FACTS and HVDC

2. Static Switches
2
Outline

Power diode
Thyristors
GTOs
Triacs
IGBT

PN junction


- -
- -
-
- -
-
- - -
-
- - - -
- - - -
+ + +
+
+
+
+ + +
+ +
+
+ + + +
+ + + +
p region

Space charge
Region
(depletion region,
potential
barrier region)
n region

Direction of
inner electric field

Diodes
On and off states controlled by the power circuit
Static characteristics of power diode






Turn-off transient Turn- on transient

IF






I
O UTO UF U

I
F
U
F
t
F
t
0
t
rr
t d t
f
t
1
t
2 t
U
R
U R
P
I R
P
d i
F
d t
d i R
d t

U
FP
u
i i
F
u
F
t
fr
t 0
2V
1.3 Half- controlled deviceThyristor

Another name: SCRsilicon controlled rectifier

Thyristor Opened the power electronics era
1956, invention, Bell Laboratories
1957, development of the 1st product, GE
1958, 1st commercialized product, GE
Thyristor replaced vacuum devices in almost every power processing
area.

Still in use in high power situation. Thyristor till has the
highest power-handling capability.
7
Thyristors
Most important type of power semiconductor device.
Have the highest power handling capability. they have a
rating of 5000V / 6000A with switching frequencies ranging
from 1KHz to 20KHz.
8
Thyristors
Is inherently a slow switching device compared to BJT or
MOSFET.
Used as a latching switch that can be turned on by the
control terminal but cannot be turned off by the gate.
9
Thyristors Structure
}
}
}
}
Gate Cathode
J
3
J
2
J
1
Anode
10 cm
17 -3
10 -5 x 10 cm
13 14 -3
10 cm
17 -3
10 cm
19 -3
10 cm
19 -3
10 cm
19 -3
n
+
n
+
p
-
n

p
p
+
10 m
30-100 m
50-1000 m
30-50 m
10
Device Operation



Simplified model of a
thyristor
11
Two Transistor Model of SCR



12
Two Transistor Model of SCR
13
( )
( )
The general transistor equations are,
1
1
C B CBO
C E CBO
E C B
B E CBO
I I I
I I I
I I I
I I I
| |
o
o
= + +
= +
= +
=
14
( ) ( )
1 1
1 1
1 1
1
1
Considering PNP transistor
of the equivalent circuit,
, , ,
,
1 1
E A C C
CBO CBO B B
B A CBO
I I I I
I I I I
I I I
o o
o
= = =
= =
=
15
( ) ( )
2 2 2
2 2
2 2
2
2
Considering NPN transistor
of the equivalent circuit,
, ,
2
C C B B E K A G
C k CBO
C A G CBO
I I I I I I I I
I I I
I I I I
o
o
= = = = +
= +
= + +
16
( )
2 1
2 1 2
1 2
From the equivalent circuit,
we see that
1
C B
g CBO CBO
A
I I
I I I
I
o
o o
=
+ +
=
+
17
( )
1 2
1 2
Case 1: When 0
1
g
CBO CBO
A
I
I I
I
o o
=
+
=
+
( )
2 1 2
1 2
Case 2: When 0
1
G
g CBO CBO
A
I
I I I
I
o
o o
=
+ +
=
+
18
V-I Characteristics
19
Effects of gate current
20
Methods of Thyristor Turn-on
Thermal Turn-on.
Light.
High Voltage.
Gate Current.
dv/dt.
Forward Blocking Mode [V
AK
= +ve & V
G
= 0]
When a positive voltage is applied to anode with
respect to cathode, the junctions J1 and J3 are
forward biased, junction J2 is reverse biased.
The SCR is in Forward Blocking state. At this time the
Gate signal is not applied.
A depletion layer is formed in junction J2 and no
current flows from anode to cathode.
As shown in VI Characteristic, a small amount of
current called forward leakage current flows through
the device.

21
Forward Conducting Mode [V
AK
= +ve & V
G
= +ve]
When the small amount of positive voltage is applied to
gate terminal, while positive voltage is applied to anode
with respect to cathode, the junction J3 becomes forward
biased.
So the SCR acts as a closed switch and conducts a large
value of forward current with small voltage drop.
With the application of gate signal the SCR changed from
forward blocking state to forward conducting state. It is
called as latching.
Without gate signal SCR changed from forward blocking
state to forward conducting state at forward breakdown
voltage (V
fbd
).


