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CONTENTS
Introduction Symmetry of relationships Memristor theory How memristance works Crossbar architecture Device structure An Analytical Approach for Memristive Nanoarchitectures Complementary resistive switch Conclusion Reference
INTRODUCTION
The three fundamental passive circuit elements are: Capacitor
Resistor
Inductor
L
q=Cv
Resistors
V v=Ri I
Capacitors
q=Cv
Resistors
V v=d/dt v=Ri i=dq/dt I
Capacitors
q=Cv
=Li
IndInductors
? Q ?
INTRODUCTION
Possible combinations of two variables gives:1. d/dt=V 2. dq/dt=I 1. 2. 3. 4. Other three defines common circuit elements: dv/di=R Resistance d/di=L Inductance dq/dv=C Capacitance d/dq=?
INTRODUCTION
MEMRISTOR which connects and q. Proposed by LEON.O.CHUA in 1971,a professor of electrical engineering at California.
Memristor symbol
Resistors
V v=d/dt v=Ri i=dq/dt I
Capacitors
q=Cv
=Li
Inductors
=Mq Q Memristors
INTRODUCTION
It can remember the current passing through it even after the current has disappeared.
It is a two terminal device whose resistance depends on the magnitude and polarity of the voltage applied to it and the length of time that voltage has been applied.
Analogy: a pipe through which water flows. The material: thin film of Titanium dioxide.
The ability to indefinitely store resistance values means that MEMRISTOR can be used as a nonvolatile memory.
MEMRISTOR THEORY
The memristance function describes the charge-dependent rate of change of flux. M(q)= d /dq
This can be written as: M(q)= (d /dt)/(dq/dt) = v /I Thus M(q) has the unit of resistance.
CROSSBAR ARCHITECTURE
A crossbar architecture is a fully connected mesh of perpendicular wires. Any two crossing wires are connected by switch. To close the switch, a positive voltage is applied across two wires to be connected To open the switch the voltage is reversed.
DEVICE STRUCTURE
Made by sandwiching a thin film of titanium dioxide TiO between two platinum electrodes. Oxidize the surface of the bottom Platinum wire to make an extremely thin layer of platinum dioxide, which is highly conducting. Next assembled a dense film, only one molecule thick, of specially designed switching molecules.
Over this, deposited a 2-3nm layer of titanium metal which bonds strongly to the molecules.
Final layer was the top Platinum electrode.
That is how the memristor remembers how much voltage was last applied.
possible to change the behaviour of the device. A fast and hard current causes it to act as a digital device. A soft and slow current causes it to act as an analog device.
Faster than Flash memory. Innovating nanotechnology due to the fact that it
of two series memristive elements connected with opposing polarities. This structure is referred to as complementary resistive switch (CRS) The unique aspect of this device is in using a series of high resistance states (HRS), RHRS, and low resistance states (LRS), RLRS, to introduce logic 0 and logic 1. As an example, an LRS/HRS combination represents 1 and an HRS/LRS state represents 0.
Working of CRS
For a read operation Vth,set<Vread<Vth,reset
For a write operation Vth,reset<Vwrite Voltage below Vth,set does not alter device state
CONCLUSION
Research are going on for hardware circuit based memristors which emulates brain like function.
It should be also 1000 or million times faster than running program on digital computer.
The first commercial circuit using memristor is to arrive within next three years. Memristor will change circuit design in the 21st century as radically as the transistor changed in the 20th .
CRS array is less affected by the programing and read error rate that limit nanocrossbar array size compared to MEMRISTIVE array
References
L. O. Chua, MemristorThe missing circuit element,
IEEE Trans.Circuit Theory, vol. 18, no. 5, pp. 507519, Sep. 1971. Omid Kavehei, Said Al-Sarawi, Kyoung-Rok Cho, Kamran Eshraghian, An Analytical Approach for Memristive Nanoarchitectures, IEEE Transactions on nanotechnology, vol. 11, no. 2, March 2012 L. Chua, Resistance switching memories are memristors, Appl. Phys.A: Mater. Sci. Process., vol. 102, pp. 765783, 2011. www.spectrum.ieee.org
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