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Dr.

Nasim Zafar
Electronics 1
EEE 231 BS Electrical Engineering
Fall Semester 2012
COMSATS Institute of Information Technology
Virtual campus
Islamabad
Semiconductor device lab.
Kwangwoon
Un i v e r s i t y Semiconductor Devices.
Carrier Transport in Semiconductors

Lecture No: 5

Diffusion of Carriers
Diffusion Processes
Diffusion and Recombination
Continuity Equations
Einstein Relation




Nasim Zafar
Carrier Diffusion:

Introduction:
When excess carriers are created non-uniformly in a semiconductor,
a concentration gradient results due to this non-uniformity of the carrier
densities in the sample. This concentration gradient, for electrons and holes, will
cause a net motion of the charge carriers from the regions of high density to the
regions of low carrier density. This type of carrier motion is called Diffusion and
represents an important charge transport process in semiconductors.
Thus, the charge carriers in a semiconductor diffuse, due to the concentration
gradient by random thermal motion and under going scattering from:
The lattice vibrations and
Ionized Impurity atoms.

Carrier Diffusion:
Introduction:

When excess carriers are created non-uniformly in a semiconductor,
a concentration gradient results due to this non-uniformity of the carrier
densities in the sample. This concentration gradient, for electrons and holes,
will cause a net motion of the charge carriers from the regions of high density
to the regions of low carrier density.

This type of carrier motion is called Diffusion and represents an important
charge transport process in semiconductors.

Carrier Diffusion:
Introduction:
Thus, the charge carriers in a semiconductor diffuse, due to
the concentration gradient by random thermal motion and
under going scattering from:
The lattice vibrations and
Ionized Impurity atoms.

Carrier Diffusion:

How can we produce a concentration gradient in a semiconductor?

By making a semiconductor or metal contact.

By illuminating a portion of the semiconductor with light, (next slide).

As the carriers diffuse, a diffusion current flows. The force behind the
diffusion current is due to the random thermal motion of the carriers.
1 dn dP
dx kT dx
=

Photo Generation and Diffusion:
Current mechanisms
Drift Current
Diffusion Current
1
P nkT
dP dn
kT
dx dx
dn dP
dx kT dx
=
=
=
photons
Contact with a metal
Photo Generation and Diffusion:
By shining light, electron-hole pairs can be produced when the photon
energy>E
g.


The increased number of electron-hole pairs will move toward the lower
concentration region, until they reach their equilibrium values.

So there is a net number of the charge carriers crossing per unit area per
unit time, which is called flux.
Units: [Flux] =m
-2
S
-1








Diffusion Flux :
Ficks first law

Diffusion Flux Concentration Gradient dn/dx
n
dn
Flux D
dx
=
[Flux] =m
-2
S
-1
D =v
th
l , [ D] =m
2
/S
D measures the ease of carrier diffusion in
response to a concentration gradient.

D limited by vibrations of lattice atoms and
ionized dopant impurities.
Diffusion Flux :
For Electrons:
F
n
= - D
n
dn/dx

For Holes:
F
p
= - D
p
dp/dx

D
n

= electron diffusion coefficient


D
p
= hole diffusion coefficient


Einstein Relationship:
Einstein relation relates the two independent current mechanicms of
mobility with diffusion D.

n
= qt
n
/m
n
*
D
n
= kTt
n
/m
n
*
m*v
2
= kT
D
n
= v
2
t
n
= l
2
/t
n


Einstein Relation:
p
n
n p
D
D kT kT
and for electrons and holes
q q
= =
Constant value at a fixed temperature
( )( )
2
2
/
sec
sec
J K K
cm kT
volt volt
cm V q C
= = =

25
kT
mV at room temperature
q
=


Diffusion Current Density: J

Diffusion current density = charge x carrier flux



Total Current:
Diffusion Current within a semiconductor consists of:

i. hole component and
ii. electron component

Total Current flowing in a semiconductor is the sum of:

i. drift current and
ii. diffusion current:

Diffusion Current Densities:
| |
| |
2 1
2
2
,
,
th
n n n
p p p
n p
Flux m s
D l D m s
The current densities for electrons and holes
dn dn
J q D qD for electrons
dx dx
dp dp
J q D qD for holes
dx dx
J A m
v

=
= =
| |
= =
|
\ .
| |
= + =
|
\ .
( ( =

Total Current Density:
When both electric field and the concentration gradient are
present, the total current density, for the electron, is given as:

n n n
p p p
total n p
dn
J q nE qD
dx
dp
J q pE qD
dx
J J J

= +
=
= +
Summary

Current flowing in a semiconductor consists of drift and
diffusion components:



Mobility and Conductivity are highly temperature dependent.

Generation and Recombination processes were discussed.
Nasim Zafar 18

dx
dp
qD
dx
dn
qD E qn E qp J
p n n p tot
+ + =
19
Resistivity formula
x
n
qD qn J J J
x
p
qD qp J J J
d
d
d
d
) (
n diff | n drift | n n
p diff | p drift | p p
+ = + =
+ = + =
E
E
J = J
n
+ J
p

n p
1
+
=
qn qp
( )E p n q J J J
p n drift | p
drift | n
drift
+ = + =
x
p
qD J
x
n
qD J
d
d
and
d
d
p
diff | p
n
diff | n
= =
Drift current density
Diffusion current density
Total hole and electron
current density
Total current density
Summary

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