Philips Semiconductors

Product specification

Silicon Diffused Power Transistor

BU508DF

GENERAL DESCRIPTION
High voltage, high-speed switching npn transistors in a fully isolated SOT199 envelope with integrated efficiency diode, primarily for use in horizontal deflection circuits of colour television receivers.

QUICK REFERENCE DATA

SYMBOL VCESM VCEO IC ICM Ptot VCEsat ICsat VF tf PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector saturation current Diode forward voltage Fall time CONDITIONS VBE = 0 V TYP. 4.5 1.6 0.7 MAX. 1500 700 8 15 34 1.0 2.0 UNIT V V A A W V A V s

Ths 25 C IC = 4.5 A; IB = 1.6 A f = 16kHz IF = 4.5 A ICsat = 4.5 A; f = 16kHz

PINNING - SOT199
PIN 1 2 3 base collector emitter DESCRIPTION

PIN CONFIGURATION
case

SYMBOL

c b

case isolated

LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL VCESM VCEO IC ICM IB IBM Ptot Tstg Tj PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Base current (DC) Base current peak value Total power dissipation Storage temperature Junction temperature CONDITIONS VBE = 0 V MIN. -65 MAX. 1500 700 8 15 4 6 34 150 150 UNIT V V A A A A W C C

Ths 25 C

THERMAL RESISTANCES
SYMBOL Rth j-hs Rth j-hs Rth j-a PARAMETER Junction to heatsink Junction to heatsink Junction to ambient CONDITIONS without heatsink compound with heatsink compound in free air TYP. 35 MAX. 3.7 2.8 UNIT K/W K/W K/W

July 1998

Rev 1.200

Philips Semiconductors

Product specification

Silicon Diffused Power Transistor

BU508DF

ISOLATION LIMITING VALUE & CHARACTERISTIC

Ths = 25 C unless otherwise specified SYMBOL Visol PARAMETER Repetitive peak voltage from all three terminals to external heatsink CONDITIONS R.H. 65 % ; clean and dustfree MIN. TYP. MAX. 2500 UNIT V

Cisol

Capacitance from T2 to external f = 1 MHz heatsink

22

pF

STATIC CHARACTERISTICS
Ths = 25 C unless otherwise specified SYMBOL PARAMETER ICES ICES VCEOsust VCEsat VBEsat hFE VF Collector cut-off current
1

CONDITIONS

MIN. 700 6 -

TYP. 13 1.6

MAX. 1.0 2.0 1.0 1.1 30 2.0

UNIT mA mA V V V V

VBE = 0 V; VCE = VCESMmax VBE = 0 V; VCE = VCESMmax; Tj = 125 C Collector-emitter sustaining voltage IB = 0 A; IC = 100 mA; L = 25 mH Collector-emitter saturation voltages IC = 4.5 A; IB = 1.6 A Base-emitter saturation voltage IC = 4.5 A; IB = 2.0 A DC current gain IC = 100 mA; VCE = 5 V Diode forward voltage IF = 4.5 A

DYNAMIC CHARACTERISTICS
Ths = 25 C unless otherwise specified SYMBOL fT CC PARAMETER Transition frequency at f = 5 MHz Collector capacitance at f = 1MHz Switching times (16 kHz line deflection circuit) ts tf Turn-off storage time Turn-off fall time CONDITIONS IC = 0.1 A;VCE = 5 V VCB = 10 V ICsat = 4.5 A;Lc 1 mH;Cfb = 4 nF IB(end) = 1.4 A; LB = 6 H; -VBB = -4 V; -IBM = 2.25 A TYP. 7 125 MAX. UNIT MHz pF

6.5 0.7

s s

1 Measured with half sine-wave voltage (curve tracer).

July 1998

Rev 1.200

Philips Semiconductors

Product specification

Silicon Diffused Power Transistor

BU508DF

TRANSISTOR IC DIODE

ICsat

+ 150 v nominal adjust for ICsat

t

IB

IBend t 20us 26us 64us

1mH

D.U.T. IBend LB 12nF

VCE

-VBB

Fig.1. Switching times waveforms. Fig.3. Switching times test circuit

ICsat 90 % IC
h FE BU508AD

100

10 % tf ts IB IBend
10

t
1 0.1

- IBM

1 IC/A

10

Fig.2. Switching times definitions.

