Raman Scattering Studies in AlAs/GaAs/Ge : Polarization Effects

(n-Ge001 0-iscut 1 um n-GaAs 20 nm AlAs : DIFFERENT Carrier Concentration)

Adviser : Ying Sheng, Huang

Student :
Mula Sigiro (D10002801)

Department of Electronic Engineering

Semiconductor Characterization Laboratory (EE- 809)

Sample Information
AlAs n-GaAs n-Ge
20 nm

0 iscut Carrier Concentration : Si-3e18

1 um

AlAs n-GaAs n-Ge

AlAs n-GaAs n-Ge

20 nm

0 iscut Carrier Concentration : Si-1e17

1 um

20 nm

0 iscut

1 um

Carrier Concentration : Si-1e16

Department of Electronic Engineering

Semiconductor Characterization Laboratory (EE- 809)

GB 044: n-Ge001-(0 iscut) - 1 um n-GaAs (Si 3e18) - 20 nm AlAs

3800 3600

Angle : 0

GaAs L-

Raman Intensity (Arb. Units)

3400 3200 GaAsLO 3000 2800 AlAsLO 2600 2400 2200 100 200 300 400
-1

L+

AlAsTO

500

600

Raman Shift (cm )

Department of Electronic Engineering
Semiconductor Characterization Laboratory (EE- 809)

GB 044: n-Ge001-(0 iscut) - 1 um n-GaAs (Si 3e18) - 20 nm AlAs

3800 3600
1850

Angle : 0

Angle: 45

Raman Intensity (Arb. Units)

GaAs L-

1800 1750 1700 1650 1600 1550 1500 1450

Raman Intensity (Arb. Units)

3400 3200 GaAsLO 3000 2800 2600 2400 2200 100 200 300

100

200

300

400
-1

500

600

Raman Shift (cm )

AlAsLO AlAsTO

L+

400
-1

500

600

Raman Shift (cm )

Department of Electronic Engineering
Semiconductor Characterization Laboratory (EE- 809)

3800

Angle: 90

GaAs L-

Raman Intensity (Arb. Units)

3800 3600

Angle : 0

3600

3400

Raman Intensity (Arb. Units)

3200

3400 3200 GaAsLO 3000 2800 2600 2400 2200 100 200 300

3000

2800

2600

2400 100 200 300 400

-1

500

600

Raman Shift (cm )

AlAsLO AlAsTO

L+

400
-1

500

600

Raman Shift (cm )

Department of Electronic Engineering
Semiconductor Characterization Laboratory (EE- 809)

GB 045: n-Ge001-(0 iscut) - 1 um n-GaAs (Si 1e17) - 20 nm AlAs

Angle : 0
3500

800

GaAsLO
Raman Intensity (Arb. Units)
700

Angle : 45

Raman Intensity (Arb. Units)

3000

600

2500

2000

500

1500 GaAsTO

400

100

200

300

400
-1

500

600

1000

AlAsTO

Raman Shift (cm )

AlAsLO

L+

500 100 200 300 400

-1

500

600

Raman Shift (cm )

Department of Electronic Engineering
Semiconductor Characterization Laboratory (EE- 809)

Angle : 0
3500

3500

GaAsLO
Raman Intensity (Arb. Units)
3000

Angle : 90

Raman Intensity (Arb. Units)

3000

2500

2000

2500

1500

2000

1000

1500 GaAsTO

500 100 200 300 400

-1

500

600

1000

AlAsTO

Raman Shift (cm )

AlAsLO

L+

500 100 200 300 400

-1

500

600

Raman Shift (cm )

Department of Electronic Engineering
Semiconductor Characterization Laboratory (EE- 809)

GB 046: n-Ge001-(0 iscut) - 1 um n-GaAs (Si 1e16) - 20 nm AlAs

Angle : 0
4000

GaAsLO
Raman Intensity (Arb. Units)

800

Angle : 45

Raman Intensity (Arb. Units)

700

3000

600

500

2000

400

GaAsTO 1000

100

200

300

400
-1

500

600

AlAsTO AlAsLO

Raman Shift (cm )

L+

100

200

300

400
-1

500

600

Raman Shift (cm )

Department of Electronic Engineering
Semiconductor Characterization Laboratory (EE- 809)

Angle : 0
4000

GaAsLO
Raman Intensity (Arb. Units)

Angle : 90
4000

Raman Intensity (Arb. Units)

3000

3000

2000

1000

2000
0

GaAsTO 1000

100

200

300

400
-1

500

600

Raman Shift (cm )

AlAsTO AlAsLO

L+

100

200

300

400
-1

500

600

Raman Shift (cm )

Department of Electronic Engineering
Semiconductor Characterization Laboratory (EE- 809)

Carrier Concentration : Si-1e17

Angle : 0
3500
0

Carrier Concentration : Si-1e16

Angle : 0
4000
0

GaAsLO

GaAsLO
Raman Intensity (Arb. Units)

Raman Intensity (Arb. Units)

3000

3000

Carrier Concentration : Si-3e18

3800 3600

Angle : 0

2500

GaAs L-

2000

2000

Raman Intensity (Arb. Units)

GaAsTO 1000 AlAsTO AlAsLO

3400 3200 3000 2800

1500 GaAsTO 1000

100 200 300

L+

400
-1

500

600

AlAsTO

Raman Shift (cm )

GaAsLO
500 100 200 300

AlAsLO

L+

400
-1

500

600

Raman Shift (cm )

AlAsLO 2600 2400 2200 100 200 300 400

-1

L+

AlAsTO

500

600

Raman Shift (cm )

Department of Electronic Engineering

Semiconductor Characterization Laboratory (EE- 809)

GB 044: n-Ge001-(0 iscut) - 1 um n-GaAs (Si 3e18) - 20 nm AlAs

2200 2100

Angle: 60

Raman Intensity (Arb. Units)

2000 1900 1800 1700 1600 1500 1400 100 200 300 400
-1

2700

Angle: 30

Raman Intensity (Arb. Units)

2600

500

600

Raman Shift (cm )

2500

2400

2300

100

200

300

400
-1

500

600

Raman Shift (cm )

Department of Electronic Engineering

Semiconductor Characterization Laboratory (EE- 809)

GB 045: n-Ge001-(0 iscut) - 1 um n-GaAs (Si 1e17) - 20 nm AlAs

1600

Angle : 60
1400

1000

Angle : 30

Raman Intensity (Arb. Units)

1200

900

Raman Intensity (Arb. Units)

1000

800

800

700

600

400

600
200 100 200 300 400
-1

500

600

500

Raman Shift (cm )

400

300 100 200 300 400

-1

500

600

Raman Shift (cm )

Department of Electronic Engineering
Semiconductor Characterization Laboratory (EE- 809)

GB 046: n-Ge001-(0 iscut) - 1 um n-GaAs (Si 1e16) - 20 nm AlAs

1400

Angle : 60

1000

900

Raman Intensity (Arb. Units)

Angle : 30

1200

1000

Raman Intensity (Arb. Units)

800

800

700

600

600

400

200

500

100

200

300

400
-1

500

600

Raman Shift (cm )

400

300 100 200 300 400

-1

500

600

Raman Shift (cm )

Department of Electronic Engineering
Semiconductor Characterization Laboratory (EE- 809)

Department of Electronic Engineering

Semiconductor Characterization Laboratory (EE- 809)

Department of Electronic Engineering

Semiconductor Characterization Laboratory (EE- 809)

Department of Electronic Engineering

Semiconductor Characterization Laboratory (EE- 809)

Department of Electronic Engineering

Semiconductor Characterization Laboratory (EE- 809)