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Semiconductor Devices
Tunnel Diode
Varactor Diode
PIN Diode
Symbol
Tunnel Diode
high impurity concentration
• Ordinary diode concentration-1part in
10^8 parts
• Tunnel diode concentration-1part in
10^3 parts
• negative resistance region that allows
very fast switching speeds, up to 5 GHz
• Materials used-Ga and GaAs
Tunneling phenomenon
Width of the junction barrier varies
inversely as the square root of
impurity concentration
Quantum mechanism-Electron
penetrate through the barrier-
tunneling
V-I Characteristics of Tunnel
diode
Very good conductor
in forward bias
Huge current for
small applied voltage
Negative resistance
region
Low resistance device
Varactor Diode
voltage-controlled capacitor
w inversely proportional to C
Forward bias –space charge width
capacitance-varactors, varicaps or
volacaps
Characteristics of Varactor Diode
PIN Diode
Intrinsic layer sandwitched between
P and N regions
Intrinsic layer offers high resistance
Intrinsic layer-advantages
P I N
Characteristics of PIN Diode
Forward Reverse
Silicon Controlled Rectifier
conduction
construction
symbol
SCR working
Apply +ve voltage to anode w.r.t
cathode
J & J –forward biased
1 3
J –reverse biased
2
saturation current
When I <0,Applied voltage increases –
G
ON state
I >0, forward bias voltage applied to
G
control
SCR Characteristics
Two Transistor Analogy
The general transistor equations are,
I C = β I B + ( 1 + β ) ICBO
I C = α I E + I CBO
I E = IC + I B
I B = I E ( 1 − α ) − ICBO
C o n s id e rin g P N P tra n s is to r
o f th e e q u iv a le n t c irc u it,
I E 1 = I, A I C α =I,C1 1 α , =
IC B O = I C1 ,B O I B I=
1 B
∴ I B1 I( A1 α =1 ) I C −B O(1 )
C o n s id e r in g N P N t r a n s is t
o f th e e q u iv a le n t c ir c u it,
IC = 2I,C I B 2I,B = 2I E IK
I C2 = α 2 Ik I+C B O2
I C2 = α 2 ( IA) IG+ I(C2B) O2 +
From the equivalent circuit,
we see that
∴ I C2 =I B1
α 2 I g + I CBO 1 + I CBO 2
⇒ IA =
1 − ( α 1 + α2)
If α + α =1;then I =∞
1 2 A
state
Regenerative characteristics
α + α =1 and proper I
1 2 G
I =I
G cause a flow of I T -ON state
B2 C2 2
I = I ; T
C2 - switched ON
B1 1
MT2
Negative half cycle –MT2 +ve w.r.t
MT1
characteristics
of DIAC
At voltage less than the
breakover voltage- small
amount of leakage current
flows through the device-
OFF state
When voltage level reaches
breakover voltage device
starts conducting
Exhibits –ve resistance
characteristics
Unijunction Transistor(UJT)
The unijunction transistor(UJT) is a
three terminal device with
characteristics very different from
the conventional 2 junction, bipolar
transistor.
bar of N type semiconductor material