Electrical Engineering 2

Lecture 18

Microelectronics 2
Dr. Peter Ewen

(Room G08, SMC; email - pjse)

The Bipolar Junction Transistor (BJT)

emitter

npn (Discrete) Transistor Fabrication 109) emitter (e.g. BC107, 108, collector collector n p nbase p n p emitter base SiO2 epitaxial n-type layer

base

base

10m

200m

n+

n-type wafer

collector

base emitter collector

n p n base emitter base

BJTs should be connected as labelled, otherwise gains and breakdown voltages will be drastically reduced

10m

n+

200m

base is deliberately made thin, ~1

collector

Energy bands for an npn transistor under zero applied bias Fig. 112
emitter n depletion regions base p collector n

Electron Energy

Conduction Band EF

Valence Band

Fig. 113

Energy bands for an npn transistor under normal biasing conditions

emitter n VBE + electrons base p VCB collector n +

Electron Energy

Conduction Band

Valence Band
5

Fig. 114

BJT CARRIER FLOWS

common-base current gain
p-type base n-type collector (lightly doped) |IE|

- emitter efficiency
n-type emitter

IE

|IE|

electrons electrons

IC

(1-)|IE|

holes
base-emitter junction

holes

holes IC = IE + ICBO
collector-base junction

ICBO

IB

VBE +
6

VCB

Fig. 116: Input Characteristic CB Configuration

IE / mA VCB = 25V VCB = 0V

For diode:

dV kT 26 rd dI eI I ( mA )
rd dynamic resistance For BJT:

10
8

Increasing VCB

6
4

dV kT kT re dI eI E eI C
re dynamic emitter resistance For = 1, T = 300 K and IE, IC in mA:

2
0
7

0.2

0.4

0.6

0.8 VBE / V

26 26 re I E IC

I E IC IE / mA VCB = 25V VCB = 0V

INPUT

10
8 6 4 2 0 0 0.2 0.4 0.6 VBE

IE

e b

c IB

IC OUTPUT

VCB
IC(VBE)

TRANSFER CHARACTERISTIC

Transconductance, gm, is slope of transfer characteristic, hence:

0.8 VBE / V

1 gm re

LECTURE 18 BJT CHARACTERISTICS Common base Common emitter Common collector The Early effect

Fig. 117: Output Characteristics VBE CB Configuration

IC / mA
1

IE

e b

c IB

IC IC(VCB) VCB

Active region IC IE, 1

IE = 1.0 mA IE = 0.75 mA IE = 0.50 mA IE = 0.25 mA

Saturation region

0.75 0.5 0.25

Breakdown region

Cutoff region
0 1 2 3 4

ICBO
5

IE = 0 6 7 8 V /V CB

-1

10

COMMON EMITTER CONFIGURATION

IC

Fig. 115 (b)

IB
INPUT VBE
INPUT CHARACTERISTICS

c VCE OUTPUT e

IE
IB(VBE) c b e

IC(VCE) n
p n

OUTPUT CHARACTERISTICS

11

Fig. 118: Input Characteristic CE Configuration

IB / A 10
8

VCE = 5V

VCE = 20V

Increasing VCE

6
4

2
0
12

0.2

0.4

0.6

0.8 VBE / V

IC

Fig. 119: Output Characteristics CE Configuration

IC / mA Saturation region
4

IB VBE

c IC(VCE) VCE e

IE
IB = 40 A
IB = 30 A

Active region

2
1

IB = 20 A IB = 10A

Breakdown region

Cutoff region
0
13

ICEO

IB = 0 15 20 V / V CE

10

COMMON COLLECTOR CONFIGURATION

IE

Fig. 115 (c)

IB
INPUT VCB
INPUT CHARACTERISTICS

e VCE OUTPUT c

IC
IB(VCB)

IE(VCE)

OUTPUT CHARACTERISTICS

14

CC Fig. 121: Output Characteristics CC Configuration

IE / mA Saturation region
4
IB = 30 A 3 IB = 20 A IB = 10A

CE

IE(VCE) IC(VCE) IE IC since 1

IB = 40 A

Active region

Breakdown region

2
1

Cutoff region
0
15

ICEO

IB = 0 15 20 V / V CE

10

Fig. 120: Input Characteristics CC Configuration

IB vs. VCB for different values of VCE
VCE = 5V

0.7V IB VCB b

IE

e
VCE

c IC
VCB VCE 0.7V

IB / A
80
60 40 20

VCE = 10V VCE = 15V

Transistor on VBE 0.7V

As VCB VCE, VBE 0, transistor turns off

0
16

4.3 5

10

15

20 V / V CB

THE EARLY EFFECT, OR BASE-WIDTH MODULATION

depletion regions
emitter base collector

e-b junction

c-b junction

IB VBE +
17

VCB

Effect of bias on width of the depletion region

0

Reverse bias (p-type -ve w.r.t. n-type)

-14

-2 -4 -6 -8

Fig. 55

-12
-10

V VB ++ ++ ++ ++

+
VB+V

Potential

Depletion region widens

VB
18

Distance

Effect of bias on width of the depletion region

0

Forward bias (p-type +ve w.r.t. n-type)

