solid state electronic materials

electronic structure and band energy

to describe electrons and their electrical properties in a solid

qualitative band model quantitative bond model

Kimia Bahan Semikonduktor 2010 Dr. Indriana Kartini

Band Theory of Solids

Energy Levels

Valence band electrons are the furthest from the nucleus and have higher energy levels than electrons in lower orbits. The region beyond the valence band is called the conduction band. Electrons in the conduction band are easily made to be free electrons.

Isolated Semiconductor Atoms

Silicon and Germanium are electrically neutral; that is, each has the same number of orbiting electrons as protons. Both silicon and germanium have four valence band electrons, and so they are referred to as tetravalent atoms. This is an important characteristic of semiconductor atoms.

Semiconductor Crystals

Tetravalent atoms such as silicon, gallium arsenide, and germanium bond together to form a crystal or crystal lattice. Because of the crystalline structure of semiconductor materials, valence electrons are shared between atoms. This sharing of valence electrons is called covalent bonding. Covalent bonding makes it more difficult for materials to move their electrons into the conduction band.

2 major binding forces:

Binding forces coming from electron-pair bonds (covalent bonding)

For elemental semiconductors: C(diamond), Si and Ge typically around 4 eV in semiconductor device

Ionic bonding/heteropolar bonding

For ionic solids such as the nitride, oxide and halide insulators, and compound semiconductors

 the motion of electrons (1023) in the solids determines the electrical characteristics of the solid state electronic devices and integrated circuit in vacuum, the motion of a few separately objects Newton Law; F = ma classical law of mechanics for solids there is particle density classical law must be extended

in a solid high packing density

in a volume of about 1 cm3, there are 1023 electrons and ions packed in a vacuum tube, there are only 109-1010 electrons consequences in solids:
very small interparticle distances ((1023)-1/3=2.108 cm) high interparticle forces (interacting particles) high interparticle collision (about 1013 per second)

high particle density in solid system condensed matter

current or wave generated in solids resulted from averaged motion of electrons statistical mechanics

Kristal (lattice of ions)

Kristal fotonik (matriks dan bola mempunyai sifat dielektrik yang berbeda) photons scatter in the periodic lattices non-interacting particles berlaku persamaan Maxwell:

e- scatter in the periodic lattices

interacting particles berlaku persamaan Schrodinger: H = E solved approximately

Band Diagram electron standing waves allowed energies bands forbidden energies band-gaps

solved exactly

Band Diagram standing waves allowed frequencies bands forbidden frequencies band-gaps

1 e- atom

quantized energy

discrete energy multielectron system (~ 1023/cm3)

uncertainties with small distances large number of particles

Extrapolation on 1 crystal

allowed bands and forbidden bands

Wave mechanics applied (Schrodinger eqn.) and statistic mechanics Electronic energy levels are arranged in allowed and forbidden bands

results of statistical mechanic analysis at thermodynamic equilibrium give the Fermi-Dirac quantum distribution of the electron kinetic energy in a solid (condensed matter) and Boltzmann classical distribution of electrons and particles in a gas (dilute matter)

1 ELECTRON Math solution to quantum mechanic eqns model 1 electron

energy level of 1 electron ELECTRONIC SOLIDS

energy level of 1 electron

band energy

Applied : Planck eqn. (EMR energy and quantized particle wave) E = h de Broglie eqn. (EMR momentum and particle wave ~ 1/) p = h/

Bands formation

As the two atoms interact overlap the two e- interact

interaction/perturbation in the discrete quantized energy level splitting into two discrete energy levels

allowed band

at r0 : allowed band consists of some discrete energy level

Eg.: System co. 1019 atoms 1e, the width of allowed band energy at r0 = 1 eV if assumed that each eoccupies different energy level and discrete energy level equidistance allowed bands will be separated by 10-19 eV

r0 represents the equilibrium interatomic distance in the crystal The difference of 10-19 eV too small allowed bands to be quasi-continue energy distribution

Bands of atom 3epita energi terbolehkan

As 2 atoms get closer, electron interaction was started from valence electron, n=3

pita energi terlarang

At r0 : 3 allowed bands separated by forbidden were formed

Splitting energi pada atom 14Si 4 elektron valensi 3s2 3p2

Eg represents the width of forbidden band = bandgap energy

3p2 : n=3 l=1

3s2 : n=3 l=0

At reduced distance : 3s and 3p interacted dan overlap 4 quantum state of upper bands (CB) and 4 quantum state of lower bands (VB) 4 valence e- of Si will occupy lower band

