Static characteristics

For the MOSFET to carry drain current, a channel between the drain and the source must be created. This occurs when the gate-to-source voltage exceeds the device threshold voltage VT or VGS(th) or VTH (typically, minimum VTH =2V)

There are three regions of operation: cut-off region where VGS less or equal to VT and ID = 0 pinch-off region or saturation region where VGS > VT and VDS is greater or equal to VGS - VT and current ID is constant linear or constant resistance region where VGS > VT and VDS is less or equal to VGS - VT and the drain current varies in proportion to the drain-source voltage, VDS.

 For switching actions, the power MOSFET is operated in the linear region and cut-off region. In the fully on-state VDS = IDRDS(on) where RDS(on) is termed on-resistance. The corresponding onstate drain-source loss = ID2RDS(on).
The value of RDS(on) can be significant and varies between tens of milliohms and a few ohms for low-voltage and high-voltage MOSFETS, respectively.

MOSFET absolute maximum ratings VDS = drain-source voltage at specified junction temperature. VGS = gate-source voltage, forward and reverse, to avoid dielectric breakdown of gate source capacitor. ID = continuous drain current at specified case temps. IDM = pulsed drain current at specified pulse width and duty cycle MOSFET important parameters include BVDSS = drain-source breakdown voltage VGS(th) = gate threshold voltage RDS (on) = drain-source on state resistance

The insulated gate bipolar transistors (IGBTs)

The symbol

IGBTs Contd
The IGBTs have some of the advantages of the MOSFET, the BJT and the GTO combined. Similar to the MOSFET, the IGBT has a high impedance gate, which requires a small amount of energy to switch the device. Like the BJT, the IGBT has a small on-state voltage even in devices with large blocking voltage ratings (for example, Von is 2 3 V in 1000-V device). Similar to the GTO, IGBT can be designed to block negative voltages.

IGBTs Contd

Insulated gate bipolar transistors have turn-on and turn-off times of the order of 1 s and are available in ratings as large as 1700 V and 1200 A.

Voltage ratings of up to 2 3 kV are projected. The IGBT has become the device of choice in most new applications.

1. State whether the following statements are true or false: (a) Fast recovery diodes have low recovery time. (b) Schottky diodes have high V F but low I R . (c) Snubber circuits are used to protect thyristors against damage by di dt effect. (d) The voltage across a blocking SCR is determined by the external circuit. (e) To properly turn off SCR, it is sufficient to reduce its current to zero. (f) One unit of amplifying-gate SCR consists of two SCRs. (g) If the voltage at the anode of a power diode in circuit is measured to be -10 V with respect to the cathode then the diode is likely to be faulty. (h) If the rate of rise of the forward current of a power diode is high, it may fail. (i) Triacs can be turned on by both positive and negative gate signal. (j) GTO may be turned on soon after it is turned off. (k) SCRs turn off faster than GTOs. (l) For switching actions, the power MOSFET is operated in the saturation and cut-off regions

1. Briefly describe how the following devices are turned on and off: (a) SCR (b) GTO (c) npn BJT 2. What are the conditions (a) for an SCR to turn on? (b) for an SCR to turn off?

3. Draw the device symbol of the following: (a) GTO (b) IGBT (c) n-channel MOSFET (d) npn BJT (e) TRIAC 4. What are the differences between BJTs and IGBTs?

1. A voltage Vs = 100 V is connected to a load consisting of R = 10 ohms in series with L = 15 mH through an SCR. If initial inductor current is zero, what is the minimum time of the SCR gate pulse if the latching current is 20 mA? Express the answer in s. 1. 1 B2 C3 D4

2. (a) What are the following power electronic devices and where would each be used? (i) Fast recovery diodes [2 marks] (ii) General purpose diodes [2 marks] (iii) Asymmetrical SCRs [4 marks] (b) What are the advantages of amplifying gate SCR? [2 marks] 3. (a) What is meant by the following? (iv) Turn-on or forward recovery time of a power diode [2 marks] (v) Turn-off time of an SCR [2 marks] (b) Why would (i) a BJT be used in preference to an SCR? [2 marks] (ii) a MOSFET be used in preference to a BJT? [2 marks] (c) Name two converters in which BTTs replace SCRs. [2 marks]