CMOS dominant semiconductor technology today due to
very low power dissipation, increased component density and reduced cost.
Classification of CMOS process is by the kind of substrate used n well , p well , twin well.
In CMOS both n channel and p channel MOSFETS are fabricated.
Either n well is created in p substrate or vice versa.
If both types of well are created , this is called twin tub( well) process. n well process Start from p substrate Form n weel region Define p mos and n mos active region Form field and gate oxidation Form ppolysilicon Implant n+ diffusion regions Implant p+ diffusion regions Create contact circuit Metallization
Continu.
Continu. Continu. Continu. Continu. Continu
Continu Continu Advantages of n well over p well process N well is superior to p well because of lower substrate bias effect
Low parasitic capacitance with source and drain
Lower mobility of holes
Disadvantages of n well process Higher power consumption Lower performance Easy latch up Higher cross talk Does not support high system reliability TWIN TUB PROCESS Tub formation Thin Oxide Etching Source and Drain implantation Contact cut Diffusion Metallization TWIN TUB CMOS PROCESS Provides basis for separate optimization of nmos and pmos.
Thus making it possible to analyse the treshold voltage,body effect and channel transconductance of both transistors to be tuned independently.
Starting material is n+ or p+substrate with a lightly doped epitaxial layer on the top. TWIN TUB PROCESS STEPS Starting with n or p substrate Epitaxial layer formation Tub formation Field and gate oxidation Form polysilicon Source and drain implantation Contact cut definition metallization TWIN TUB PROCESS ADVANTAGES Seperately Optimized wells Balanced performance Treshold adjust steps can be seperately done ELECTRON BEAM LITHOGRAPHY[EBL] Used to generate feature size less than1 micro metre. Two types of E beam s/ms E beam pattern generator E beam projection s/m In E beam the energy reuired is provided by the electron. The process is too slow The electrons cause the blurring of the image in the resist. X ray LITHOGRAPHY Similar to optical lithography, where x rays are used instead of uv rays The exposure of the resist is performed by the proximity printing, keeping a gap of 25 to 40 micro metre b/w the wafer and mask. The short wavelength of x- ray reduces diffraction effects leading to high image quality. Feature size upto .1 micro metre can be achieved by lithographic process. Serious issues like aging and mask distortion are faced by this process.