Presented by: Sowmya Puranam(E-457) Dipali Sadafule(E-459) Neety Sharma(E-461) Shruthi Shetty( E-463)

INTRODUCTION WORKING OF LED

 LED is essentially a PN junction opto-semiconductor that emits a monochromatic (single color) light when operated in a forward biased direction. LEDs convert electrical energy into light energy. They are frequently used as "pilot" lights in electronic appliances to indicate whether the circuit is closed or not.

The chip has two regions separated by a junction. The p region is dominated by positive electric charges, and the n region is dominated by negative electric charges. The junction acts as a barrier to the flow of electrons between the p and the n regions. Instead of generating heat at the PN junction, light is generated and passes through an opening or lens.

When a voltage is applied and the current starts to flow, electrons in the n region have sufficient energy to move across the junction into the p region.
Each time an electron recombines with a positive charge, electric potential energy is converted into electromagnetic energy. For each recombination of a negative and a positive charge, a quantum of electromagnetic energy is emitted in the form of a photon of light with a frequency characteristic of the semi-conductor material (usually a combination of the chemical elements gallium, arsenic and phosphorus).

The energy (E) of the light emitted by an LED is related to the electric charge (q) of an electron and the voltage (V) required to light the LED by the expression: E = qV Joules. This expression simply says that the voltage is proportional to the electric energy, and is a general statement which applies to any circuit, as well as to LED's. The constant q is the electric charge of a single electron, -1.6 x 10-19 Coulomb.

Carrier confinement: Used to achieve high radiance which yields high quantum efficiency. Optical confinement: preventing absorption of emitted radiation. LED configuration: Homojunction, Single and Double hetrojunction(double-hetrostructure).

Homojunction = a p-n junction made out of two differently doped semiconductors that are of the same material (i.e having the same band gap).
Heterojunction = junction formed between two different band gaps semiconductors. The most effective of this double-hetrostructure device. structure is

The two basic configuration of LED : Surface emitter(Burrus or front emitter):

Plane of active light emitting region is perpendicular to axis of fiber. Active area dimensions: 50 m diameter, upto 2.5 m thick. Emission is isotropic pattern(120 half beam width) called as lambertian pattern. In this the source is equally bright from all directions but power diminishes as a cos.

Fiber Optics
Epoxy Metal contact

n AlGaAs
p GaAs (active region)

p Al GaAs
n+ GaAs

Metal contact

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 Edge

Emitter:

In

edge emitter a double heterostructure band gap engineering is used to achieve carrier confinement and recombination in an active layer but in addition layers of relatively low refractive index are included to produce optical guide. pattern is more directional than surface emitters.

Emission

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Metal contact

GaAs(n) substrate N+- GaAlAs N GaAlAs Active layer n- GaAlAs P GaAlAs P+ GaAlAs n- GaAlAs Metal contact

Light emits from the edge

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The semiconductor bandgap energy defines the energy of the emitted photons in a LED. Semiconductor material used for active layer is must have a direct band gap. In a direct band gap,electrons and holes recombine directly without the use of third particle to conserve momentim. For operation in 800-900nm spectrum ythe principle material used is GaAs1-xPx.

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In the ternary alloy Ga1-xAlx As x is ratio of AlAs to GaAs determines the band gap of alloy and the wavelength of peak emitted radiation.

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drive signal vary the light output level. Three factors which determine the response time :1) doping level in the active region 2) The injected carrier lifetime in the recombination region 3) Parasitic capacitance of the led

Response time or Frequency response: -The optical source indicate how fast an electrical i/p

Modulation bandwidth :It is the point

where the electrical signal power, designated by p(w),has dropped to half its constant value resulting from modulated portion of the optical signal.

The ratio of t he output electrical power at the frequency to the power at zero modulation is Ratio(elec)=10log[p()/p(0)] =10log[I^2()/I^2(0)] When P()=Po/2,then 3-db bandwidth is determined from the ratio of the optical power at frequency to the unmodulated value of the optical power,which is given by Ratio(optical)=10log[p()/p(0)] =10log[I()/I(0)]

SENSOR

ILLMUMINATION

MOBILE

SIGNS & DISPLAYS

LCD BACKLIGHT &

LED SIGNALS

INDICATORS

AUTOMOTIVE

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3rd Ring Road, Beijing-Barco

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Daktronics Time Square

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