TK6A60D

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS)

TK6A60D
Switching Regulator Applications
Low drain-source ON-resistance: RDS (ON) = 1.0 (typ.) High forward transfer admittance: |Yfs| = 3.0 S (typ.) Low leakage current: IDSS = 10 A (VDS = 600 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm

Absolute Maximum Ratings (Ta = 25C)

Characteristics Drain-source voltage Gate-source voltage DC Drain current (Note 1) Symbol VDSS VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 600 30 6 24 40 173 6 4.0 150 -55 to 150 A W mJ A mJ C C
1: Gate 2: Drain 3: Source

Unit V V

Pulse (t = 1 ms) (Note 1)

Drain power dissipation (Tc = 25C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range

JEDEC JEITA TOSHIBA

SC-67 2-10U1B

Weight : 1.7 g (typ.)

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Thermal Characteristics
2 Characteristics Thermal resistance, channel to case Thermal resistance, channel to ambient Symbol Rth (ch-c) Rth (ch-a) Max 3.125 62.5 Unit C/W C/W 1

Note 1: Ensure that the channel temperature does not exceed 150. Note 2: VDD = 90 V, Tch = 25C (initial), L = 8.4 mH, RG = 25 , IAR = 6 A Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Handle with care.

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Electrical Characteristics (Ta = 25C)
Characteristics Gate leakage current Drain cut-off current Drain-source breakdown voltage Gate threshold voltage Drain-source ON-resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Switching time Rise time Turn-on time Fall time Turn-off time Total gate charge Gate-source charge Gate-drain charge Symbol IGSS IDSS V (BR) DSS Vth RDS (ON) Yfs Ciss Crss Coss tr ton tf toff Qg Qgs Qgd VDD 400 V, VGS = 10 V, ID = 6A Duty 1%, tw = 10 s 10 V VGS 0V 50 ID = 3 A VOUT VDS = 25 V, VGS = 0 V, f = 1 MHz Test Condition VGS = 30 V, VDS = 0 V VDS = 600 V, VGS = 0 V ID = 10 mA, VGS = 0 V VDS = 10 V, ID = 1 mA VGS = 10 V, ID = 3 A VDS = 10 V, ID = 3 A Min 600 2.0 0.8 Typ. 1.0 3.0 800 4 100 20 40 12 60 16 10 6 Max 1 10 4.0 1.25 pF Unit A A V V S

ns

RL = 67 VDD 200 V

nC

Source-Drain Ratings and Characteristics (Ta = 25C)

Characteristics Continuous drain reverse current (Note 1) Pulse drain reverse current Forward voltage (diode) Reverse recovery time Reverse recovery charge (Note 1) Symbol IDR IDRP VDSF trr Qrr Test Condition IDR = 6 A, VGS = 0 V IDR = 6 A, VGS = 0 V, dIDR/dt = 100 A/s Min Typ. 1200 10 Max 6 24 1.7 Unit A A V ns C

Marking

K6A60D

Part No. (or abbreviation code) Lot No. A line indicates Lead(Pb)-Free Finish

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ID VDS
5 COMMON SOURCE Tc = 25C PULSE TEST 10 10 8 7 10

ID VDS
8 COMMON SOURCE Tc = 25C PULSE TEST 7.75 7.5 6 7.25 7 4 6.75

(A)

(A)
6.5 6.25 6 5.75

DRAIN CURRENT ID

DRAIN CURRENT ID

6.75

6.25 2 VGS = 5.5 V

5.5 VGS = 5 V

0 0

10

10

20

30

40

50

DRAIN-SOURCE VOLTAGE

VDS

(V)

DRAIN-SOURCE VOLTAGE

VDS

(V)

ID VGS
COMMON SOURCE VDS = 20 V PULSE TEST

VDS VGS VDS (V)

10 COMMON SOURCE Tc = 25 PULSE TEST

10

(A)

DRAIN CURRENT ID

DRAIN-SOURCE VOLTAGE

ID = 6 A

100 2 25 Tc = 55C 0 0 2 4 6 8 10

1.5

0 0

12

16

20

GATE-SOURCE VOLTAGE

VGS

(V)