V

0.7 0.6 0.5 0.4

0.1 0.2 0.3

Fig. 55

---

++ + ++

VB n Depletion region narrows

Potential

19

VB VB-V Distance

THE EARLY EFFECT, OR BASE-WIDTH MODULATION

depletion regions
emitter base collector

effective width of base

n
e-b junction

p
c-b junction

IB VBE +
20

VCB=1V =4V =3V =2V =6V =5V

VCB
+

If the effective width of the base decreases:

1. There will be less recombination in the base, so (and hence ) will increase.
= / (1- )
n-type emitter p-type base n-type collector (lightly doped) |IE| electrons (1-)|IE| holes
base-emitter junction

IE

|IE|

electrons

IC

holes

holes IC = IE + ICBO
collector-base junction

ICBO

IB

VBE +
21

VCB

If the effective width of the base decreases: 2. The minority carrier concentration gradient (n/x) will increase: |IE| n/x (x is the basewidth)

so |IE| will increase.

n emitter p base n collector

Electron concentration

|IE|

n x

22

If the effective width of the base decreases: 3. The c-b depletion region may extend all the way over to the e-b junction PUNCH-THROUGH
emitter base collector

n
e-b junction

p
c-b junction

IB VBE +
23

VCB

Fig. 113

Energy bands for an npn transistor under normal biasing conditions

emitter n VBE + electrons base p VCB collector n +

Electron Energy

Conduction Band

Valence Band
24

Fig. 113

Energy bands for an npn transistor under normal biasing conditions

emitter n VBE + electrons base p VCB collector n +

Electron Energy

Conduction Band

Valence Band
25

Fig. 113

Energy bands for an npn transistor under normal biasing conditions

emitter n VBE + electrons base p VCB collector n +

Electron Energy

Conduction Band

Valence Band
26

Fig. 113

Energy bands for an npn transistor under normal biasing conditions

emitter n VBE + electrons base p VCB collector n +

Electron Energy

Conduction Band

Valence Band
27

Early effect implies and |IE| increases as VBE VCB increases, hence IC ( IE )increases IC / mA Active region I C I E 1
Saturation region
0.75 0.5 0.25

IE

e b

c IB

IC IC(VCB) VCB

IE = 1.0 mA IE = 0.75 mA IE = 0.50 mA IE = 0.25 mA

Breakdown region

Cutoff region
0 1 2 3 4

ICBO
5

IE = 0 6 7 8 V /V CB

-1

Common-base output characteristics

28

Saturation region

As VCE increases, VCB increases. Early effect implies , and hence , increases as VCB VBE increases. IC IB, hence IC increases IC / mA Active region IC IB
4 3 2 1

IB

c e IE

IC VCE

IB = 40 A IB = 30 A IB = 20 A IB = 10A

Breakdown region

Cutoff region
0
29

ICEO

IB = 0 15 20 V / V CE

10

Common-emitter output characteristics

IE / mA 10 8 6

VCB = 25V

VCB = 0V

Increasing VCB

Early effect implies |IE| increases as VCB increases.

4
2

0.2

0.4

0.6

0.8 VBE / V

30

Common-base input characteristics

IB / A 10

VCE = 5V

VCE = 20V

8
6

Increasing VCE Early effect implies less recombination in the base as VCB/VCE increases hence IB decreases

4
2

0 0.2 0.4 0.6 0.8 VBE / V Common-emitter input characteristics

31

Summary CB output characteristics are plots of IC vs. VCB: IC = ICBO for IE = 0 IC IE in flat regions IC 0 as VCB goes negative IC increases at large values of VCB due to breakdown at the reverse-biased c-b junction
IC / mA
1

Active region IC IE, 1

IE = 1.0 mA IE = 0.75 mA IE = 0.50 mA IE = 0.25 mA

Saturation region

0.75 0.5 0.25

Breakdown region

Cutoff region
0 1 2 3 4

ICBO
5

IE = 0 6 7 8 V /V CB

32

-1

 Common-emitter configuration Input characteristics (IB vs. VBE) resemble that for a forward-biased diode but depend on output voltage VCE due to Early effect
IB / A 10 8 6 4 2 0
33

VCE = 5V

VCE = 20V

Increasing VCE

0.2

0.4

0.6

0.8 V / V BE

 Output characteristics are plots of IC vs. VCE for different values of the input current IB: IC = ICEO for IB = 0 IC >> IB in flat regions due to current amplification IC increases at large values of VCE due to breakdown at the reverse-biased c-b junction
IC / mA Active region

Saturation region

IB = 40 A IB = 30 A

4 3 2 1 IB = 20 A IB = 10A

Breakdown region

Cutoff region
34

ICEO

IB = 0 15 20 V / V CE

10

 Common-collector configuration Input characteristics (IB vs. VCB) VCB = VCE VBE hence:

If transistor is on VCB is fixed at VCE 0.7V As VCB VCE device turns off, IB 0
IB / A
80 60 40 20 VCE = 5V VCE = 10V VCE = 15V

35

4.3 5

10

15

20 V / V CB

 Output characteristics are plots of IE vs. VCE for different values of IB Since IE IC, CC output characteristics are essentially the same as those for CE
THE EARLY EFFECT, OR BASE-WIDTH MODULATION
depletion regions
emitter base collector

effective width of base

n
e- b junction

p
c- b junction

IB VBE +
36

VCB=6V
VCB +