possible Replacement
SG100937 SG1009Q42004
Whats EOL? (continued)

Wireless Infrastructure RF Products EOL (continued)
Product End of Life (continued) MRF185 MRF186 MRF187 MRF187S MRF187SR3 MRF1946 MRF1946A MRF18090AS MRF19120S MRF20030R MRF20060R MRF20060RS MRF21120S MRF21180S MRF247 MRF2628 MRF373 MRF373R1 MRF373S MRF184 MRF184SR1 MRF373LSR1 Past Past Past Past Past Past Past Past Past Past Past Past Past Past Past Past MRF9080R3 MRF9120R3 MRF9085R3 MRF9085LSR3 MRF9085LSR3 MRF1535T1 MRF1535T1 MRF18085ALSR3 MRF5S19130SR3 MRF19030LR3 MRF19060R3 MRF19060R3 MRF21120R6 MRF21180R6 or MRF5P21180HR6 MRF1550T1 None MRF373ALR1 MRF373ALR1 MRF373ALSR1 MRF9060LR1 MRF9060LSR1 or MRF9060MR1 MRF373ALSR1 Last Order Date Last Ship Date Possible Replacement
Past Past Past Past
Past Past Past Past
Past Past Past Past Past Past Past Past
Past Past Past Past Past Past Past Past
SG100938 SG1009Q42004
NOTES
SG100939 SG1009Q42004
How to Reach Us:

Home Page: www.freescale.com E-mail: support@freescale.com USA/Europe or Locations Not Listed: Freescale Semiconductor Technical Information Center, CH370 1300 N. Alma School Road Chandler, Arizona 85224 +1-800-521-6274 or +1-480-768-2130 support@freescale.com Europe, Middle East, and Africa: Freescale Halbleiter Deutschland GmbH Technical Information Center Schatzbogen 7 81829 Muenchen, Germany +44 1296 380 456 (English) +46 8 52200080 (English) +49 89 92103 559 (German) +33 1 69 35 48 48 (French) support@freescale.com Japan: Freescale Semiconductor Japan Ltd. Technical Information Center 3-20-1, Minami-Azabu, Minato-ku Tokyo 106-0047, Japan 0120 191014 or +81 3 3440 3569 support.japan@freescale.com Asia/Pacific: Freescale Semiconductor Hong Kong Ltd. Technical Information Center 2 Dai King Street Tai Po Industrial Estate Tai Po, N.T., Hong Kong +800 2666 8080 support.asia@freescale.com For Literature Requests Only: Freescale Semiconductor Literature Distribution Center P.O. Box 5405 Denver, Colorado 80217 1-800-441-2447 or 303-675-2140 Fax: 303-675-2150 LDCForFreescaleSemiconductor@hibbertgroup.com
Information in this document is provided solely to enable system and software implementers to use Freescale Semiconductor products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. Freescale Semiconductor reserves the right to make changes without further notice to any products herein. Freescale Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Freescale Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. Typical parameters that may be provided in Freescale Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals, must be validated for each customer application by customers technical experts.
Freescale Semiconductor does not convey any license under its patent rights nor the rights of others. Freescale Semiconductor products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Freescale Semiconductor product could create a situation where personal injury or death may occur. Should Buyer purchase or use Freescale Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold Freescale Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Freescale Semiconductor was negligent regarding the design or manufacture of the part.
Freescale and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. Freescale Semiconductor, Inc. 2004. All rights reserved. SG1009Q42004 Rev 0 12/2004

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Quarter 4, 2004 SG1009Q42004 Rev 0

Scheduled Introductions for 2004

Whats New! (continued)

FS ONCOREt TINY FORM FACTOR GPS MODULE

EXPANDED PORTFOLIO OF 6TH GENERATION (HV6) RF LDMOS DEVICES

WIRELESS RADIO FREQUENCY PRODUCT

RF FRONT END ICs RFICs Downconverters

Gain Pout/Pin dB (Typ)

36.2 31.8 31.0 32.2 32 30 30

1383/ 7x7 mm Module 1561/ 6x6 mm Module

GSM900, DCS1800, PCS1900

RF BUILDING BLOCKS Amplifiers

419B/ SOT363 1404/ SOT343R

18.5 @ 1575 MHz

1.2 @ 1575 MHz

RF/IF SUBSYSTEMS Transceivers

ZigBee 2.4 GHz ISM 2.4 GHz ISM

1311 (QFN32) 1311 (QFN32)

MISCELLANEOUS FUNCTIONS ADCs/DACs

MC145026 MC145027 MC145028

Encoder Decoder Decoder

Simplex Simplex Simplex

P/648, D/751B P/648, DW/751G P/648, DW/751G

be introduced: a) 3Q04; b) 4Q04; c) 1Q05

FREQUENCY SYNTHESIS Single PLL Synthesizers

MC1451512 MC1451522 MC1451702

20 @ 5.0 V 20 @ 5.0 V 100 @ 3.0 V 185 @ 4.5 V

3.0 to 9.0 3.0 to 9.0 2.7 to 5.5

DW/751F DW/751F P/648, D/751B, DT/948C

GPS SUBSYSTEM ICs Downconverter

FREQUENCY SYNTHESIS GPS SUBSYSTEM ICs

ACCESS AND REMOTE CONTROL

ACCESS AND REMOTE CONTROL Transmitters and Receivers

TAG READER (STARC) FOR IMMOBILIZER APPLICATIONS

32pin LQFP (FA)

RF TRANSISTORS RF HIGH POWER LDMOS TRANSISTORS

Mobile To 520 MHz

55 55 55 55 50(Min) 50(Min) 50(Min) 50(Min) 50(Min) 50(Min) 50(Min) 50(Min)

RF HIGH POWER LDMOS TRANSISTORS (continued) TV Broadcast To 1000 MHz

960 945 945 945 945 945 945 945 945

2Tone 2Tone 2Tone 2Tone 2Tone 2Tone 2Tone 2Tone 2Tone

18/960 20/945 20/945 19/945 19/945 19/945 19/945 18.8/945 18.8/945

12 1.08 1.08 1.9 1.5 0.85 0.85 1.4 1.0

978/ 1337/1 1265/1 360B/1 360C/1 1337/1 1265/1 360B/1 360C/1

RF HIGH POWER LDMOS TRANSISTORS (continued) Cellular To 1000 MHz (continued)

RF HIGH POWER LDMOS TRANSISTORS (continued) Cellular To 1000 MHz (continued)

I/O I/O I/O I/O I/O

18051880 18051880 19301990 19301990 18002000

1Tone 1Tone 1Tone 1Tone 1Tone

14/1805,1880 14/1805,1880 14/1930,1990 14/1930,1990 15/1990

2.1 2.1 2.1 2.1

465E/1 465F/1 465E/1 465F/1 1486/1

36 36 23.5 23.5 26 26 26 26 23 23 23 23 36 36 23 23 23 23 25.8 25.8

2.1 2.1 1.65 1.65

465E/1 465F/1 465E/1 465F/1 1486/1 1484/1 1486/1 1484/1

35 35 25.5 25.5 25.5 25.5 25.5 25.5 28 28 22 22 25 25 28 28 26 26 26

465B/1 465C/1 1486/1 1484/1 1486/1 1484/1

0.64 0.64 0.44 0.44 0.53 0.53 0.40 0.40

0.41 0.41 0.43

465B/1 465C/1 375D/1

5.5 5.5 2.1 2.1 1.65 1.65

1.02 1.02 0.78 0.78 0.78

465/1 465A/1 465/1 465A/1 465A/1