GATE-SOURCE VOLTAGE

VGS

(V)

Yfs ID FORWARD TRANSFER ADMITTANCE Yfs (S)

10

RDS (ON) ID
10

Tc = 55C

100 1

25

DRAIN-SOURCE ON RESISTANCE RDS (ON) ()

COMMON SOURCE VDS = 20 V PULSE TEST

VGS = 10 V15 V

COMMON SOURCE Tc = 25C PULSE TEST 0.1 0.1 1 10

0.1 0.1

10

DRAIN CURRENT ID

(A)

DRAIN CURRENT ID

(A)

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RDS (ON) Tc
5

IDR VDS
10

DRAIN-SOURCE ON RESISTANCE RDS (ON) ( )

DRAIN REVERSE CURRENT IDR (A)

COMMON SOURCE VGS = 10 V PULSE TEST

COMMON SOURCE Tc = 25C 5 PULSE TEST 3

3 ID = 6 A 2 3

1 0.5 0.3 10 5 3 0.1 0 0.2 0.4 1 0.6 VGS = 0, 1 V 0.8 1 1.2

1.5 1

0 80

40

40

80

120

160

CASE TEMPERATURE

Tc

(C)

DRAIN-SOURCE VOLTAGE

VDS

(V)

CAPACITANCE VDS
10000 5

Vth Tc

GATE THRESHOLD VOLTAGE Vth (V)

(pF)

1000

Ciss

CAPACITANCE

100

Coss

2 COMMON SOURCE 1 VDS = 10 V ID = 1 mA PULSE TEST 40 0 40 80 120 160

10

1 0.1

COMMON SOURCE VGS = 0 V f = 1 MHz Tc = 25C 1 10

Crss

100

0 80

DRAIN-SOURCE VOLTAGE

VDS

(V)

CASE TEMPERATURE

Tc

(C)

PD Tc VDS (V)
50 500

DYNAMIC INPUT / OUTPUT CHARACTERISTICS (V) GATE-SOURCE VOLTAGE VGS

20 VDS

DRAIN POWER DISSIPATION PD (W)

40

400

16 VDD = 100 V 200

DRAIN-SOURCE VOLTAGE

30

300

12

20

200 VGS 100

400 COMMON SOURCE ID = 6 A Tc = 25C PULSE TEST

10

0 0

40

80

120

160

200

10

15

20

25

0 30

CASE TEMPERATURE

Tc

(C)

TOTAL GATE CHARGE

Qg

(nC)

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rth tw
NORMALIZED TRANSIENT THERMAL IMPEDANCE rth (t)/Rth (ch-c)
10

Duty=0.5 0.2

0.1

0.1 0.05 0.02 SINGLE PULSE PDM t T Duty = t/T Rth (ch-c) = 3.125C/W

0.01 0.01

0.001 10

100

1m

10 m

100 m

10

PULSE WIDTH

tw (s)

SAFE OPERATING AREA

100 ID max (pulsed) * 10 100 s * 200

EAS Tch

ID max (continuous) *

AVALANCHE ENERGY EAS (mJ)

160

(A)

DC operation Tc = 25C

1 ms *

120

ID

DRAIN CURRENT

80

0.1

40

*: SINGLE NONREPETITIVE 0.01 PULSE Tc = 25C CURVES MUST BE DERATED LINEARLY WITH INCREASE IN TEMPERATURE. 1 10

0 25

50

75

100

125

150

CHANNEL TEMPEATURE (INITIAL) Tch(C)

VDSS max 100 1000

0.001

15 V 15 V

BVDSS IAR VDD VDS

DRAIN-SOURCE VOLTAGE

VDS

(V)

TEST CIRCUIT
RG = 25 VDD = 90 V, L = 8.4 mH

WAVEFORM AS = 1 B VDSS L I2 B 2 VDSS VDD

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RESTRICTIONS ON PRODUCT USE

The information contained herein is subject to change without notice.

20070701-EN GENERAL

TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the Handling Guide for Semiconductor Devices, or TOSHIBA Semiconductor Reliability Handbook etc. The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (Unintended Usage). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customers own risk. The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations.

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