Documente Academic
Documente Profesional
Documente Cultură
JYOTI YADAV
Required Book
D.A.Pucknell, K.Eshraghian, Basic VLSI Design, Neil H.E. Weste and Kamran Eshraghian; Principles of CMOS VLSI Design Pratima Manhas by Katraia & Sons
History
Levels of Integration
MSI: - (100-1000)
Example: counters
LSI: - (1000-20000)
Example: 8-bit chip
VLSI: - (20000-1000000)
Example: 16 & 32 bit up
ULSI: - (1000000-10000000)
Example: Special processors, virtual reality machines, smart sensors.
Moores Law
Number of transistors embedded on the chip doubles after every one and a half years. Transistors become smaller, faster, consume less power, and are cheaper to manufacture No other technology has grown so fast so long
GaAs technology is better but still it is not used because of growing difficulties of GaAs crystal CMOS looks to be a better option compared to nMOS since it consumes a lesser power. BiCMOS technology is also used in places where high driving capability is required and from the graph it confirms that, BiCMOS consumes more power compared to CMOS
Silicon Lattice
Silicon is a semiconductor Transistors are built on a silicon substrate Silicon is a Group IV material Forms crystal lattice with bonds to four neighbors
Dopants
Pure silicon has no free carriers and conducts poorly Adding dopants increases the conductivity Group V: extra electron (n-type) Group III: missing electron, called hole (ptype)
CONT..
The phenomenon used to control the current in a semiconductor, by applying an electric field perpendicular to the surface is called the field effect. The basic transistor principle is that the voltage between two terminals controls the current through the third terminal.
Comparison
Sl No BJT 1 It is a Bipolar Device 2 3 4 5 6 7 8 Current control Device MOSFET It is majority carrier Device Voltage control Device.
So used in high power applications. Used in low power applications. BJTs have high voltage and current ratings. Switching frequency is lower than MOSFET. MOSFETs have less voltage and current ratings.
Type
nMOS pMOS
Mode
Enhancement mode transistor Going to form after giving a proper positive gate voltage Depletion mode transistor Channel will be present by the implant. Can be removed by giving a proper negative gate voltage
Cont..
When a larger positive voltage is applied to the gate, the magnitude of the induced electric field increases. Minority carrier electrons are attracted to the oxide semiconductor interface, as shown in Figure. This region of minority carrier electrons is called an electron inversion layer.
Cont..
When a larger negative voltage is applied, a region of positive charge is created at the oxide-semiconductor interface, as shown in Figure. This region of minority carrier holes is called a hole inversion layer.
Cont..
The term enhancement mode means that a voltage must be applied to the gate to create an inversion layer. For the MOS capacitor with a p-type substrate, a positive gate voltage must be applied to create the electron inversion layer; for the MOS capacitor with an n-type substrate, a negative gate voltage must be applied to create the hole inversion layer.
Cont..
Figure shows a simplified cross section of a MOS field-effect transistor. The gate, oxide, and p-type substrate regions are the same as those of a MOS capacitor. In addition, we now have two n-regions, called the source terminal and drain terminal. The current in a MOSFET is the result of the flow of charge in the inversion layer, also called the channel region, adjacent to the oxide semiconductor interface.
With zero bias applied to the gate, the source and drain terminals are separated by the p-region, as shown in Figure. The current in this case is essentially zero. If a large enough positive gate voltage is applied, an electron inversion layer is created at the oxidesemiconductor interface and this layer connects the n-source to the n-drain, as
A current can then be generated between the source and drain terminals. Since a voltage must be applied to the gate to create the inversion charge, this transistor is called an enhancement-mode MOSFET. Also, since the carriers in the inversion layer are electrons, this device is also called an nchannel MOSFET (NMOS).
Cont..
The source terminal supplies carriers that flow through the channel, and the drain terminal allows the carriers to drain from the channel. For the n-channel MOSFET, electrons flow from the source to the drain with an applied drain-tosource voltage. The magnitude of the current is a function of the amount of charge in the inversion layer, which in turn is a function of the applied gate voltage.
nMOS Operation
Body is commonly tied to ground (0 V) When the gate is at a low voltage: P-type body is at low voltage Source-body and drain-body diodes are OFF No current flows, transistor is OFF
pMOS Transistor
Similar, but doping and voltages reversed Body tied to high voltage (VDD) Gate low: transistor ON Gate high: transistor OFF Bubble indicates inverted behavior
Threshold Voltage
To establish the channel between the source and the drain a minimum voltage (Vt) must be applied between gate and source. This minimum voltage is called as Threshold Voltage
Since Vgs > Vt and Vds = 0, Channel is formed but no current flows between drain and source.
Vgs > Vt Vds < Vgs - Vt This region is called the non-saturation Region or linear region where the drain current increases linearly with Vds. When Vds is increased the drain side becomes more reverse biased (hence more depletion region towards the drain end) and the channel starts to pinch. This is called as the pinch off point.
Vgs > Vt Vds > Vgs - Vt Called Saturation Region where the drain current remains almost constant. As the drain voltage is increased further beyond (VgsVt) the pinch off point starts to move from the drain end to the source end. Even if the Vds is increased more and more, the increased voltage gets dropped in the depletion region leading to a constant current. The typical threshold voltage for an enhancement mode transistor is given by Vt = 0.2 * Vdd.