SOI PROCESS

silicon on insulator is also an advance semiconductor technology where silicon

is replaced as a substrate material.
Rather than using silicon as the substrate material, technologists have sought to
use an insulating substrate to improve process characteristics such as speed
and latch-up susceptibility
The SOI CMOS technology allows the creation of independent, completely
isolated nMOS and pMOS transistors virtually side-by side on an insulating
substrate (for example: sapphire).
The main advantages of this technology are the higher integration density
(because of the absence of well regions), complete avoidance of the latch-up
problem, and lower parasitic capacitances compared to the conventional n-well
or twin-tub CMOS processes.
WHY SAPPHIRE
The silicon is usually deposited by the decomposition of silane
gas (SiH4) on heated sapphire substrates.
The advantage of sapphire is that it is an excellent electrical
insulator, preventing stray currents caused by radiation from
spreading to nearby circuit elements
STEPS
The basic SOI process can be explain as follows
A thin film 7-8 micrometer of very lightly doped n type si is
grown over an insulator. Sapphire or sio2 is a commonly used
insulator.
Anisotropic etching is required to etch away the silicon except
where a diffusion area will be needed.

Step 1.Sapphire as an insulator
Step2: place lightly doped silicon (n-) over
sapphire.
After the etching process,
Step3: create P Island and N Island over the lightly doped
silicon

Step3a
p type island is formed by boron implantation by masking
silicon n substrate type
Step3b
n type island is formed by phosphorous implantation by
masking p type island
Step-4
Polysilicon formation
NMOS fabrication
By masking the n type island phosphorous impurities are added to make
NMOS transistor
PMOS Fabrication
By masking the p type island boron impurities are added to make NMOS
transistor

After this it undergoes the process of metallization