Bonding In Metals: Lithium according to Molecular Orbital Theory

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Sodium According to Band Theory

Conduction band: empty 3s antibonding

No gap
Valence band: full 3s bonding

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Magnesium

3s bonding and antibonding should be full

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Magnesium

Conduction band: empty

No gap: conductor Valence band: full

Conductor
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Classification of solids into three types, according to their band structure

insulators: gap = forbidden region between highest filled band (valence band) and lowest empty or partly filled band (conduction band) is very wide, about 3 to 6 eV; semiconductors: gap is small - about 0.1 to 1 eV; conductors: valence band only partially filled, or (if it is filled), the next allowed empty band overlaps with it

Band structure and conductivity

Band gaps of some common semiconductors relative to the optical spectrum

Infrared GaAs InSb Ge Si Visible Ultraviolet TiO2 GaP CdSe CdS SiC ZnS

0 7 53 2

1 1

2 0,5

4 0,35

Eg (eV) (m)

Energy band gap

determines among other things the wavelengths of light that can be absorbed or emitted by the semiconductors
Eg GaAs = 1.43 eV corresponds to light wavelengths in the near infrared (0.87 m) Eg GaP = 2.3 eV green portion of the spectrum

The wide variety of semiconductors band gap tunable wavelength electronic devices
broad range of the IR and visible lights LEDs and lasers

Electron Distribution
Considering the distribution of electrons at two temperatures: Absolute zero - atoms at their lowest energy level. Room temperature - valence electrons have absorbed enough energy to move into the conduction band. Atoms with broken covalent bonds (missing an electron) have a hole present where the electron was. For every electron in the conduction band, there is a hole in the valence band. They are called electron-hole pairs (EPHs). As more energy is applied to a semiconductor, more electrons will move into the conduction band and current will flow more easily through the material. Therefore, the resistance of intrinsic semiconductor materials decreases with increasing temperature. This is a negative temperature coefficient.

If the temperature increases, the valence electrons will gain some thermal energy, and breaks free from the covalent bond It leaves a positively charged hole. In order to break from the covalent bond, a valence electron must gain a minimun energy Eg: Bandgap energy

At 0K, each electron is in its lowest possible energy state, and each covalent bounding position is filled. If a small electric field is applied, the electrons will not move silicon is an insulator

Compound Semiconductor: combination of elements For elemental/intrinsic semiconductor of Si and Ge: the filled valence band of 4 + 4 = 8 electrons For non-intrinsic semiconductor: the filled valence band of 8 electrons constructed by combination of elements of group II-VI and III-V the E for the bandgap will differ from the elemental semiconductors the bandgap will increase as the tendency for the e- to become more localised in atom increases (a function of constituent electronegativities)

Impurities
strongly affects the electronic and optical properties of semiconductor materials
used to vary conductivities from apoor conductor into a good conductor of electric current

may be added in precisely controlled amounts doping

Evaluation of both properties needs prior understanding of the atomic arrangement of atoms in the materials various solids

Empirical relationship between energy gap and electronegativities of the elements

Metallic conductance (Sn) Elemental semiconductors (Si, Ge, etc)

Compound semiconductors (GaAs, CdS, etc.)

Insulators: -Elemental (diamond, C) -Compound (NaCl)

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Impurity and Defect Semiconductor:

Creating band gap through electronegativity effect

P-type

n-type

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Semiconductor Doping
Impurities are added to intrinsic semiconductor materials to improve the electrical properties of the material.
This process is referred to as doping and the resulting material is called extrinsic semiconductor. There are two major classifications of doping materials.
Trivalent - aluminum, gallium, boron Pentavalent - antimony, arsenic, phosphorous

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Kimia Bahan Semikonduktor - Indriana

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Figure 13.29: Effect of doping silicon.

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Energy band model and chemical bond model of dopants in semiconductors

(a) donation of electrons from donor level to conduction band; (b) acceptance of valence band electrons by an acceptor level, and the resulting creation of holes; (c) donor and acceptor atoms in the covalent bonding model of a Si crystal.