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This document describes the simulation process for a Si(100) nanowire field effect transistor (FET). It involves setting up the nanowire geometry, passivating the structure with hydrogen, relaxing the geometry, defining a gate region, calculating transmission spectra at zero gate voltage, and doping the wire to create a p-i-n junction. The methodology includes using density functional theory with a double-zeta polarized basis set, adding calculators for transmission spectrum, electron density difference, and electrostatic potential difference, and running the simulation using a job manager. An example application involves using ultra-thin insulating films on metal substrates to vary the work function through interface effects.
This document describes the simulation process for a Si(100) nanowire field effect transistor (FET). It involves setting up the nanowire geometry, passivating the structure with hydrogen, relaxing the geometry, defining a gate region, calculating transmission spectra at zero gate voltage, and doping the wire to create a p-i-n junction. The methodology includes using density functional theory with a double-zeta polarized basis set, adding calculators for transmission spectrum, electron density difference, and electrostatic potential difference, and running the simulation using a job manager. An example application involves using ultra-thin insulating films on metal substrates to vary the work function through interface effects.
This document describes the simulation process for a Si(100) nanowire field effect transistor (FET). It involves setting up the nanowire geometry, passivating the structure with hydrogen, relaxing the geometry, defining a gate region, calculating transmission spectra at zero gate voltage, and doping the wire to create a p-i-n junction. The methodology includes using density functional theory with a double-zeta polarized basis set, adding calculators for transmission spectrum, electron density difference, and electrostatic potential difference, and running the simulation using a job manager. An example application involves using ultra-thin insulating films on metal substrates to vary the work function through interface effects.
Nanowire building Passivating the structure Relaxing the geometry
Define Gate
Zero gate voltage calculation Doping the wire Setting up the geometry Custom builder
builders
nanowire
Hydrogen passivation of the structure Click the H-Passivator in the left hand toolbar.
Relaxing the geometry DFT with the DoubleZetaPolarized (DZP) basis set is the most accurate method but also the most time consuming one. Defining the Gate Open Miscellaneous Spatial regions 1. Right-click in the white area of the widget to insert a new metallic region.
2. Finally, transform the structure into a device configuration by opening Device Tools Device From Bulk... Zero Gate voltage Calculation We will setup a calculation of the transmission spectrum of a p-doped nanowire at zero gate potential using the Extended Hckel model.
For this purpose: Add a New Calculator. Add Analysis/Transmission Spectrum. Add Analysis/Electron Difference Density. Add Analysis/Electrostatic Difference Potential
Doping the wire Setting up the system as p-i-n junction. Results in the shift in fermi levels of two electrodes. Send the script to the editor using send to
Script is Ready..!!
Run it using Job Manager Example Variation of work function of a metal upon coating with a insulator :
In this ultra-thin films of insulating materials deposited on the metal substrate to vary the work function of metal (to increase or decrease depending on the nature of interface). Working Methodology Following Parameters were set for the simulations :
Grid mesh cutoff : 1000 eV during interface of Pt and AgCl Layers : 3 layers of Pt and 1 layer of AgCl for coating. K-point sampling: 11x11x1 in case of interface Poisson solver : Multigrid Solver ( Neumann condition on left electrode and Dirichlet on right) Surface cleavage : Pt(100)* and AgCl(100)* Exchange Correlation : GGA, PW91
* quantities in braces indicate miller indices
Finding the work-function of the material Ghost Atoms is an atom with basis set but without any pseudopotential core or charge. These are considered to be in vacuum level (as they are placed far in the atomic scale, though being near the surface). As Work Function is the difference in energy between fermi level of an atom and its vacuum level, these ghost atoms brings ease in work function calculation. Simulation Results