22
When the gate signal value is increased, the latching happens
for low V
ak
voltages as mentioned in the figure.
In the presence of forward current (i.e. after the thyristor is
turned on by a suitable gate voltage) it will not turn off even
after the gate voltage has been removed. The thyristor will only
turn off when the forward current drops below holding current.
The holding current is defined as the minimum current required
to hold the SCR in the forward conduction state.
Reverse Blocking Mode [V
AK
= -ve]
When a negative voltage is applied to anode with respect to
cathode, the junctions J1 and J3 are reverse biased, but the
junction J2 is forward biased.
The SCR is in its reverse blocking state. ie, it acts as an open
switch.
As shown in figure a small amount of reverse leakage current
flows through the device

23
Switching characteristics of thyristor

100%
90%
10%
u
AK
t
O
0
t d t r
t
rr
t gr
U RRM
I
RM
i
A
t
Merits of SCR:
SCRs with high voltage and current ratings are available.
On state losses in SCRs are reduced.
Very small amount of gate drive is required since SCR is a
regenerative device.
Demerits of SCR:
Gate has no control after the SCR is turned ON.
External circuits are required to turn OFF the SCR.
Operating frequencies are very low.
Snubber circuits are required for dv/dt protection.
Applications of SCR:
SCRs are used for controlled rectifiers.
FACTS and HVDC
DC motor drives large power supplies and electronic circuit breakers

25
26
Bidirectional Triode Thyristors
(TRIAC)
27
Triac Characteristics
28
Gate Turn-off Thyristors
Turned on by applying positive gate signal.
Turned off by applying negative gate signal.
On state voltage is 3.4V for 550A, 1200V GTO.
Controllable peak on-state current I
TGQ
is the peak
value of on-state current which can be turned-off by
gate control.
Gate-Turn-Off Thyristors (GTO)
Slow switching speeds
Used at very high power levels
Require elaborate gate control circuitry
GTO Turn-Off
Need a turn-off snubber
31
Advantages over SCRs
Elimination of commutating components.
Reduction in acoustic & electromagnetic noise due to
elimination of chokes.
Faster turn-off, therefore can be used for higher
switching frequencies.
Improved efficiency of converters.

32
Advantages over BJTs
Higher voltage blocking capabilities.
High on-state gain.
High ratio of peak surge current to average current.
A pulsed gate signal of short duration only is
required.
33
Disadvantages of GTOs
On-state voltage drop is more.
Due to multi cathode structure higher gate current is
required.
Gate drive circuit losses are more.
Reverse blocking capability is less than its forward
blocking capability.
IGBT
Switching characteristics of IGBT

t
t
t
current tail

UGEM
UGE
90%UGEM
10%UGEM
0
0
0
I CM
I C
90%I CM
10%I CM
UCE
UCEM
UCEon
t on
t
fv1
t off
t
d(on)
t
fv2
t
fi1
t
fi2
t
f
t
r
t
d(off)
IGBT
36
Prof. M. Madhusudhan Rao, E&C Dept., MSRIT
Advantages of IGBT
Combines the advantages of BJT & MOSFET
High input impedance like MOSFET
Voltage controlled device like MOSFET
Simple gate drive, Lower switching loss
Low on state conduction power loss like BJT
Higher current capability & higher switching
speed than a BJT. ( Switching speed lower
than MOSFET)


37
Prof. M. Madhusudhan Rao, E&C Dept., MSRIT
Power Semiconductor Devices, their
Symbols & Characteristics

38
DEVICE SYMBOLS &
CHARACTERISTICS
39
Prof. M. Madhusudhan Rao, E&C Dept., MSRIT
Comparison between different
commonly used Thyristors
Line Commutated Thyristors available up to
6000V, 4500A.
Ex: Converter grade (line commutated) SCR.
V / I rating: 5KV / 5000A
Max. Frequency: 60Hz.
Switching time: 100 to 400 sec.
On state resistance: 0.45 mO.
40
Example of Inverter Grade Thyristor
Ratings
V / I rating: 4500V / 3000A.
Max. Frequency: 20KHz.
Switching time: 20 to 100sec.
On state resistance: 0.5mO.
41
Example of Triac Ratings
Used in heat / light control, ac motor control circuit
V / I rating: 1200V / 300A.
Max. Frequency: 400Hz.
Switching time: 200 to 400sec.
On state resistance: 3.6mO.
42
Example of IGBT Ratings
Used in high voltage / current & high
frequency switching power applications
(Inverters, SMPS).
Example: IGBT 2500V / 2400A.
Max. Frequency: 20KHz.
Switching time: 5 to sec.
On state resistance: 2.3mO.
43
Comparison of Controllable Switches
Summary of Device Capabilities
46
Thank you