Fig.4. Typical DC current gain. hFE = f (IC) parameter VCE

July 1998

Rev 1.200

Philips Semiconductors

Product specification

Silicon Diffused Power Transistor

BU508DF

1 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1

VCESAT / V

BU508AD

VCESAT/V 10

BU508AD

1 IC = 6A

IC = 4.5A IC = 3A

0.1

IC / A

10

0.1 0.1

IB/A

10

Fig.5. Typical collector-emitter saturation voltage. VCEsat = f (IC); parameter IC/IB

BU508AD

Fig.7. Typical collector-emitter saturation voltage. VCEsat = f (IB); parameter IC

Normalised Power Derating
with heatsink compound

1.4

VBESAT / V

120 110 100 90 80 70 60 50 40 30 20 10 0

PD%

1.2 IC = 6A 1 IC = 4.5A IC = 3A 0.8

0.6

0
0 1 2 3

20

40

60

IB / A

80 Ths / C

100

120

140

Fig.6. Typical base-emitter saturation voltage. VBEsat = f (IB); parameter IC

Fig.8. Normalised power dissipation. PD% = 100PD/PD 25C = f (Ths)

July 1998

Rev 1.200

Philips Semiconductors

Product specification

Silicon Diffused Power Transistor

BU508DF

10

Zth K/W

bu508ax

100
0.5 0.2 0.1 0.05 0.02

IC / A

= 0.01

ICM max 10
P D tp D= tp T t

0.1

tp =

IC max
II
10 us

0.01 0

T
0.001 1.0E-07 1.0E-05 t/s 1E-03 1.0E-01

Ptot max
1.0E+1

100 us

Fig.9. Transient thermal impedance. Zth j-hs = f(t); parameter D = tp/T

I
1 ms

100

IC / A

0.1
10 ms

= 0.01

DC tp =

ICM max 10 IC max

II

0.01
10 us

10

100 VCE / V

1000

Ptot max

Fig.11. Forward bias safe operating area. Ths = 25C I Region of permissible DC operation. II Extension for repetitive pulse operation.
100 us

NB: Mounted without heatsink compound and 30 5 newton force on the centre of the envelope.

1 ms

0.1
10 ms DC

0.01 1 10 100 VCE / V 1000

Fig.10. Forward bias safe operating area. Ths = 25C I Region of permissible DC operation. II Extension for repetitive pulse operation.
NB: Mounted with heatsink compound and 30 5 newton force on the centre of the envelope.

July 1998

Rev 1.200

Philips Semiconductors

Product specification

Silicon Diffused Power Transistor

BU508DF

MECHANICAL DATA
Dimensions in mm Net Mass: 5.5 g

15.3 max 0.7 7.3 3.1 3.3 6.2 5.8 21.5 max 3.2

5.2 max

o 45

seating plane

3.5

3.5 max not tinned

15.7 min 1 2.1 max 2 3 1.2 1.0

5.45

0.7 max 0.4 M 2.0

5.45

Fig.12. SOT199; The seating plane is electrically isolated from all terminals.
Notes 1. Refer to mounting instructions for F-pack envelopes. 2. Epoxy meets UL94 V0 at 1/8".

July 1998

Rev 1.200

Philips Semiconductors

Product specification

Silicon Diffused Power Transistor

BU508DF

DEFINITIONS
Data sheet status Objective specification Product specification Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. Philips Electronics N.V. 1998 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. This data sheet contains target or goal specifications for product development. This data sheet contains final product specifications. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.

July 1998

Rev 1.200